National Institute Of Materials Physics - Romania

This work is focused on the use of multilayer transparent conductive electrode (TCE) based on ZnO/Ag/ZnO in the fabrication of the organic heterostructures. The ZnO/Ag/ZnO obtained combining sputtering/thermal evaporation/sputtering techniques is featured by a good optical transmittance, a low electrical resistivity and a reduced roughness. All these characteristics recommend it as a viable alternative to indium tin oxide (ITO) for different applications. The organic materials, N,N' - diphenyl N,N' - bis (1 - aphthyl) 1,1' - biphenyl 4,4' - diamine (alpha-NPD), 5,12-Dihydro-5-12-dimethylquino [2,3-b]acridine-7,14dione (DMQA) and 4,7 diphenyl-1,10-phenanthroline (BPhen) were deposited by vacuum thermal evaporation (VTE) method, the properties of the obtained layers being investigated by FTIR, UV-VIS and PL) spectroscopy. The I-V characteristic (recorded in dark) of the organic heterostructure fabricated on the ZnO/Ag/ZriO electrode shows diode behavior, revealing its potential applications in the organic light emitting devices (OLED).

We report a study related to the influence of heat treatment (up to 300 degrees C) on the structure of GaSb \GeTe, SnSe\GeTe and GaSb\SnSe stacked phase change memory films and of their counterparts with Hf thin film barrier between the layers. Samples were prepared by pulsed laser deposition and investigated by X-ray reflectometry and X-ray diffraction in order to evaluate the inter-films diffusion and the temperature threshold where this process is initiated. The thickness and mass density variations of films after each heat treatment, as well as the efficiency of hafnium barrier film, to eliminate potential atomic diffusion issues, were investigated.

Nanostructured Cu mol. 5% doped perovskite material Ba0.75Sr0.25TiO3 was synthesized under hydrothermal conditions and further on deposited via RF sputtering technique onto commercial Al2O3 substrates provided with Au interdigital electrodes and Pt heater. The obtained thin films have been analyzed by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM), X-ray photoelectron spectroscopy (XPS), Differential Scanning Calorimetry-Thermogravimetry (DSC-TG) and electrical investigations. The H2S (5-90 ppm) gas-surface interaction at moderate operating temperature (T-op = 250 degrees C) associated with the interplay between the pre-adsorbed oxygen species and surface dipolar hydroxyl groups, has been highlighted by simultaneous work function and electrical resistance measurements. By correlation with the XPS spectra, the dominant role of surface hydroxylation was revealed and the subsequent gas sensing mechanism under operando conditions has been addressed. (C) 2018 Elsevier B.V. All rights reserved.

The influence of single-walled carbon nanotubes enriched in semiconductor (S-SWNTs) and metallic (M-SWNTs) tubes on the photoluminescence (PL) of polyaniline (PANI), electrosynthesized in the presence of the H2SO4 and HCl solutions, is reported. The emission bands peaked at 407-418 and 440-520 nm indicate that the electropolymerization of aniline (ANI) leads to the formation of short and longer macromolecular chains (MCs), respectively. We demonstrate that the reaction product consists of ANI tetramers (TT) and trimers (TR) as well as PANI-salt. Using Raman scattering and IR absorption spectroscopy, a covalent functionalization of SWNTs with shorter and longer MCs of PANI-salt is demonstrated. The presence of S-SWNTs and M-SWNTs induces a decrease in ANI TT weight in the reaction product mass consisting in S-SWNTs and M-SWNTs covalently functionalized with PANI-emeraldine salt (ES) and PANI-leucoemeraldine salt (LS), respectively. A PANI PL quenching is reported to be induced of the S-SWNTs and M-SWNTs. A de-excitation mechanism is proposed to explain PANI PL quenching.

We report for the first time on the synthesis of NiO/ZnO one-dimensional (1D) nanowire (NW) based heterostructures by applying a suitable methodology of transport and condensation. The synthesis involves, firstly the growth of NiO NWs on gold (Au) catalyzed alumina substrates using the vapor-liquid-solid (VLS) mechanism and then the formation of ZnO NWs directly on the NiO NWs using the vapor-solid (VS) mechanism. Sequential evaporation-condensation over Au-seeded alumina promotes the formation of NiO NWs, driven by the VLS growth mechanism. These NiO NWs act as backbones for the condensation of epitaxial ZnO nanostructures. The detailed morphological study of these heterostructures reveals that ZnO nanowires completely cover the whole NiO nanowires completely and growing out in the form of flat leaves from the NiO nanowire branches. The diameters of the NiO NWs have been found to vary from 15 nm to 60 nm. Selected area electron diffraction data (SAED) indicate an epitaxial growth of ZnO nanowires along (101)-planes on the strongly oriented NiO nanowires along (200) crystallographic planes. Finally, NiO NW and NiO/ZnO heterostructure based conductometric gas sensing devices have been fabricated and the comparison between their sensing performances have been compared. Interestingly, NiO/ZnO NWs heterostructure based sensing devices shows superior performance compared to NiO sensors toward volatile organic compounds (VOC). (C) 2018 Elsevier B.V. All rights reserved.

In this work, we investigate the photovoltaic response of Pt/0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(0.5BZT-0.5BCT)/ITO structures through the insertion of a semiconductor ZnO layer at different positions. The values of short-circuit photocurrent density (J(sc)) of the Pt/ZnO/0.5BZT-0.5BCT/ITO, Pt/0.5BZT-0.5BCT/ZnO/ITO and Pt/ZnO/0.5BZT-0.5BCT/ZnO/ITO capacitors are around 5.31, 0.0034 and 0.052 mA/cm(2), respectively. The enhanced photovoltaic (PV) effect is observed when ZnO layer is inserted between Pt and the 0.5BZT-0.5BCT layer. The built-in field developed at the ZnO/ferroelectric interface in the same direction of the depolarizing field, provides a favorable electric potential for the efficient separation and transportation of photo generated e-h pairs. Furthermore, the polarization-dependent interfacial coupling effect enhances PV effect, which is confirmed by investigating the role of polarization flipping on switchable photo response. This work provides an efficient pathway in tuning the PV response in ferroelectric-based solar cells.

A novel class of quaternary intermetallic alloys based on CoPt is investigated in view of their interesting magnetic properties induced by the presence of hard magnetic L1(0) phase. A Co48Pt28Ag6B18 alloy has been prepared by rapid solidification from the melt and subjected to various isothermal annealing procedures. The structure and magnetism of both as-cast and annealed samples as well as the phase evolution with temperature are investigated by means of thermal analysis, X-ray, and selected area electron diffraction, scanning and high-resolution electron microscopy, and magnetic measurements. The X-ray diffraction (XRD) analysis shows that both the as-cast alloy and the sample annealed at 400 degrees C (673 K) have a nanocrystalline structure where fcc CoPt phase predominates. Annealing at 473 degrees C promotes the formation of L1(0) phase triggered by the disorder-order phase transformation as documented in the differential scanning calorimetry results. The sample annealed at 670 degrees C (943 K) shows full formation of L1(0) CoPt as revealed by XRD. Magnetic measurements showed coercivity values ten times increased compared to the as-cast state. This confirms the full formation of L1(0) CoPt in the annealed samples. Moreover, detailed atomic resolution HREM images and SAED patterns show the occurrence of the rarely seen (003) superlattice peaks, which translated into a high ordering of the L1(0) CoPt superlattice. Such results spur more interest in finding novel classes of nanocomposite magnets based on L1(0) phase.

We have undertaken a temperature-dependent, investigation of the thermodynamics, structure, morphology and magnetism of two MnAl nanocomposite alloys (Mn60Al40 and Mn55Al45). Differential scanning calorimetry (DSC) studies allowed the determination of the exo-effects occurring in the structural phase transformation of MnAI, while by using temperature-dependent X-ray diffraction of synchrotron radiation we were able to monitor the phase transformation effects and the evolution with temperature of various structural phases occurring in the samples. We have shown that slight changes in stoichiometry (5 at.%) give rise to different phase structure in the as-cast state. While in Mn60Al40 only hcp epsilon phase can be found, in Mn55Al45 as-cast alloy, there is a quite complex phase structure with a mixture of gamma(2) (Al8Mn5) and epsilon as well as ferromagnetic MnAI T-phase. Activation energies of about 165 kJ/mol and 290 kJ/mol have been calculated from the Ozawa-Flynn-Wall analysis of DSC experimental data. These findings are in good agreement with the results obtained from XRD. For the Mn55Al45 as cast alloy, we have confirmed by temperature-dependent synchrotron XRD that the hcp e phase decomposes through the migration of interphase interfaces with the transformation rate controlled by boundary diffusion processes. High-resolution transmission electron microscopy have confirmed the phase structure obtained by XRD, while magnetic properties, obtained for the as-cast alloys are consistent with the multiphase character of the samples and in good agreement with previously reported results. The magnetization does not saturate for the maximum applied field of about 4 x 10(6) A/m and a marked coercivity of about 160 kA/m is obtained for the Mn55Al45 as-cast alloy.

The K beta x-ray spectra of the elements from Ca to Ge have been systematically investigated using a high resolution antiparallel double-crystal x-ray spectrometer. Each K beta(1,3) natural linewidth has been corrected using the instrumental function of this type of x-ray spectrometer, and the spin doublet energies have been obtained from the peak position values in K beta(1,3) x-ray spectra. For all studied elements the corrected K beta(1) x-ray lines FWHM increase linearly as a function of Z. However, for K beta(3) x-ray lines this dependence is generally not linear in the case of 3d elements but increases from Sc to Co elements. It has been found that the contributions of satellite lines are considered to be [KM] shake processes. Our theoretically predicted synthetic spectra of Ca, Mn, Cu, and Zn are in very good agreement with our high-resolution measurements, except in the case of Mn, due to the open-shell valence configuration effect (more than 7000 transitions for diagram lines and more than 100 000 transitions for satellite lines) and the influence of the complicated structure of the metallic Mn.

In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO3 (Nb:STO) substrates in a metal-ferroelectric-semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/ BCZT/ZnO interfaces. The capacitance-electric field (C-E) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the C-E and current-electric field characteristics on a MFS structure.