National Institute Of Materials Physics - Romania

Pd nanoparticles are stabilized onto the surface of Fe3O4-entrapped poly(aminoethyl acrylamide) via functionalization of polymer with a new class of NNN-pincer ligand providing a high loading and stable catalyst for aerobic oxidation of alcohols to aldehydes. Varieties of alcohols are oxidized to the corresponding aldehydes with good selectivity using 0.95 mol% Pd catalyst. The catalyst is reusable (5 runs) without loss of activity and leaching or agglomeration of Pd nanoparticles while structural regularity of the catalyst is preserved. Oxidation of benzyl alcohol is also scaled up to a few grams. (C) 2018 Elsevier B.V. All rights reserved.

Arrays of magnetic Ni-Cu alloy nanowires with different compositions were prepared by a template-replication technique using electrochemical deposition into polycarbonate nanoporous membranes. Photolithography was employed for obtaining interdigitated metallic electrode systems of Ti/Au onto SiO2/Si substrates and subsequent electron beam lithography was used for contacting single nanowires in order to investigate their galvano-magnetic properties. The results of the magnetoresistance measurements made on single Ni-Cu alloy nanowires of different compositions have been reported and discussed in detail. A direct methodology for transforming the magnetoresistance data into the corresponding magnetic hysteresis loops was proposed, opening new possibilities for an easy magnetic investigation of single magnetic nanowires in the peculiar cases of Stoner-Wohlfarth-like magnetization reversal mechanisms. The magnetic parameters of single Ni-Cu nanowires of different Ni content have been estimated and discussed by the interpretation of the as derived magnetic hysteresis loops via micromagnetic modeling. It has been theoretically proven that the proposed methodology can be applied over a large range of nanowire diameters if the measurement geometry is suitably chosen.

In this work, the ferroelectric characteristics of 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (BCZT) thin films grown on 0.7 wt. % Nb-doped (001)-SrTiO3 (Nb:STO) single-crystal have been investigated. High-resolution transmission electron microscopy and electron energy loss spectroscopy revealed a very sharp Nb:STO/BCZT interface, while selected area electron diffraction revealed the epitaxial growth of the BCZT layer on the Nb:STO substrate. The ferroelectric nature of the BCZT films have been investigated by piezoresponse force microscopy and hysteresis loops. The effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function. The local field variation was found to decrease with the increase in the electric field, and thus, the switching process becomes faster. The peak value of the polarization current and the logarithmic characteristic switching time exhibited an exponential dependence on the inverse of electric field. This model gave an excellent agreement with the experimental polarization reversal transients throughout the whole time range. Published by AIP Publishing.

The production and thermal stability of the irradiation paramagnetic point defects (IPPDs) in the as-grown, standard float-zone silicon (STFZ) and oxygen doped float-zone silicon (DOFZ) irradiated at room temperature with high fluence 3.5 MeV (1 x 10(17) cm(-2)) low energy and 27 MeV (2 x 10(16) cm(-2)) high energy electrons were investigated by Electron Spin Resonance (ESR). The nature and concentration of the IPPDs identified in the as-irradiated and isochronally annealed up to 300 degrees C samples by ESR measurements under intense above the gap 1.06 mu m in-situ laser illumination, were found to depend on oxygen concentration and electrons energy. While irradiation of STFZ with electrons produced as main IPPDs, besides divacancies, larger tetravacancy and pentavacancy cluster defects, irradiation of DOFZ resulted mainly in divacancies, vacancy-oxygen and interstitial oxygen-carbon impurity pairs. The observed variation in the nature of the main resulting IPPDs with the concentration of incorporated oxygen is explained by differences in the dominant defects production mechanisms. Thus in STFZ with lower oxygen concentration (1 x 10 16 cm(-3)) the dominant production mechanisms are the direct defects formation from a chain of neighboring vacancies by a cascade of secondary recoils across the path of the high energy irradiating particle and the divacancies diffusion and trapping/aggregation. Meanwhile, in DOFZ with larger oxygen content (1.2 x 10(17) cm(-3)) the primary vacancy and interstitial trapping by the oxygen and carbon impurities is the dominant defect production mechanism. Variations in the concentration and nature of the IPPDs observed during isochronal annealing are discussed in terms of defects thermal activated diffusion and recombination processes.

This work is focused on the use of multilayer transparent conductive electrode (TCE) based on ZnO/Ag/ZnO in the fabrication of the organic heterostructures. The ZnO/Ag/ZnO obtained combining sputtering/thermal evaporation/sputtering techniques is featured by a good optical transmittance, a low electrical resistivity and a reduced roughness. All these characteristics recommend it as a viable alternative to indium tin oxide (ITO) for different applications. The organic materials, N,N' - diphenyl N,N' - bis (1 - aphthyl) 1,1' - biphenyl 4,4' - diamine (alpha-NPD), 5,12-Dihydro-5-12-dimethylquino [2,3-b]acridine-7,14dione (DMQA) and 4,7 diphenyl-1,10-phenanthroline (BPhen) were deposited by vacuum thermal evaporation (VTE) method, the properties of the obtained layers being investigated by FTIR, UV-VIS and PL) spectroscopy. The I-V characteristic (recorded in dark) of the organic heterostructure fabricated on the ZnO/Ag/ZriO electrode shows diode behavior, revealing its potential applications in the organic light emitting devices (OLED).

We report a study related to the influence of heat treatment (up to 300 degrees C) on the structure of GaSb \GeTe, SnSe\GeTe and GaSb\SnSe stacked phase change memory films and of their counterparts with Hf thin film barrier between the layers. Samples were prepared by pulsed laser deposition and investigated by X-ray reflectometry and X-ray diffraction in order to evaluate the inter-films diffusion and the temperature threshold where this process is initiated. The thickness and mass density variations of films after each heat treatment, as well as the efficiency of hafnium barrier film, to eliminate potential atomic diffusion issues, were investigated.

Nanostructured Cu mol. 5% doped perovskite material Ba0.75Sr0.25TiO3 was synthesized under hydrothermal conditions and further on deposited via RF sputtering technique onto commercial Al2O3 substrates provided with Au interdigital electrodes and Pt heater. The obtained thin films have been analyzed by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM), X-ray photoelectron spectroscopy (XPS), Differential Scanning Calorimetry-Thermogravimetry (DSC-TG) and electrical investigations. The H2S (5-90 ppm) gas-surface interaction at moderate operating temperature (T-op = 250 degrees C) associated with the interplay between the pre-adsorbed oxygen species and surface dipolar hydroxyl groups, has been highlighted by simultaneous work function and electrical resistance measurements. By correlation with the XPS spectra, the dominant role of surface hydroxylation was revealed and the subsequent gas sensing mechanism under operando conditions has been addressed. (C) 2018 Elsevier B.V. All rights reserved.

The influence of single-walled carbon nanotubes enriched in semiconductor (S-SWNTs) and metallic (M-SWNTs) tubes on the photoluminescence (PL) of polyaniline (PANI), electrosynthesized in the presence of the H2SO4 and HCl solutions, is reported. The emission bands peaked at 407-418 and 440-520 nm indicate that the electropolymerization of aniline (ANI) leads to the formation of short and longer macromolecular chains (MCs), respectively. We demonstrate that the reaction product consists of ANI tetramers (TT) and trimers (TR) as well as PANI-salt. Using Raman scattering and IR absorption spectroscopy, a covalent functionalization of SWNTs with shorter and longer MCs of PANI-salt is demonstrated. The presence of S-SWNTs and M-SWNTs induces a decrease in ANI TT weight in the reaction product mass consisting in S-SWNTs and M-SWNTs covalently functionalized with PANI-emeraldine salt (ES) and PANI-leucoemeraldine salt (LS), respectively. A PANI PL quenching is reported to be induced of the S-SWNTs and M-SWNTs. A de-excitation mechanism is proposed to explain PANI PL quenching.

We report for the first time on the synthesis of NiO/ZnO one-dimensional (1D) nanowire (NW) based heterostructures by applying a suitable methodology of transport and condensation. The synthesis involves, firstly the growth of NiO NWs on gold (Au) catalyzed alumina substrates using the vapor-liquid-solid (VLS) mechanism and then the formation of ZnO NWs directly on the NiO NWs using the vapor-solid (VS) mechanism. Sequential evaporation-condensation over Au-seeded alumina promotes the formation of NiO NWs, driven by the VLS growth mechanism. These NiO NWs act as backbones for the condensation of epitaxial ZnO nanostructures. The detailed morphological study of these heterostructures reveals that ZnO nanowires completely cover the whole NiO nanowires completely and growing out in the form of flat leaves from the NiO nanowire branches. The diameters of the NiO NWs have been found to vary from 15 nm to 60 nm. Selected area electron diffraction data (SAED) indicate an epitaxial growth of ZnO nanowires along (101)-planes on the strongly oriented NiO nanowires along (200) crystallographic planes. Finally, NiO NW and NiO/ZnO heterostructure based conductometric gas sensing devices have been fabricated and the comparison between their sensing performances have been compared. Interestingly, NiO/ZnO NWs heterostructure based sensing devices shows superior performance compared to NiO sensors toward volatile organic compounds (VOC). (C) 2018 Elsevier B.V. All rights reserved.

In this work, we investigate the photovoltaic response of Pt/0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(0.5BZT-0.5BCT)/ITO structures through the insertion of a semiconductor ZnO layer at different positions. The values of short-circuit photocurrent density (J(sc)) of the Pt/ZnO/0.5BZT-0.5BCT/ITO, Pt/0.5BZT-0.5BCT/ZnO/ITO and Pt/ZnO/0.5BZT-0.5BCT/ZnO/ITO capacitors are around 5.31, 0.0034 and 0.052 mA/cm(2), respectively. The enhanced photovoltaic (PV) effect is observed when ZnO layer is inserted between Pt and the 0.5BZT-0.5BCT layer. The built-in field developed at the ZnO/ferroelectric interface in the same direction of the depolarizing field, provides a favorable electric potential for the efficient separation and transportation of photo generated e-h pairs. Furthermore, the polarization-dependent interfacial coupling effect enhances PV effect, which is confirmed by investigating the role of polarization flipping on switchable photo response. This work provides an efficient pathway in tuning the PV response in ferroelectric-based solar cells.