National Institute Of Materials Physics - Romania

Foraminifera, unicellular organisms that are widespread throughout marine ecosystems, build Ca-carbonate shells that may incorporate trace metals present in the ocean waters because of natural or anthropogenic supply. In this study, we focussed on the trace element Zn, which is abundant in both contaminated and clean waters. We used X-ray and electron spectromicroscopy to investigate the Zn coordinative environment in individual shells of two species of benthic foraminifera, Elphidium aculeatum and Quinqueloculina seminula, that were sampled from a heavy-metal polluted area of Sardinia, Italy. These species synthesise the Ca-carbonate in extracellular and intracellular spaces, respectively, which implies some diversity in their physiologies and cation transport processes, and they can adapt and survive in metal-polluted environments. Our analyses of X-ray micro-fluorescence (mu-XRF) maps and Zn-K mu-X-ray absorption near-edge spectroscopy (XANES) reveal that although 50% of Zn occurs as a Ca substitute in calcite or as a tetracoordinate oxygen-adsorbed ion, detectable amounts can also be found in other Zn-independent mineral phases, particularly hydrozincite, whose formation is due to foraminiferal cellular processes. Other Zn phases, sphalerite (attributed to early diagenetic process) and Zn-phosphate, were recognised. Moreover, we found distinct differences in the Zn concentration, distribution and chemical speciation at the micro- and nano-metric scales of the investigated E. aculeatum and Q. seminula species. In the calcite needles of Q. seminula, Zn is uniformly distributed and recognised in a disordered local environment, which suggests that it is incorporated in the calcite phase during the intracellular calcification process. These findings offer insight into Zn incorporation in foraminifera and its potential application in biomonitoring and environmental studies.

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 degrees C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide. (C) 2017 Published by Elsevier B.V.

We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)(3). The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using direct-current magnetron sputtering technique. A transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 degrees C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.

GeSi NCs / TiO2 multilayers with enhanced photocurrent properties were prepared and studied. Multilayers of TiO2 /(GeSi/TiO2)x2 /Si-p were deposited by magnetron sputtering and annealed by RTA at 700 degrees C for GeSi NCs formation. A post-annealing hydrogenation in plasma was performed on multilayers for healing of defects acting as traps and/or recombination centers and consequently producing the photocurrent enhancement. We studied the electrical and photoconductive properties of multilayers annealed by RTA and post-annealing hydrogenated. The current - temperature dependence reveals the conduction mechanisms in GeSi NCs / TiO2 multilayers RTA annealed, i.e. thermal activation of carriers to extended states (0.31 eV activation energy), the electron tunneling mechanism to nearest neighbors (T-1/2 behavior) and Mott variable range hopping (T-1/4 dependence). The photocurrent spectra made on multilayers structures hydrogenated for 10, 20 and 30 min evidence the photocurrent increasing up to 50%, showing that the hydrogenation is a suitable treatment for enhancing photocurrent. All photocurrent spectra present a dominant maximum (920 nm) and two shoulders (similar to 770 and similar to 1060 nm).

Low carbon Fe-C steel surface has been studied before and after electrolytic galvanization. The corrosion products formed under atmospheric conditions on the Fe-C steel were identified and characterised by X-ray diffraction (XRD), transmission Mossbauer spectroscopy, conversion electron Mossbauer spectroscopy (CEMS), and conversion X-ray Mossbauer spectroscopy (CXMS). In decreasing order of abundance the found corrosion phases were magnetite, hematite, and goethite. After the surface preparation, an electrolytic galvanization process was applied. A magnetic anisotropy was evidenced after preparation, in the superficial layer of around 250 nm thickness. Scanning electron microscopy (SEM) analyses evidenced the formation of a uniform thin Zn film of 8 mu m at the surface of steel. No other Fe-Zn phases were identified at the steel-Zn interface.

GeSi NCs / TiO2 multilayers with enhanced photocurrent properties were prepared and studied. Multilayers of TiO2 /(GeSi/TiO2)x2 /Si-p were deposited by magnetron sputtering and annealed by RTA at 700 degrees C for GeSi NCs formation. A post-annealing hydrogenation in plasma was performed on multilayers for healing of defects acting as traps and/or recombination centers and consequently producing the photocurrent enhancement. We studied the electrical and photoconductive properties of multilayers annealed by RTA and post-annealing hydrogenated. The current - temperature dependence reveals the conduction mechanisms in GeSi NCs / TiO2 multilayers RTA annealed, i.e. thermal activation of carriers to extended states (0.31 eV activation energy), the electron tunneling mechanism to nearest neighbors (T-1/2 behavior) and Mott variable range hopping (T-1/4 dependence). The photocurrent spectra made on multilayers structures hydrogenated for 10, 20 and 30 min evidence the photocurrent increasing up to 50%, showing that the hydrogenation is a suitable treatment for enhancing photocurrent. All photocurrent spectra present a dominant maximum (920 nm) and two shoulders (similar to 770 and similar to 1060 nm).

The films of SiGe nanocrystals in SiO2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.

Local atomic configuration, phase composition and atomic intermixing in Fe-rich Fe1-xCrx and Fe1-xMox ribbons (x = 0.05, 0.10, 0.15), of potential interest for high-temperature applications and nuclear devices, are investigated in this study in relation to specific processing and annealing routes. The Fe-based thin ribbons have been prepared by induction melting, followed by melt spinning and further annealed in He at temperatures up to 1250 degrees C. The complex structural, compositional and atomic configuration characterisation has been performed by means of X-ray diffraction (XRD), transmission Mossbauer spectroscopy and differential scanning calorimetry (TG-DSC). The XRD analysis indicates the formation of the desired solid solutions with body-centred cubic (bcc) structure in the as-quenched state. The Mossbauer spectroscopy results have been analysed in terms of the two-shell model. The distribution of Cr/Mo atoms in the first two coordination spheres is not homogeneous, especially after annealing, as supported by the short-range order parameters. In addition, high-temperature annealing treatments give rise to oxidation of Fe (to haematite, maghemite and magnetite) at the surface of the ribbons. Fe1-xCrx alloys are structurally more stable than the Mo counterpart under annealing at 700 degrees C. Annealing at 1250 degrees C in He enhances drastically the Cr clustering around Fe nuclei.

Because of the unique properties of the ferroelectric perovskite particles with a well-defined anisotropic form like shape-and size dependent at low dimensions they have all the attention of the scientific world. Extensive morphostructural techniques will be used to characterize the piezoelectric material.

The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.