National Institute Of Materials Physics - Romania

The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO2/Ge-HfO2/HfO2 and post-growth rapid thermal annealing for nanocrystals formation at 600 degrees C. The illumination of the structure was performed through a semi-transparent Au contact (20% transparency). A maximum value of the light- induced change of 90% in C-V curve was obtained for 5 mW/cm(2) illumination during +5 V writing programming. The effect of the light exposure on the relative change of the C-V curve can be increased by reducing the writing time at 1 min.

The electrical and photosensing properties correlated with structure and morphology of TiO2/(GeSi/TiO2)(2) multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The photosensing properties are studied by measuring photocurrent spectra at different temperatures. We obtain multilayers with 10 - 15 nm Ge0.6Si0.4 nanocrystals (NCs) by annealing at 800 degrees C. We evidence the tunneling mechanism between neighbor NCs (T-1/2 law) in the dark current-temperature dependence. The photocurrent spectrum has a maximum with position shifting from 940 to 980 nm when the measurement temperature increases from 150 to 300 K, being due to the GeSi NCs.

The specific morphology and magnetic properties of magnetite-based glass-ceramics obtained by crystallization of Fe-containing borosilicate glassmelts in the presence of P2O5 as nucleating agent are investigated. We found that the distribution of the tiny nanoparticles of magnetite determines the low temperature response to magnetic field. The observed effects are discussed with respect to the following factors: (1) the existence of a multimodal size distribution of the tiny grains as revealed by Mossbauer spectroscopy, magnetometry, and high-resolution electron microscopy; (2) the existence of a disordered layer at the grain surface which is driven by field in a magnetically ordered state; and (3) the interplay between the relaxation mechanisms in different temperature ranges.

Single ZnO nanowires prepared by wet and dry methods are used as channels in high performance back-gated field effect transistors working in low power operation mode, with on-off ratios up to 10(5) and mobilities up to 167 cm(2) V-1 s(-1). The nanowires' properties, generated by the growth techniques, influence the parameters of the transistors, therefore a throughout comparison is made.

Thermal behavior of repa-germanium (C6H10Ge2O7, Ge-132) during heating in air or in argon is investigated using DSC-TGA, XRD, SEM,TEM, and FT-IR measurements. Nine domains of thermal transformations were identified from room temperature to 1200 degrees C, in air or argon. The first reversible transformation is below 220 degrees C and it was assigned to an isomerization process, based on DSC, XRD and IR measurements. The next five transformation domains (220-910 degrees C) are decompositions accompanied by weight loss. The main product of thermal decomposition is Ge. The next transformation domain (910-970 degrees C) corresponds to melting of Ge, both in argon and air. In the air, this step is followed by oxidation of Ge (970-1100 degrees C) and, finally, by melting of GeO2. Amorphous phases formed between 220 and 720 degrees C. Observed processes are discussed based on crystal chemistry and bonds dynamics considerations. (C) 2016 Elsevier B.V. All rights reserved.

Vapor transport growth of atomically thin MoS2 layers on patterned substrates is investigated, as it is a step towards the self-aligned growth and formation of heterojunctions, which could be useful in future applications. Enhanced formation of MoS2 flakes at the pattern edges is observed on both the substrates examined, namely, patterned thermal SiO2 on Si(100) and graphene flakes on SiO2. The diffusion driven growth leads to the formation of MoS2 monolayers (MLs) with sizes of tens of micrometers around the edges of SiO2 patterns. The growth mode and the optical quality of the MoS2 flakes can be controlled by varying the substrate temperature. Besides the lateral growth, 3R-type pyramids are obtained on prolonging the growth. Lateral MoS2-graphene heterostructures are obtained by using graphene flakes on SiO2 as a substrate.

The development of innovative technologies to modify natural textiles holds an important impact for medical applications, including the prevention of contamination with microorganisms, particularly in the hospital environment. In our study, Fe and N co-doped TiO2 nanoparticles have been obtained via the hydrothermal route, at moderate temperature, followed by short thermal annealing at 400 degrees C. These particles were used to impregnate polyester (PES) materials which have been evaluated for their morphology, photocatalytic performance, antimicrobial activity against bacterial reference strains, and in vitro biocompatibility on human skin fibroblasts. Microscopic examination and quantitative assays have been used to evaluate the cellular morphology and viability, cell membrane integrity, and inflammatory response. All treated PES materials specifically inhibited the growth of Gram-negative bacilli strains after 15 min of contact, being particularly active against Pseudomonas aeruginosa. PES fabrics treated with photocatalysts did not affect cell membrane integrity nor induce inflammatory processes, proving good biocompatibility. These results demonstrate that the treatment of PES materials with TiO2-1% Fe-N particles could provide novel biocompatible fabrics with short term protection against microbial colonization, demonstrating their potential for the development of innovative textiles that could be used in biomedical applications for preventing patients' accidental contamination with microorganisms from the hospital environment.

Disordered Sm3+ doped Y3ScxAl5-xO12 (Sm:YS(x)AG) polycrystalline ceramics with compositional parameter x = (0.05, 0.5, 1, 2) and different Sm3+ ions concentrations were obtained by solid state reaction method. XRD investigations show the linear increase of the lattice constant with compositional parameters x. New spectroscopic data obtained from high resolution optical absorption and emission spectra of Sm3+ doped YS(x)AG ceramics reveal composition effects on Sm3+ optical spectra: modification of the shapes and shifts of the lines, presence of the additional satellites and unresolved multicenter structure, etc. The analysis of these data allowed us to establish a partial structure of Sm3+ energy levels in Sm:YS(x)AG (x = 2) ceramics. The emission kinetics of the (4)G(5/2) level for different Sm3+ concentrations and Sc content in Sm:YS(x)AG were measured and analyzed. (C) 2016 Elsevier B.V. All rights reserved.

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 degrees C. Using this approach, effects related to Ge-Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW(-1)), fast response time (0.5 mu s at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

High density bulks (97%-99%) of MgB2 were prepared by spark plasma sintering (SPS) in nitrogen (N-2) atmosphere for different heating rates (10, 20 and 100 degrees C min(-1)) and compared with reference samples processed in vacuum and Ar. N-2 reacts with MgB2 and forms MgB9N along the MgB2 grain boundaries. The high-field critical current density is enhanced for the sample processed in N-2 with a heating rate of 100 degrees C min(-1). At 2-35 K, this sample shows the strongest contribution of the grain boundary pinning (GBP). All samples are in the point pinning (PP) limit and by increasing temperature the GBP contribution decreases.