National Institute Of Materials Physics - Romania

A comparative study of morpho-structural, magnetic and magneto-transport properties of two Fe-Au granular films with different concentrations of Fe nanoclusters of almost similar size is reported. Different organizations of the Fe clusters, i.e. in lamellar-like or random-like configuration, were obtained by varying the amount of Fe in the Fe-Au films. The specific magnetic behaviour was investigated with respect to local structure and morpho-structural aspects by combining magneto-optic Kerr effect and superconducting quantum interference device magnetometry, Fe-57 conversion electron Mossbauer spectroscopy and a wide range of electron microscopy techniques. A strong in-plane magnetic texture with uniaxial anisotropy was observed in the case of the lamellar-like organization of the clusters (specific to the Fe-Au film with higher Fe concentration) whereas a superparamagnetic behaviour was evidenced in the case of random distribution of the clusters (specific to the Fe-Au film with lower Fe concentration), despite the similar average size of the clusters in the two samples. Specific magnetoresistance effects were investigated with respect to both the involved magnetic configurations and magnetic interactions of the Fe clusters.

Development of new sensitive materials by different synthesis routes in order to emphasize the sensing properties for hazardous H2S detection is one of a nowadays challenge in the field of gas sensors. In this study we obtained mesoporous SnO2-CuWO4 with selective sensitivity to H2S by an inexpensive synthesis route with low environmental pollution level, using tripropylamine (TPA) as template and polyvinylpyrrolidone (PVP) as dispersant/stabilizer. In order to bring insights about the intrinsic properties, the powders were characterized by means of a variety of complementary techniques such as: X-Ray Diffraction, XRD; Transmission Electron Microscopy, TEM; High Resolution TEM, HRTEM; Raman Spectroscopy, RS; Porosity Analysis by N-2 adsorption/desorption, BET; Scanning Electron Microscopy, SEM and X-ray Photoelectron Spectroscopy, XPS. The sensors were fabricated by powders deposition via screen printing technique onto planar commercial Al2O3 substrates. The sensor signals towards H2S exposure at low operating temperature (100 degrees C) reaches values from 10(5) (for SnWCu600) to 10(6) (for SnWCu800) over the full range of concentrations (5-30 ppm). The recovery processes were induced by a short temperature trigger of 500 degrees C. The selective sensitivity was underlined with respect to the H2S, relative to other potential pollutants and relative humidity (10-70% RH). (C) 2017 Elsevier B.V. All rights reserved.

Compatibility of screen-printed piezoelectric 0.65Pb(Mg1/3Nb2/3) O-3-0.35PbTiO(3) thick films with metalized low-temperature co-fired (LTCC) ceramic substrates is examined. Such substrates are interesting for micro-electro mechanical systems, for example for piezoelectric sensors and actuators, where functional layers are usually Pb-based piezoelectrics. In this study the special attention is given to the influence of the Au, Ag and Ag/Pd electrode materials coated over the LTCC on the functional properties of the films. The best phase purity, dielectric and piezoelectric properties were obtained in the films on gilded substrates. No secondary phases were observed at the film/Au interface by scanning electron microscope. The piezoelectric coefficient d(33) of the films on gilded substrates is equal to 120 pC/N.

Hierarchical flowers-like zinc oxide structures have been successfully obtained by a simple and fast ultrasound-assisted method performed in a ordinary ultrasonic bath using an ammonia solution and zinc acetate, in the absence of any surfactant or template. The composition, structure, crystallinity, morphology and optical properties of the materials obtained at different ultrasound irradiation times were characterized by infrared, UV-Vis and photoluminescence spectroscopy, X-ray diffraction, scanning and transmission electron microscopy investigations. It was proved that the ultrasound irradiation time manipulates both the defect content (implicit the photoluminescent properties) and morphology of the ZnO materials: shorter irradiation times leads to the synthesis of high-defected ZnO structures of flower morphology with triangular-shaped petals, while higher irradiation times favours the formation of low-defected ZnO structures with tipped rod-like petals. A plausible growth mechanism of the architectures that implies aggregation via oriented attachment followed by an Ostwald ripening is advanced based on these results. The ZnO flower-like structures present high photocatalytic activities, a total phenol mineralization being registered in the case of visible light experiments. Electron-spin resonance measurements demonstrate the generation of reactive oxygen species, namely hydroxyl radicals but also C centred radicals adducts derived most probable from the residual acetate adsorbed on ZnO surface. (C) 2016 Elsevier B.V. All rights reserved.

Reduced-activation steels such as Eurofer alloys are candidates for supporting plasma facing components into kamak-like nuclear fusion reactors. In order to investigate the impact of hydrogen/deuterium insertion in their crystalline lattice, annealing treatments in hydrogen atmosphere have been applied on Eurofer slabs. The resulting samples have been analyzed with respect to local structure and atomic configuration both before and after successive annealing treatments, by X-ray diffractometry (XRD), scanning electron microscopy and energy dispersive spectroscopy (SEM-EDS), X-ray photoelectron spectroscopy (XPS) and conversion electron Mossbauer spectroscopy (CEMS). The corroborated data point out for a bcc type structure of the non-hydrogenated alloy, with an average alloy composition approaching Fe0.9Cr0.1 along a depth of about 100 nm. EDS elemental maps do not indicate surface inhomogeneities in concentration whereas the Mossbauer spectra prove significant deviations from a homogeneous alloying. The hydrogenation increases the expulsion of the Cr atoms toward the surface layer and decreases their oxidation, with considerable influence on the surface properties of the steel. The hydrogenation treatment is therefore proposed as a potential alternative for a convenient engineering of the surface of different Fe-Cr based alloys.(C) 2017 Elsevier B.V. All rights reserved.

High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO2/floating gate of single layer of Ge QDs in HfO2/tunnel HfO2/p-Si wafers. Both Ge and HfO2 are nanostructured by RTA at moderate temperatures of 600-700 degrees C. By nanostructuring at 600 degrees C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 x 1015 m(-2) is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO2 NCs boundaries, while another part of the Ge atoms is present inside the HfO2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8. +/-. 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO2, distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

TiO2 nanoparticles, undoped and doped with Fe, have been prepared by laser pyrolysis and further investigated with respect to morphological, structural and magnetic aspects by transmission electron microscopy, diffractometry, Mossbauer spectroscopy, and magnetometry. The obtained nanoparticles, consisting of mainly anatase phase, agglomerate in clusters of tenths of units and present a large size distribution in the range from 5 to 40 nm. The anatase to rutile weight ratio (about 9) and the morphology of particles is similar in all analyzed samples (doped by up to 12 0,0 at. % Fe). Only Fe3+ ions in high spin-configuration were observed mainly at the, surface of TiO2 nanoparticles, either distributed or forming fine clusters of Fe oxide.;:Both a paramagnetic phase and a superparamagnetic one with blocking temperature lower than 50 K are superposed over a long-range ferromagnetic phase specific to diluted magnetic oxide systems. The influence of doping Fe ions on the magnetic behavior of each phase is discussed in detail. Evidences for interface exchange couplings (with unidirectional anisotropy in specific conditions) between the long-range ferromagnetic phase and the fine clusters (antiferromagnetic in nature), which become frozen below temperature of 50, K, are provided. The specificity of the processing route and the physical mechanisms responsible observed relevant magnetic features, which can be tailored for suitable applications, are discussed.

Amorphous hematite synthesized by a simple and fast microwave route was used to obtain Fe16N2 fine particles by reducing in 5% H-2/Ar gas flow, followed by long time nitridation in ammonia gas flow at temperatures below 200 degrees C. Depending on nitridation temperature, various amounts of metallic iron were present along with the alpha" -Fe16N2 main phase. A small amount of iron oxide was observed by Mossbauer spectroscopy, but it was undetected by X-ray diffraction due to its high degree of amorphization. Increased amounts of Fe3N and Fe4N phases were observed at a nitridation temperature above 150 degrees C, which had a detrimental effect on the magnetic properties. Structural information and phase composition were extracted from Rietveld refinement of the XRD data. Values of the magnetization at saturation measured at 40 kOe and 25 degrees C of 222 emu/g for alpha"-Fe16N2 and 192 emu/g for metallic iron were obtained via magnetic measurements, Rietveld, and Mossbauer analysis.

The localization and distribution of the Mn2+ ions in two sol-gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn2+ ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn2+ sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn2+ in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn2+ ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 degrees C induced changes in the Mn2+ ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample. (C) 2016 Elsevier B.V. All rights reserved.

Group IV photonics is on its way to be integrated with electronic circuits, making information transfer and processing faster and more energy efficient. Light sources, a critical component of photonic integrated circuits, are still in development. Here, we compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells and Si0.1Ge0.8Sn0.1 barriers to a reference Ge0.915Sn0.085 homo-junction LED. Material properties as well as band structure calculations are discussed, followed by optical investigations. Electroluminescence spectra acquired at various temperatures indicate effective carrier confinement for electrons and holes in the GeSn quantum wells and confirm the excellent performance of GeSn/SiGeSn MQW light emitters. (C) 2017 Optical Society of America