National Institute Of Materials Physics - Romania

In this paper, we apply results of analysis of the Raman spectrum from an amorphous carbon film modified with iron (a - C : Fe) which leads to construction of clusters containing fragments of graphene and a layer of iron atoms. Such clusters may be candidates for the role of microwave radiation absorbers. For the Raman experiments we performed deposition of a thin film of a -C : Fe. Details of the film deposition process, together with the corresponding Raman experiments are presented in this paper. Comparison with a literature model was performed for the intensity ratio of the maxima for specific Raman bands, using the letter D to represent " disorder" and the letter G to represent "graphite". Comparison gives evidence for the existence of nanosize fragments of graphene embedded in an amorphous matrix of the a - C : Fe film. The diameter of the fragments is predicted to attain a value of about 1.2 nm. Moreover, in a comparison with experimental data for defective graphite, the position of the maximum of the D band for a- C : Fe appeared to be red shifted. This could support the proposition that damping of Raman-active oscillations occurs by an electron gas in fragments of graphene after introduction of iron, e. g. after intercalation. On the basis of these estimates, we modeled a symmetrical polycyclic aromatic hydrocarbon having a similar size and converted it into fragment of a graphene plane by removal of hydrogen atoms occupying the edge states. To preserve symmetry, we placed atoms of iron on top of the fragment, situating them exactly above the centers of hexagons at a certain distance and placed another fragment of graphene on the top of the iron atoms, symmetrically. For a distance of 2.52 angstrom between the centers of the hexagon and the iron atom, distortions of carbon-carbon valence bonds and angles were found to be minimal, as shown through optimization of the system's geometry using the Avogadro molecular editor. This result supports an hypothesis of graphene fragments during the growth of an amorphous carbon film modified by simultaneous addition of a dopant metal such as iron. This example may illustrate the stability of a two-dimensional electron gas confined between the fragments.

Nano-composite magnets with L1(0) structure derived from binary FePt alloys and prepared as melt-spun ribbons are of current interest due to their higher operating temperature and the ability to be cast as a two-phase magnet with exchange spring magnetic properties, as both soft and hard magnetic phase may emerge from the same metastable precursor, i.e. the disordered cubic A1 phase. The present paper studies the effect of Mn addition on the thermal stability and phase structure, on the abundance of the hard magnetic phase and relative proportion of the soft ones, on the microstructure of the alloy as a function of temperature and on the overall magnetic properties. The interplay of the various magnetic sublattices in the ordering of the L1(0) phases as a consequence of introducing antiferromagnetically coupled Mn atoms in the alloy composition is discussed and interpreted in terms of microstructural changes induced by this addition as revealed by high resolution transmission electron microscopy and Xray diffraction. The temperature evolution of the phase composition and structural parameters is monitored using synchrotron radiation powder diffraction, while the compositional aspects are investigated using proton-induced X-ray emission and energy dispersive X-ray spectroscopy. Magnetic measurements reveal the magnetic parameters of interest (coercivity, remanence, Curie temperature, saturation magnetization), as well as the exchange-coupled two-phase nature of these magnets and provide information that hints at possible spin reorientation transitions in the Mn-containing planes of the L1(0) superlattice. (C) 2015 Elsevier Ltd. All rights reserved.

Dense samples (relative density > 93%) of bulk MgB2 with GeO2 additions were obtained by Spark Plasma Sintering. The critical current density J(c) of the added samples is improved at high magnetic fields when compared to the pristine sample. The optimum composition is for MgB2(GeO2)(0.005). For this sample, a J(c)(20 K) = 10(2) A/cm(2) is obtained at 5.1 T versus 3.9 T for the pristine sample. Ge substitution in the crystal lattice of MgB2 can be considered negligible, and T-c,T-onset and T-c,T-midpoint from magnetization measurements scatter within 0.2 and 0.6 K, respectively. TEM investigations show some specific details at nano scale: the tendency to form secondary phases (25-100 nm) with sphere-like or irregular shapes is observed and discussed. Samples are composites and the residual strain of MgB2 is constant for pristine and GeO2-added samples. Therefore, pinning enhancement leading to improvement of Jc for the GeO2 added samples is purely a 'microstructure' effect due to the presence of secondary phases. The point pinning is determined to be the predominant mechanism. Addition of a higher amount of GeO2 is shifting the pinning mechanism toward a grain boundary pinning. (C) 2015 Elsevier Masson SAS. All rights reserved.

The present study reveals the synthesis of metallic particles at atmospheric pressure using a radiofrequency low-temperature argon plasma jet. Copper bulk material of the powered electrode acted as solid precursor in the process and the metallic particles were obtained directly in gaseous environment. The particles were collected onto Si (100)-oriented substrates downstream of the atmospheric plasma jet and were ex situ characterized via optical microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. We obtained copper particles, reddish brown in color, either of nano-or micro-metric sizes. Additionally, the plasma species and gas temperature were determined by OES. In conclusion, it was demonstrated that conversion of bulk metals into particles is possible at atmospheric pressure using a radiofrequency plasma jet and the development of several applications is recommended.

The recent observation of a fundamental direct bandgap for GeSn group W alloys and the demonstration of low temperature lasing provide new perspectives on the fabrication of Si photonic circuits. This work addresses the progress in GeSn alloy epitaxy aiming at room temperature GeSn lasing. Chemical vapor deposition of direct bandgap GeSn alloys with a high Gamma- to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed. Up to 1 mu m thick GeSn layers with Sn contents up to 14 at. % were grown on thick relaxed Ge buffers, using Ge2H6 and SnCl4 precursors. Strong strain relaxation (up to 81%) at 12.5 at. % Sn concentration, translating into an increased separation between Gamma- and L-valleys of about 60 meV, have been obtained without crystalline structure degradation, as revealed by Rutherford backscattering spectroscopy/ion channeling and transmission electron microscopy. Room temperature reflectance and photoluminescence measurements were performed to probe the optical properties of these alloys. The emission/absorption limit of GeSn alloys can be extended up to 3.5 mu m (0.35 eV), making those alloys ideal candidates for optoelectronics in the mid-infrared region. Theoretical net gain calculations indicate that large room temperature laser gains should be reachable even without additional doping.

We present the synthesis of tungsten nanoparticles using a gas aggregation cluster source based on a magnetron sputtering discharge. The nanoparticles have sizes between 70 and 100 nm and a dendritic morphology, with branches emerging from the center and evolving in a flower-like pattern. Structural investigations revealed the presence of alpha-W and residual beta-W crystalline phases. Post deposition oxidation of the nanoparticles is also investigated.

High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited. (c) 2015 AIP Publishing LLC.

Ferroelectric/electric properties of PbZr0.52Ti0.48O3 (PZT) thin films grown by pulsed laser deposition (PLD) on two different substrates, Si (001) and SrTiO3 (STO) (001), were comparatively analyzed. The structural characterization has revealed the epitaxial relationship between the grown layers and the two types of substrates, with larger density of structural defects for the films deposited on Si (001) with buffer STO layer. The ferroelectric/electric properties are also different, with lower remnant polarization (about half of the value obtained on STO substrate), higher dielectric constant (about two times larger), and lower leakage current (about two orders of magnitude lower) for the PZT films deposited on Si (001) compared to those deposited on (001) STO substrates. Nevertheless, the results show that the use of a STO buffer layer on Si can be a solution to obtain good quality PZT capacitor structures without using expensive single-crystal oxide substrates. In this way, applications based on PZT capacitors (e.g. non-volatile memories, pyroelectric detectors, light switches, etc.) would be more easily integrated directly on Si wafers.

Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 degrees C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

The role of iron doping on magnetic properties of hydrothermal anatase TiO2:Fe-57 (0-1 at. %) nanoparticles is investigated by combining superconducting quantum interference device magnetometry with Mossbauer and electron paramagnetic resonance techniques. The results on both as-prepared and thermally treated samples in reduced air atmosphere reveal complexity of magnetic interactions, in connection to certain iron ion electron configurations and defects (oxygen vacancies, F-center, and Ti3+ ions). The distribution of iron ions is predominantly at nanoparticle surface layers. Formation of weak ferromagnetic domains up to 380 K is mainly related to defects, supporting the bound magnetic polaron model. (C) 2015 AIP Publishing LLC.