National Institute Of Materials Physics - Romania

BaxSr1-xFe12O19 (x=0.05, 0.15, 0.25, 0.35) ferrites were prepared by both the sol gel and conventional solid state reaction techniques. The structural characteristics and dielectric properties of these ferrites were investigated and compared. BaxSr1-xFe12O19 ceramics obtained by the sol gel method show homogeneous morphology and single crystalline phase while those prepared by solid state reaction route exhibit less homogeneous morphology, being accompanied by a secondary crystalline phase (BaFe2O4). The size of the grains varies in the range 200-300 nm for x=0.05-0.35 when the powders are prepared by sol gel method and, 600-700 nm for the powders prepared by solid state reaction. For the same value of x, the BaxSr1-xFe12O19 ferrites obtained via sol-gel display higher permittivity and lower dielectric losses compared to those prepared by solid state reaction route. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

In this contribution the design and fabrication of ceramic microsystems with integrated different microfluidic elements and sensors will be presented. Ceramic microsystems are based on unconventional application of low-temperature co-fired ceramic technology and materials. This unconventional application is related to three-dimensional ceramic structures, such as cantilevers, ledges, bridges, diaphragms, valleys, channels, holes and cavities, valves, mixers, diffusors, distributors, collectors, flow limiters, sensors, and actuators.

This paper presents some investigations of the effect of nanopatterning on the properties of aluminum layer deposited by sputtering. UV-Nanoimprint Lithography technique has been used for the realization of a 2D array of nanostructures (pillars) in aluminum film characterized by cylindrical shape and the following structural parameters: diameter between 400 nm and 490 nm, depth between 320 nm and 420 nm and periodicity of 1.1 mu m, which have been revealed by SEM and AFM measurements. The UV-Vis transmission, reflection and photoluminescence measurements have evidenced the effect of the nanopatterning on the optical properties of the A1 layer.

Fe16N2 fine particles were prepared by reduction in 5% H-2/Ar gas mixture flow, starting from goethite or hematite precursors, followed by nitridation in ammonia gas flow. Small amounts of metallic iron and iron oxide are present besides the main phase which is an ordered iron nitride having martensite structure (alpha''-Fe16N2) as revealed by Mossbauer spectroscopy measurements. However, X-ray diffraction data do not show any traces of oxides due to their high degree of amorphization. When nitridation is performed at about 150 C-0, Fe4N phase begins to form and its presence deteriorates the magnetic properties. The samples prepared by nitridation of goethite present better magnetic properties compared to those obtained by nitridation of hematite. Magnetic and Mossbauer measurements performed at ambient temperature were corroborated in order to extract the magnetization at saturation value for each phase which occurs in the obtained samples. The corresponding values are 226 emu/g for Fe16N2 and 198 emu/g for metallic iron contained in the prepared powders.

This chapter gives an overview of the new micro- and nano-technologies designed to monitor SC differentiation in the context of their potential applications in disease modeling, tissue engineering, regenerative medicine, as well as drug screening and toxicology. Representative examples of such applications are presented and the crucial importance of the differentiation processes for the safety of SC therapies is discussed. The roles of the main factors that influence SC differentiation are briefly summarized and the vital need to control and monitor the differentiation process using non-invasive methods is emphasized. The basic principles of new micro- and nano-technologies for monitoring SC differentiation are presented, with special focus on the use of acoustic vibrational fields to characterize SC. Literature studies on SC differentiation, involving methods based on Impedance Sensing (IS), Surface Enhanced Raman Spectroscopy ( SERS), Fourier Transformed Infrared (FTIR) spectroscopy, Microelectrode Array (MEA) sensors, Light-addressable Potentiometric Sensors (LAPS), Field-effect Transistors ( FET), Surface Plasmon Resonance (SPR) and Quartz Crystal Microbalance (QCM), are briefly described.

Epitaxial La0.67Ba0.33Ti0.02Mn0.98O3 (denoted as LBTMO hereafter) thin films of approximately 95 nm thickness were deposited by a pulsed laser deposition technique onto SrTiO3 (STO) (001) substrates. High-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) investigations revealed that the films are epilayers with a four-fold symmetry around the [001] direction. Cross-sectional TEM and the presence of Pendellosung fringes in the XRD profiles demonstrate smooth interfaces. The STO substrate induces an in-plane compressive strain, which leads to a slight tetragonality of the film structure. The epilayers exhibit paramagnetic-to-ferromagnetic phase transitions at the Curie temperature T-C (286 K), close to room temperature. The magnetization easy axis lies in the film plane along the [100] direction of the (001) substrate. The magnetic entropy change (Delta S-M) associated with the second-order magnetic phase transition was determined via magnetization measurements in the temperature range between 210 and 350 K under different magnetic fields. The relative cooling power (RCP) of this film is about 220 J kg(-1), somewhat lower than that of bulk Gd (410 J kg(-1)) for a 50 kOe field change, making the LBTMO ferromagnetic thin films a promising candidate for micro/nanomagnetic refrigeration around room temperature. The proposed universal curve provides a simple method for extrapolating Delta S-M in a wide range of fields and temperatures, thus confirming the order of the magnetic transition in this system. The magnetic entropy (Delta S-M)(max) around T-C is proportional to (mu H-0/T-C)(2/3) in agreement with the mean-field theory, indicating the existence of long-range ferromagnetic interactions in epitaxial LBTMO thin films.

In this work, the charge storage properties of trilayers with Ge nanocrystals (NCs) embedded in HfO2 matrix prepared by using two approaches for obtaining the intermediate layer with Ge NCs as nodes are investigated. Trilayer structures with tunnel and control oxides of HfO2, but with different intermediate layers of Ge and Ge-HfO2, respectively, were deposited by magnetron sputtering. Ge nanostructuring was achieved by subsequent rapid thermal annealing. Charge storage behaviour was studied by measurements of capacitance-voltage characteristics on MOS-like capacitors based on the annealed trilayers. The MOS samples with intermediate layer obtained by depositing a continuous Ge layer show hysteresis with memory windows up to similar to 1.3 V, while the ones with co-deposited Ge and HfO2 as intermediate layer present higher memory windows, similar to 1.8 V. In both cases, the memory windows are independent on the frequency demonstrating that the memory effect is due to storing the charge only inside Ge NCs. These show that the approach based on co-deposition of a Ge-HfO2 intermediate layer is more effective for charge storage with direct application in memory devices.

One of the simplest routes to prepare polycrystalline Zn(OH)(2) is by coprecipitation, with zinc nitrate as a cation source. However, the addition of even minute amounts of manganese nitrate to the precursors used to prepare pure Zn(OH)(2) results in Mn2+ doped nanostructured ZnO. The comparison with other Mn2+ doped metal hydroxides prepared by the same coprecipitation method, involving metal nitrates precursors, shows that this behavior is unique, pertaining only to Zn(OH)(2). A systematic study of the samples prepared without and with variable amounts of Mn2+ ions, in the 1 to 5000 ppm nominal concentrations range showed that the re-routing of the reaction takes place even for the lowest nominal dopant concentration of 1 ppm. According to X-ray diffraction, transmission electron microscopy and Fourier transform infrared spectroscopy investigations, both crystallite size and morphology of the resulting nanostructured ZnO samples varied with the Mn2+ nominal concentration. Moreover, quantitative electron paramagnetic resonance investigations showed that the incorporation rate of the Mn2+ ions at different sites in the nanostructured ZnO depended on the nominal Mn2+ concentration. The results are discussed in terms of the coordination properties of the Mn2+ and Zn2+ ions and the nature of the reaction precursors.

The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the efficient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations confirm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 mu m). We have, however, identified some limitations of the GeSn/Ge MQW approach regarding emission efficiency, which can be overcome by introducing SiGeSn ternary alloys as quantum confinement barriers.

The structure and charge storage properties of a trilayer structure with Ge nanocrystals embedded in HfO2 oxide were studied. The trilayer structure HfO2/Ge-HfO2/HfO2/p-Si was prepared by magnetron sputtering and subsequent rapid thermal annealing at 600 degrees C. The TEM investigations reveal the formation of Ge NCs embedded in crystalline HfO2 at the position of the Ge-HfO2 layer. The capacitors were made by Al evaporation on both front and backside of the trilayer structure. The C-V characteristics show a counterclockwise hysteresis with large memory window of 0.85 V which is given only by the contribution of the Ge NCs embedded in HfO2. The I-V characteristics show an asymmetric behavior, the currents are three times higher for the negative voltage than the positive one.