National Institute Of Materials Physics - Romania

Publications

847 articles found

491. Role of Ag addition in L1(0) ordering of FePt-based nanocomposite magnets

Authors: Crisan, AD; Vasiliu, F; Mercioniu, I; Crisan, O

Published: JAN 12 2014, PHILOSOPHICAL MAGAZINE, 94, 189, DOI: 10.1080/14786435.2013.850549

The FePt system has important perspectives as high-temperature corrosion-resistant magnets. In the form of rapidly solidified melt-spun ribbons, FePt-based magnets may exhibit in certain cases a two-phase hard-soft magnetic behaviour. The present paper deals with a microstructural and magnetic study of FePtAgB alloys with increasing Ag content. The aim is to identify and confirm the effect of Ag addition in decreasing the temperature of the FePt disorder-order structural phase transformation. A detailed high-resolution transmission electron microscopy study is employed, and the alternative disposal of hard and soft regions within the two-phase microstructure is observed and interpreted with respect to the X-ray diffraction results. In the as-cast Ag-containing samples, it is shown that there is an optimum of the Ag content for which best magnetic properties are obtained. Ag addition creates a nonlinear behaviour of the coercive field and the ordering parameter, similar to the RKKY interaction-induced interlayer exchange coupling (IEC) observed in magnetic layers separated by non-magnetic spacer layers. Direct formation of the L1(0) phase from the as-cast state in the FePtAgB alloys is reported with magnetic parameters compatible to other exchange spring permanent nanomagnets. These findings open novel perspectives into utilization of such alloys in applications requiring magnets operating in high-temperature industrial environments.

492. Room Temperature Ferromagnetic Mn:Ge(001)

Authors: Lungu, GA; Stoflea, LE; Tanase, LC; Bucur, IC; Radutoiu, N; Vasiliu, F; Mercioniu, I; Kuncser, V; Teodorescu, CM

Published: JAN 2014, MATERIALS, 7, DOI: 10.3390/ma7010106

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 degrees C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 degrees C) exhibited the formation of similar to 5-8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe similar to 2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge-Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

493. Engineering Magnetic Properties of Nanostructures via Size Effects and Interphase Interactions

Authors: Kuncser, V; Palade, P; Kuncser, A; Greculeasa, S; Schinteie, G

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 237, DOI: 10.1007/978-3-662-44479-5_7

Finite size effects and interfacial interactions as well as their influence on the magnetic properties of nanosized systems are discussed by starting from very basic principles of magnetism. Some preparation and subsequent processing tools for a proper engineering of the properties of such magnetic nanosized systems are introduced together with specific characterization tools. A summary of the most important technological applications related to size effects and interfacial interactions, with exemplifications starting from bio-medical applications of magnetic fluids to magnetoresitive multilayers for sensor applications are also provided.

494. Transition in conduction mechanism in GeSi nanostructures

Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:

GeSi-based nanostructures show unique properties which make them suitable for integrated circuit technology. The strong interest is to enhance their electronic properties in order to improve the device performance. In order to obtain fundamental knowledge on the electrical transport taking place in GeSi nanostructures we have investigated the effects of different microstructures on the electrical behavior of GeSi nanostructured films, by modifying the annealing conditions. We manufactured GeSi nanostructured films with equiatomic composition and different structures by co-sputtering followed by adequate annealing under different temperatures. For determining the electrical behavior we performed and modeled current-temperature I - T characteristics taking into account the films structures. We found that the electrical behavior changes with the film structure by evidencing a transition in conduction mechanism. In films that are almost crystallized, being formed of small GeSi nanocrystals separated by thin amorphous regions, the I - T dependence at low temperature is due to thermally activated tunneling of carriers between neighboring nanocrystals. In contrast, in the completely crystallized films with big GeSi nanocrystals and crystallized borders between them, the electrical behavior is a typical polycrystalline one. Our findings help to clarify the conduction mechanisms taking place in GeSi nanostructures and to provide a route to electronic devices with high performance based on these materials.

495. Tuned Sensitivity Towards H2S and NH3 with Cu Doped Barium Strontium Titanate Materials

Authors: Simion, CE; Sackmann, A; Teodorescu, VS; Rusti, CF; Piticescu, RM; Stanoiu, A

Published: 2014, ELECTROCERAMICS XIV CONFERENCE, 1627, 97, DOI: 10.1063/1.4901664

The different amount of Cu-doped Barium Strontium Titanate (BST) thick film materials have been tested for their gas-sensing performances towards NH3 and H2S under dry and 50% relative humidity (RH) background conditions. The optimum NH3 sensitivity was attained with 0.1mol% Cu-doped BST whereas the selective detection of H2S was highlighted using 5mol% Cu-doped BST material. No cross-sensitivity effects to CO, NO2, CH4 and SO2 were observed for all tested materials operated at their optimum temperature (200 degrees C) under humid conditions (50% RH). The presence of humidity clearly enhances the gas sensitivity to NH3 and H2S detection.

496. Numerical Procedure for Optimizing Dye-Sensitized Solar Cells

Authors: Mitroi, MR; Fara, L; Ciurea, ML

Published: 2014, JOURNAL OF NANOMATERIALS, 2014, DOI: 10.1155/2014/378981

We propose a numerical procedure consisting of a simplified physical model and a numerical method with the aim of optimizing the performance parameters of dye-sensitized solar cells (DSSCs). We calculate the real rate of absorbed photons (in the dye spectral range) G(real)(x) by introducing a factor beta < 1 in order to simplify the light absorption and reflection on TCO electrode. We consider the electrical transport to be purely diffusive and the recombination process only to occur between electrons from the TiO2 conduction band and anions from the electrolyte. The used numerical method permits solving the system of differential equations resulting from the physical model. We apply the proposed numerical procedure on a classical DSSC based on Ruthenium dye in order to validate it. For this, we simulate the J-V characteristics and calculate the main parameters: short-circuit current density J(sc), open circuit voltage V-oc, fill factor FF, and power conversion efficiency eta. We analyze the influence of the nature of semiconductor (TiO2) and dye and also the influence of different technological parameters on the performance parameters of DSSCs. The obtained results show that the proposed numerical procedure is suitable for developing a numerical simulation platform for improving the DSSCs performance by choosing the optimal parameters.

497. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method

Authors: Ciurea, ML; Teodorescu, VS; Stavarache, I; Lepadatu, AM

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 73, DOI: 10.1007/978-3-662-44479-5_3

The structure of GeSiO films resulted from deposition and annealing conditions draws their electrical behaviour. GeSiO films prepared either by magnetron sputtering or sol-gel method and subsequently annealed are formed of Ge nanocrystals and/or amorphous Ge nanoparticles embedded in amorphous SiO2 matrix. Firstly, the size effect which is the main effect in these systems produces specific quantum confinement energy levels in the enlarged forbidden energy band gap in nanocrystals. Secondly, these films are percolative systems, so that the main conduction mechanisms which govern the electrical behaviour are the tunnelling and hopping between neighbouring Ge nanocrystals or amorphous nanoparticles. Accordingly, the charge transport is strongly determined by the structure and morphology of films.

498. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures

Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:

We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.

499. ZnS and ZnO Semiconductor Nanoparticles Doped with Mn2+ Ions. Size Effects Investigated by EPR Spectroscopy

Authors: Stefan, M; Nistor, SV; Ghica, D

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 27, DOI: 10.1007/978-3-662-44479-5_1

Electron paramagnetic resonance (EPR) spectroscopy has been extensively employed to investigate the presence, localization, distribution and interaction with the host crystalline lattice of the paramagnetic point defects (intrinsic defects and transition metal ions) in semiconductors. The retrieval of such information for nanostructured semiconductors is considerably more difficult, due to the high disorder level in such systems, reflected in broad, featureless EPR spectra. We show here how, with proper adjustments of the EPR experiments and accurate numerical analysis of the resulting spectra, it was possible to obtain more accurate information regarding the localization and structure of various Mn2+ centers in ZnS and ZnO semiconductor nanoparticles (NPs). This lead to the observation and investigation of size related effects such as the presence of the extended lattice defect assisted incorporation of impurities in small (similar to 3 nm) cubic ZnS NPs, the dominant size induced lattice disorder observed for ZnO NPs, independent of the synthesis procedures, or the three steps decomposition of the epsilon-Zn(OH)(2) disordered shell of ZnS NPs with formation of new oxy-hydrated zinc compounds. These effects can be used to synthesize semiconductor nanoparticles with controlled size distribution, doping level and functionalized surfaces for specific technological applications.

500. Trapping centers in heavy ion irradiated silicon

Authors: Palade, C; Lazanu, S; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 128, DOI:

Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.