National Institute Of Materials Physics - Romania

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860 articles found

511. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures

Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:

We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.

512. ZnS and ZnO Semiconductor Nanoparticles Doped with Mn2+ Ions. Size Effects Investigated by EPR Spectroscopy

Authors: Stefan, M; Nistor, SV; Ghica, D

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 27, DOI: 10.1007/978-3-662-44479-5_1

Electron paramagnetic resonance (EPR) spectroscopy has been extensively employed to investigate the presence, localization, distribution and interaction with the host crystalline lattice of the paramagnetic point defects (intrinsic defects and transition metal ions) in semiconductors. The retrieval of such information for nanostructured semiconductors is considerably more difficult, due to the high disorder level in such systems, reflected in broad, featureless EPR spectra. We show here how, with proper adjustments of the EPR experiments and accurate numerical analysis of the resulting spectra, it was possible to obtain more accurate information regarding the localization and structure of various Mn2+ centers in ZnS and ZnO semiconductor nanoparticles (NPs). This lead to the observation and investigation of size related effects such as the presence of the extended lattice defect assisted incorporation of impurities in small (similar to 3 nm) cubic ZnS NPs, the dominant size induced lattice disorder observed for ZnO NPs, independent of the synthesis procedures, or the three steps decomposition of the epsilon-Zn(OH)(2) disordered shell of ZnS NPs with formation of new oxy-hydrated zinc compounds. These effects can be used to synthesize semiconductor nanoparticles with controlled size distribution, doping level and functionalized surfaces for specific technological applications.

513. Trapping centers in heavy ion irradiated silicon

Authors: Palade, C; Lazanu, S; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 128, DOI:

Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.

514. Synthesis and exceptional thermal stability of Mg-based bimetallic nanoparticles during hydrogenation

Authors: Krishnan, G; Negrea, RF; Ghica, C; ten Brink, GH; Kooi, BJ; Palasantzas, G

Published: 2014, NANOSCALE, 6, 11970, DOI: 10.1039/c4nr03885a

Here we report the extraordinary thermal stability of Mg rich bimetallic nanoparticles (NPs), which is important for hydrogen storage technology. The enhanced NP stability is accomplished because of two critical improvements: (i) no void development within NPs (nanoscale Kirkendall effect) during their formation and (ii) suppressed Mg evaporation and NP hollowing during Mg hydrogenation at elevated temperature. The mechanism leading to the improved thermal stability of Mg-based bimetallic NPs is shown to be due to MgH2 hydride formation before evaporation can take place. These findings were tested for various compositions of Mg with Ni, Cu, and Ti, which are interesting combinations of materials for hydrogen storage systems. To achieve this we first demonstrate the synthesis mechanism of Mg-Ni and Mg-Cu NPs, which is well controlled at the single particle level, in order to accomplish multi-shell, alloy and intermetallic structures of interest for hydrogen storage tests. Aberration corrected transmission electron microscopy was carried out to unravel the detailed atomic structure and composition of the bimetallic NPs after production, processing, and hydrogenation. Finally, a simple and effective methodology is proposed for tuning the composition of the Mg-based bimetallic NPs based on the temperature-dependent nucleation behavior of NPs in the gas-phase.

515. Stress Influenced Trapping Processes in Si Based Multi-Quantum Well Structures and Heavy Ions Implanted Si

Authors: Ciurea, ML; Lazanu, S

Published: 2014, INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2014 (ICCMSE 2014), 1618, 63, DOI: 10.1063/1.4897674

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

516. MICROSTRUCTURE OF THE a-C: H/W LAYERS DEPOSITED BY PLASMA ASSISTED SEQUENTIAL DEPOSITION METHOD

Authors: Acsente, T; Negrea, RF; Lazea-Stoyanova, A; Nistor, LC; Dinescu, G

Published: APR-JUN 2014, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 9, 450, DOI:

A study regarding the microstructure of a-C: H/W mixed materials deposited by plasma assisted sequential deposition method is presented. The deposition of layers was performed by cyclic exposing a substrate, for predefined time intervals, to two deposition processes, working in alternative sequences: Magnetron Sputtering (MS) for metal deposition and Plasma Enhanced Chemical Vapor Deposition (PECVD) for carbon deposition. During the deposition the plasma parameters were kept constant while the durations of the individual MS and PECVD steps were systematically modified. The deposited samples were investigated using both transmission and scanning electron microscopy methods. Nanocomposite structures are obtained if each metal deposition step is interrupted in the island stage of the layer formation followed by coverage with a continuous layer of carbon. Multilayer structures are obtained when the full development of a continuous metallic layer is allowed. The spatial periodicity of the multilayers can be adjusted in between tens and hundreds of nanometers by proper setting the duration of substrate exposure to plasma sources.

517. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

Authors: Pintilie, I; Pintilie, L; Filip, LD; Nistor, LC; Ghica, C

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 108, DOI: 10.1007/978-3-662-44479-5_4

Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

518. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

Authors: Stavarache, I; Lepadatu, AM; Stoica, T; Ciurea, ML

Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, 179, DOI: 10.1016/j.apsusc.2013.08.031

Ge-SiO2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO2 targets and subsequently annealed at different temperatures between 600 and 1000 C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 C and show that almost all Ge is crystallized in the films annealed at 700 C. The annealing at 800 C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 C annealed films, the current depends on temperature according to a T-1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800C annealed films, the current-temperature characteristic has a T-114 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO2. (C) 2013 Elsevier B.V. All rights reserved.

519. Ultraviolet and visible up-conversion luminescence of Er3+/Yb3+ co-doped CaF2 nanocrystals in sol-gel derived glass-ceramics

Authors: Georgescu, S; Voiculescu, AM; Matei, C; Secu, CE; Negrea, RF; Secu, M

Published: NOV 2013, JOURNAL OF LUMINESCENCE, 143, 156, DOI: 10.1016/j.jlumin.2013.04.002

Glass-ceramics containing Er3+/Yb3+ codoped CaF2 nanocrystals have been prepared by using the controlled crystallization above 650 degrees C of the (Yb3+/Er3+) codoped CaF2-SiO2 xerogels. X-ray diffraction and scanning electron microscopy data have revealed the formation of CaF2 nanoctystals of about 16 nm size. For pumping at 973 nm, this glass-ceramics shows, besides green and red up-conversion luminescence, violet (at similar to 408 nm) and near-ultraviolet emission (at similar to 380 nm). The mechanisms responsible for the upconversion luminescence are presented and discussed. The fluorescence lifetimes of the metastable levels responsible for violet, green and red luminescence are measured and their quantum efficiencies are estimated. (C) 2013 Elsevier B.V. All rights reserved.

520. Preparation by sol-gel and solid state reaction methods and properties investigation of double perovskite Sr2FeMoO6

Authors: Cernea, M; Vasiliu, F; Plapcianu, C; Bartha, C; Mercioniu, I; Pasuk, I; Lowndes, R; Trusca, R; Aldica, GV; Pintilie, L

Published: NOV 2013, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 33, 2490, DOI: 10.1016/j.jeurceramsoc.2013.03.026

Double perovskite Sr2FeMoO6 was prepared by two ways consisting in sol gel technique and solid-state reaction method. The resulting powders from gel and mixed oxides precursors showed microstructures consisting of very fine grains (0.5-0.8 mu m) and a crystalline perovskite structure. The structural and microstructural properties of the double perovskite Sr2FeMoO6 powders as-prepared and ceramics were compared. Tetragonal Sr2FeMoO6 pellets were prepared from the two powders by spark plasma sintering at: 1000, 1100 and 1200 degrees C and then annealing at 1200 degrees C, 2 h in 5%H-2/Ar. The pellets presented different magnetic characteristics. The saturation magnetization of the samples prepared by sol-gel is close to those prepared by conventional synthesis method. (C) 2013 Elsevier Ltd. All rights reserved.