National Institute Of Materials Physics - Romania

Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.

Here we report the extraordinary thermal stability of Mg rich bimetallic nanoparticles (NPs), which is important for hydrogen storage technology. The enhanced NP stability is accomplished because of two critical improvements: (i) no void development within NPs (nanoscale Kirkendall effect) during their formation and (ii) suppressed Mg evaporation and NP hollowing during Mg hydrogenation at elevated temperature. The mechanism leading to the improved thermal stability of Mg-based bimetallic NPs is shown to be due to MgH2 hydride formation before evaporation can take place. These findings were tested for various compositions of Mg with Ni, Cu, and Ti, which are interesting combinations of materials for hydrogen storage systems. To achieve this we first demonstrate the synthesis mechanism of Mg-Ni and Mg-Cu NPs, which is well controlled at the single particle level, in order to accomplish multi-shell, alloy and intermetallic structures of interest for hydrogen storage tests. Aberration corrected transmission electron microscopy was carried out to unravel the detailed atomic structure and composition of the bimetallic NPs after production, processing, and hydrogenation. Finally, a simple and effective methodology is proposed for tuning the composition of the Mg-based bimetallic NPs based on the temperature-dependent nucleation behavior of NPs in the gas-phase.

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

A study regarding the microstructure of a-C: H/W mixed materials deposited by plasma assisted sequential deposition method is presented. The deposition of layers was performed by cyclic exposing a substrate, for predefined time intervals, to two deposition processes, working in alternative sequences: Magnetron Sputtering (MS) for metal deposition and Plasma Enhanced Chemical Vapor Deposition (PECVD) for carbon deposition. During the deposition the plasma parameters were kept constant while the durations of the individual MS and PECVD steps were systematically modified. The deposited samples were investigated using both transmission and scanning electron microscopy methods. Nanocomposite structures are obtained if each metal deposition step is interrupted in the island stage of the layer formation followed by coverage with a continuous layer of carbon. Multilayer structures are obtained when the full development of a continuous metallic layer is allowed. The spatial periodicity of the multilayers can be adjusted in between tens and hundreds of nanometers by proper setting the duration of substrate exposure to plasma sources.

Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

Ge-SiO2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO2 targets and subsequently annealed at different temperatures between 600 and 1000 C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 C and show that almost all Ge is crystallized in the films annealed at 700 C. The annealing at 800 C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 C annealed films, the current depends on temperature according to a T-1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800C annealed films, the current-temperature characteristic has a T-114 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO2. (C) 2013 Elsevier B.V. All rights reserved.

Glass-ceramics containing Er3+/Yb3+ codoped CaF2 nanocrystals have been prepared by using the controlled crystallization above 650 degrees C of the (Yb3+/Er3+) codoped CaF2-SiO2 xerogels. X-ray diffraction and scanning electron microscopy data have revealed the formation of CaF2 nanoctystals of about 16 nm size. For pumping at 973 nm, this glass-ceramics shows, besides green and red up-conversion luminescence, violet (at similar to 408 nm) and near-ultraviolet emission (at similar to 380 nm). The mechanisms responsible for the upconversion luminescence are presented and discussed. The fluorescence lifetimes of the metastable levels responsible for violet, green and red luminescence are measured and their quantum efficiencies are estimated. (C) 2013 Elsevier B.V. All rights reserved.

Double perovskite Sr2FeMoO6 was prepared by two ways consisting in sol gel technique and solid-state reaction method. The resulting powders from gel and mixed oxides precursors showed microstructures consisting of very fine grains (0.5-0.8 mu m) and a crystalline perovskite structure. The structural and microstructural properties of the double perovskite Sr2FeMoO6 powders as-prepared and ceramics were compared. Tetragonal Sr2FeMoO6 pellets were prepared from the two powders by spark plasma sintering at: 1000, 1100 and 1200 degrees C and then annealing at 1200 degrees C, 2 h in 5%H-2/Ar. The pellets presented different magnetic characteristics. The saturation magnetization of the samples prepared by sol-gel is close to those prepared by conventional synthesis method. (C) 2013 Elsevier Ltd. All rights reserved.

Sol-gel chemistry within the pores of a polycarbonate template membrane was used for the preparation of Eosin Y-SiO2 hybrid nano- and microrods, using tetraethylorthosilicate [TEOS, Si(OC2H5)(4)] as the precursor in the presence of trifluoroacetic acid (TFA) catalyst. The ethanolic solution of Eosin-Y was added to the silica sal to trap dye molecules inside the SiO2 gel network during the gelation. Structural and morphological characterization using scanning electron microscopy (SEM) and luminescence microscopy have shown the formation of rods with 200 nm and 1.2 mu m diameter and about 30 mu m length, exhibiting luminescence properties. Spectroscopic characterization has shown that the luminescence is due to Eosin-Y molecule in the xerogel porous network, surrounded by a solvation shell given mainly by the water. (C) 2013 Elsevier B.V. All rights reserved.

Electric and magnetic properties of symmetric and asymmetric Pb(Zr-0.2 Ti-0.8)O-3-CoFe2O4 (PZT/CFO) heterostructures, grown by pulsed laser deposition on SrTiO3 (100) substrates with a 25 nm SrRuO3 (SRO) buffer layer as bottom electrode, were investigated by using hysteresis and capacitance measurements. X-ray diffraction, and transmission electron microscopy investigations reveal the high quality crystalline structure and the epitaxial relationship between SRO, PZT and CFO. The electric polarization-voltage hysteresis reveals that the remnant polarization and the coercive field are significantly affected by the CFO layer. The frequency dependence of capacitance suggests a Maxwell-Wagner type relaxation at low frequencies and is also affected by the presence of the PZT/CFO interface(s). The magnetic hysteresis measurements infer the possible presence of another spinel phase (Co3O4) in the CFO film, due to the lattice mismatch at the PZT/CFO interfaces, and with direct influence on the magnetic response of the structure. According to the electric and magnetic characterization, better room temperature multiferroic properties would be expected for the symmetric heterostructure. (C) 2013 Published by Elsevier B. V.