National Institute Of Materials Physics - Romania

Quantum well solar cells with p-i-n structure are presented. The physical processes in multiple quantum well solar cells, the materials commonly used for photovoltaic applications, and technological aspects are analyzed. The quantum confinement effect produces resonant energy levels located in the valence and conduction bands of well layers. In addition, it produces energy quantum confinement levels located in the energy band gap of both well and barrier layers. The absorption on both resonant and quantum confinement levels leads to an extension of the internal quantum efficiency in near infrared domain. Several structures with different absorbers from 3-5 and 4 groups are described and discussed. Various technological and design solutions, such as multiple quantum well solar cells with graded band gap, with tandem configurations, with strain-balanced structure, and strain-balanced structure improved with nanoparticles deposited atop are analyzed. The cell parameters are discussed and related to the materials and technology.

In this article, we present and discuss how the stress influences the trapping phenomena in both the bulk Si and nanostructures based on Si. For this, we use single crystal Si irradiated with 28 MeV iodine ions of fluence (5 +/- 0.5) x 10(11) ions/cm(2) and 2D Si based nanostructures of (nc-Si/CaF2)(50) multilayers. The method of thermally stimulated discharge currents without bias was employed to investigate the trapping phenomena and the modeling of the discharge current curves was carried out. In the case of irradiated Si, we have modeled the discharge currents considering six trapping levels and a supplementary stress electric field independent of temperature superposed on the frozen-in electric field produced by the charged traps at low temperature. The stress electric field is due to the stopped iodine ions which are heavier than those of Si host. Six traps are evidenced and their parameters are calculated. In the (nc-Si/CaF2)(50) multilayer structures, we experimentally evidenced traps which produce in the discharge current maxima with two shapes. Three maxima have normal shape and the others five maxima are narrow and sharp looking like spikes. We modeled the discharge current curves taking for the concentration a power temperature dependence law, and for the cross section a Gaussian temperature dependence.

This paper analyses and discusses the effect of Ge/Si atomic ratio and annealing temperature on the conduction mechanisms governing the electrical behavior of Ge-SiO2 films containing Ge nanoparticles embedded in amorphous SiO2 matrix. For this, the experimental conductance-temperature curves are modeled in correlation with the microstructure findings for two types of films. One type of films has a lower Ge/Si ratio of 0.73 and was obtained by magnetron sputtering followed by annealing in H-2, at 500 degrees C, while the second one has a higher ratio of 1.86 and was obtained also by sputtering, but was annealed in N-2, at 800 degrees C. Both types of films show an electrical behavior with a T-1/4 conductance dependence on temperature, typical for hopping mechanism.

The presence and structure of paramagnetic point defects in C-13 and O-17 implanted ultrapure Si single-crystal material, two impurities which seem to play a major role in the detectors performance degradation and radiation resistance enhancement, respectively, are reported before and after irradiation with 6 MeV electrons. The investigation, performed by Q-band electron spin resonance spectroscopy in the 300 - 10 K temperature range, included also reference ultrapure and O-16 doped single-crystal Si-platelets. It resulted in the observation of points defects associated with lattice defects as dangling bonds and impurities.

ZnO-x%Eu2O3 (x=5 wt.%) binary oxide with straight strips morphology was successfully synthesized by hydrothermal route, using cetyltrimethylammonium bromide (CTAB) as template ZnSO4. Eu(NO3)(3)center dot 5H(2)O as inorganic precursors and ammonium hydroxide solution 28% NH3 for adjusting the pH to 11 value. The morphology, structure, photoluminescence and surface chemistry were investigated. The results highlighted that ZnO-Eu2O3 binary oxide shows straight strip morphology and crystalline framework indexed to wurtzite ZnO while Eu2O3 was detected as secondary phase. Surface chemistry revealed the presence of Eu3+. High sensor signal to 3 ppm NO2 together with its low sensitivity towards CO recommend this material as a good candidate in selective detection of NO2. (C) 2012 Elsevier B.V. All rights reserved.

The effects of 5 x 10(11) cm(-2 6+)I(127) ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The defects produced by irradiation which act as traps were investigated. Thermally stimulated current measurements without externally applied bias were used, and for this the traps were charged by illuminating samples with 1000, 800, and 400 nm wavelengths. The discharge currents were recorded and modeled, and therefore the parameters of the traps were determined. The presence of I ions, heavier than Si, stopped into the target was modeled as a temperature independent electric field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772015]

The hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr0.2Ti0.8)O-3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5V at room temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765723]

Gas sensing peculiarities of chromiumoxide (Cr2O3) nanoparticles, obtained by hydrothermal reaction at moderate temperature and subsequent thermal annealing, were studied. The structure and morphology of the obtained Cr2O3 samples were investigated by X-ray diffraction and transmission electron microscopy techniques. Gas sensing measurements revealed their selective sensitivity to nitrogen dioxide (NO2) at 200 degrees C relative to carbon monoxide (CO), both in dry and humid air. Higher selectivity towards NO2 is attributed to the material surface reactivity even at low operating temperatures. This property was experimentally highlighted by work function changes, as a complementary investigation method to basic electrical resistance. Thus, it was observed that the surface reactivity of Cr2O3 (calcinated at 1000 degrees C) towards NO2 is higher compared to CO and less influenced by the relative humidity of the surrounding atmosphere. The present study reveals possible applications in the selective detection of NO2 based on Cr2O3. (C) 2012 Elsevier B.V. All rights reserved.

Ba(Zn1/3Ta2/3)O-3 (BZT) thin films were grown on Pt-coated Si substrates at 500 degrees C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 degrees C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the -100 to + 100 degrees C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/degrees C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 degrees C. (C) 2012 Elsevier B. V. All rights reserved.

Large-scale microstructures were imprinted on the surface of silicon with dimensions of 1 mm x 1 mm by femtosecond laser line-by-line scanning irradiation. The scanning was made under air and under chlor/hydrogen based liquid layers. Scanning electron microscope investigations evidenced homogeneous surface microstructures, such as: ripples with sub-wavelengths dimensions, Si pillars and directional oriented bacilliform structures. The dependence of the surface morphology on laser energy, scanning speed and irradiation media was analyzed. In air, the microstructure changes from directional-arranged bacilliform structures to well-known ripple structures with a width of about 525 nm. When using the liquid media, we observe ripple structures with a width of about 370 nm and an overlapping of those that evolve in certain regions into Si pillars. The surfaces show interesting gradient topography behaviour which could be used as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology on cell adhesion and growth. By using chlor and hydrogen based liquids we were able to explore the microstructuring of the silicon by line-by-line irradiation process using the femtosecond laser. (C) 2011 Elsevier B. V. All rights reserved.