National Institute Of Materials Physics - Romania

Publications

860 articles found

591. Introduction of the Ge nanostructures in a Si matrix via nanosphere lithography deposition

Authors: Ulmeanu, M; Ghica, C

Published: MAR 2011, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 5, 280, DOI:

Experimental studies on patterning hexagonal Ge nanostructures have been conducted on Si substrates through deposition of Ge with polystyrene spheres as a mask. The size distribution of the patterned Ge nanostructures is narrow with the full width at half maximum being less than 10% of the dot size. The two-dimensional patterned Ge nanostructures were further introduced in a Si matrix. Cross-section transmission electron microscopy reveals periodic dark stripes representing the deposited Ge dots in an a-Si matrix.

592. Eu3+-doped CaF2 nanocrystals in sol-gel derived glass-ceramics

Authors: Secu, M; Secu, CE; Ghica, C

Published: FEB 2011, OPTICAL MATERIALS, 33, 617, DOI: 10.1016/j.optmat.2010.11.016

Glass-ceramics containing Eu3+-doped CaF2 nanocrystals of about 16 nm size have been made using the controlled crystallization at higher temperatures of the Eu3+-doped CaF2-SiO2 xerogels. In the glass-ceramic material the Eu3+ ions are embedded in both silica network and in the non-centrosymmetric sites of the CaF2 nanocrystals structure. Lower phonon energy of CaF2 and the dehydratation processes reduce the probability of non-radiative de-excitations and as a result a luminescence enhancement and an increase of the PL lifetime is observed. Eu-doping modifies the traps distribution within the glass-ceramics and as a result an additional broad thermoluminescence peak at about 380 degrees C was observed. The peak was assigned to the recombination of the electrons thermal released from the Eu3+-related traps in the glass matrix and in the CaF2 nanocrystals. (C) 2010 Elsevier B.V. All rights reserved.

593. Substitutional and surface Mn2+ centers in cubic ZnS:Mn nanocrystals. A correlated EPR and photoluminescence study

Authors: Stefan, M; Nistor, SV; Ghica, D; Mateescu, CD; Nikl, M; Kucerkova, R

Published: JAN 20 2011, PHYSICAL REVIEW B, 83, DOI: 10.1103/PhysRevB.83.045301

The EPR, radioluminescence, and photoluminescence of cubic ZnS (cZnS) nanocrystals (NCs) with a narrow size distribution centered at 2 nm, doped with 0.1, 0.2, and 0.5 at.% Mn2+ ions were investigated. Besides the main lines from substitutional Mn2+ ions localized in the core of the NCs next to a stacking defect, the EPR spectra exhibited two broader hyperfine sextets, attributed to the so-called Mn(II)and Mn(III) surface centers, which could be separated by adequate thermal treatments. The contribution to the photoluminescence from the Mn2+ ions at various sites was further determined from the analysis of the steady-state and time-resolved photoluminescence data from cZnS: Mn NCs subjected to thermal treatments and from cZnS: Mn single crystals. Thus, the main emission consisting of two intense overlapping bands peaking at 596 and 630 nm was attributed to the T-4(1)-(6)A(1) transition of the substitutional Mn2+ ions in the core of the cZnS nanocrystals and to residual aggregated Mn2+ ions, respectively, the last ones being responsible for a broad EPR line observed in the X-band spectrum. The Mn(II) and Mn(III) centers, consisting of Mn2+ ions in the oxidized and hydrolyzed surface layer of the NCs, respectively, are only indirectly involved in the energy transfer to the substitutional Mn2+ centers, very likely through pairs interaction.

594. Stress-induced traps in multilayered structures

Authors: Ciurea, ML; Lazanu, S; Stavarache, I; Lepadatu, AM; Iancu, V; Mitroi, MR; Nigmatullin, RR; Baleanu, CM

Published: JAN 1 2011, JOURNAL OF APPLIED PHYSICS, 109, DOI: 10.1063/1.3525582

The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to "normal" traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture cross-sections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3525582]

595. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Authors: Stavarache, I; Lepadatu, AM; Gheorghe, NG; Costescu, RM; Stan, GE; Marcov, D; Slav, A; Iordache, G; Stoica, TF; Iancu, V; Teodorescu, VS; Teodorescu, CM; Ciurea, ML

Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4

Transmission electron microscopy and X-ray photoelectron spectroscopy analyses are performed to investigate Ge nanoparticles embedded in an amorphous SiO2 matrix. GeSiO thin films are prepared by two methods, sol-gel and radio frequency magnetron sputtering. After the deposition, the sol-gel films are annealed in either N-2 (at 1 atm and 800 A degrees C) or H-2 (at 2 atm and 500 A degrees C), and the sputtered films in H-2 (at 2 atm and 500 A degrees C), to allow Ge segregation. Amorphous Ge-rich nanoparticles (3-7 nm size) are observed in sol-gel films. Crystalline Ge nanoparticles in the high pressure tetragonal phase (10-50 nm size) are identified in the sputtered films. The size of the nanoparticles increases with Ge concentration in the volume of the film. At the film surface, the Ge concentration is much larger that in the volume for both sol-gel and sputtered films. At the same time, at the film surface, only oxidized Ge is observed.

596. Charge-Transfer Satellite in Ce@C-82 Probed by Resonant X-ray Emission Spectroscopy

Authors: Yamaoka, H; Kotani, A; Kubozono, Y; Vlaicu, AM; Oohashi, H; Tochio, T; Ito, Y; Yoshikawa, H

Published: JAN 2011, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 80, DOI: 10.1143/JPSJ.80.014702

The electronic structure of metallofullerene Ce@C-82 is probed by resonant x-ray emission spectroscopy at the Ce L-3 absorption edge. We observed a satellite structure in x-ray absorption and resonant emission spectra for Ce@C-82, which, we show, corresponds to the charge transfer induced by the core-hole potential in the final state, similarly to Pr@C-82. This charge-transfer satellite may be a common feature in metallofullerenes. The temperature dependence of the electronic structure is also investigated.

597. Structural investigations on yttrium - doped ceria nanopowders obtained by coprecipitation method

Authors: Mercioniu, I; Tartaj, J; Vlaicu, AM; Pogrion, NP

Published: JAN 2011, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 5, 149, DOI:

The attractive properties of ceria, particularly the conductivity and chemical stability, have led to vast research efforts to investigate, characterize and develop such materials. One of the main applications of this ceramic is in the solid oxides fuel cells for intermediate temperatures IT-SOFC. The aim of this work is the preparation and characterization of cubic ceria nanopowders doped with 10 mol % yttria or Scandia. A thermal treatment (calcinations) was applied on the obtained nanopowders, which were consequently investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected aria electron diffraction (SAED).

598. Structural and chemical properties of cerium-magnetoplumbite in cerium based IT-SOFC compounds

Authors: Vlaicu, AM; Mercioniu, I; Vasile, BS; Negrila, CC; Logofatu, C; Cretu, NC; Nita, P; Popescu-Pogrion, N

Published: JAN 2011, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 5, 145, DOI:

Yttria doped ceria reinforced with yttria doped alumina compound for IT-SOFC applications has been prepared by sol-gel method and sintered at 1300 degrees C, 1400 degrees C, 1500 degrees C. XRD, and SEM show the presence of a needle-like cerium-magnetoplumbite (CeAl11O17) phase in the compound; the oxygen deficient phase grows from the alumina phase by using ceria from the surrounding matrix and releasing oxygen ions As the sintering temperature is increased, the alumina phase is gradually transformed into CeAl11O17. Compared to the yttria doped ceria without reinforcement, the obtained compounds with ceria-magnetoplumbite show only a slight decrease of the Young elasticity modulus. However, the samples become brittle after backing in oxygen atmosphere (1000 degrees C, and 1500 degrees C).

599. Studies Concerning the Microhardness of Sintered Carbon Steels Obtained from Fe and Fe3C Nanopowders

Authors: Ciobanu, M; Nicolicescu, C; Bejan, S; Batin, G; Mercioniu, I

Published: 2011, RESEARCHES IN POWDER METALLURGY, 672, +, DOI: 10.4028/www.scientific.net/MSF.672.223

Replacing the graphite with carbides in the mixture with Fe powder may be an alternative technological process, by the fact that as carbides decompose when heated, the carbon is set free and diffuses into the Fe network ensuring chemical and structural homogeneity corresponding to sintered steels. Using cementite nanopowder mix with Fe powder is to ensure a better compaction by pressing, less time to decompose and C diffusion into the Fe network in a remarkably chemical homogeneity. The obtaining procedure for Fe3C consists in direct carburation of Fe powder in a special chamber.

600. OPTICAL CHARACTERIZATION OF TiO2-Ge NANOCOMPOSITE FILMS OBTAINED BY REACTIVE MAGNETRON SPUTTERING

Authors: Slav, A

Published: JUL-SEP 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 920, DOI:

The optical band gaps of the nanocomposite TiO2-Ge thin films deposited by reactive co-sputtering method onto quartz and silicon substrates at different oxygen partial pressures have been investigated by the optical characterization method. Using 2%, 4% and 6% oxygen dilution in argon, an atomic content of 3%, 22% and 35% germanium in the TiO2 oxide matrix was obtained. Structural characterization of layers was performed by X-ray diffraction and the result revealed that no crystallization phenomena have occurred after the annealing at 700 degrees C. When increasing the annealing temperature, at 750 degrees C the TiO2 anatase phase crystallizes and subsequently it partially convert to the rutile polymorph (at 800 degrees C). The optical band gaps were analyzed using Tauc plot formula for direct and indirect transitions gap. Intermediate energy levels appear in the TiO2 energy gap and a slight increasing of the indirect transitions gap with germanium content was noticed.