National Institute Of Materials Physics - Romania

The effects of 5 x 10(11) cm(-2 6+)I(127) ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The defects produced by irradiation which act as traps were investigated. Thermally stimulated current measurements without externally applied bias were used, and for this the traps were charged by illuminating samples with 1000, 800, and 400 nm wavelengths. The discharge currents were recorded and modeled, and therefore the parameters of the traps were determined. The presence of I ions, heavier than Si, stopped into the target was modeled as a temperature independent electric field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772015]

The hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr0.2Ti0.8)O-3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5V at room temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765723]

Gas sensing peculiarities of chromiumoxide (Cr2O3) nanoparticles, obtained by hydrothermal reaction at moderate temperature and subsequent thermal annealing, were studied. The structure and morphology of the obtained Cr2O3 samples were investigated by X-ray diffraction and transmission electron microscopy techniques. Gas sensing measurements revealed their selective sensitivity to nitrogen dioxide (NO2) at 200 degrees C relative to carbon monoxide (CO), both in dry and humid air. Higher selectivity towards NO2 is attributed to the material surface reactivity even at low operating temperatures. This property was experimentally highlighted by work function changes, as a complementary investigation method to basic electrical resistance. Thus, it was observed that the surface reactivity of Cr2O3 (calcinated at 1000 degrees C) towards NO2 is higher compared to CO and less influenced by the relative humidity of the surrounding atmosphere. The present study reveals possible applications in the selective detection of NO2 based on Cr2O3. (C) 2012 Elsevier B.V. All rights reserved.

Ba(Zn1/3Ta2/3)O-3 (BZT) thin films were grown on Pt-coated Si substrates at 500 degrees C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 degrees C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the -100 to + 100 degrees C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/degrees C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 degrees C. (C) 2012 Elsevier B. V. All rights reserved.

Large-scale microstructures were imprinted on the surface of silicon with dimensions of 1 mm x 1 mm by femtosecond laser line-by-line scanning irradiation. The scanning was made under air and under chlor/hydrogen based liquid layers. Scanning electron microscope investigations evidenced homogeneous surface microstructures, such as: ripples with sub-wavelengths dimensions, Si pillars and directional oriented bacilliform structures. The dependence of the surface morphology on laser energy, scanning speed and irradiation media was analyzed. In air, the microstructure changes from directional-arranged bacilliform structures to well-known ripple structures with a width of about 525 nm. When using the liquid media, we observe ripple structures with a width of about 370 nm and an overlapping of those that evolve in certain regions into Si pillars. The surfaces show interesting gradient topography behaviour which could be used as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology on cell adhesion and growth. By using chlor and hydrogen based liquids we were able to explore the microstructuring of the silicon by line-by-line irradiation process using the femtosecond laser. (C) 2011 Elsevier B. V. All rights reserved.

The hysteretic behavior of the epitaxial Pb(Zr,Ti)O-3 thin films with different top metal electrodes is studied, with emphasis on the influence of the leakage current and trap generation current on the shape of the loop as well as on the magnitude of the measured polarization. Cu, Pt, and SrRuO3 were used as top contacts and important differences were observed for measurements performed in both dynamic and static modes, although the contacts were deposited on the same epitaxial Pb(Zr,Ti)O-3 film grown on SrRuO3/SrTiO3 substrate. A peculiar behavior was observed especially for the static hysteresis loops where, depending of the top contact, the loop is influenced mainly by the leakage current (Pt) or by the trap generation current (Cu and SrRuO3). The last one can contribute with an additive charge, having a linear dependence on the applied voltage, as suggested by the simple model developed to explain the abnormally high values of the dielectric constant extracted from the linear part of the static hysteresis loop. It is concluded that the properties of the top electrode interface can significantly impact the hysteretic behavior of the ferroelectric films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754318]

Acid-base interactions between amino-silica and carboxyl-gold protected nanoparticles, functionalized or not with free stable radicals or fluorescent moieties, were studied by ESR, fluorescence, and TEM. While those nanoparticles are stable in solution, mixing them induces aggregation, due to acid-base interactions; addition of a base or an acid redissolves them. By ESR, strong spin-spin interactions were noticed; by fluorescence, only small differences may be observed, while by TEM, it was noticed that gold nanoparticles are distributed evenly on the surface of the silica nanoparticles. (C) 2012 Elsevier B.V. All rights reserved.

The effects of the self-assembled 4,4'-thio-bis-benzenethiolate protected gold nanoclusters onto a p-GaAs (1 0 0) electrode were examined by AFM, XPS, SHG and EIS investigations. The AFM and XPS results revealed a well-ordered overlayer exhibiting a bi-modal highly correlated fractal behavior which, however, cannot fully protect the semiconducting surface against the oxidation in air. The EIS data pointed out the influence exerted by the gold-monolayer protected clusters (Au-MPCs) over the charging/discharging processes observed at p-GaAs (1 0 0) electrode. Although the applied potential is varied linearly, the potential drop within the semiconductor space charge region as well as that across the Au-MPCs layer undergoes stepped changes supposed to result in the discrete charging of the Au-MPCs. These effects point to an electronic equilibrium between the Au-MPCs and the semiconducting substrate. Fermi level pinning and enhancement of the SHG response in the potential range where the surface/interface states in the semiconductor band gap become electrically active bring further proof in this respect. (c) 2012 Elsevier Ltd. All rights reserved.

The films containing Ge nanoparticles embedded in SiO2 matrix were prepared by RF magnetron sputtering and subsequently by thermal annealing. Their structure was investigated by conventional transmission electron microscopy and high resolution transmission electron microscopy together with energy-dispersive X-ray spectroscopy. The electrical behavior of films was studied by measuring current-temperature and current-voltage characteristics. The structure investigation reveals two kinds of features: a low density of big Ge nanoparticles with sizes from 20 to 50 nm and a network of small amorphous Ge nanoregions/nanoparticles (5 nm size or less) with high density, both being embedded in amorphous SiO2 matrix. The electrical transport was shown to take place through the network of amorphous Ge nanoregions. At low temperature, the T-1/4 dependence of the current was evidenced, while at high temperature, the T-1 Arrhenius dependence was found. At both low and high temperatures, the conductivity is nearly constant. The behavior at low temperature was explained by the hopping mechanism on localized states located in a band near the Fermi energy, while at high temperature by the charge excitation to the extended states.

The purpose of this work was to obtain precipitated calcium carbonate (PCC) particles in polymorphic form of vaterite via gas-liquid route in controlled pH conditions. The effect of CO2 concentration (12.5-100%), feed gas (CO2-air) flow rate, pH, and conductivity of solution upon the PCC particles properties was studied. On the basis of the experimental data, the main factors leading to vaterite formation as major product were established. It was found that the buffer solution has a decisive role in determining polymorphic phase of PCC while CO2 concentration and feed gas flow rate have no significant influence. It was demonstrated that spherical vaterite particles of high purity can be produced under controlled reaction conditions. Also, some considerations on the mechanism of carbonation process were formulated.