National Institute Of Materials Physics - Romania

Publications

847 articles found

621. Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots

Authors: Nistor, SV; Stefan, M; Nistor, LC; Goovaerts, E; Van Tendeloo, G

Published: JAN 15 2010, PHYSICAL REVIEW B, 81, DOI: 10.1103/PhysRevB.81.035336

Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dots-QDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter vertical bar D vertical bar = 41 x 10(-4) cm(-1). The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.

622. STUDY OF THE INTERACTIONS OF IONS IN SILICON: TRANSIENT PROCESSES AND DEFECT PRODUCTION

Authors: Lazanu, S; Lazanu, I; Iordache, G; Stavarache, I; Lepadatu, A; Slav, A

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 332, DOI:

The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.

623. INFLUENCE OF THE DEPOSITION CONDITIONS ON THE PROPERTIES OF TiO2-Ge NANOCOMPOSITE FILMS SYNTHESIZED BY MAGNETRON CO-SPUTTERING

Authors: Slav, A; Stan, GE; Galca, AC

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 340, DOI:

A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix. Early studies on TiO2-Ge nanocomposites have shown promises for their use as an alternative in photovoltaic applications. In this study we report the TiO2-Ge films synthesis by reactive magnetron co-sputtering. Their properties were evaluated by compositional (EDS), structural (XRD, FTIR) and optical (UV-Vis) characterizations.

624. Direct Production of a Novel Iron-Based Nanocomposite from the Laser Pyrolysis of Fe(CO)(5)/MMA Mixtures: Structural and Sensing Properties

Authors: Alexandrescu, R; Morjan, I; Tomescu, A; Simion, CE; Scarisoreanu, M; Birjega, R; Fleaca, C; Gavrila, L; Soare, I; Dumitrache, F; Prodan, G

Published: 2010, JOURNAL OF NANOMATERIALS, 2010, DOI: 10.1155/2010/324532

Iron/iron oxide-based nanocomposites were prepared by IR laser sensitized pyrolysis of Fe(CO)(5) and methylmethacrylate (MMA) mixtures. The morphology of nanopowder analyzed by TEM indicated that mainly core-shell structures were obtained. X-ray diffraction techniques evidence the cores as formedmainly by iron/iron oxide crystalline phases. A partially degraded (carbonized) polymeric matrix is suggested for the coverage of the metallic particles. The nanocomposite structure at the variation of the laser density and of the MMA flow was studied. The new materials prepared as thick films were tested for their potential for acting as gas sensors. The temporal variation of the electrical resistance in presence of NO2, CO, and CO2, in dry and humid air was recorded. Preliminary results show that the samples obtained at higher laser power density exhibit rather high sensitivity towards NO2 detection and NO2 selectivity relatively to CO and CO2. An optimum working temperature of 200 degrees C was found.

625. Effects of layer by layer deposition on the structural and optical characteristics of thin films

Authors: Prepelita, P; Medianu, R; Garoi, F; Moldovan, A; Vlaicu, AM

Published: 2010, ROMOPTO 2009: NINTH CONFERENCE ON OPTICS: MICRO- TO NANOPHOTONICS II, 7469, DOI: 10.1117/12.859695

CuIn1-xGaxS2 (CIGS2) thin-films for solar cells were prepared by rf-magnetron sputtering and were deposited on glass substrate. These films were prepared using a stepwise process consisting of succesive deposition of CuInGa (d = 1500 nm) and ZnS (d = 200 nm) layers. Each layer was structurally characterized by X-ray diffraction and atomic force microscopy. The microstructural and optical properties of CIGS2 component films of the solar cell in comparison with those of ZnS and CuInGa films separately deposited onto glass substrates under the same conditions, were studied. Transmission spectra of our thin films are strongly influenced by deposition conditions and nature of the support material and they were recorded for each component film and CIGS2 solar cell.

626. DIFFERENCES IN THE GAS SENSING PROPERTIES READOUT WITH N AND P-TYPE MOX MATERIALS

Authors: Simion, CE; Tomescu-Stanoiu, A

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 204, DOI:

The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.

627. IMPROVING THE CUBIC ZnS NANOCRYSTALS QUALITY BY SELF-ASSEMBLING INTO A MESOPOROUS STRUCTURE

Authors: Nistor, SV; Nistor, LC; Stefan, M; Ghica, D; Mateescu, CD; Birjega, R

Published: 2010, ROMANIAN REPORTS IN PHYSICS, 62, 328, DOI:

Nanocrystals of cubic ZnS (cZnS) doped with 02 % mol Mn2+, self-assembled into a mesoporous structure, have been prepared at room temperature by a surfactant-assisted liquid-liquid reaction The X-ray diffraction measurements confirm the formation of a sponge-like mesoporous structure built from ZnS nanocrystals with cubic (sphalerite) structure and pores of similar diameter of (1 8 +/- 0 2) nm. The Transmission Electron Microscopy (TEM) images show that the mesoporous structure consists of nanocrystals of cZnS with a tight size distribution centered around the average diameter value (21 +/- 0 3) nm The analysis of the observed Election Paramagnetic Resonance (EPR) spectrum demonstrates the presence of the Mn2+ activating ions at isolated sites in the mesoporous material, resulting in three types of paramagnetic centers called Mn2+(I), Mn2+(II) and Mn2+(III) The EPR spectrum of the Mn2+(I) center, attributed to substitutional Mn2+ ions at Zn2+ cation sites in the ZnS nanocrystals, exhibits the smallest linewidth values reported so far, reflecting an increased lattice ordering The high quality of the nanocrystals forming the mesoporous cZnS Mn, as reflected in a tight nanocrystallites size distribution and reduced crystallites lattice disorder, is attributed to the restraining effect of the self-assembling

628. TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA

Authors: Lepadatu, AM; Stavarache, I; Lazanu, S; Iancu, V; Mitroi, MR; Nigmatulin, RR; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 374, DOI:

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.

629. HYDROGEN-PLASMA INDUCED PLATELETS AND VOIDS IN SILICON WAFERS

Authors: Ghica, C; Nistor, LC; Mironov, B; Vizireanu, S

Published: 2010, ROMANIAN REPORTS IN PHYSICS, 62, 340, DOI:

Silicon wafers have been submitted to hydrogen RF-plasma treatment in various experimental conditions The hydrogen RF-plasma treatment on Si wafers induces two kinds of effects surface corrugation and formation of structural defects below the wafer surface The structural defects resulted after the plasma treatments have been investigated by conventional and high-resolution transmission electron microscopy (CTEM and HRTEM) techniques The specificity of the induced extended defects due to hydrogen decoration has been emphasized

630. Quantum Confinement in Nanometric Structures

Authors: Ciurea, ML; Iancu, V

Published: 2010, NEW TRENDS IN NANOTECHNOLOGY AND FRACTIONAL CALCULUS APPLICATIONS, +, DOI: 10.1007/978-90-481-3293-5_5

This paper discusses the quantum confinement effects in nanometric structures that form low dimensional systems. In such systems, each surface/interface acts like a potential barrier, i.e. the wall of a quantum well, generating new energy levels. These levels are computed in a model that uses the approximation of the infinite rectangular quantum wells. The model is adapted for 2D, 1D and 0D systems, respectively. Different applications are discussed. The differences between the model results and the experimental data are proved to be of the same order of magnitude as the differences between the levels computed within the frame of infinite and finite quantum well approximations.