National Institute Of Materials Physics - Romania

CuIn1-xGaxS2 (CIGS2) thin-films for solar cells were prepared by rf-magnetron sputtering and were deposited on glass substrate. These films were prepared using a stepwise process consisting of succesive deposition of CuInGa (d = 1500 nm) and ZnS (d = 200 nm) layers. Each layer was structurally characterized by X-ray diffraction and atomic force microscopy. The microstructural and optical properties of CIGS2 component films of the solar cell in comparison with those of ZnS and CuInGa films separately deposited onto glass substrates under the same conditions, were studied. Transmission spectra of our thin films are strongly influenced by deposition conditions and nature of the support material and they were recorded for each component film and CIGS2 solar cell.

The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.

Nanocrystals of cubic ZnS (cZnS) doped with 02 % mol Mn2+, self-assembled into a mesoporous structure, have been prepared at room temperature by a surfactant-assisted liquid-liquid reaction The X-ray diffraction measurements confirm the formation of a sponge-like mesoporous structure built from ZnS nanocrystals with cubic (sphalerite) structure and pores of similar diameter of (1 8 +/- 0 2) nm. The Transmission Electron Microscopy (TEM) images show that the mesoporous structure consists of nanocrystals of cZnS with a tight size distribution centered around the average diameter value (21 +/- 0 3) nm The analysis of the observed Election Paramagnetic Resonance (EPR) spectrum demonstrates the presence of the Mn2+ activating ions at isolated sites in the mesoporous material, resulting in three types of paramagnetic centers called Mn2+(I), Mn2+(II) and Mn2+(III) The EPR spectrum of the Mn2+(I) center, attributed to substitutional Mn2+ ions at Zn2+ cation sites in the ZnS nanocrystals, exhibits the smallest linewidth values reported so far, reflecting an increased lattice ordering The high quality of the nanocrystals forming the mesoporous cZnS Mn, as reflected in a tight nanocrystallites size distribution and reduced crystallites lattice disorder, is attributed to the restraining effect of the self-assembling

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.

Silicon wafers have been submitted to hydrogen RF-plasma treatment in various experimental conditions The hydrogen RF-plasma treatment on Si wafers induces two kinds of effects surface corrugation and formation of structural defects below the wafer surface The structural defects resulted after the plasma treatments have been investigated by conventional and high-resolution transmission electron microscopy (CTEM and HRTEM) techniques The specificity of the induced extended defects due to hydrogen decoration has been emphasized

This paper discusses the quantum confinement effects in nanometric structures that form low dimensional systems. In such systems, each surface/interface acts like a potential barrier, i.e. the wall of a quantum well, generating new energy levels. These levels are computed in a model that uses the approximation of the infinite rectangular quantum wells. The model is adapted for 2D, 1D and 0D systems, respectively. Different applications are discussed. The differences between the model results and the experimental data are proved to be of the same order of magnitude as the differences between the levels computed within the frame of infinite and finite quantum well approximations.

Electron paramagnetic resonance spectra from substitutional Mn2+ ions in quantum dots of cubic ZnS with tight size distribution centred at 2 nm were recorded in the 9.8 GHz and 34 GHz frequency bands. Their quantitative analysis with line shape simulation and fitting computer programs accounting for both forbidden transitions and line broadening effects demonstrate the presence of a local axial distortion attributed to a neighbouring extended planar stacking defect. The presence of such extended lattice defects, confirmed from a high resolution transmission electron microscopy study on presently investigated cubic ZnS quantum dots, seems to be essential in the incorporation and localization of Mn2+ activating ions in other cubic II-VI semiconductor quantum dots as well.

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.

The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced.