National Institute Of Materials Physics - Romania

Publications

860 articles found

711. Probing cellulose wettability by electron paramagnetic resonance

Authors: Ionita, G; Ghica, C; Ionita, P

Published: 2007, MATERIALS SCIENCE-POLAND, 25, 1017, DOI:

Carboxymethyl-cellu lose has been labelled with a stable free radical by reaction with 4-aminotempo in the presence of a coupling agent (EEDQ). The spin-labelled cellulose is highly stable, no leaking being noticed after months at room temperature. EPR spectroscopy was used as a main tool to study the wettability of such a material. The EPR spectrum of the dry spin-labelled cellulose shows the expected anisotropy, while addition of several solvents (acetone, ethyl acetate, DCM, methanol, toluene, PEG 200) induces the splitting of the spectrum into a two component system. Thus, the EPR spectrum is composed of a mobile component superimposed onto an immobilized one. Addition of water leads to a monocomponent isotropic spectrum. These data clearly indicate the presence of two types of sites to which the spin-label is attached. Variable temperature EPR spectra showed that an increase of temperature results in an increase in the mobility of the spin-label. Deposition of plain or spin-labelled gold nanoparticles on the cellulose fibres also affects the structure of the polymeric chain, as seen by changes in the EPR spectra.

712. Why the energy levels observed in electrical transport, phototransport and photoluminescence are different?

Authors: Ciurea, ML; Iancu, V

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI: 10.1109/SMICND.2007.4519643

The paper presents an analysis of the electrical transport, phototransport and photoluminescence measurements performed on silicon-based nanocrystalline systems. The experimental results are discussed within the frame of a quantum confinement model. It is proved that the differences between the energy levels identified in the measurements are related to the quantum selection rules specific to each process. It is also proved that, at nanometric scale, the nature of the atoms composing the nanocrystal represents a first order correction, while the size represents a zero order factor.

713. Quantum confinement model for phototransport processes in nanocrystalline porous silicon

Authors: Ciurea, ML; Stavarache, I; Iancu, V

Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, +, DOI:

The paper presents a quantum confinement model which describes the phototransport processes in nanocrystalline porous silicon. The model supposes that the nanocrystallites surface/interface acts as the walls of an infinite rectangular quantum well, introducing discrete confinement energy levels. This model is proved able to also describe the photoluminescence and the temperature dependence of the dark current in the same samples. Its results are in agreement with the Microstructure investigations.

714. Gas-sensing by Polymer-Iron nanocomposite materials

Authors: Tomescu, A; Simion, CE; Alexandrescu, R; Morjan, I; Scarisoreanu, M

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI:

Electrical properties of new Polymer-Iron nanocomposite materials obtained by laser pyrolysis were investigated, in order to find applications for the detection of reducing gases. The aim of this paper was to prove the necessity of complex experimental investigation in order to point out the contribution of different types of adsorption. Usually resistance measurement cannot fully describe the surface interactions. The electron affinity changes are of real interest for in-field conditions which always involve humidity of surrounding gas-atmosphere. On the other hand, the nanocomposite materials can be a solution for specific gas-sensing properties.

715. Triple-barrier resonant tunneling: A transfer matrix approach

Authors: Simion, CE; Ciucu, CI

Published: 2007, ROMANIAN REPORTS IN PHYSICS, 59, 817, DOI:

A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schrodinger equation under the application of a constant electric field and a uniform magnetic field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The results show good agreement with other existing models as well as with the bound-state energies. The solutions obtained are exact and can be generated easily by using MathCad. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

716. P-type ZnO thin films grown by RF plasma beam assisted Pulsed Laser Deposition

Authors: Epurescu, G; Dinescu, G; Moldovan, A; Birjega, R; Dipietrantonio, F; Verona, E; Verardi, P; Nistor, LC; Ghica, C; Van Tendeloo, G; Dinescu, A

Published: JUL-DEC 2007, SUPERLATTICES AND MICROSTRUCTURES, 42, 84, DOI: 10.1016/j.spmi.2007.04.072

The high exciton binding energy and band gap energy of ZnO thin films open the prospect of fabricating semiconductor lasers in the ultraviolet spectral range. A prerequisite for laser diode fabrication is highly p-doped ZnO which was not reproducibly obtained up to now. Without intentional doping ZnO exhibits n-type conduction. ZnO thin films have been obtained by radio-frequency assisted pulsed laser deposition. A metallic Zn target was used for ablation in an oxygen and nitrogen RF discharge. The electrical and morphological properties of the films grown on Si were studied by Atomic Force Microscopy (AFM), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), optical absorption and Hall Effect measurements for different ratios between the nitrogen and oxygen content. The AFM images of the as grown ZnO films reveal high quality surfaces with low values for the surface roughness and a sharp distribution of grains sizes as an effect of the RF discharge. The XRD patterns for all samples exhibit only (002) and (004) peaks indicating that the c-axis is always oriented normal to the substrate surface. The films present p-type conductivity with different carrier concentration and mobility depending on the nitrogen/oxygen ratio. (c) 2007 Elsevier Ltd. All rights reserved.

717. Mesoseopic ordering in the 0.9 Pb(Mg1/3Nb2/3)O-3-0.1 PbTiO3 relaxor ferroelectric: a HRTEM study

Authors: Nistor, LC; Ghica, C; Van Tendeloo, G

Published: 2007, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 3, 4, +, DOI: 10.1002/pssc.200673753

We report a microstructural and compositional study of a 90% Pb(Mg1/3Nb2/3)O-3 - 10% PbTiO3 ceramic sample. High resolution transmission electron microscopy (HRTEM) revealed the presence of compositional ordered nano-domains (1 - 4 mn), observable in two specific orientations, [0 (1) over bar 1] and [1 1 (2) over bar]. However, the visibility and the ordering degree of the nano-domains on the HRTEM images are not at all obvious. Fourier filtering of the images clearly revealed the ordered domains. Antiphase boundaries lying in the (111) planes separate them, while (100) and (111) facets separate the ordered domains from the disordered matrix. Their shape is plate-like, not uniformly spread in the disordered matrix. Their average size varies in different regions of the sample, most probably due to a non-uniform distribution of Ti, as observed by energy dispersive X-ray spectroscopy. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

718. Comparative characterization of PbS macro- and nano-crystalline photoresistive detectors

Authors: Iordache, G; Buda, M; Stancu, V; Botila, T

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 202, DOI: 10.1109/SMICND.2007.4519680

A comparative study of photodetector performance for nano- and micro-crystalline PbS thin layers is presented Both types of PbS films were obtained using the Chemical Bath Deposition method. To prepare nano-crystalline thin films we used a short reaction time with no doping Bi added At low levels of irradiance (0.1 mW/cm(2)) and room temperature (RT), the macro-crystalline PbS outperforms its nano-crystalline counterpart, by a factor of 6 for the value of Delta R/R-dark. However the nano-crystalline photodetectors show significantly lower optical quenching for large values of irradiance (approximate to 500 mW/cm(2)) at RT and better Delta R/R-dark performance at lower temperature, with an optimum temperature Of 150 K. The low frequency noise behavior is a superposition of 1/f flicker noise at low frequency and generation-recombination and thermal noise at higher frequency. The proportionaliiy factor between the 1/f noise and the DC dark current for the series resistor is 1.5 times larger for the nano-crystalline photodetector at room temperature.

719. Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon

Authors: Ciurea, ML; Iancu, V; Stavarache, I

Published: DEC 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, 2160, DOI:

The paper presents a quantum confinement model for the electrical transport, the phototransport and the photoluminescence phenomena in nanocrystalline silicon. The infinite rectangular quantum well was proved to be the best choice for the investigated systems - nanocrystalline porous silicon and silicon nanodots embedded in an amorphous silicon dioxide matrix. Previous microstructure investigations have shown that the nanocrystalline porous silicon is formed by a nanowire network, so that the electron Hamiltonian is the sum of a one-dimensional Bloch-like Hamiltonian and a two-dimensional infinite rectangular quantum well. In the case of the silicon nanodots, the quantum well is three-dimensional. In both cases, the quantum well introduces quantum confinement levels in the band gap, the investigated phenomena being related with transitions between these levels.

720. Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Authors: Ghica, C; Nistor, LC; Bender, H; Richard, O; Van Tendeloo, G; Ulyashin, A

Published: NOV 11 2006, PHILOSOPHICAL MAGAZINE, 86, 5151, DOI: 10.1080/14786430600801443

Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional ( TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with experimental images.