National Institute Of Materials Physics - Romania

The transport properties of nanocrystalline silicon films are presented. The studies were performed on fresh and stabilized nanocrystalline porous silicon (nc-PS) and on Si/SiO2 nanocomposite films. Current-voltage characteristics and the temperature dependence of the dark current were measured on both systems. From the current-voltage characteristics of the oxidized nc-PS, the Si-SiO2 potential barrier was determined (2.2 eV). The Si/SiO2 measurements proved that the main conduction mechanism for the nanodot systems is the field-assisted tunneling under Coulomb blockade. The quantum confinement was evidenced by the activation energies observed in the current-temperature characteristics and it was modeled by means of an infinite quantum well. The trapping-detrapping processes were studied by using the Optical Charging Spectroscopy (OCS) method: the traps are filled by illumination with a suitable wavelength at low temperature and the detrapping is produced by heating at a constant rate. The experimental investigations evidenced six trapping levels in nc-PS, four located at the surface/interface and two deep ones located in the bulk. The deepest level was observed only in oxidized samples. The modeling of the OCS trapping-detrapping processes allows for the determination of the characteristic parameters that cannot be directly obtained from the measurements.

The properties of the electron paramagnetic resonance spectra of Gd3+ ions in PbWO4 single crystals have been investigated in the X-band microwave frequency region, in the 1.5 to 290 K temperature range. The observed S-4 symmetry of the local crystal field at the Gd3+ impurity ions strongly suggests that the Gd3+ ions substitute for the Pb2+ lattice cations, with charge compensation at a distance. The spin Hamiltonian parameters are comparable with those of the Gd3+ ions in other isomorphous tungstates. The temperature variation of the fine structure parameters B-2(0) and B-4(0) points to an energy transfer between the impurity ions and the host lattice, which takes place mainly through a local vibrational mode of frequency omega = 3.1 x 1013 rad s(-1).

EPR and TEM investigations on sublimated solid Alq(3), [tris(8-hydroxyquinoline)aluminum(Ill)] are reported. Different paramagnetic centers in microcrystalline Alq3 fractions as synthesized and annealed are observed. Their nature, thermal treatment dependence, as well as correlation with the crystal structure are analyzed. The existence of randomly oriented triplets and quartets in annealed Alq3 fractions is evidenced from the temperature dependence of X- and Q-band EPR spectra. The spin Hamiltonian parameters are given and proposals for the model structures are made.

Unusual conductivity behavior, is observed in the semiconducting phase of granular manganites. It is characterized by, at a certain temperature, of a switching process between two activation energies. A core-shell model is developed to explain the presence of the conductivity of the two activation energies. The model suggests that inside the disordered thin outer layer the energy bands are split into isolated energy levels. Additional correlations between paramagnetic behavior and the existence of the two activation energies within the core-shell model are furnished by the ESR spectroscopic technique. (c) 2006 Published by Elsevier Ltd.

A microstructural investigation on polycrystalline electroluminescent Alq(3) obtained by train sublimation method is reported in the paper. The morphology and crystalline structure of the obtained Alq3 phases have been analyzed by transmission electron microscopy performed on samples collected from 3 different regions along the sublimation tube.

X- and Q-band electron paramagnetic resonance (EPR) investigation of different crystalline Alq(3) (tris(8-hydroxyquinoline)aluminium (III)) fractions formed by a train sublimation method are reported. Several paramagnetic defect centres corresponding to 1/2, 1, and 3/2 spin are observed at room temperature. Their intensity is dependent on the temperature, nature of the crystalline phase, and preparation conditions. Spectra simulation and analysis based on the spin Hamiltonian appropriate to a high spin system (S >=, 1) suggest the existence of randomly oriented triplets and quartets in annealed Alq(3) fractions. The crystalline Alq(3) phases responsible for the EPR powder spectra have been identified by transmission electron microscopy measurements performed on these sample fractions.

The modification of the polyester track membranes by treatment in radiofrequency plasma generated by capacitive coupled parallel plate discharge in air and ammonia was studied. The investigation of the surface properties (roughness, pore size distribution, contact angle) before and after the plasma treatments was performed. The treatment resulted in increase of the surface roughness and of the pores effective diameter and change of wettability. Membranes presenting lower or higher contact angles, as compared with the initial one can be obtained by selecting adequate values for the radiofrequency power and treatment time values. (c) 2005 Elsevier B.V. All rights reserved.

Quantum confinement effects in different kinds of nanocrystalline silicon systems are experimentally and theoretically investigated. Porous silicon structured as a nanowire network and silicon nanodots embedded in amorphous silicon dioxide are studied. The main quantum confinement effect in both cases is represented by the appearance of new energy levels in the silicon band gap. The corresponding energies can be experimentally determined from the current - temperature characteristics, which show an Arrhenius-like behavior. The curves present several activation energies between liquid nitrogen temperature and room temperature. The energy levels can be evaluated from a quantum well model. The fundamental level is located at the top of the valence band. The change of the activation energy is then related with the filling of the levels. The ratios of the consecutive activation energies in the current - temperature characteristics prove that the excitation undergoes the angular momentum conservation law imposed by the applied electric field. The estimation of the mean size of the nanocrystals from the values of the activation energies is in good agreement with the microstructure investigations performed on the samples. The confinement levels are also in good agreement with the photoluminescence measurements..

Indium-tin oxide (ITO) sol-gel films have been obtained with the void concentration up to 50%. The films are nanostructured with nanocrystals of In2O3:Sn and nanovoids. The information obtained from derivative thermo-gravimetry was used to design the annealing program for ITO film formation with a high void concentration. Multilayer films were obtained by successive deposition. The thickness of one layer was about 9 nm. By successive depositions, the void density of the film is reduced. Quantitative analysis of the void density has been performed by spectroscopic ellipsometry. The conductivity of the films can be varied in a large range by annealing in vacuum or in air, at temperature higher than 200 degrees C.

Piezoceramics with composition 0.46 Pb(Zr0.3Ti0.7)O-3 - 0.53 Pb(Ni1/3Nb2/3)O-3 have been synthesized by solid-state reaction at different temperatures. The density varied between 8.05-8.1 g/cm(3). The sintered samples have been chemically electroded with Ni and poled at 220C under an electric field of 3 kV/cm. The XRD spectra confirmed the formation of tetragonal crystalline phase with a tetragonal distortion c/a = 1.0125 which was decreased from a value of about 1.042 that corresponds to pure PZT with y = 0.3. Some minor traces of non-reacted precursor oxides such as Nb2O5 have been also found. TEM results confirmed the formation of tetragonal phase and revealed crystal grains with domains of different size, slightly disoriented from each other. Dielectric measurements performed between 20 degrees C and 300 degrees C at different frequencies between 100 Hz and 1 MHz revealed a broad dielectric anomaly at T-m = 118 degrees C (200Hz) which shifts to 127 degrees C at I MHz driving frequency. A dependence of T-m on sintering temperature has been observed. A thermal hysteresis is also found on heating and cooling. This shows that the samples present both relaxor and ferroelectric characteristics. High values of the dielectric constant are found both at room temperature (about 5000) and at T-m (about 18000). The dependence of dielectric and piezoelectric constants on sintering temperature has been found.