National Institute Of Materials Physics - Romania

Publications

847 articles found

771. Size distribution and optical properties of self-assembled Ge on Si

Authors: Vescan, L; Goryll, M; Stoica, T; Gartner, P; Grimm, K; Chretien, O; Mateeva, E; Dieker, C; Hollander, B

Published: OCT 2000, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 71, 432, DOI: 10.1007/s003390000555

The distribution of Ge islands is analysed in order to understand their optical behaviour. The Ce islands described in this paper were deposited by low-pressure chemical vapour deposition at relatively high temperature (700 degrees C), therefore the diffusion length of adatoms is high (similar to 100 mu m) and thus, not the limiting factor for nucleation. By changing the deposition time and the coverage, square-based pyramids, domes and relaxed domes are nucleated. Mainly domes emit light, the emission being in the wavelength range 1.38-1.55 mu m. When pyramids or relaxed domes are present, the photoluminescence broadens and decreases in intensity. The electroluminescence of vertically correlated islands increases with the number of layers, i.e. with the number of islands. The nucleation of islands on patterned (001) Si is changed when the deposition is performed on Si mesas with high index facets. The size distribution becomes narrower when the mesa size is decreased. An intermixing of up Bo 40% Si in the 2D layer was determined from photoluminescence data. PIN diodes fabricated on patterned wafers show an area-dependent electroluminecence related to a different microstructure of islands on large and small mesas. Finally, the lateral ordering on {hkl} facets is discussed.

772. Influence of the mesa size on Ge island electroluminescence properties

Authors: Chretien, O; Stoica, T; Dentel, D; Mateeva, E; Vescan, L

Published: SEP 2000, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15, 925, DOI: 10.1088/0268-1242/15/9/308

The influence of the mesa size on the structural and luminescence properties of Ge island layers deposited by low-pressure chemical vapour deposition was studied. Diode structures containing one Ge island layer were grown selectively on patterned wafers with variable area. The analysis shows that the electroluminescence spectra could be separated into three contributions lying at low-, medium and high-energy positions, respectively. The absolute peak intensity of each signal depends on the mesa size and on the injected current density. The signal at the low-energy position was assigned to an effect due to the facets of the diodes; the two other signals originate from islands on the (001) plane having different Si contents or strain states on the (001) plane.

773. Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H-2 flow rates

Authors: Nistor, SV; Stefan, M; Ralchenko, V; Khomich, AV; Schoemaker, D

Published: JUN 15 2000, JOURNAL OF APPLIED PHYSICS, 87, 8746, DOI: 10.1063/1.373604

The presence and concentration of nitrogen and hydrogen impurities in thick diamond films grown by microwave plasma chemical vapor deposition at various H-2 gas flow rates, keeping a constant [CH4]:[H-2]=2.5% concentration ratio, have been determined by electron spin resonance and optical absorption spectroscopy. The relative concentration of both impurities, present as paramagnetic atomic species with different relaxation properties, has been found by ESR measurements to decrease exponentially with the increase in the H-2 gas flow rate. Moreover, the resulting values were proportional to the content of substitutional nitrogen and CHx groups obtained from infrared and ultraviolet-visible optical absorption measurements, respectively. The decrease in the concentration of both impurities with an increase in the quality of the studied diamond films, early observed from high resolution electron microscopy studies on the same samples, strongly suggests that the incorporation of both impurities, as paramagnetic atomic species, is directly related to the concentration of the extended lattice defects. (C) 2000 American Institute of Physics. [S0021- 8979(00)08611-4].

774. Trapping levels in nanocrystalline porous silicon

Authors: Ciurea, ML; Draghici, M; Lazanu, S; Iancu, V; Nassiopoulou, A; Ioannou, V; Tsakiri, V

Published: MAY 22 2000, APPLIED PHYSICS LETTERS, 76, 3069, DOI: 10.1063/1.126581

Trapping levels in fresh (one month) and naturally aged (one year) nanocrystalline porous silicon have been investigated using the optical charging spectroscopy method. Four significant maxima and/or shoulders were observed for fresh samples and five for aged ones. They have been attributed to five and six trapping levels, respectively. The trapping centers corresponding to the most shallow four levels are situated at or nearby the internal surface of the porous silicon films. (C) 2000 American Institute of Physics. [S0003-6951(00)01621-1].

775. Electrical and photovoltaic properties of photosensitised ITO/a-Si : H p-i-n/TPyP/Au cells

Authors: Antohe, S; Ion, L; Tomozeiu, N; Stoica, T; Barna, E

Published: MAY 15 2000, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 62, 216, DOI: 10.1016/S0927-0248(99)00127-0

The a-Si:H p-i-n photovoltaic cells photosensitized with an organic layer of 5,10,15,20-tetra (4-pyrydil) 21H,23H porphine (TPyP) have been prepared. The action spectrum of these cells was extended by approximately 30 nm to longer wavelengths, with respect to non-sensitized cells. The presence of the organic layer gives some modifications in the electrical and photovoltaic behavior of the cells, that is why an analysis of dark current-voltage characteristics of the cells at room temperature, is also presented. (C) 2000 Elsevier Science B.V. All rights reserved.

776. Size distribution and electroluminescence of self-assembled Ge dots

Authors: Vescan, L; Stoica, T; Chretien, O; Goryll, M; Mateeva, E; Muck, A

Published: MAY 15 2000, JOURNAL OF APPLIED PHYSICS, 87, 7282, DOI: 10.1063/1.372980

In this article we study the electroluminescence of p-i-n diode structures with Ge dots consisting of coherent three-dimensional small (pyramids) and larger (dome) islands. The Ge dots are formed through strain-induced islanding. The diode structures, including one layer with Ge dots, were deposited on Si mesas with variable areas in order to study the influence of limited area deposition on self-assembling. It was observed that the reduction of deposited area improves island uniformity. The combined analysis of island distribution and electroluminescence spectra has lead to the conclusion that domes in small diodes have a smaller Si content or are less relaxed than domes in larger diodes. The diodes are found to emit up to room temperature near the optical communication wavelength of 1.3 microns. (C) 2000 American Institute of Physics. [S0021-8979(00)04610-7].

777. Electron-hole recombination in PbCl2 : T1 crystals

Authors: Nistor, SV; Stefan, M; Goovaerts, E; Schoemaker, D

Published: MAY 2000, JOURNAL OF LUMINESCENCE, 87-9, 551, DOI: 10.1016/S0022-2313(99)00287-2

A correlated ESR and optical emission study on samples doped with different concentrations of Tl+ impurity ions shows the involvement of paramagnetic Pb-2(3+) self-trapped electron centers (STEL) and trapped hole A centers in the electron-hole recombination responsible for the 2.6 eV blue-green luminescence. (C) 2000 Elsevier Science B.V. All rights reserved.

778. Structural investigation of a La0.6Y0.07Ca0.33MnO3 thin film by high resolution transmission electron microscopy

Authors: Ghica, C; Nistor, LC; Teodorescu, VS; Valeanu, M; Ristoscu, C; Mihailescu, IN; Deville, JP; Werckmann, J

Published: MAR 2000, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2, 72, DOI:

The morphology and structure of a La0.6Y0.07Ca0.33MnO3 thin film is studied by transmission electron microscopy. The film was grown by pulsed laser deposition (PLD) on an MgO-buffered silicon <100> wafer. The as-deposited films are polycrystalline and show a columnar morphology. We present a detailed high-resolution transmission electron microscopy structural study concerning a possible monoclinic distortion of the orthorhombic LYCMO crystal cell. (Received February 22, 2000; accepted March 10, 2000).

779. Structural comparison between La0.60Y0.07Ca0.33MnO3-delta bulk and pulsed laser deposited thin films

Authors: Teodorescu, VS; Nistor, LC; Valeanu, M; Ghica, C; Sandu, C; Mihailescu, IN; Ristoscu, C; Deville, JP; Werckmann, J

Published: MAR 2000, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 211, 60, DOI: 10.1016/S0304-8853(99)00713-1

This work is a comparative study of the structural and magneto-transport properties of La0.60Y0.07Ca0.33MnO3-delta (LYCMO) as bulk and thin film. The bulk samples were prepared by solid-state reaction between the corresponding metallic oxides mixed in stoichiometric ratios. The thin film was deposited by pulsed laser deposition on an MgO single crystal using an excimer laser. We show that the structure and stoichiometry of the bulk target are perfectly reproduced in the thin film. We measured the magnetoresistive effect on both the LYCMO pellet and the thin film by using the four-probe technique. The maximum of the MR effect is 680% on the polycrystalline thin film in a 2T magnetic field. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

780. Optical characterization of dielectric borophosphosilicate glass

Authors: Gartner, M; Modreanu, M; Bosch, S; Stoica, T

Published: APR-MAY 2000, MICROELECTRONICS RELIABILITY, 40, 620, DOI: 10.1016/S0026-2714(99)00291-7

Atmospheric pressure chemical vapour deposition films of borophosphosilicate glass with different contents of phosphorus and boron can be successfully used as masks for etching of silicon in KOH solution. The optical properties of these films were pointed out by spectroellipsometric measurements, using different theoretical models (such as Cauchy and Wemple-DiDomenico models). (C) 2000 Elsevier Science Ltd. All rights reserved.