National Institute Of Materials Physics - Romania

We have successfully applied laser annealing to sol-gel deposited SnO2:Sb thin films in order to achieve their crystallization. The as-deposited films are quasi-amorphous and electrically non-conductive. After laser annealing they crystallize and become conductive. This paper presents a comparative study of the laser annealed films and shows the influence of the irradiation parameters on the crystallization process and the electrical behavior of the films. Our results are quite promising in view of applying this kind of treatment to films deposited on thermally sensitive substrates (e.g. polymers). (C) 2002 Elsevier Science B.V. All rights reserved.

Calcium orthophosphates (CaP) and hydroxyapatite (HA) were intensively studied in order to design and develop a new generation of bioactive and osteoconductive bone prostheses. The main drawback now in the CaP and HA thin films processing persists in their poor mechanical characteristics, namely hardness, tensile and cohesive strength, and adherence to the metallic substrate. We report here a critical comparison between the microstructure and mechanical properties of HA and CaP thin films grown by two methods. The films were grown by KrF* pulsed laser deposition (PLD) or KrF* pulsed laser deposition assisted by in situ ultraviolet radiation emitted by a low pressure Hg lamp (UV-assisted PLD). The PLD films were deposited at room temperature, in vacuum on Ti-5Al-2.5Fe alloy substrate previously coated with a TiN buffer layer. After deposition the films were annealed in ambient air at 500-600 C. The UV-assisted PLD films were grown in (10(-2)-10(-1) Pa) oxygen directly on Ti-5Al-2.5Fe substrates heated at 500-600 degreesC. The films grown by classical PLD are crystalline and stoichiometric. The films grown by UV-assisted PLD were crystalline and exhibit the best mechanical characteristics with values of hardness and Young modulus of 6-7 and 150-170 GPa, respectively, which are unusually high for the calcium phosphate ceramics. To the difference of PLD films, in the case of UV-assisted PLD, the GIXRD spectra show the decomposition of HA in Ca2P2O7, Ca2P2O9 and CaO. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, increasing the tensile strength of the film, while the HA structure was destroyed. (C) 2002 Kluwer Academic Publishers.

Nanocrystalline silicon is studied with a view to obtaining a new photonic material. Non-equilibrium electronic processes in such materials play a significant role. We have studied trapping phenomena in nanocrystalline porous silicon and nanocrystalline silicon-based Multi-Quantum Wells structures by means of Optical Charging Spectroscopy method, which is a very good and sensitive method. We have also analyzed the modeling of the processes that occur during our measurements. This modeling allows us to separate the relative contribution of the different types of discharge currents that can appear: ohmic conduction currents of either equilibrium or non-equilibrium carriers, displacement currents, diffusion currents and tunneling currents through insulating layers (in Multi-Quantum Wells structures). It also allows us to increase the accuracy of the determination of the experimental trap parameters and to determine parameters that are not directly measurable. The model can be applied to other nanocrystalline semiconductors and can be easily generalized for other high resistivity materials.

Tl-0 (6 p(1)) irradiation centers are proposed as new paramagnetic probes for structural phase transition investigations. The P2(1)cn --> C1 c1 phase transition in Rb-2 ZnCl4 single crystals is monitored using the Tl-0 and the well-known Tl2+ (6 s(1)) paramagnetic probes. The anomalous temperature dependence exhibited by the EPR spectra of both types of centers in the C1 c1 phase was analyzed considering a soft mode contribution.

Pigments based on cadmium selenide sulphides and cadmium sulfides were analysed as regarding their structure and stability against the laser irradiation, a new technique for cleaning the painted surfaces in artwork restoration, The pulsed Nd:YAG laser radiation determines the effusion of some sulphur from the red pigment Cd(S,Se) and significant decrease of the average size of the crystallites. The color turns to dark red. For yellow pigment (CdS) no change of crystallite size was detected after laser irradiation.

It is presented a study of PbSe1-xTex thick films electrodeposition on glassy carbon and ITO electrodes in acid solutions (0.1M HNO3), using cyclic voltammetry and rotating-disk techniques. Electrochemical impedance spectroscopy study of PbSe1-xTex film in 0.1M HNO3 is reported.

We present a structural and morphological study on La0.6Y0.07Ca0.33MnO3-delta (LYCMO) thin films deposited by laser ablation onto MgO-buffered silicon wafers using two deposition configurations named on-axis and off-axis. All thin films have been deposited at high temperatures in an oxygen atmosphere. A comparative study between the on-axis and off-axis samples is performed by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. The films are polycrystalline and show a columnar morphology. The off-axis sample shows a better crystalline texture, although slight compositional variations have been found. (C) 2001 Elsevier Science Ltd. All rights reserved.

Trapping levels which govern the vertical transport in (nc-Si/CaF2)(n) multi-quantum wells were investigated using two different techniques: (a) the temperature dependence of the dark current and (b) the thermally stimulated depolarization current technique (TSDC). Measurements by the first technique showed that the conduction mechanism was thermally activated above 200 K with activation energies of 0.35-0.7 eV, These activation energies were found to increase with increasing electric field. TSDC measurements showed also the existence of at least one broad peak above 200 K with estimated activation energies in the range of 0.4-0.45 eV. Analysis of the peak by the fractional heating method showed a continuous distribution of defect states from 0.3 to 0.83 eV. (C) 2001 Elsevier Science B.V. All rights reserved.

An Fe+-type center with axial (001) symmetry has been studied by electron nuclear double resonance (ENDOR) in the microwave X and Q bands. The Fe+(I) center is produced only after irradiation with x or gamma rays at 80 K of SrCl2:Fe2+ crystals grown in a Cl-2 atmosphere. It has a 3d(7) F-4 Gamma (8) ground state with spin S =3/2. As shown by the correlated analysis of the ENDOR data and electron paramagnetic resonance superhyperfine structure, the Fe+ ion is situated in the center of a tetragonally compressed cube of eight nearest Cl- ions. The simplest model of the Fe+(I) center, compatible with the magnetic resonance results, consists of an interstitial Fe+ ion with two substitutional monovalent cations, very likely K+ ions, in two opposite nearest-neighbor Sr2+ sites along the tetragonal axis of the center.

A high-frequency (95 GHz) electron paramagnetic resonance (EPR) study is reported on single crystals of the planar tetranuclear complex Fe-4(OCH3)(6)(dpm)(6) (where Hdpm = dipivaloylmethane), which has been previously shown to present typical single-molecule magnet behavior. The spectra, all originating from the S = 5 ground state, possess quasi-axial symmetry along the normal to the plane defined by the four Fe(m) ions. The measured spectra are shown to belong to three different structural variations of the compound, resulting from disorder in the ligands around two of the Fe(III) ions. Accurate values could be obtained for the second- and fourth-order crystal field parameters related to the parallel EPR spectra, while the other parameters could be determined only for the dominant species. The separation between individual lines is decreasing and vanishing with increasing temperature. This effect is attributed to the contribution of fast relaxing excited states, whose population is varying with temperature.