National Institute Of Materials Physics - Romania
Publications
801. Electrical behaviour of fresh and stored porous silicon films
Published: JUL 18 1998, THIN SOLID FILMS, 325, 277, DOI: 10.1016/S0040-6090(98)00429-5
802. Characterization of carbon nitride thin films deposited by a combined RF and DC plasma beam
Published: JUL 18 1998, THIN SOLID FILMS, 325, 129, DOI: 10.1016/S0040-6090(98)00509-4
803. Electron and hole trapping in PbCl2 and PbCl2 : Tl crystals
Published: MAY 1998, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 141, 541, DOI: 10.1016/S0168-583X(98)00051-2
804. The molecular structure of some urea and thiourea derivatives
Published: APR 20 1998, JOURNAL OF MOLECULAR STRUCTURE, 446, 68, DOI: 10.1016/S0022-2860(97)00400-6
805. Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation
Published: MAR 15 1998, JOURNAL OF APPLIED PHYSICS, 83, 3373, DOI: 10.1063/1.367104
806. Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
Published: FEB 27 1998, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 51, 169, DOI: 10.1016/S0921-5107(97)00253-5
807. X-ray-absorption features from multielectron excitations above Xe L edges
Published: FEB 1998, PHYSICAL REVIEW A, 57, 878, DOI: 10.1103/PhysRevA.57.873
808. Theoretical model for carriers transport in nanocrystalline porous silicon films
Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 112, DOI:
809. Change of the optical properties of porous silicon by post anodization treatments
Published: 1998, CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 458, DOI:
810. On the photoluminescence decay in porous silicon films
Published: 1998, FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, 626, DOI: 10.1117/12.312818
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