National Institute Of Materials Physics - Romania

Electroluminescence of strained Si0.80Ge0.20Si(001) pin diodes has been investigated experimentally and by quantitative modeling. The key aspect of this investigation was that by selective epitaxial growth the experimental critical thickness for plastic relaxation (80 nm at T-epi=700 degrees C and large areas) could be increased in finite pads. SiGe layers with thickness of 60, 72 or 370 nm have been grown within the intrinsic i region of pin structures. Samples free of misfit dislocations revealed electroluminescence with the SiGe no-phonon peak and its transversal optical-phonon replica corresponding to interband transitions. It was found that by increasing the thickness of the SiGe layer the drop in the electroluminescence with increasing temperature could be shifted to higher temperature, so that for the 370 nm thick SiGe sample the emission was observed to persist still at 300 K. Modeling based on drift-diffusion and carrier recombination equations was used to simulate the current-voltage characteristics of the pin diodes and their band gap electroluminescence. It was found that the modeling results can account for the temperature and thickness dependence of the electroluminescence. Hole and electron Shockley-Read-Hall recombination times could be evaluated. (C) 1998 American Institute of Physics.

Two aspects of the selective epitaxial growth of Si and Si(1-x)Ge(x) will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dislocation density by reducing the area of the pads allows strained Si(1-x)Ge(x) layers to grow much thicker than the critical thickness. As an application for the latter the electroluminescence of forward biased PIN diodes with strained Si(0.80)Ge(0.20)/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thicker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence could explain the temperature and SiGe thickness dependence of the electroluminescence. (C) 1998 Elsevier Science S.A. All rights reserved.

The x-ray-absorption cross section above the L edges in xenon gas has been measured using synchrotron radiation. Multielectron excitation effects are investigated over a few hundred eV region from the Xe L-I, L-II, and L-III edges and the contributions from the effects of shake-up and shake-off to the photoabsorption spectrum are elucidated. Several multielectron excitation features were detected and analyzed by the theoretical energy of the shake-up process. Previous observations of the [2(s,p)5(s,p)] and [2(s,p)4d] transitions have been confirmed. [2(s,p)4p] transitions are clearly identified in the present study. It is very difficult to detect the [2s3s] multielectron transition with the sensitivity of similar to 2.0 x 10(-4) at the L edge jump. The [2s3d] edge was distinguished using the first derivative of the absorption curve. A new transition is found between [2(s,p)4p] and [2(s,p)4d] transitions and identified as a three-electron transition [2(s,p)4d5p]. Moreover, the difference in the behavior of the multielectron excitation as a function of x-ray energy among the L-I and L-II, or L-III edges is confirmed and investigated. [S1050-2947(98)01802-2].

A quantum confinement model is proposed to explain the carriers transport in a nanowire network of porous silicon. The electron Hamiltonian is written as the sum of the longitudinal and the transversal contributions. The last one corresponds to a two-dimensional infinite cylindrical quantum well, whose energy levels determine the activation energies observed in the temperature dependence of the dark current. The model is in excellent agreement with the experimental data.

Optical properties of as prepared porous silicon (PS) were compared with those of thermally treated and chemically cleaned samples. The change of the photoluminescence (PL) spectra correlated with ellipsometric. reflectance and Raman measurements leads us to conclude that the adsorbed species in the PS nanocrystalline structure play an important role in the origin of the PI emission, at least for as - anodized samples.

The photoluminescence (PL) decay measurements were performed on porous silicon films. It was observed that the two components of FL, one of them fast (ns) and the other slow (mu s or ms sometimes) have different contributions to PL signal, depending on the wavelength of the excitation light. The slow component of PL was in details investigated. Time decay cures for different excitation (337.1 nm, 470 nm and 550nm) and emission (550, 650, 700, 800 and 860 nm) wavelengths and also for different excitation intensities were taken. All decay curves were fitted with a stretched exponential. The slow component of PL was proposed to be attributed to the radiative recombination on surfaces.

The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric field, but on the effective symmetry of the rectangular-barrier profile, which approximates the real potential profile for the corresponding applied bias.

Electron spin resonance and optical studies reveal the presence of both Cu2+ and Cu+ centers in Rb2ZnCl4:Cu single crystals grown from melt and their conversion by X- or gamma-irradiation. Two types of paramagnetic Cu2+ centers with different concentrations and production properties have been identified. The more abundant Cu2+(I) center consists of a Cu2+ ion substituting for Zn2+ at the center of a ZnC42- tetrahedron. The less abundant Cu2+(II) center seems to be situated at a Rb site. Production experiments strongly suggest that during the crystal growth copper enters the Rb2ZnCl4 lattice as Cu2+, mainly at Zn2+ sites, part of it being afterwards converted to Cu+ precursor centers. The presence of a neighboring-charge compensating anion vacancy and its departure during the radiolytic Cu+(I) --> Cu2+(I) conversion seems to play an essential role in the stabilization of the Cu+(I) and Cu2+(I) centers, respectively.

The temperature dependence of the conductivity (between 15 and 300 K) and optical transmission spectra (between 0.8-3.5 mu m) have been measured on r.f.-sputtered Si100-xNix with 0 less than or equal to x less than or equal to 15. The films were characterized by Rutherford backscattering spectroscopy and X-ray diffraction. Changes in the optical sub-bandgap structure, with corresponding changes in the conduction mechanism take place by varying the Ni content. The films are amorphous, showing a main broad diffraction peak. Its position deviates, for this concentrationrange, from 2(kF) (k(F) = Fermi radius), the alloy losing the Hume-Rothery character present for 50 less than or equal to x less than or equal to 60.

The electrical transport of stabilised porous silicon layers was investigated. The samples were stored in ambient for 1,5-2 years, A MIS-like C-V characteristic, a strong rectifying I-V curve and I-T dependence with two activation energies were obtained, Thermally stimulated depolarization currents have an activation energy of 0.81-0.87 eV. The electrical properties are discussed in the frame of a quantum confinement model, keeping into account the surface component.