National Institute Of Materials Physics - Romania

Publications

860 articles found

841. LINE-SHAPE MODEL FOR THE BROAD PHOTOLUMINESCENCE BAND FROM SI1-XGEX/SI HETEROSTRUCTURES

Authors: HARTMANN, A; VESCAN, L; DIEKER, C; STOICA, T; LUTH, H

Published: DEC 15 1993, PHYSICAL REVIEW B, 48, 18279, DOI: 10.1103/PhysRevB.48.18276

Photoluminescence studies on Si1-xGex layers exceeding the critical thickness show not only dislocation-related peaks D1,...,D4, but also in addition a broad band (T band), centered at similar to 110 meV below the strained alloy band gap. Depth profiling studies show that the T band is due to centers in the Si1-xGex. The excitation power dependence and high quantum efficiency of the T band can be explained by assuming that it is due to an isoelectronically trapped exciton. T-band line shapes were fitted by a model based on statistical fluctuations of the Ge content and their effect on the local gap energy.

842. MEYER-NELDEL CORRELATION IN SEMICONDUCTORS AND MOTT MINIMUM METALLIC CONDUCTIVITY

Authors: POPESCU, C; STOICA, T

Published: DEC 15 1992, PHYSICAL REVIEW B, 46, 15071, DOI: 10.1103/PhysRevB.46.15063

The paper outlines conditions under which the statistical shift of the Fermi level within the density-of-states (DOS) distribution may result in the Meyer-Neldel correlation. Sufficient conditions have been found: (i) The DOS should have, around the Fermi level, two competing exponential slopes; (ii) The temperature range for the statistical shift should correspond to kT values higher than at least one of these two characteristic energies associated with the slopes. Under such conditions, the Fermi level is no longer the dominant energy for carrier-concentration changes. Relating the Mayer-Neldel correlation to DOS parameters is an essential step in a correct deduction of Mott's minimum-metallic-conductivity value from experiment.

843. TRANSFORMATIONS OF AMINIC ANTIOXIDANTS IN THE INHIBITED OXIDATION OF HYDROCARBONS

Authors: NEGOITA, N; HERDAN, JM; GRECU, N; IORDACHE, G

Published: FEB 1988, REVUE ROUMAINE DE CHIMIE, 33, 194, DOI:

844. GD AMORPHOUS-SILICON OBTAINED FROM TRICHLORSILANE

Authors: POPESCU, C; STOICA, T; DRAGOMIR, A; NENCIU, A; NICOLAE, M; IVAN, P; IONESCU, S

Published: DEC 1987, JOURNAL OF NON-CRYSTALLINE SOLIDS, 97-8, 1434, DOI: 10.1016/0022-3093(87)90343-7

845. AN EQUATION FOR THE CURRENT VOLTAGE CURVE OF THE A-SI-H SOLAR-CELLS

Authors: POPESCU, C; STOICA, T; SAVANE, AG

Published: JUN 16 1987, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 101, 477, DOI: 10.1002/pssa.2211010219

846. EVALUATION OF THE OPTICAL-CONSTANTS AND THICKNESSES OF WEAKLY ABSORBING NONUNIFORM THIN-FILMS

Authors: GRIGOROVICI, R; STOICA, T; VANCU, A

Published: 1982, THIN SOLID FILMS, 97, 185, DOI: 10.1016/0040-6090(82)90226-7

847. PHOTOCONDUCTIVITY AND PHOTO-VOLTAIC EFFECTS IN SPUTTERED CDTE THIN-FILMS

Authors: CIUREA, ML; BOTILA, T

Published: 1981, REVUE ROUMAINE DE PHYSIQUE, 26, 973, DOI:

848. LIGHT-INDUCED-CHANGES IN A-SI-H ANALYZED BY FIELD-EFFECT MEASUREMENTS

Authors: STOICA, T

Published: 1981, JOURNAL DE PHYSIQUE, 42, 410, DOI: 10.1051/jphyscol:1981488

849. TRAPS IN POLYCRYSTALLINE CDTE THIN-FILMS

Authors: CIUREA, ML; BOTILA, T

Published: 1980, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 61, 491, DOI: 10.1002/pssa.2210610220

850. BULK BOUNDARY-CONDITIONS FOR INJECTION AND EXTRACTION IN TRAP-FREE LIFETIME AND RELAXATION SEMICONDUCTORS

Authors: STOICA, T; POPESCU, C

Published: 1978, PHYSICAL REVIEW B, 17, 3983, DOI: 10.1103/PhysRevB.17.3972