National Institute Of Materials Physics - Romania

Nanoscale Condensed Matter Laboratory

Publications

Year:

794 articles found

1. Quantum dot exciton dephasing by Coulomb interaction: A fermionic analog of the independent boson model

Authors: Dinu, IV; Tolea, M; Gartner, P

Published: FEB 18 2020, DOI: 10.1103/PhysRevB.101.085304

Abstract: The time evolution of a quantum dot exciton in Coulomb interaction with wetting layer carriers is treated using an approach similar to the independent boson model. The role of the polaronic unitary transform is played by the scattering matrix, for which a diagrammatic, linked cluster expansion is available Similarities and differences to the independent boson model are discussed. A numerical example is presented.

2. Controlling Single Molecule Conductance by a Locally Induced Chemical Reaction on Individual Thiophene Units

Authors: Michnowicz, T; Borca, B; Petuya, R; Schendel, V; Pristl, M; Pentegov, I; Kraft, U; Klauk, H; Wahl, P; Mutombo, P; Jelinek, P; Arnau, A; Schlickum, U; Kern, K

Published: , DOI: 10.1002/anie.201915200

Abstract: Among the prerequisites for the progress of single-molecule-based electronic devices are a better understanding of the electronic properties at the individual molecular level and the development of methods to tune the charge transport through molecular junctions. Scanning tunneling microscopy (STM) is an ideal tool not only for the characterization, but also for the manipulation of single atoms and molecules on surfaces. The conductance through a single molecule can be measured by contacting the molecule with atomic precision and forming a molecular bridge between the metallic STM tip electrode and the metallic surface electrode. The parameters affecting the conductance are mainly related to their electronic structure and to the coupling to the metallic electrodes. Here, the experimental and theoretical analyses are focused on single tetracenothiophene molecules and demonstrate that an in situ-induced direct desulfurization reaction of the thiophene moiety strongly improves the molecular anchoring by forming covalent bonds between molecular carbon and copper surface atoms. This bond formation leads to an increase of the conductance by about 50 % compared to the initial state.

3. Crown-ether functionalized graphene oxide for metal ions sequestration

Authors: Petrescu, S; Avramescu, S; Musuc, AM; Neatu, F; Florea, M; Ionita, P

Published: FEB 2020, DOI: 10.1016/j.materresbull.2019.110643

Abstract: Graphene oxide has been synthesized, additionally derivatized with chloroacetic acid for increase the number of available carboxylic groups and further functionalized with crown-ether moieties. The thus obtained material was characterized by IR, thermal analysis, SEM, Raman, and XPS. Tests on adsorption of several metal cations showed that cooper and iron are more retained than potassium.

4. The interplay of work function and polarization state at the Schottky barriers height for Cu/BaTiO3 interface

Authors: Popescu, DG; Husanu, MA; Chirila, C; Pintilie, L; Teodorescu, CM

Published: FEB 1 2020, DOI: 10.1016/j.apsusc.2019.144101

Abstract: The emerging field of electronics based on ferro-functional materials relies on driving effectively and predictably a ferroelectric system between different polarization states through bias applied to metallic contacts. This requires detailed understanding of the growth mechanisms and electronic properties of the interface, including ferroelectric and material - dependent band alignment and Schottky barrier heights. Whether the major contribution at the interface band alignment comes from the work function difference or from the ferroelectric state is still under debate. Here, using X-ray photoemsion and ab-initio calculations, we derive the complex microscopic picture of metal/ferroelectric interface formation, including growth mechanism, valence alteration, ferroelectric-dependent electrostatic potential and thickness - dependent compensation mechanisms of ferroelectricity, starting from the ultrathin growth of Cu up to 100 angstrom on BaTiO3. One establishes the evolution of the band bending and of the build-in potential from the initial probed thickness of the ferroelectric in the range of 3 lambda (lambda - the inelastic mean free path) while gradually approaching the contact region with the metal at higher thickness of the top layer. We find that the well-defined orientation of the ferroelectric polarization lead to a band bending at the interface, which add at the bending expected from the work function difference of the two joining materials.

5. Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp(2) layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum

Authors: Apostol, NG; Lizzit, D; Lungu, GA; Lacovig, P; Chirila, CF; Pintilie, L; Lizzit, S; Teodorescu, CM

Published: JAN 8 2020, DOI: 10.1039/c9ra09131a

Abstract: Carbon layers are deposited on 100 nm thick atomically clean (001) lead zirconate titanate (PZT) in ultrahigh vacuum, ruling out the presence of any contaminants. X-ray photoelectron spectroscopy is used to assess the substrate surface or interface composition, substrate polarization and the thickness of carbon layers, which ranges from less than one monolayer (1 ML) of graphene to several monolayers. Atomically clean PZT(001) exhibit inwards polarization, and this polarization reverses the sign upon carbon deposition. Cationic vacancies are detected near the PZT surface, consistent with heavy p doping of these films near the surface. The carbon layers exhibited a consistent proportion of atoms forming in-plane sp(2) bonds, as detected by near-edge absorption fine structure (NEXAFS) analysis and confirmed partially by scanning tunneling microscopy (STM). In situ poling with simultaneous in-plane transport measurements revealed the presence of resistance anti-hysteresis versus the polarization orientation for films with less than 1 ML carbon amount, evolving towards 'normal' hysteresis for thicker carbon films. The anti-hysteresis is explained in terms of a mixed screening mechanism, involving charge carriers from the sp(2) carbon layers together with holes or ionized acceptors in PZT(001) near the interface. For thicker films, the compensation mechanism becomes extrinsic, involving mostly electrons and holes from carbon, yielding the expected hysteresis.

6. Core-shell nanowire arrays based on ZnO and CuxO for water stable photocatalysts

Authors: Florica, C; Costas, A; Preda, N; Beregoi, M; Kuncser, A; Apostol, N; Popa, C; Socol, G; Diculescu, V; Enculescu, I

Published: NOV 21 2019, DOI: 10.1038/s41598-019-53873-0

Abstract: Staggered gap radial heterojunctions based on ZnO-CuxO core-shell nanowires are used as water stable photocatalysts to harvest solar energy for pollutants removal. ZnO nanowires with a wurtzite crystalline structure and a band gap of approximately 3.3 eV are obtained by thermal oxidation in air. These are covered with an amorphous CuxO layer having a band gap of 1.74 eV and subsequently form core-shell heterojunctions. The electrical characterization of the ZnO pristine and ZnO-CuxO core-shell nanowires emphasizes the charge transfer phenomena at the junction and at the interface between the nanowires and water based solutions. The methylene blue degradation mechanism is discussed taking into consideration the dissolution of ZnO in water based solutions for ZnO nanowires and ZnO-CuxO core-shell nanowires with different shell thicknesses. An optimum thickness of the CuxO layer is used to obtain water stable photocatalysts, where the ZnO-CuxO radial heterojunction enhances the separation and transport of the photogenerated charge carriers when irradiating with UV-light, leading to swift pollutant degradation.

7. Electronic Structure of a Graphene-like Artificial Crystal of NdNiO3

Authors: Arab, A; Liu, XR; Koksal, O; Yang, WB; Chandrasena, RU; Middey, S; Kareev, M; Kumar, S; Husanu, MA; Yang, ZZ; Gu, L; Strocov, VN; Lee, TL; Minar, J; Pentcheva, R; Chakhalian, J; Gray, AX

Published: NOV 2019, DOI: 10.1021/acs.nanolett.9b03962

Abstract: Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes with typical information depths of a few angstroms. Here, we use a combination of bulk-sensitive soft X-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard X-ray photoelectron spectroscopy (HAXPES), and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO3 confined between two 4-unit cell-thick layers of insulating LaAlO3. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

8. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation

Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Maraloiu, AV; Negrila, C; Logofatu, C; Stoica, T; Teodorescu, VS; Ciurea, ML; Lazanu, S

Published: NOV 1 2019, DOI: 10.1088/1361-6528/ab352b

Abstract: Trilayer memory capacitors of control HfO2/floating gate of Ge nanoparticles in HfO2/tunnel HfO2/Si substrate deposited by magnetron sputtering and subsequently annealed are investigated for the first time for applications in radiation dosimetry. In the floating gate (FG), amorphous Ge nanoparticles (NPs) are arranged in two rows inside the HfO2 matrix. The HfO2 matrix is formed of orthorhombic/tetragonal nanocrystals (NCs). The adjacent thin films to the FG are also formed of orthorhombic/tetragonal HfO2 NCs. This phase is formed during annealing, in samples with thick control HfO2, in the presence of Ge, being induced by the stress. In the rest of the control oxide, HfO2 NCs are monoclinic. Orthorhombic HfO2 has ferroelectric properties and therefore enhances the memory window produced by charge storage in Ge NPs to above 6 V. The high sensitivity of 0.8 mV Gy(-1) to a particle irradiation from a Am-241 source was measured by monitoring the flatband potential during radiation exposure after electrical writing of the memory.

9. Electronic phase separation at LaAlO3/SrTiO3 interfaces tunable by oxygen deficiency

Authors: Strocov, VN; Chikina, A; Caputo, M; Husanu, MA; Bisti, F; Bracher, D; Schmitt, T; Granozio, FM; Vaz, CAF; Lechermann, F

Published: OCT 7 2019, DOI: 10.1103/PhysRevMaterials.3.106001

Abstract: Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-x-ray energy range, where the enhanced probing depth combined with resonant photoexcitation allow us access to fundamental electronic structure characteristics - momentum-resolved spectral function, dispersions and ordering of energy bands, Fermi surface - of buried interfaces. Our experiment uses x-ray irradiation of the LAO/STO interface to tune its oxygen deficiency, building up a dichotomic system where mobile weakly correlated Ti t(2g) electrons coexist with localized strongly correlated Ti e(g) ones. The ARPES spectra dynamics under x-ray irradiation shows a gradual intensity increase under constant Luttinger count of the Fermi surface. This fact identifies electronic phase separation (EPS) where the mobile electrons accumulate in conducting puddles with fixed electronic structure embedded in an insulating host phase, and allows us to estimate the lateral fraction of these puddles. We discuss the physics of EPS invoking a theoretical picture of oxygen-vacancy clustering, promoted by the magnetism of the localized Ti e(g) electrons, and repelling of the mobile t(2g) electrons from these clusters. Our results on the irradiation-tuned EPS elucidate the intrinsic one taking place at the stoichiometric LAO/STO interfaces.

10. k-resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES

Authors: Strocov, VN; Lev, LL; Kobayashi, M; Cancellieri, C; Husanu, MA; Chikina, A; Schroter, NBM; Wang, X; Krieger, JA; Salman, Z

Published: OCT 2019, DOI: 10.1016/j.elspec.2019.06.009

Abstract: Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k. Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the heart of current and future electronics. These applications are illustrated here with a few pioneering results, including buried quantum-well states in semiconductor and oxide heterostructures, their bosonic coupling critically affecting electron transport, magnetic impurities in diluted magnetic semiconductors and topological materials, etc. High photon flux and detection efficiency are crucial for pushing the SX-ARPES experiment to these most photon-hungry cases.