National Institute Of Materials Physics - Romania

Publications

articles found
1. Climbing the anisotropy barrier of single-molecule magnets with spin-vibron interaction
Authors: Moldoveanu, V; Dragomir, R

Published: JUL 20 2023, PHYSICAL REVIEW B, 108, 024416, DOI: 10.1103/PhysRevB.108.024416

Using the master equation approach, we look for fingerprints of the interaction between the localized spin S of a nanomagnet coupled to spin-polarized leads and its quantized vibrational modes. We find that the stationary and transient currents are sensitive to vibron-assisted transitions of the molecular spin on both sides of the anisotropy barrier. Such transitions are associated with vibron-dressed states and triggered under resonant conditions. Transport calculations are presented for two antiparallel configurations of the spin-polarized electrodes. In the first configuration, and far from a resonance point, a blockade is imposed on both the electronic and molecular spins via their exchange interaction. When sweeping the magnetic field through resonance, the spin-vibron interaction removes this blockade and allows the indirect reading of resonant transitions as the molecular spin climbs the left side of the anisotropy barrier. In the second configuration, the anisotropy barrier is overcome but the vibron-assisted transitions on the right side of the anisotropy barrier "delocalize" the molecular spin and do not allow the complete current-induced magnetic switching -S & RARR; S. In both configurations, the stationary current increases on resonance, due to additional transport channels triggered by the spin-vibron coupling. Therefore, the switching of the spin-vibron coupling could be detected in future transport experiments.
2. Multiparticle quantum walk: A dynamical probe of topological many-body excitations
Authors: Ostahie, B; Sticlet, D; Moca, CP; Dóra, B; Werner, MA; Asboth, JK; Zaránd, G

Published: JUL 13 2023, PHYSICAL REVIEW B, 108, 035126, DOI: 10.1103/PhysRevB.108.035126

Recent experiments demonstrated that single-particle quantum walks can reveal the topological properties of single-particle states. Here, we generalize this picture to the many-body realm by focusing on multiparticle quantum walks of strongly interacting fermions. After injecting N particles with multiple flavors in the interacting SU(N) Su-Schrieffer-Heeger chain, their multiparticle continuous-time quantum walk is monitored by a variety of methods. We find that the many-body Berry phase in the N-body part of the spectrum signals a topological transition upon varying the dimerization, similarly to the single-particle case. This topological transition is captured by the single- and many-body mean chiral displacement during the quantum walk and remains present for strong interaction as well as for moderate disorder. Our predictions are well within experimental reach for cold atomic gases and can be used to detect the topological properties of many-body excitations through dynamical probes.
3. Kinetics and the Effect of Thermal Treatments on the Martensitic Transformation and Magnetic Properties in Ni49Mn32Ga19 Ferromagnetic Shape Memory Ribbons
Authors: Tolea, F; Popescu, B; Bartha, C; Enculescu, M; Tolea, M; Sofronie, M

Published: JAN 2023, MAGNETOCHEMISTRY, 9, 7, DOI: 10.3390/magnetochemistry9010007

In our work, the kinetics of martensitic transformations and the influence of thermal treatments on martensitic transformations, as well as the related magnetic properties of the Ni49Mn32Ga19 ferromagnetic shape memory melt-spun ribbons, have been investigated. Thermal treatments at 673 K for 1, 4 and 8 h can be considered an instrument for fine-tuning the performance parameters of alloys. One-hour thermal treatments promote an improvement in the crystallinity of these otherwise highly textured ribbons, reducing internal defects and stress induced by the melt-spinning technique. Longer thermal treatments induce an important magnetization rise concomitantly with a slight and continuous increase in martensitic temperatures and transformation enthalpy. The activation energy, evaluated from differential scanning calorimeter experimental data with a Friedman model, significantly increases after thermal treatments as a result of the multi-phase coexistence and stabilization of the non-modulated martensitic phase, which increases the reverse martensitic transformation hindrance.
4. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films
Authors: Boni, AG; Chirila, C; Trupina, L; Radu, C; Filip, LD; Moldoveanu, V; Pintilie, I; Pintilie, L

Published: 2023 JAN 25 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497

The p-n junctions are the building blocks of nowadays electronic devices. The n- or p-type conductivity is obtained in classic semiconductors, like Si, by doping with atoms acting as donors or acceptors, respectively. Doping was used in ferroelectrics to influence the transition temperature, magnitude of some physical properties, but not necessarily conduction type. Therefore, comprehensive studies to obtain true ferroelectric p-n junctions by controlled doping are missing. Recently, it has been shown that Pb(Zr0.2Ti0.8)O-3 films doped with & AP;1% atomic Nb (n-type doping) or Fe (p-type doping) have different orientations of polarization in the as-grown state. Knowing that polarization orientation depends on doping type, the next step is to build ferroelectric p-n homojunctions and to study their properties in relation to ferroelectric polarization. p-n and n-p structures were grown for this purpose by successive deposition of Nb-doped and Fe-doped Pb(Zr,Ti)O-3 layers with different thicknesses. We find that these p-n homojunctions are ferroelectric, but the magnitude of the polarization and coercive field, as well as the dominant polarization orientation in the as-grown state, depend on the conduction type of the first grown layer. The I-V characteristics are quasi-linear, although the interfaces with the electrodes behaves as Schottky contacts. The resistance extracted from the I-V characteristics displays an exponential dependence on temperature, with an activation energy in the range of 0.14-0.17 eV. These results are explained assuming that the total current in the junction is the total of electron and hole injections at the electrode interfaces. It is shown that for relatively low doping concentrations, the current density contains a dominant term with a linear voltage dependence and an exponential temperature dependence, as observed experimentally, and a secondary (correction) term that is dependent on the free carrier density and can induce non-linear voltage dependence when this density is significant.
5. Kinetics and the Effect of Thermal Treatments on the Martensitic Transformation and Magnetic Properties in Ni49Mn32Ga19 Ferromagnetic Shape Memory Ribbons
Authors: Tolea, F; Popescu, B; Bartha, C; Enculescu, M; Tolea, M; Sofronie, M

Published: JAN 2023, MAGNETOCHEMISTRY, 9, 7, DOI: 10.3390/magnetochemistry9010007

In our work, the kinetics of martensitic transformations and the influence of thermal treatments on martensitic transformations, as well as the related magnetic properties of the Ni49Mn32Ga19 ferromagnetic shape memory melt-spun ribbons, have been investigated. Thermal treatments at 673 K for 1, 4 and 8 h can be considered an instrument for fine-tuning the performance parameters of alloys. One-hour thermal treatments promote an improvement in the crystallinity of these otherwise highly textured ribbons, reducing internal defects and stress induced by the melt-spinning technique. Longer thermal treatments induce an important magnetization rise concomitantly with a slight and continuous increase in martensitic temperatures and transformation enthalpy. The activation energy, evaluated from differential scanning calorimeter experimental data with a Friedman model, significantly increases after thermal treatments as a result of the multi-phase coexistence and stabilization of the non-modulated martensitic phase, which increases the reverse martensitic transformation hindrance.
6. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films
Authors: Boni, AG; Chirila, C; Trupina, L; Radu, C; Filip, LD; Moldoveanu, V; Pintilie, I; Pintilie, L

Published: 2023 JAN 25 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497

The p-n junctions are the building blocks of nowadays electronic devices. The n- or p-type conductivity is obtained in classic semiconductors, like Si, by doping with atoms acting as donors or acceptors, respectively. Doping was used in ferroelectrics to influence the transition temperature, magnitude of some physical properties, but not necessarily conduction type. Therefore, comprehensive studies to obtain true ferroelectric p-n junctions by controlled doping are missing. Recently, it has been shown that Pb(Zr0.2Ti0.8)O-3 films doped with & AP;1% atomic Nb (n-type doping) or Fe (p-type doping) have different orientations of polarization in the as-grown state. Knowing that polarization orientation depends on doping type, the next step is to build ferroelectric p-n homojunctions and to study their properties in relation to ferroelectric polarization. p-n and n-p structures were grown for this purpose by successive deposition of Nb-doped and Fe-doped Pb(Zr,Ti)O-3 layers with different thicknesses. We find that these p-n homojunctions are ferroelectric, but the magnitude of the polarization and coercive field, as well as the dominant polarization orientation in the as-grown state, depend on the conduction type of the first grown layer. The I-V characteristics are quasi-linear, although the interfaces with the electrodes behaves as Schottky contacts. The resistance extracted from the I-V characteristics displays an exponential dependence on temperature, with an activation energy in the range of 0.14-0.17 eV. These results are explained assuming that the total current in the junction is the total of electron and hole injections at the electrode interfaces. It is shown that for relatively low doping concentrations, the current density contains a dominant term with a linear voltage dependence and an exponential temperature dependence, as observed experimentally, and a secondary (correction) term that is dependent on the free carrier density and can induce non-linear voltage dependence when this density is significant.
7. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films
Authors: Boni, AG; Chirila, C; Trupina, L; Radu, C; Filip, LD; Moldoveanu, V; Pintilie, I; Pintilie, L

Published: JAN 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497

The p-n junctions are the building blocks of nowadays electronic devices. The n- or p-type conductivity is obtained in classic semiconductors, like Si, by doping with atoms acting as donors or acceptors, respectively. Doping was used in ferroelectrics to influence the transition temperature, magnitude of some physical properties, but not necessarily conduction type. Therefore, comprehensive studies to obtain true ferroelectric p-n junctions by controlled doping are missing. Recently, it has been shown that Pb(Zr0.2Ti0.8)O-3 films doped with & AP;1% atomic Nb (n-type doping) or Fe (p-type doping) have different orientations of polarization in the as-grown state. Knowing that polarization orientation depends on doping type, the next step is to build ferroelectric p-n homojunctions and to study their properties in relation to ferroelectric polarization. p-n and n-p structures were grown for this purpose by successive deposition of Nb-doped and Fe-doped Pb(Zr,Ti)O-3 layers with different thicknesses. We find that these p-n homojunctions are ferroelectric, but the magnitude of the polarization and coercive field, as well as the dominant polarization orientation in the as-grown state, depend on the conduction type of the first grown layer. The I-V characteristics are quasi-linear, although the interfaces with the electrodes behaves as Schottky contacts. The resistance extracted from the I-V characteristics displays an exponential dependence on temperature, with an activation energy in the range of 0.14-0.17 eV. These results are explained assuming that the total current in the junction is the total of electron and hole injections at the electrode interfaces. It is shown that for relatively low doping concentrations, the current density contains a dominant term with a linear voltage dependence and an exponential temperature dependence, as observed experimentally, and a secondary (correction) term that is dependent on the free carrier density and can induce non-linear voltage dependence when this density is significant.
8. Antimicrobial Properties of TiO2 Microparticles Coated with Ca- and Cu-Based Composite Layers
Authors: Bucuresteanu, R; Ionita, M; Chihaia, V; Ficai, A; Trusca, RD; Ilie, CI; Kuncser, A; Holban, AM; Mihaescu, G; Petcu, G; Nicolaev, A; Costescu, RM; Husch, M; Parvulescu, V; Ditu, LM

Published: JUL 2022, INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, 23, 6888, DOI: 10.3390/ijms23136888

The ability of TiO2 to generate reactive oxygen species under UV radiation makes it an efficient candidate in antimicrobial studies. In this context, the preparation of TiO2 microparticles coated with Ca- and Cu-based composite layers over which Cu(II), Cu(I), and Cu(0) species were identified is presented here. The obtained materials were characterized by a wide range of analytical methods, such as X-ray diffraction, electron microscopy (TEM, SEM), X-ray photoelectron (XPS), and UV-VIS spectroscopy. The antimicrobial efficiency was evaluated using qualitative and quantitative standard methods and standard clinical microbial strains. A significant aspect of this composite is that the antimicrobial properties were evidenced both in the presence and absence of the light, as result of competition between photo and electrical effects. However, the antibacterial effect was similar in darkness and light for all samples. Because no photocatalytic properties were found in the absence of copper, the results sustain the antibacterial effect of the electric field (generated by the electrostatic potential of the composite layer) both under the dark and in light conditions. In this way, the composite layers supported on the TiO2 microparticles' surface can offer continuous antibacterial protection and do not require the presence of a permanent light source for activation. However, the antimicrobial effect in the dark is more significant and is considered to be the result of the electric field effect generated on the composite layer.
9. Interface effects on the energy spectrum and quantum transport in two-dimensional topological heterostructures
Authors: Ostahie, B; Aldea, A

Published: JUN 15 2022, APPLIED SURFACE SCIENCE, 587, 152769, DOI: 10.1016/j.apsusc.2022.152769

We theoretically investigate the spectral and quantum transport properties of two-dimensional heterostructures build up of different topological materials. Surprising behavior arises due to particular tuning of the edge states, provided by internal symmetries or an external magnetic field, in the different constituents of the heterostructure. Specifically, we use the Chern-type topological insulator and the Weyl semimetals with one or two interfaces interposed between these systems. The energy spectrum may contain gaps which exhibit edge states of alternating chirality or, on the contrary, of a given chirality everywhere in the spectrum. Then, the calculation predicts that the quantum Hall effect may lack the negative plateaus or show asymmetric plateaus in the lower and upper part of the spectrum. Also, the channel distribution on the finite size system with interfaces and attached leads may give rise to fractional values of the quantum Hall resistance. The calculations are based on a diatomic lattice model, with hopping to the nearest-and next-nearest-neighbors, exposed to an internal periodic flux (of Haldane-type), and also to an external magnetic field.
10. Unified approach to cyclotron and plasmon resonances in a periodic two-dimensional GaAs electron gas hosting the Hofstadter butterfly
Authors: Gudmundsson, V; Mughnetsyan, V; Abdullah, NR; Tang, CS; Moldoveanu, V; Manolescu, A

Published: APR 7 2022, PHYSICAL REVIEW B, 105, 155302, DOI: 10.1103/PhysRevB.105.155302

We present theoretical calculations for the cyclotron resonance and various magnetoplasmon modes of a Coulomb interacting two-dimensional GaAs electron gas (2DEG) modulated as a lateral superlattice of quantum dots subjected to an external perpendicular constant magnetic field. We use a real-time excitation approach based on the Liouville???von Neumann equation for the density operator, that can go beyond linear response delivering information of all longitudinal and transverse collective modes of interest to the same order. We perform an extensive analysis of the coexisting collective modes due to the lateral confinement and the magnetic field for a different number of electrons in each dot. In the limit of vanishing dot modulation of the 2DEG we find signs of the structure of the Hofstadter butterfly in the excitation spectra.

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