National Institute Of Materials Physics - Romania

The compositions in the ternary chalcogenide systems from the demarcation region between the glass-formation domain (GFD) and the partially or fully crystalline formation domain seem to exhibit outstanding properties. We have shown in this paper that the compositions with the best memory-switching properties are situated at the border of the GFD in many systems. One can use this correlation to find new phase-change materials with better switching properties or to discover GFDs that were not observed yet. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

The complex chalcogenides with excellent memory switching properties are mainly situated close to the border of glass formation domain. The simulation of the structural changes occurring during the memory switching process of a ternary chalcogenide composition has been carried out. The transition of a high resistivity GeAs4Te7 amorphous cluster with 120 atoms to a low resistivity crystalline cluster was analyzed. The coordination of atoms changes from that corresponding to 8-N coordination rule (two for tellurium, three for arsenic, and four for germanium) in the amorphous phase to six (the same for all atoms) in metastable crystalline phase. Because of spatial constraints exercised by the amorphous matrix, the amorphous cluster cannot expand. In these circumstances Te atoms seem to be over-coordinated (up to sixfold-coordinated). During the switching process, the atoms are moving on distances up to 4.0 angstrom. The average displacement is of 2.36 angstrom.

Organic heterostructures were fabricated by matrix assisted pulsed laser evaporation (MAPLE) method using arylenevinylene oligomers based on triphenylamine (P78)/carbazole (P13) group and tris(8-hydroxyquinolinato)aluminum salt (Alq3). Optical properties of the organic multilayer structures were characterized by spectroscopic techniques: FTIR, UV-vis and photoluminescence (PL). A good transparency (over 60%) was remarked for the structures with two organic layers in the 550-800 nm range. Photoluminescence (PL) spectra proved that the emission characteristics of the materials have been preserved. I-V characteristics of (ITO/oligomer/Alq3/Al and ITO/Alq3/Al) heterostructures were symmetrically while rectifying properties of these heterostructures have not been observed. A comparison between the heterostructures made of layers with different thickness reveals that the higher current (8 x 10(-6) A at 1 V) was obtained for the ITO/P78/Alq3/Al heterostructure, which is characterized by a larger thickness of the double organic layer. AFM measurements revealed a similar topography while RMS values of the reported structures depend on the organic material. (C) 2013 Elsevier B.V. All rights reserved.

This paper presents some studies about the bi-layer organic heterostructures realized with zinc phthalocyanine (ZnPc) as donor layer and 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA) as acceptor layer, on substrate of glass covered by Al doped ZnO (AZO) layer. These heterostructures have been prepared using laser techniques: pulsed laser deposition (PLD) in an atmosphere of oxygen for AZO films deposition and matrix assisted pulsed laser evaporation (MAPLE) for organic films deposition. The influence of the deposition conditions on the transmission of the organic films has been analysed. The effect of the oxygen plasma treatment, with duration of 5 min and 10 min, on the surface topography, structural and optical properties of AZO layers deposited by PLD and, as consequence, on the optical and electrical properties of the single layer (ZnPc) and bi-layer (ZnPc/NTCDA) organic heterostructure, deposited by MAPLE, was investigated. (C) 2014 Elsevier B.V. All rights reserved.

In this work we have investigated the electrochemical processes by which Pt nanoparticles were included in (Bi,Sb)(2)Te-3 films and submicrometer wires. Solutions containing ions of Bi3+, HTeO2+ and Sb3+ as well as Pt nanoparticles or [PtCl6](2-) ions were used for this study. For comparison, a solution with the same composition in Bi3+, HTeO2+ and Sb3+ ions was used to study the electrodeposition process of (Bi,Sb)(2)Te-3 films and submicrometer wires. Linear and cyclic voltammetry was employed in experiments to find the influences of addition to electrodeposition bath of Pt nanoparticles or [PtCl6](2-) ions on deposition process of (Bi,Sb)(2)Te-3 film. Pt-(Bi,Sb)(2)Te-3 nanocomposites has been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectrometry (EDX) to determine structural, morphological and compositional properties. Two mechanisms for Pt nanoparticles embedding in (Bi,Sb)(2)Te-3 films and wires have been proposed. (c) 2014 Elsevier Ltd. All rights reserved.

Surface-enhanced Raman scattering studies were performed using nonresonant (514.5 nm) and resonant (676.4 nm) optical excitations on single-walled carbon nanotubes thoroughly separated into semiconducting (pure 99%) and metallic (pure 98%) components. Regardless of the support (Au or Ag), the metallic nanotubes do not present an anomalous anti-Stokes Raman emission. Regardless of whether an on-resonant or off-resonant optical excitation is used, only the semiconducting nanotubes produce an abnormal anti-Stokes Raman emission that grows when increasing the excitation light intensity or temperature. The Raman studies under light polarized relative to the main nanotube axis demonstrate that only semiconducting nanotubes are sensitive toward changes in the polarization of the excitation light. Copyright (c) 2014 John Wiley & Sons, Ltd.

By performing comparative Raman studies on nanometric thin films (9.5, 39, 88 and 185 nm) of copper phthalocyanine (CuPc) deposited on glass, Au and Ag supports, we demonstrate that the mechanism of the surface-enhanced Raman scattering (SERS) generated on Au and Ag substrates differs in the Stokes and anti-Stokes Raman branches depending on whether non-resonant (515.5 nm) or resonant (647.1 nm) optical excitation is applied. The evaluation of the SERS effect via the I-aS/I-S ratio reveals that this ratio is smaller or larger than that predicted by the Boltzmann law for non-resonant or resonant optical excitation, respectively. In the former case, the enhancement of the Stokes Raman emission is similar to a stimulated Raman process resulting from the plasmon coupling associated with the incident excitation light and spontaneous Stokes Raman emission. For the latter case, the amplification of the anti-Stokes Raman emission results from a wave-mixing process reminiscent of a single-beam CARS effect.

Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FUR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity. (C) 2013 Elsevier B.V. All rights reserved.

Sol-gel route using metal alkoxides precursor and trifluoroacetic acid as in situ fluorination reagent has been used to prepare Eu3+ -doped silicate xerogel, followed by thermal annealing to obtain oxyfluoride glass ceramic containing Eu3+ -doped BaF2 nanocrystals. We have used Eu3+ as probe ion and we analyzed its characteristic features (photoluminescence, optical absorption and magnetic circular dichroism) to get information about the local environment around the ion during thermally activated evolution of the sol to xerogel and then glass ceramic. As the drying and annealing proceeds silica network is formed accompanied by precipitation of the nanofluoride crystalline phase; Eu3+ coordination changes gradually from a random and assymetric CF3COO- one (in the sol) to a symmetric one (in the BaF2 nanocrystals) given by the fluorine ions. Glass ceramization is based on a homogenous crystallization mechanism with BaF2 nucleation centres resulted from thermal decomposition of Ba-trifluoacetate at around 300 degrees C followed by subsequent growth into BaF2 nanocrystals above 600 degrees C; Eu3+-ions are incorporated during the nanocrystals growth. (C) 2013 Elsevier B.V. All rights reserved.

KrF* excimer laser pulses of 248 nm were used for the synthesis of nanometric iron oxide films with variable thickness, stoichiometry and electrical properties. Film deposition was carried out on <1 0 0> Si and SiO2 substrates. The number of laser pulses was increased from 4000 to 6000, while ambient reactive oxygen pressure varied from 0.1 to 1.0 Pa. The film thickness depends on oxygen pressure, number of laser pulses and substrate nature. All films demonstrated semiconducting temperature behaviour with variable band gap (E-g) depending on oxygen pressure, substrate nature and temperature. Eg value was less than 1.0 eV for all deposited films. XRD analysis evidenced that films deposited on Si substrate have polycrystalline structure, while films deposited on SiO2 were amorphous. The higher oxygen pressure, the lower crystallinity of the deposited film was observed, resulting in change of thermo electromotive force coefficient (S) value. For larger substrate temperature, a better crystallization was observed in the deposited films, resulting in increased S coefficient value. The largest value of the S coefficient was about 8.7 mV/K in the range 290-295 K and it decreased to 1.0-1.6 mV/K when heating temperature changed from 240 to 330 K. The figure of merit of deposited structures was ZT = 3-6 in the range 240-330 K with a maximum of 12 at 300-304 K. We have shown that thermo-sensing characteristics of the films strongly depend on their electrical and structural properties. (C) 2013 Elsevier Ltd. All rights reserved.