National Institute Of Materials Physics - Romania

A new composite material was synthesized via the electrochemical oxidation of 2,2'-bithiophene (BTh) and pyrene (Py) monomers dissolved in a solution of LiC1O(4) in CH3CN onto a working electrode of Au coated with a film of single-walled carbon nanotubes (SWNTs). The interaction of the poly(2,2'-bithiophene-co-pyrene) (PBTh-Py) with the SWNTs and the orientation of the copolymer on the working electrode were studied by anti-Stokes and Stokes Raman scattering and FTIR spectroscopy in the grazing-incidence angle reflection geometry. The Raman lines at 1464 and 1435 cm(-1), attributed to the symmetric stretching modes of the C=C bond in the quinoid and aromatic rings of the PBTh-Py copolymer, were observed when the working electrode is either a blank Au film or a Au support coated with a SWNT film. In the latter case, charge transfer occurs at the interface of the two constituents. This charge transfer leads to functionalization of the carbon nanotubes with the copolymer molecules. The presence of enhanced anti-Stokes Raman lines at -1461, -1435 and -1187 cm(-1) indicates a resonant optical excitation process of the PBTh-Py/SWNT composite. The FTIR spectra acquired under polarized light for the PBTh-Py copolymer electrosynthesized on a bare Au support reveal significant changes in the absorption bands situated in the spectral ranges of 1000-1150 and 1550-1650 cm(-1) that originate in the surface-enhanced IR absorption (SEIRA) processes. The functionalization of the SWNTs with the PBTh-Py copolymer is evidenced by the enhancement of the absorption of the FTIR bands at 793 and 846 cm(-1), which are assigned to the C S C deformation vibrational mode and the substituted benzene ring, respectively, due to the effects of steric hindrance that are induced for the copolymer molecules by the binding of carbon nanotubes. (C) 2014 Elsevier B.V. All rights reserved.

Thin films of C layers were deposited by radiofrequency magnetron sputtering on silicon substrates using three gaseous atmospheres: pure Ar, Ar + H-2 and Ar + D-2 mixtures. Scanning Electron Microscopy investigations showed that addition of D-2 or H-2 to main sputtering gas (Ar) leads to the enhancement of the deposition rate while the layer morphology remained columnar. Fourier Transform Infrared Spectroscopy measurements revealed the presence of D-C or H-C chemical bonds in the samples. Ion beam analysis measurements performed by simultaneous recording of the recoiled H and D ions, and of backscattered He-4 confirmed the incorporation of hydrogen and deuterium in the deposited carbon thin films. (C) 2014 Elsevier B.V. All rights reserved.

The cathodic deposition of zinc oxide film on Pt from an aqueous solution containing 0.05 M Zn(NO3)(2) was investigated using linear sweep voltammetry and electrochemical impedance spectroscopy. The film formation is an electroprecipitation process due to reduction of nitrate ion on the surface of working electrode in the presence of Zn2+ ions. A morphology of ZnO with hexagonal platelets was observed. The standard electromotive force of the cell reaction was calculated for both NO3/NO2 process and overall deposition process. Linear voltammograms and visual observations showed that polarizing the electrode at higher negative potentials than -1.1 V, the parallel reduction of zinc ion to zinc metal occurs together with reduction of nitrate ion to hydroxide ion; as a consequence, a partial amorphous state of ZnO film was recorded on SEM micrographs. Experimental impedance data and data calculated by fitting with an equivalent circuit showed that the ZnO formation involves an adsorption of complexed zinc ions on Pt electrode, before the charge transfer.

The compositions in the ternary chalcogenide systems from the demarcation region between the glass-formation domain (GFD) and the partially or fully crystalline formation domain seem to exhibit outstanding properties. We have shown in this paper that the compositions with the best memory-switching properties are situated at the border of the GFD in many systems. One can use this correlation to find new phase-change materials with better switching properties or to discover GFDs that were not observed yet. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

The complex chalcogenides with excellent memory switching properties are mainly situated close to the border of glass formation domain. The simulation of the structural changes occurring during the memory switching process of a ternary chalcogenide composition has been carried out. The transition of a high resistivity GeAs4Te7 amorphous cluster with 120 atoms to a low resistivity crystalline cluster was analyzed. The coordination of atoms changes from that corresponding to 8-N coordination rule (two for tellurium, three for arsenic, and four for germanium) in the amorphous phase to six (the same for all atoms) in metastable crystalline phase. Because of spatial constraints exercised by the amorphous matrix, the amorphous cluster cannot expand. In these circumstances Te atoms seem to be over-coordinated (up to sixfold-coordinated). During the switching process, the atoms are moving on distances up to 4.0 angstrom. The average displacement is of 2.36 angstrom.

Organic heterostructures were fabricated by matrix assisted pulsed laser evaporation (MAPLE) method using arylenevinylene oligomers based on triphenylamine (P78)/carbazole (P13) group and tris(8-hydroxyquinolinato)aluminum salt (Alq3). Optical properties of the organic multilayer structures were characterized by spectroscopic techniques: FTIR, UV-vis and photoluminescence (PL). A good transparency (over 60%) was remarked for the structures with two organic layers in the 550-800 nm range. Photoluminescence (PL) spectra proved that the emission characteristics of the materials have been preserved. I-V characteristics of (ITO/oligomer/Alq3/Al and ITO/Alq3/Al) heterostructures were symmetrically while rectifying properties of these heterostructures have not been observed. A comparison between the heterostructures made of layers with different thickness reveals that the higher current (8 x 10(-6) A at 1 V) was obtained for the ITO/P78/Alq3/Al heterostructure, which is characterized by a larger thickness of the double organic layer. AFM measurements revealed a similar topography while RMS values of the reported structures depend on the organic material. (C) 2013 Elsevier B.V. All rights reserved.

This paper presents some studies about the bi-layer organic heterostructures realized with zinc phthalocyanine (ZnPc) as donor layer and 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA) as acceptor layer, on substrate of glass covered by Al doped ZnO (AZO) layer. These heterostructures have been prepared using laser techniques: pulsed laser deposition (PLD) in an atmosphere of oxygen for AZO films deposition and matrix assisted pulsed laser evaporation (MAPLE) for organic films deposition. The influence of the deposition conditions on the transmission of the organic films has been analysed. The effect of the oxygen plasma treatment, with duration of 5 min and 10 min, on the surface topography, structural and optical properties of AZO layers deposited by PLD and, as consequence, on the optical and electrical properties of the single layer (ZnPc) and bi-layer (ZnPc/NTCDA) organic heterostructure, deposited by MAPLE, was investigated. (C) 2014 Elsevier B.V. All rights reserved.

In this work we have investigated the electrochemical processes by which Pt nanoparticles were included in (Bi,Sb)(2)Te-3 films and submicrometer wires. Solutions containing ions of Bi3+, HTeO2+ and Sb3+ as well as Pt nanoparticles or [PtCl6](2-) ions were used for this study. For comparison, a solution with the same composition in Bi3+, HTeO2+ and Sb3+ ions was used to study the electrodeposition process of (Bi,Sb)(2)Te-3 films and submicrometer wires. Linear and cyclic voltammetry was employed in experiments to find the influences of addition to electrodeposition bath of Pt nanoparticles or [PtCl6](2-) ions on deposition process of (Bi,Sb)(2)Te-3 film. Pt-(Bi,Sb)(2)Te-3 nanocomposites has been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectrometry (EDX) to determine structural, morphological and compositional properties. Two mechanisms for Pt nanoparticles embedding in (Bi,Sb)(2)Te-3 films and wires have been proposed. (c) 2014 Elsevier Ltd. All rights reserved.

Surface-enhanced Raman scattering studies were performed using nonresonant (514.5 nm) and resonant (676.4 nm) optical excitations on single-walled carbon nanotubes thoroughly separated into semiconducting (pure 99%) and metallic (pure 98%) components. Regardless of the support (Au or Ag), the metallic nanotubes do not present an anomalous anti-Stokes Raman emission. Regardless of whether an on-resonant or off-resonant optical excitation is used, only the semiconducting nanotubes produce an abnormal anti-Stokes Raman emission that grows when increasing the excitation light intensity or temperature. The Raman studies under light polarized relative to the main nanotube axis demonstrate that only semiconducting nanotubes are sensitive toward changes in the polarization of the excitation light. Copyright (c) 2014 John Wiley & Sons, Ltd.

By performing comparative Raman studies on nanometric thin films (9.5, 39, 88 and 185 nm) of copper phthalocyanine (CuPc) deposited on glass, Au and Ag supports, we demonstrate that the mechanism of the surface-enhanced Raman scattering (SERS) generated on Au and Ag substrates differs in the Stokes and anti-Stokes Raman branches depending on whether non-resonant (515.5 nm) or resonant (647.1 nm) optical excitation is applied. The evaluation of the SERS effect via the I-aS/I-S ratio reveals that this ratio is smaller or larger than that predicted by the Boltzmann law for non-resonant or resonant optical excitation, respectively. In the former case, the enhancement of the Stokes Raman emission is similar to a stimulated Raman process resulting from the plasmon coupling associated with the incident excitation light and spontaneous Stokes Raman emission. For the latter case, the amplification of the anti-Stokes Raman emission results from a wave-mixing process reminiscent of a single-beam CARS effect.