National Institute Of Materials Physics - Romania

Publications

861 articles found

531. TAILORING OF OPTICAL, COMPOSITIONAL AND ELECTRICAL PROPERTIES OF THE InxZn1-xO THIN FILMS OBTAINED BY COMBINATORIAL PULSED LASER DEPOSITION

Authors: Socol, G; Galca, AC; Luculescu, CR; Stanculescu, A; Socol, M; Stefan, N; Axente, E; Duta, L; Mihailescu, CM; Craciun, V; Craciun, D; Sava, V; Mihailescu, IN

Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 115, DOI:

Indium Zinc Oxide compositional libraries were fabricated by combinatorial pulsed laser deposition technique on glass substrate at room temperature. Two pairs of targets with In atomic concentrations, In/(In+Zn), of 28 at.% and 56 at.% or 42 at.% and 70 at.% were employed. A high transparency was observed for all the coatings with transmittance values better than 95%. The maximum thicknesses of the samples, inferred by spectroscopic ellipsometry, were within the 174-310 nm range for the simple PLD films, whereas in case of combinatorial PLD coatings were 341 or 467 nm. Energy dispersive X-ray spectroscopy revealed that In content in the combinatorial films was in the 27-52 at. % range. From atomic force microscopy histograms we evidenced a decrease of the RMS roughness down to 1 nm with the increase of the In content. As a result of the compositional library studies two minimum values of the electrical resistivity were identified at 2.3x10(-3) Omega.cm and 8.6 x 10(-4) Omega.cm, which correspond to 28.8-29.5 at.% and 44-49 at% range of Indium content.

532. NON-LINEAR BEHAVIOUR IN SILVER - ARSENIC SULFIDE SYSTEM

Authors: Popescu, M; Lorinczi, A; Gherendi, F; Nistor, M; Velea, A; Simandan, ID; Sava, F

Published: NOV-DEC 2011, JOURNAL OF OVONIC RESEARCH, 7, 133, DOI:

Non-linear phenomena have been observed in the Ag(paint)-As2S3 system. This behaviour is useful in rectifier devices and in dynamical switching devices based on chalcogenides.

533. Study of electrodeposition of (Bi,Sb)(2)Te-3 nanowires by voltammetric methods and electrochemical impedance spectroscopy

Authors: Sima, M; Vasile, E; Sima, M

Published: NOV-DEC 2011, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 13, 1602, DOI:

Nanostructured thermoelectric semiconductors are a promising material to convert waste heat to electricity for energy regeneration due to improvement of Seebeck coefficient and thermal conductivity reducing. Among various thermoelectric materials, bismuth telluride based alloys are the most used in the fabrication of TE devices. The processes associated with the electrodeposition of (Bi,Sb)(2)Te-3 nanowires and films are reported along with an analysis of the composition, morphology and structure of resulting materials. Electrochemical behavior was examined using cyclic and linear voltammetry and electrochemical impedance spectroscopy techniques.

534. OPTICALLY INDUCED BIREFRINGENCE OF A p-AMINOAZOBENZENE-EPDXY RESIN DERIVATIVE

Authors: Beica, T; Zgura, I; Frunza, L; Ganea, P; Frunza, S; Dumitrache, L; Raditoiu, V; Wagner, L

Published: 2011, ROMANIAN REPORTS IN PHYSICS, 63, 752, DOI:

A derivative of p-aminoazobenzene-epoxy resin was studied. Visually examination between crossed polarizers does not show birefringence but it can be optically induced. Changing the polarization direction of the irradiating light leads to the changing of the privileged direction of the induced birefringence. The birefringence value was evaluated and compared with liquid crystals as anisotropic compounds.

535. LIQUID CRYSTAL/COPOLYMER-CLAY NANOSTRUCTURED SYSTEMS: CONTRIBUTION TO THE CONDUCTIVITY OF THE ELECTRODE POLARIZATION

Authors: Ganea, CP; Manaila-Maximean, D

Published: 2011, UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN-SERIES A-APPLIED MATHEMATICS AND PHYSICS, 73, 216, DOI:

The electrical conductivity of new nanocomposite systems liquid-ctystal/montmorillonite clay is performed using impedance spectroscopy. The dependence of the electrical conductivity on the frequency, temperature and bias voltage is obtained. The results referring to the alternative voltage influence allow getting more information on the conduction mechanism than the previous ones obtained under frequency and temperature influence. An important role has the polarization at the electrode-sample interface, both in continuous and alternative current. The electrode polarization effect on the electrical conductivity in dependence on the above mentioned parameters is also examined.

536. ELECTRICAL PROPERTIES OF (Zn,Cu)O:Mn SUBMICRON WIRES

Authors: Ion, L; Antohe, S; Sima, A; Sima, M

Published: OCT-DEC 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 1700, DOI:

Arrays of multisegment Pd/(Zn,Cu)O:Mn/Pd submicron wires have been grown electrochemically into the pores of nuclear track polycarbonate membranes. Their transport properties were investigated, by measuring current-voltage (I-V) characteristics in a temperature range from 300 K down to 40 K. I-V characteristics of Pd/(Zn,Cu)O:Mn/Pd wires exhibited a symmetric, non-linear shape on applied bias voltage ranging from -20 V to +20V. The ohmic region corresponds to polarization voltage under 3.5V. Comparatively, I-V characteristics of Pd/ZnO/Pd array of wires with diameter about 500 nm are linear in the entire range of applied voltages (-20 V to +20V).

537. Photoluminescence of poly (N vinylcarbazole)/carbon nanotubes composites

Authors: Gontia, II; Baibarac, M; Baltog, I

Published: MAY-JUN 2011, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 13, 582, DOI:

The photoluminescence (PL) of two types of poly (N-vinyl-carbazole)(PVK)/carbon nanotubes (CN) composites, prepared by chemical and electrochemical method, has been investigated. In comparison with the pure PVK, the chemically prepared PVK/NC sample shows a significant PL quenching and a shorter decay time. For the samples prepared electrochemically, PL increases in intensity, red shifts and gets longer decay time with the increase of voltammetric cycles number. In addition, the latter shows a change in emission from high-energy excimer to low-energy excimer after a treatment with NH(4)OH.

538. DEPENDENCE OF OPTICAL RESPONSE ON pH OF A WATER-SOLUBLE Zn(II)-METALLOPORPHYRIN

Authors: Fagadar-Cosma, E; Creanga, I; Maranescu, B; Palade, A; Lorinczi, A; Fagadar-Cosma, G; Popescu, M

Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 80, DOI:

Nowadays, porphyrin derivatives are extensively used as analytical reagents. This work put the basis for a rapid, simple and inexpensive method developed for pH determination. It was demonstrated the potential for a water soluble metalloporphyrin, 5,10,15,20-tetrakis(N-methyl-4-pyridyl) porphyrin-Zn(II) tetrachloride (Zn-TNMPyP) to be a potential optical pH sensor in the 5.5-10.5 domain. Monitoring of the variations in the absorption spectra of the Zn-TNMPyP, both regarding the Soret and the Q(0,1) band, generated by the exposure to different base concentrations allowed us to notice the linearity of the response at different pH values.

539. Influence of defects on the switching speed of Ge2Sb2Te5

Authors: Velea, A; Popescu, M; Lorinczi, A; Sava, F; Simandan, ID; Mihai, C

Published: NOV-DEC 2011, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 13, 1596, DOI:

Chalcogenide phase change materials are one of the major contenders for the new non-volatile memory applications. Here is reported that the switching speed of Ge2Sb2Te5 is strongly dependent on the percent of defects in the material. Using cellular automata simulations it was shown that the size of the percolation cluster is minimum, thus the switching speed is maximum, for a percent of around 25% defects in the material. This is a property of the Ge2Sb2Te5 that can be useful for new phase change materials and devices design with better switching properties.

540. Skin Layer Defects in Si by Optimized Treatment in Hydrogen RF Plasma

Authors: Ghica, C; Nistor, LC; Vizireanu, S; Dinescu, G; Moldovan, A; Dinescu, M

Published: DEC 20 2010, PLASMA PROCESSES AND POLYMERS, 7, 991, DOI: 10.1002/ppap.201000066

The first step of the smartcut (TM) process consists in inducing structural defects below the free surface of a silicon wafer, usually by implantation of light elements, such as hydrogen or helium. An alternative way to induce subsurface defects is by plasma treatment. In this work, we present a morphological and structural study on silicon wafers submitted to hydrogen plasma treatment, using two plasma-processing geometries. The parameters of the plasma treatment have been varied in order to limit the surface roughness and to confine the induced defects in a narrow region (50 nm) below the wafer surface. The morphological and structural investigations have been performed by AFM and TEM.