National Institute Of Materials Physics - Romania
Publications
531. MAPLE preparation and characterization of benzil thin films
Published: NOV 2010, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4, 1806, DOI:
532. STRUCTURAL DETAILS OF THE Ag-As2S3 INTERFACE OBTAINED BY VACUUM THERMAL EVAPORATION FOLLOWED BY GREEN LASER IRRADIATION
533. MOULDING PROCEDURE FOR THE PREPARATION OF INFRARED GLASSY MICROLENSES AND PRISMS BASED ON ARSENIC SULPHIDE CHALCOGENIDE GLASS
534. Investigations of the neodymium doped quartz glasses obtained by the hybrid sot-gel method
Published: OCT 2010, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4, 1623, DOI:
535. Structure and Mossbauer measurements on SnSe2 bulk and thin films
Published: OCT 2010, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4, 1571, DOI:
536. Optical and structural studies on Ba(Mg1/3Ta2/3)O-3 thin films obtained by radiofrequency assisted pulsed plasma deposition
Published: SEP 1 2010, APPLIED SURFACE SCIENCE, 256, 6530, DOI: 10.1016/j.apsusc.2010.04.041
537. A new ZnO photoanode for dye-sensitized solar cell
Published: SEP 2010, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4, 1328, DOI:
538. Growth and optical characterization of Pb-, TI-doped LiF crystals
Published: AUG 2010, OPTICAL MATERIALS, 32, 1312, DOI: 10.1016/j.optmat.2010.04.038
539. Langmuir and Langmuir-Blodgett films based on stearic acid, barium stearate and carbon nanotubes
Published: AUG 2010, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 4, 1181, DOI:
540. Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I-2
Published: AUG 2010, CRYSTAL RESEARCH AND TECHNOLOGY, 45, 799, DOI: 10.1002/crat.201000059
Copyright © 2025 National Institute of Materials Physics. All Rights Reserved