National Institute Of Materials Physics - Romania

Silicon wafers have been submitted to hydrogen RF-plasma treatment in various experimental conditions. Hydrogen RF-plasma treatment induced two kinds of effects on Si wafers, depending on the treatment conditions: surface corrugation and formation of structural defects below the free surface. Atomic force microscopy (AFM) investigations showed that the surface roughness significantly increased with the treatment duration, leading to the formation of pyramidal humps on the surface. The structural defects resulting after the plasma treatments were investigated by conventional and high-resolution transmission electron microscopy (CTEM and HRTEM) techniques. The specificity of the induced extended defects due to hydrogen decoration was emphasized. Three types of extended defects were identified and characterized: planar defects in the {111} and {100} planes and nanometric voids. Point defects related to the hydrogenation process were investigated by electron paramagnetic resonance (EPR) in correlation with the electron microscopy results.

Amorphous thin films of SnSe2 and Ge2Sb2Te5 doped by different amount of silver (0.1, 0.2, 0.5 and 1 Ag atoms per formula unit) have been prepared by pulsed laser deposition (PLD) starting from solid polycrystalline targets. The films were investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The good gas sensing properties for CO, as well as the sensitivity for CH4 and NO of the Ag; doped SnSe2 films have been demonstrated in the composition SnSe2Ag0.2. The structural effect of silver introduced in Ge2Sb2Te5 matrix has been investigated. The freshly deposited thin films doped by various amount of Ag develop three phases: an amorphous one, and two crystalline phases consisting of a major fcc cubic phase of AgSbTe2 and a minor cubic phase of composition Ag2Te. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Gold layers were deposited at oblique incidence onto glass plates. A B30.2 Hochvakuum Bedampfungsanlage equipment was used in this aim. The deposition conditions were chosen in order to obtain nanostructured layers. Correlations were found among these conditions and the corresponding nomograms were then obtained. Examples of such depositions were given and the layers structure was characterized and additionally supported by observing the molecular alignment given in the liquid crystal cells obtained with these gold layers.

In the aim to improve the adherence of the nanostructured gold layers onto glass substrate, gold deposition has been first time performed onto a polystyrene (PS) layer. The PS layer of ca. 50nm was spin-coated onto glass plates from a toluene solution. Gold layers of 10-20nm were vacuum deposited at small incidence angle. We found that at variance from the plates with gold deposited directly on the glass, the plates with an intermediate PS layer do not peel under overnight treatment in ethanol solution. The layers were characterized by several methods. X-ray diffraction (XRD) measurements showed that gold peaks have the position corresponding to the face-centered cubic structure: However, the crystallites on the sample with PS layer seem to be a little bit smaller than those with gold deposited directly onto the glass. XR reflectometry measurements have given the thickness of the gold layer in good agreement with the value estimated from quartz monitor readings and with the ellipsometric data as well, Liquid crystal cells were obtained to observe the molecular alignment imposed by the nanostructured gold layer deposited onto PS film. A rather strong interaction of gold atoms with the substrate molecules can be considered on the basis of the XRD and ellipsometry measurements.

Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

Intercalation, i.e. the insertion of guest species in a crystalline layered structure, is an efficient route for generating new materials with novel properties. Thin films and crystalline powder of BiI3 layered semiconductor were intercalated by exposure to ammonia vapors at room temperature. The intercalated compound was studied by thermo-gravimetric analysis, differential scanning calorimetry, X-ray diffraction, UV-vis optical absorption, FTIR spectroscopy and Raman scattering. After exposure of BiI3 to ammonia the formation of a new phase, BiI3(NH3)(3.83), was evidenced by thermal analysis. The intercalation process leads to a blue shift of the BiI3 Optical absorption edge by 0.5 eV. The appearance of new Raman lines at 135 and 353 cm(-1) in the Raman spectrum of intercalated BiI3 is considered as an evidence of the chemical interaction between the ammonia molecules and BiI3 lattice. (C) 2009 Elsevier Ltd. All rights reserved.

Two multiphoton absorption processes were revealed in a perylenediimide derivative, at the wavelength of 1064 nm, by using the thermal lens technique. One of the observed multiphoton processes is two photon absorption (TPA) while the second is a four photons process. The value of the measured TPA coefficient is beta = 0.12 x 10(-19) cm W-1.

Two-dimensional photonic structure has been imprinted on the surface of arsenic sulphide glass using the pulses of a femtosecond laser. Due to the interaction of the laser beam with the glass, the laser traces were obtained as hillocks of around 150-200 nanometer in height, or holes of depth around 100-300 nm, without the need for a later etching stage as in the usual practice. The calculation of the band structure shows a photonic band gap between 0.9 and 1.0 c/a. By varying the energy of the laser pulse we have the possibility to choose between the two possibilities to produce a photonic structure made-up of hillocks or a photonic structure consisting of holes. The value of the threshold pulse power which controls the resulting surface morphology and the obtained photonic structure has found to be around 15 mW. The surface topography of the structures obtained has been investigated by atomic force microscopy (AFM).

The electrical switching in solid compositions based on chalcogenide materials is discussed. Different mechanisms proposed for switching effect are reviewed. A new description of the switching phenomenon is done. The switching is regarded as due to formation and breaking of the links between the dendrites of crystalline nuclei in bulk materials, as a consequence of the energy pumped by an electrical field. This mechanism explains the very short switching time (<20ns), the possibility to get smart memories based on multisteps of resistivity and the high number of cycles supported by the cell (10(16)).

Hybrid systems obtained by incorporation of a nanostructurated material into a matrix from the same thermoelectric (TE) material are predicted to show an increased TE efficiency compared to classical bulk materials. The authors have synthesized Bi1.95Te2.7Se0.35 submicron wires by electrodeposition into a polycarbonate membrane; after polymer membrane dissolution, the wire array supported on a metallic film was electrochemically embedded in a Bi2Te2.65Se0.35 film in order to prepare a hybrid structure. Wires and hybrid structure were analyzed by scanning electron microscopy (SEM), energy X-ray spectrometry (EDX) and X-ray diffraction (XRD).