National Institute Of Materials Physics - Romania

Hafnium oxide (HfO2) thin films were deposited on n-type gallium arsenide (GaAs) substrates by Oxide-Molecular Beam Epitaxy (Oxide-MBE) method using Hafnium (Hf) metallic flow in an oxidizing atmosphere of 10-6 mbar molecular oxygen. The Hf metallic flow was provided by an e-beam evaporator and a deposition rate 10 nm/h was established. Semiconductor surface preparation was done prior to deposition, beginning with chemical wet etching and aggressively adjusted by in treatments until a desired stoichiometry was reached. Heterojunctions with HfO2 thin layers of 1 nm, 3 nm, 10 nm and 20 nm were fabricated. X-Ray Photoelectron Spectroscopy (XPS) and ARXPS(Angle Resolved XPS) in-situ analyses provided a clear picture of the structure of the interfaces, the chemical bonds and composition. The interfaces are chemically stable and abrupt. A small amount of Ga2O3 provides a passivating effect of the semiconductor surface. The electrical properties of the heterostructures were determined using the Kraut method and Reflection Electron Energy Loss Spectroscopy (REELS) technique. Band offsets Delta EC=1.75 eV and Delta EV=2.62 eV confirm a high application potential. Additionally, data on the morphology and continuity of the layers were obtained by Atomic Force Microscopy (AFM) technique while the amorphous growth was monitored by XRD(X-ray Diffraction), GIXRD (Grazing Incidence XRD) and XRR(X-ray Reflectivity) measurements. The dielectric layers showed values of the constant k in the range of 19-22, established by electrical measurements on MOS capacitors.

Cerium dioxide (CeO2) thin films with pyramidal nanostructures exhibiting a fractal aspect are suitable for various applications that require a large surface area. An accurate model of these films is valuable not only for optimizing the properties for specific applications but also for predicting and understanding the growth mechanism. In this paper, we present the foundation of a simulation for the growth of CeO2-x nanostructured thin films. We propose a 3-dimensional model of the surface nanostructures and link the morphology with crystallographic orientations and growth modes. To validate our model, we fabricated CeO2_ x thin films with different thicknesses using pulsed laser deposition (PLD) and characterized their morphological and structural properties. The evolution of our films shows the representative features of the Stranski-Krastanov model. The morphology changes from compact and smooth to dendritic with pyramidal nanostructures. The texture of our film also changes with thickness, and the preferential orientations are (111) and (220). Additionally, we characterize the CeO2_ x thin films from the chemical and optical points of view. The stoichiometry of CeO2 is not fully achieved, our thin films present the Ce3+ oxidation state at the surface. The formation of C-type Ce2O3 with fluorite structure can be associated with a small refractive index and small band gap.

We report large-scale synthesis of monolayer WS2 films obtained by sulfurization of oxidized magnetron sputtered monolayer W precursors. Literature routes typically require similar to 800 degrees C, well above the 400 degrees C limit imposed by back-end-of-line (BEOL) integration. Here, using an enhanced chemical vapor deposition (CVD) approach, the magnetron sputtered ultrathin W precursor (a W monolayer film, 0.27 nm thick, which in ambient air becomes a WOx monolayer) is sulfurized at the lowest possible temperature (450 degrees C) within a microreactor, which consists of a sandwich-like structure formed by the precursor and a clean Si substrate. The obtained WS2 material has a good crystallinity and uniform morphology across the entire growth substrate, as confirmed by detailed characterization. These results highlight the versatility of the method combining magnetron sputtering and microreactor-CVD, facilitating its applications to wafer-scale synthesis of monolayer WS2, heterogeneously integrated into electronic circuits (a major objective for next-generation electronics and optoelectronics). Additionally, we investigate in detail the properties of WS2 films synthesized from a bilayer W precursor (0.43 nm thick), under the same conditions, and we calculated the frequencies of the second-order Raman scattering modes. For electrical measurements, we fabricated WS2/few-layer-graphene heterostructures, whose atomically clean interface yields reliable, low-resistance contacts. These devices exhibit resistive switching behavior, likely governed by vacancy migration, making it a promising candidate for memristive applications. Our results demonstrate that electronics-grade monolayer WS2 can be synthesized at 450 degrees C, approaching the BEOL requirement of 400 degrees C.

This study presents an environmentally friendly approach for synthesis Ag-TiO2 composite using pulsed reverse current (PRC) electrodeposition from green electrolytes, specifically deep eutectic solvents (DESs). The combination of PRC and DESs offers better control over nanoparticle synthesis while eliminating the need for toxic or expensive precursors, representing a significant advancement in sustainable nanomaterial synthesis. Different electrochemical parameters were adjusted, and their influence on the structure and morphology of the composite was investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). TEM analysis revealed that silver nanoparticles (Ag NPs) are attached to TiO2 nanopowder, with the coexistence of TiO2 and Ag further confirmed by XRD and XPS. The recorded UV-Vis diffuse reflectance spectra (DRS) displayed a broad peak in the range of 400 - 650 nm, associated with the localized surface plasmon resonance (LSPR) of Ag NPs on the semiconductor's surface. The photocatalytic activity of TiO2 nanopowder and Ag-TiO2 composite was evaluated based on the degradation of methyl orange (MO) dye under UV and visible light illumination. Our findings clearly demonstrated that the incorporation of Ag improved the photocatalytic efficiency. The mechanism of MO dye degradation was explored by using various scavengers, revealing that superoxide radicals (center dot O-2(-)) play a dominant role. Furthermore, the incorporation of Ag NPs significantly enhanced the antimicrobial activity of the oxide against both Gram-positive (B. subtilis) and Gram-negative (E.coli) strains.

In this study, we detailed the fabrication and characterization of photovoltaic structures based on PTB7:ICBA (1:1, wt.%) bulk-heterojunction on optical glass substrates by spin-coating. Some samples were deposited on a flat substrate, and others were placed on a patterned substrate obtained by nano-imprinting lithography; the induced effects were analyzed. We demonstrated that using a patterned substrate enhanced the maximum output power, primarily because the short-circuit current density increased. This can be considered a direct consequence of reduced optical reflection and improved optical absorption. The topological parameters evaluated by atomic force microscopy, namely, the root mean square, Skewness, and Kurtosis, had small values of around 2 nm and 1 nm, respectively. This proves that the mixture of a conductive polymer and a fullerene derivative creates a thin film network with a high flatness degree. The samples discussed in this paper were fabricated and characterized in air; we can admit that the results are encouraging, but further optimization is needed.

The present research explores for the first time the intricate relationship between sulfurization temperature at unusual high temperatures (up to 700 degrees C) and the structural/optoelectronic properties of Cu-2(Zn,Cd)SnS4 (CZCTS) thin films, synthesized via a two-step sequential process involving the precursor film deposition using aprotic molecular ink followed by thermal treatment in sulfur atmosphere. X-ray diffraction patterns confirms the tetragonal structure. Scanning Electron Micrographs revealed significant grain growth, with grain sizes increasing from similar to 0.3 mu m at 620 degrees C to similar to 1.5 mu m at 680 degrees C, effectively reducing grain boundary recombination. Energy dispersive X-ray spectroscopy demonstrated a Cu-poor and Zn-rich composition, with a consistent Cd incorporation of similar to 3.7 at%. Raman spectroscopy showcases the homogeneity and purity of the CZCTS crystalline structure. Precise control of the sulfurization temperature plays a crucial role in determining the photovoltaic characteristics of CZCTS-based solar cells. By increasing the grain size and preventing the thermal decomposition of the CZTS phase, the photovoltaic performance peaked at a sulfurization temperature of 680 degrees C, achieving a power conversion efficiency (PCE) of 10.4%, with an open-circuit voltage of 0.701 V, a short-circuit current density of 24.3 mA/cm(2) and a fill factor of 60.8%. External quantum efficiency reached a maximum of 83.3% at 580 nm. The bandgap of the CZCTS absorber was determined to be 1.48 eV, optimal for photovoltaic applications. However, further increasing the sulfurization temperature to 700 degrees C resulted in a lower PCE of 8.5%, attributed to interface degradation and secondary phase formation. Temperature-dependent current-voltage measurements revealed a reduction in recombination losses, with an activation energy of 1.24 eV at the CZCTS/CdS interface, indicating effective defect passivation by Cd incorporation. The optimized films, sulfurized at 680 degrees C, displayed an absorber thickness of similar to 1.2 mu m after sulfurization, providing efficient light absorption and charge transport. The findings not only emphasize the critical role of sulfurization temperature in engineering CZCTS film and subsequently their functionality but also provide valuable insights for fine tuning their performance in the field of photovoltaic applications.

A multiphase high-entropy diboride (Ti0.25Ta0.25Hf0.25Zr0.25)B2 is obtained by spark plasma sintering from a mixture of single-metal diborides. The as-prepared material at the microscale can be defined as a composite where grains of a Ta-rich/Ti-poor complex diboride phase are the reinforcement and grains of Ta-poor/Ti-rich complex diboride are the matrix. However, at the nanoscale, the grains are heterogeneous, composed of regions with a multitude of complex diboride compositions. The interface between nanoregions is compositionally graded and has an irregular shape. The four-metal diboride shows a deformation-resistant mechanism under bending load. A strengthening process is active, increasing the room temperature bending strength (326 MPa) by approximate to 50% at 1800 degrees C (488 MPa). A ductile behavior with a deformation strain of approximate to 7.5% is observed at 2000 degrees C while bending strength (407 MPa) is approximate to 25% above the value at room temperature. At 2000 degrees C, observation of dislocations propagating from one compositional nanoregion to another and with a different density suggests dislocation contribution, first of all, to plasticity. The peculiar heterogeneity of this material at nano- and microscales is considered the reason for the remarkable mechanical response to bending load at different temperatures.

We investigate the second-order Floquet topological (SOFT) phase transitions, from the perspective of spatial symmetries. In this respect, we consider a generic honeycomb lattice Floquet topological insulator (FTI), realized by circularly polarized light irradiation, in the presence of spin-orbit coupling (Kane-Mele model). We find that our studied FTI presents chiral symmetry on a preferential direction in Fourier space, the same property that protects the topological phases in the Su-Schrieffer-Heeger (SSH) model. Thus we were allowed to characterize the SOFT phases in terms of mirror-graded winding numbers (Zak phase). Moreover, our model exhibits C2 and C3 symmetry in Fourier space, a property which lead us to investigate two finite structures having the aforementioned symmetries, namely, rhombic and triangular shapes. Indeed, we find that both of them undergo SOFT phase transitions, characterized by the appearance of 0D corner states symmetrically localized over the whole sheet. Finally, we investigate the C2 and C3 symmetry breaking. Interestingly, we reveal that the corner states are not destroyed, but localize at preferential corners instead, giving rise to a corner polarization.

The gas sensitivity of field-effect structures with 2D-MoS2 channels selectively grown between Mo electrodes using the Mo-CVD method was investigated by measuring the effect of molecular adsorption from air on the device source-drain current (Isd). The channels were composed of interconnected atomically thin MoS2 grains, with their density and average thickness varied by choosing two different distances (15 and 20 mu m) between the Mo contacts. A high response to the tested stimuli, including molecule adsorption, illumination and gate voltage changes, was observed. A significant, persistent photoconduction was induced by positive charge accumulation on traps, most likely at grain boundaries and associated defects. Isd increased under high vacuum, both in the dark and under illumination. The relative dark current response to the transition from air to high vacuum reached up to 1000% at the turn-on voltage. When monitored during the gradual change in air pressure, Isd exhibited a non-monotonic function, sharply peaking at about 10-2 mbar, suggesting molecular adsorption on different defect sites and orientations of adsorbed H2O molecules, which were capable of inducing electron accumulation or depletion. Despite the screening of disorder by extra electrons, the #20 mu m sample remained more sensitive to air molecules on its surface. The high vacuum state was also investigated by annealing devices at temperatures up to 340 K in high vacuum, followed by measurements down to 100 K. This revealed thermally stimulated currents and activation energies of trapping electronic states assigned to sulfur vacancies (230 meV) and other shallow levels (85-120 meV), possibly due to natural impurities, grain boundaries or disorder defects. The results demonstrate the high sensitivity of these devices to molecular adsorption, making the technology promising for the easy fabrication of chemical sensors.

We present herein the synthesis of novel [2 + 2] and [3 + 3] N-acylhydrazone-based macrocycles using a pool of dialdehydes and dihydrazides, under thermodynamic control. The resulting macrocycles, which were assigned triangular and rectangular shapes, were characterised in the solid state. The rectangular macrocycle was further investigated in solution by absorption and emission spectroscopy. Additionally, the rectangular macrocycle was used in various assays to investigate the hosting capacity towards various guests using NMR, HRMS, UV-visible and fluorescence spectroscopy. Theoretical calculations regarding structure and properties of the novel compounds were in agreement with the experimental details. The experimental data showed intriguing results toward tetra-n-butylammonium fluoride.