National Institute Of Materials Physics - Romania

Ag-decorated TiO2 aerogels were synthesized using an acid-catalyzed sol-gel method, followed by drying under supercritical CO2 and annealing within the temperature range of 350-500 degrees C, with 50 degrees C increments. This study explores the preparation-structure-performance relationships of Ag-TiO2 aerogels influenced by the annealing process, focusing on their morphological, (micro)structural, optical, and textural properties and surface defects concerning photocatalytic activity. X-ray diffraction (XRD) and Raman spectroscopy confirmed that all aerogels exhibited a single anatase phase of TiO2, while electron microscopy (SEM/TEM) and XPS analysis demonstrated the presence of components. Increasing the annealing temperature resulted in particle size and pore structure changes, reducing the aerogel's overall surface area and porosity, as observed by SEM and nitrogen (N2) sorption analysis. Additionally, according to the Williamson-Hall (W-H) analysis based on the X-ray peak profile, the lattice microstrain value decreased while the crystallite size increased with rising annealing temperature. Optical investigation showed a strong UV light absorption characteristic of TiO2 and a visible light absorption band attributed to the plasmonic effect of silver nanoparticles. Moreover, a gradual photoluminescence (PL) quenching trend was observed with decreasing annealing temperature, indicating a reduction in the recombination rate of photo-induced electrons and holes in Ag-TiO2, alongside the formation of oxygen vacancies and structural defects, consistent with electron paramagnetic resonance (EPR) measurements. The Ag-decorated TiO2 aerogels demonstrated enhanced visible-light photocatalytic activity for methylene blue (MB) degradation, with the Ag-TiO2 aerogel annealed at 500 degrees C exhibiting the highest photocatalytic performance. This improvement can be attributed to the synergistic effects of chemical composition, plasmonic enhancement, morphological properties, and light absorption characteristics.

The present research explores for the first time the intricate relationship between sulfurization temperature at unusual high temperatures (up to 700 degrees C) and the structural/optoelectronic properties of Cu-2(Zn,Cd)SnS4 (CZCTS) thin films, synthesized via a two-step sequential process involving the precursor film deposition using aprotic molecular ink followed by thermal treatment in sulfur atmosphere. X-ray diffraction patterns confirms the tetragonal structure. Scanning Electron Micrographs revealed significant grain growth, with grain sizes increasing from similar to 0.3 mu m at 620 degrees C to similar to 1.5 mu m at 680 degrees C, effectively reducing grain boundary recombination. Energy dispersive X-ray spectroscopy demonstrated a Cu-poor and Zn-rich composition, with a consistent Cd incorporation of similar to 3.7 at%. Raman spectroscopy showcases the homogeneity and purity of the CZCTS crystalline structure. Precise control of the sulfurization temperature plays a crucial role in determining the photovoltaic characteristics of CZCTS-based solar cells. By increasing the grain size and preventing the thermal decomposition of the CZTS phase, the photovoltaic performance peaked at a sulfurization temperature of 680 degrees C, achieving a power conversion efficiency (PCE) of 10.4%, with an open-circuit voltage of 0.701 V, a short-circuit current density of 24.3 mA/cm(2) and a fill factor of 60.8%. External quantum efficiency reached a maximum of 83.3% at 580 nm. The bandgap of the CZCTS absorber was determined to be 1.48 eV, optimal for photovoltaic applications. However, further increasing the sulfurization temperature to 700 degrees C resulted in a lower PCE of 8.5%, attributed to interface degradation and secondary phase formation. Temperature-dependent current-voltage measurements revealed a reduction in recombination losses, with an activation energy of 1.24 eV at the CZCTS/CdS interface, indicating effective defect passivation by Cd incorporation. The optimized films, sulfurized at 680 degrees C, displayed an absorber thickness of similar to 1.2 mu m after sulfurization, providing efficient light absorption and charge transport. The findings not only emphasize the critical role of sulfurization temperature in engineering CZCTS film and subsequently their functionality but also provide valuable insights for fine tuning their performance in the field of photovoltaic applications.

The gas sensitivity of field-effect structures with 2D-MoS2 channels selectively grown between Mo electrodes using the Mo-CVD method was investigated by measuring the effect of molecular adsorption from air on the device source-drain current (Isd). The channels were composed of interconnected atomically thin MoS2 grains, with their density and average thickness varied by choosing two different distances (15 and 20 mu m) between the Mo contacts. A high response to the tested stimuli, including molecule adsorption, illumination and gate voltage changes, was observed. A significant, persistent photoconduction was induced by positive charge accumulation on traps, most likely at grain boundaries and associated defects. Isd increased under high vacuum, both in the dark and under illumination. The relative dark current response to the transition from air to high vacuum reached up to 1000% at the turn-on voltage. When monitored during the gradual change in air pressure, Isd exhibited a non-monotonic function, sharply peaking at about 10-2 mbar, suggesting molecular adsorption on different defect sites and orientations of adsorbed H2O molecules, which were capable of inducing electron accumulation or depletion. Despite the screening of disorder by extra electrons, the #20 mu m sample remained more sensitive to air molecules on its surface. The high vacuum state was also investigated by annealing devices at temperatures up to 340 K in high vacuum, followed by measurements down to 100 K. This revealed thermally stimulated currents and activation energies of trapping electronic states assigned to sulfur vacancies (230 meV) and other shallow levels (85-120 meV), possibly due to natural impurities, grain boundaries or disorder defects. The results demonstrate the high sensitivity of these devices to molecular adsorption, making the technology promising for the easy fabrication of chemical sensors.

We present herein the synthesis of novel [2 + 2] and [3 + 3] N-acylhydrazone-based macrocycles using a pool of dialdehydes and dihydrazides, under thermodynamic control. The resulting macrocycles, which were assigned triangular and rectangular shapes, were characterised in the solid state. The rectangular macrocycle was further investigated in solution by absorption and emission spectroscopy. Additionally, the rectangular macrocycle was used in various assays to investigate the hosting capacity towards various guests using NMR, HRMS, UV-visible and fluorescence spectroscopy. Theoretical calculations regarding structure and properties of the novel compounds were in agreement with the experimental details. The experimental data showed intriguing results toward tetra-n-butylammonium fluoride.

We report on the increase of luminescence of ZnS:Ag after exposure to a radio-frequency (RF) argon plasma at low powers ranging from 5W to 50W. The best luminescence enhancement was achieved at 5W RF power, when the increase was approximately 57.02 % over a 35-min exposure. The luminescence is measured in-situ by excitation with an electron beam with energy 13 keV and a fiber coupled to a spectrometer. The increase in luminescence is attributed to the cleaning effect of surface defects of the crystal caused by argon ions accelerated in the plasma sheath. Surface impurities were highlighted by TEM and XPS analysis. Zn2p(3/2), Zn2p(1/2) and S2p(3/2) peaks show initially high oxidation state and after plasma treatment they shifted to lower value which indicated a decontamination of trapped oxygen. At higher RF powers up to 50W, the trend of increased luminescence continues, but it is mitigated by the thermal quenching effect and sulfur depletion observed in EDS analysis. Calculations based on power deposition indicate a thermoquenching point of approximately 130-150 degrees C.

Most photocatalytic processes involve physicochemical phenomena occurring at the semiconductor-water interface. The interfacial charge transfer strongly depends on the charge carrier self-trapping or defect-based trapping mechanisms active in the crystal lattice of the photocatalyst. Thus, the crystal lattice distortion is expected to influence the photocatalytic efficiency during polymorphic phase transformations (PPT). A simple synthesis method involving the ultrasound-assisted excess hydrolysis of titanium tetra-isopropoxide (TTIP) (hydrolysis ratio (number of moles of water/number of moles of TTIP) r = 245) was used to obtain multiphase titanium dioxide (TiO2) nanomaterials with complex defect structures. Electron paramagnetic resonance (EPR) spectroscopy was employed to characterize the paramagnetic centers in the synthesized TiO2 and their behavior during incipient PPT. The calcined samples showed a complex defect structure comprising three types of paramagnetic centers: F+-centers (an electron trapped in an oxygen vacancy (Ov)), V-centers (oxygen ions with trapped holes) and paramagnetic centers involving Ti3+ such as Ti3+- Ov. The sample obtained at 600 degrees C, temperature marking the onset of a massive mixed transformation of anatase into rutile and brookite, composed of approximately 81 % anatase, 10 % brookite, and 9 % rutile, exhibited an intense and broadened EPR signal and enhanced photocatalytic activity for hydroxyl radical generation and hydrogen production by water splitting, despite its rather low specific surface area of 34 m2/g. The results revealed the synergistic effects of charge carrier trapping mechanisms in the early stages of PPT, boosting the photocatalytic performance of TiO2. The present study supports the design of facile synthesis methods for better TiO2 photocatalysts and promotes the development of further studies regarding lattice defect engineering during phase transformations in nanomaterials.

We theoretically study the 2D Su-Schrieffer-Heeger model in the context of Floquet topological insulators (FTIs). FTIs are systems which undergo topological phase transitions, governed by Chern numbers, as a result of time reversal symmetry (TRS) breaking by a time periodic process. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light irradiation. We analytically show that TRS breaking is forbidden in the absence of second order neighbors hopping. In the absence of light irradiation, we identify a symmetry-protected degeneracy and prove the appearance of a flat band along a specific direction in the momentum space. Furthermore, we employ a novel method to show that the four unit cell atoms, in the absence of irradiation, can be interpreted as conserved spin states. With the breaking of TRS via light irradiation, these spin states are no longer conserved, leading to the emergence of chiral edge states. We also show how the interplay between the TRS breaking and dimerization leads to some complex topological phase transitions. The validity of our findings is substantiated through Chern numbers, spectral properties, localization of chiral edge states and simulations of quantum Hall transport. Our model is suitable not only for condensed matter (materials), but also for cold gases trapped in optical lattices or topolectrical circuits.

A multiphase high-entropy diboride (Ti0.25Ta0.25Hf0.25Zr0.25)B2 is obtained by spark plasma sintering from a mixture of single-metal diborides. The as-prepared material at the microscale can be defined as a composite where grains of a Ta-rich/Ti-poor complex diboride phase are the reinforcement and grains of Ta-poor/Ti-rich complex diboride are the matrix. However, at the nanoscale, the grains are heterogeneous, composed of regions with a multitude of complex diboride compositions. The interface between nanoregions is compositionally graded and has an irregular shape. The four-metal diboride shows a deformation-resistant mechanism under bending load. A strengthening process is active, increasing the room temperature bending strength (326 MPa) by approximate to 50% at 1800 degrees C (488 MPa). A ductile behavior with a deformation strain of approximate to 7.5% is observed at 2000 degrees C while bending strength (407 MPa) is approximate to 25% above the value at room temperature. At 2000 degrees C, observation of dislocations propagating from one compositional nanoregion to another and with a different density suggests dislocation contribution, first of all, to plasticity. The peculiar heterogeneity of this material at nano- and microscales is considered the reason for the remarkable mechanical response to bending load at different temperatures.

Polymorphism determines significant variations in materials' properties by lattice symmetry variation. If they are stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; changes of temperature or pressure when switching from one polymorph to another during synthesis may cause degradation of the structural quality. The present work reports on the single-step ion-beam-assisted fabrication of multilayered polymorph structures while applying the disorder-induced ordering approach. The dynamic annealing of disorder may be tuned, during ion irradiation, toward self-assembling of several polymorph interfaces. Gallium oxide multilayers with two polymorph interface repetitions are obtained. The single-crystal structure of the polymorphs is maintained between interfaces, exhibiting repeatable crystallographic relationships and optical properties. These data pave the way for enhancing materials' functionalities using not previously conceived capabilities of ion beam technology.

This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron sputtering from separate Ge and Sn targets using different Ar: H mixing ratios as working gas. Amorphous Ge1-xSnx:H films have been obtained on both c-Si and fused quartz substrates at ambient temperature, while dynamic nanocrystallization occurs in-situ when the substrate temperature during deposition is raised to 200 degrees C. Fourier-transform infrared spectroscopy has shown the hydrogen incorporation by detecting an absorption line at 1873 cm(-1), close to the value corresponding to Ge-H bonding, only in the room temperature amorphous films. Based on that, we infer that the hydrogen concentration is very low in the films deposited at high temperature. The higher concentration of hydrogen in the amorphous samples is associated with an increase of the absorption gap to 0.5 eV compared to 0.3 eV in the 200 degrees C samples. In-situ (during deposition) and ex-situ (by subsequent rapid thermal annealing) nanocrystallization have been analyzed by high-resolution transmission electron microscopy, X-ray diffraction and micro-Raman spectroscopy. SWIR spectral photosensitivity up to 2.4 mu m was found to be more than two orders of magnitude improved in hydrogenated amorphous films with high hydrogen content, compared to the nanocrystalline ones that are weakly hydrogenated. These findings demonstrate the potential of hydrogenation to enhance the photoelectric properties of GeSn sputtering films for optoelectronic SWIR infrared applications.