National Institute Of Materials Physics - Romania

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1-xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (<160K), a semiconductor depletion forms in Ge near the interface, resulting in an increase in coercive voltage by about 2V, accompanied by a distortion of the ferroelectric hysteresis with subloop asymmetric behavior, which becomes more severe at higher frequencies of measurement. At higher temperatures, the Ge surface near the ferroelectric is easily inverted due to the low energy gap of Ge, providing sufficient screening of the polarization charge by minority free carriers, in which case, nearly ideal, symmetric hysteresis curves are recovered. The depolarization field is experimentally extracted from the coercive voltage and the capacitance measurements, is found to be 2.2MV/cm in the low temperature range, comparable to the coercive field, then rapidly decreases at higher temperatures, and effectively diminishes at room temperature. This makes Ge MFSs good candidates for FeFETs for low voltage non-volatile memory with improved reliability.

Formation of SiGe nanocrystals in an oxide matrix via deposition and subsequent annealing is a widely applied approach as it gives good control over optical properties by varying the Ge atomic fraction, the size, shape and crystallinity of the nanocrystals. A common drawback of annealing is a strain relaxation in the structure creating dislocations, point defects, dangling bonds, Ge clustering and altered interface morphology. All these phenomena are well-known to degrade the optoelectronic and electrical properties of the structure. As a proof of concept, in this study we have utilized a modern technique of high impulse power magnetron sputtering (HiPIMS) to obtain a crystalline TiO2/SiGe/TiO2 structure without any pre-/post-annealing. It is furthermore demonstrated how a control of the nano-crystallite size is obtained by altering the HiPIMS discharge power alone. Grazing incidence X-ray diffraction analysis was carried out for the structural characterization, while photocurrent measurements were utilized to access the role of TiO2 structural morphology over interface integrity in determining spectral feature and sensitivity. An increase of 1 - 2 orders magnitude in spectral intensity was achieved for as-grown structures fabricated via HiPIMS in comparison to annealed structure, sputtered with conventional direct current magnetron sputtering.

Mesoporous CeO2:Mn3O4 materials (3:7 and 7:3 molar ratio) were prepared by co-precipitation and deposited as porous thick films over alumina (Al2O3) planar substrate provided with Pt meander. The aim was oriented towards detecting low levels methane (CH4) at moderate operating temperatures. Herein we demonstrated that the sensitivity of catalytic micro-converters (CMCs) towards a given peak of CH4 concentration corresponds to specific gas-surface interaction phenomena. More precisely, a transition from thermal conductivity to combustion rate is likely to occur when CMCs are operated under real atmospheric conditions (normal pressure, presence of relative humidity, and constant operating temperature). The response to CH4 was analyzed over different gas flows and different gas concentrations under the same operating regime. The materials were fully characterized by adsorption-desorption isotherms, H-2-Temperature Programmed Reduction (H-2-TPR), X-ray Diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), and Raman spectroscopies. Thus, the applicative aspect of using CeO2:Mn3O4 as moderate temperature CMC for CH4 detection is brought to the fore.

Grain boundaries, twins, and defects are considered to influence the thermomechanical behavior of any covalent ceramic, as a result, monolithic B4C samples show different curve shapes of bending strength vs temperature and the present theoretical models fail to fit them over the entire temperature range. To overcome these issues, we fabricated a novel high-density boron carbide and evaluated its high-temperature bending strength. The as-obtained ceramic is composed of boron carbide grains and a fine grain-boundary metal Pt framework. The material shows a decreased strength, which is due to a non-linear increase in the volume expansion coefficient of the B4C. Recovery in strength above 1000 degrees C is due to the presence of twins, their growth and rearrangements. We consider twins rearrangements are the pieces of evidence for a novel 'micro' mechanism of high-temperature stress accommodation for the boron carbide bulks.

A one-step method assisted by hydrothermal treatment was approached to obtain nanocrystalline 1 and 10 mol. % In doped 2 mol.% Pd-SnO2 powders using a non-ionic surfactant Brij52 and Polyethylene glycol 6000 (PEG) as templates. Depending on In content, the samples were labeled as Pd1InSn and Pd10InSn. The obtained materials consist of nanosized crystallites packed into micrometric grains with a high porosity, as revealed by the morphological and structural investigations (SEM, TEM). A dependence of the grain size with respect to the In content has been revealed i.e. the sample Pd1InSn was showing an average grain size of around 10 nm, whilst for the sample Pd10InSn the average grain size was found to be around 5 nm. The XPS investigations highlighted the differences occurred in the surface chemistry in terms of surface hydroxylation as well as the chemical states of Pd. The sensing properties towards different CO concentrations have been examined under infield background conditions, at low operating temperature of 50 degrees C. The sensing mechanism model for CO was discussed in detail according to the possible interplay between oxygen and water related species based on the experimentally results acquired through simultaneous electrical resistance and work function measurements.

A complex investigation of the morpho-structural, magnetic, magneto-optical and magneto-transport properties of amorphous Fe-Gd thin films crossing the magnetization compensation point is reported and the unexpected observed magneto-functionalities are discussed. A tendency of magnetic domain formation with increasing the Fe content over the compensation concentration is observed. The switch from a reversed Magneto-optical Kerr Effect loop to a direct loop when increasing the Fe content over the compensation point is explained via the specific contribution to the rotation of the polarization vector from each magnetic sublattice, belonging to Fe and Gd, respectively. Local atomic configurations and magnetic interactions ascertained the amorphous character and revealed an out-ofplane orientation of the magnetic moment of Fe above the compensation point. The thermomagnetic curves prove a concentration dependent behavior, explained by weakly coupled magnetization relaxation processes of the two magnetic sub-lattices. On the other hand, the magnetic hysteresis loops gave evidence of two exchange coupled magnetic phases with different coercive fields. According to structural and Fe-57 Mossbauer Spectroscopy results, the two phases correspond to definite nanosized volumes of two different average concentrations (one of them closer to the compensation point) which are randomly distributed in the film. The unexpected single step-like behavior of the magneto-resistivity curves was explained by dissimilar switching of the spins in these two magnetic phases distributed in nano-sized volumes.

We explore the cross coupling between the ferroelectric and ferromagnetic phases in Ni/BaTiO3(001) heterostructures and demonstrate the modulation of the magnetism and incidence of exchange bias in the ultrathin metallic Ni overlayer, depending on the ferroelectric state of the bottom layer. We establish that 5-nm-thick monocrystalline Ni film deposited on BaTiO3 with ferroelectric polarization pointing towards the surface (P+) favors the organization of Ni into uniform ferromagnetic domains. Ni grown on BaTiO3 with opposite ferroelectric polarization is featured by emerging exchange-bias coupling between the ferromagnetic Ni top layers and the antiferromagnetic reacted interface, as theoretically explained by first-principles calculations. We explicitly obtain the morphology of the magnetic domains of the crystalline Ni layer in atomic and magnetic force microscopy measurements (AFM/MFM). The resemblance of AFM and MFM images indicate that, although with radically different morphologies, in both cases all spins orient in the Ni plane. Consequently, the distinct signature of the ferroelectric-ferromagnetic coupling extracted from the magneto-optical Kerr effect measurements encodes all the information of sample magnetism. The peculiar magnetic coupling depending on the ferroelectric state indicates new ways of engineering the functionality of metal/ferroelectric interfaces.

A versatile, modular in situ high-intensity monochromatic illumination set-up installed on a standard Q-band ESR spectrometer equipped with a cryostat and probe head for measurements at cryogenic temperatures, which can be easily assembled from commercially available optical components is presented. Using as monochromatic light sources pig-tailed laser diodes (LDs) or fiber-coupled light-emitting diodes (LEDs), a high efficiency of the light transfer (more than 95%) through an optical guide inserted in the sample holder is achieved in the sample area of the microwave cavity. With various LEDs and LDs, one can perform ESR in situ illumination experiments from UV to far-IR, in both cw and pulse mode. Its operation is illustrated with an experiment revealing the presence of certain ESR silent defects in oxygen-doped floating-zone ultrapure Si samples irradiated at room temperature with high-energy-high-fluence electron beams and pulse annealed up to 300 degrees C. New information is obtained by comparing the ESR spectra recorded at T = 120 K, without and with 1.06 mu m across-the-gap in situ illumination.

A facile and cheap surfactant-assisted hydrothermal method was used to prepare mesoporous cobalt ferrite nanosystems with BET surface area up to 151 m(2)/g. These mesostructures with high BET surface areas and pore sizes are made from assemblies of nanoparticles (NPs) with average sizes between 7.8 and 9.6 nm depending on the initial pH conditions. The pH proved to be the key factor for controlling not only NP size, but also the phase purity and the porosity properties of the mesostructures. At pH values lower than 7, a parasite hematite phase begins to form. The sample obtained at pH = 7.3 has magnetization at saturation M-s = 38 emu/g at 300 K (54.3 emu/g at 10 K) and BET surface area S-BET = 151 m(2)/g, whereas the one obtained at pH = 8.3 has M-s = 68 emu/g at 300 K (83.6 emu/g at 10 K) and S-BET = 101 m(2)/g. The magnetic coercive field values at 10 K are high at up to 12,780 Oe, with a maximum coercive field reached for the sample obtained at pH = 8.3. Decreased magnetic performances are obtained at pH values higher than 9. The iron occupancies of the tetrahedral and octahedral sites belonging to the cobalt ferrite spinel structure were extracted through decomposition of the Mossbauer patterns in spectral components. The magnetic anisotropy constants of the investigated NPs were estimated from the temperature dependence of the hyperfine magnetic field. Taking into consideration the high values of BET surface area and the magnetic anisotropy constants as well as the significant magnetizations for saturation at ambient temperature, and the fact that all parameters can be adjusted through the initial pH conditions, these materials are very promising as recyclable anti-polluting agents, magnetically separable catalysts, and targeted drug delivery vehicles.

Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NC s composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 degrees C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 10(3) times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 degrees C annealed films to 1210 nm for those at 1000 degrees C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 degrees C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW(-1).