National Institute Of Materials Physics - Romania

The memory properties of a trilayer structure of ZrO2/Ge-ZrO2/ZrO2/Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO2 matrix. The X-ray diffraction patterns obtained on annealed structures show that both trilayer structures are cristallized, with narrow diffraction peaks. Ge as a separated phase is not evidenced in the diffractograms, instead is possible that Ge atoms enters in ZrO2 lattice structure and form a compound of ZrO3GeO8 crystallized in the tetragonal phase. In the case of ZrO2 control structure, the diffractograms show that the ZrO2 layer is crystallized in tetragonal phase. The memory properties are evidenced by C-V characteristics with counterclockwise hysteresis loop and a memory window of Delta V=1.1V for the structure annealed at 570 degrees C and Delta V=0.8 V for the structure annealed at 650 degrees C. The influence of the interface SiO2 layer on the frequency dependence of capacitance was evidenced by C-f characteristics.

Context: The work shows the alignment of virtual environment to the needs of the industrial revolution of level 4. Purpose or Goal: The work insists on the qualities that remote experiment offers for the global engineer creation and on the skills for hiring and rapid adaptation to the industry needs. Approach: In the university environment the remote experiment plays a decisive role in facilitating e-learning development for specialties that cannot exist without an experimental-applying part. Remote experiment must to satisfy both the needs of evolution in education and those from the industry (i.e. globalization, digitalization, socio-economic world). It is noted the emergence of new skills namely: "Cognitive flexibility" and "Emotional intelligence". After us, the most important trend, derived from the application of remote experiment and its use is "acceptance of failure". Until recently, the failure was penalized with bad marks. Acceptance is defined as a succession of failures by whose gradual removal, the amount of accumulated knowledge increases. It was concluded that failure is an important part of the road to innovation and creativity. Actual or Anticipated Outcomes: Technology progresses exponentially and the society linear. Over time, it can create a gap between technology and society. It was found from practice that the remote experiment is much more connected to the needs of industry than classical laboratories. Conclusions/Recommendations: Remote experiments can create skills and competencies faster than those achieved through classical learning systems for immediate necessity in industry.

The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challenge, mainly because of the low miscibility of Ge and Sn. The use of embedded GeSn nanocrystals (NCs) by magnetron sputtering is a cost-effective and efficient method to relax the growth conditions. We report on the use of GeSn/SiO2 multilayer deposition as a way to control the NC size and their insulation. The in situ prenucleation of NCs during deposition was followed by ex situ rapid thermal annealing. The nanocrystallization of 20X(11nm_Ge0.865S0.135/1.5nm_SiO2) multilayers leads to formation of GeSn NCs with similar to 16% Sn concentration and similar to 9 nm size. Formation of GeSn domes that are vertically correlated contributes to the nanocrystallization process. The absorption limit of similar to 0.4 eV in SWIR found by ellipsometry is in agreement with the spectral photosensitivity. The ITO/20x(GeSn NC/SiO2)/p-Si/Al diodes show a maximum value of the SWIR photosensitivity at a reverse voltage of 0.5 V, with extended sensitivity to wavelengths longer than 2200 nm. The multilayer diodes have higher photocurrent efficiency compared to diodes based on a thick monolayer of GeSn NCs.

Eutectic particles of B4C-TiB2 were reinforced with Ti by spark plasma sintering (SPS) or infiltration. The SPSed samples with 20, 30 and 40 wt. % Ti consisted of ceramic phases, and had a bicontinuous macrostructure formed by the Ti-rich region and the eutectic particles region, while the infiltrated sample was a complex composite comprised of a 3D Ti-rich continuous network, composite in nature, that contained Ti-metal and in which are embedded isolated ceramic (eutectic) particles. The SPSed samples are brittle with the maximum bending strength of 300 MPa for the 30 wt. % Ti, higher than for a reference sample produced by SPS from directionally solidified eutectic particles. A higher amount of added Ti results in a higher displacement in the bending test suggesting a higher fracture toughness. Simultaneous strengthening and toughening of the composite was realized. The infiltrated sample was ductile, while its bending strength (220 MPa) was comparable to the values measured for the brittle as-introduced reference sample and the sample with 20 wt. % Ti, both produced by SPS. In the SPSed and infiltrated samples at the interface between the Ti-rich region and B4C-TiB2 eutectic particles, a local 'pull-out' intergranular fracturing mechanism mainly involving Ti-B 1D-grains was observed. This local micromechanism together with a 'pull out' macromechanism of the eutectic grains from the Ti-rich component are considered important for the bridging/anchoring behavior responsible for the strengthening and toughening processes in our novel hierarchical composites.

In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO(2)three-layer structure. This kind of transistor has a switching ratio of 10(3)between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.

Biopolymers provide versatile platforms for designing naturally-derived wound care dressings through eco-friendly pathways. Eggshell membrane (ESM), a widely available, biocompatible biopolymer based structure features a unique 3D porous interwoven fibrous protein network. The ESM was functionalized with inorganic compounds (Ag, ZnO, CuO used either separately or combined) using a straightforward deposition technique namely radio frequency magnetron sputtering. The functionalized ESMs were characterized from morphological, structural, compositional, surface chemistry, optical, cytotoxicity and antibacterial point of view. It was emphasized that functionalization with a combination of metal oxides and exposure to visible light results in a highly efficient antibacterial activity against Escherichia coli when compared to the activity of individual metal oxide components. It is assumed that this is possible due to the fact that an axial p-n junction is created by joining the two metal oxides. This structure separates into components the charge carrier pairs promoted by visible light irradiation that further can influence the generation of reactive oxygen species which ultimately are responsible for the bactericide effect. This study proves that, by employing inexpensive and environmentally friendly materials (ESM and metal oxides) and fabrication techniques (radio frequency magnetron sputtering), affordable antibacterial materials can be developed for potential applications in chronic wound healing device area.

Nanocomposite thin films, sensitive to methane at the room temperature (25-30 degrees C), have been prepared, starting from SnSe2 powder and Zn(II)-5,10,15,20-tetrakis-(4-aminophenyl)- -porphyrin (ZnTAPP) powder, that were fully characterized by XRD, UV-VIS, FT-IR, Nuclear Magnetic Resonance (H-1-NMR and C-13-NMR), Atomic Force Microscopy (AFM), SEM and Electron Paramagnetic Resonance (EPR) techniques. Film deposition was made by drop casting from a suitable solvent for the two starting materials, after mixing them in an ultrasonic bath. The thickness of these films were estimated from SEM images, and found to be around 1.3 mu m. These thin films proved to be sensitive to a threshold methane (CH4) concentration as low as 1000 ppm, at a room temperature of about 25 degrees C, without the need for heating the sensing element. The nanocomposite material has a prompt and reproducible response to methane in the case of air, with 50% relative humidity (RH) as well. A comparison of the methane sensing performances of our new nanocomposite film with that of other recently reported methane sensitive materials is provided. It is suitable for signaling gas presence before reaching the critical lower explosion limit concentration of methane at 50,000 ppm.

We report the facile and low-cost preparation as well as detailed characterization of dense arrays of passivated ferromagnetic nickel (Ni) nanotubes (NTs) vertically-supported onto solid Au-coated Si substrates. The proposed fabrication method relies on electrochemical synthesis within the nanopores of a supported anodic aluminum oxide (AAO) template and allows for fine tuning of the NTs ferromagnetic walls just by changing the cathodic reduction potential during the nanostructures' electrochemical growth. Subsequently, the experimental platform allowed further passivation of the Ni NTs with the formation of ultra-thin antiferromagnetic layers of nickel oxide (NiO). Using adequately adapted magnetic measurements, we afterwards demonstrated that the thickness of the NT walls and of the thin antiferromagneticNiO layer, strongly influences the magnetic behavior of the dense array of exchange-coupled Ni/NiO NTs. The specific magnetic properties of these hybrid ferromagnetic/antiferromagnetic nanosystems were then correlated with the morpho-structural and geometrical parameters of the NTs, as well as ultimately strengthened by additionally-implemented micromagnetic simulations. The effect of the unidirectional anisotropy strongly amplified by the cylindrical geometry of the ferromagnetic/antiferromagnetic interfaces has been investigated with the magnetic field applied both parallel and perpendicular to the NTs axis.

ZnO nanostructures with intrinsic and extended defects were prepared by rapid decomposition of zinc-propio-nate and annealing at 400 degrees C-970 degrees C. The correlation between the structure/morphology, type of native defects (photoluminescence (PL), EPR) and ferromagnetism was investigated, together with ammonia adsorption capacity. All the samples show room temperature ferromagnetism (RTFM). Crystallite size increases while the unit cell volume, c-axis constant, microstrain and saturation magnetization relax with increasing temperature; morphology varies from aggregated nanoparticles to frameworks of well-welded crystals. 400 degrees C-800 degrees C annealed samples show a broad visible and/or a prominent violet-blue PL emission and, two narrow g = 2.0065 and g = 1.9632 EPR signals. 800 degrees C-970 degrees C annealed samples exhibit very intense green-yellow photoluminescence. The intrinsic defects in conjunction with a deformed lattice and/or pinned by grain-boundaries appear responsible for RTFM and Curie temperature exceeding 700 degrees C. Tuning the morphology, PL intensity and ferromagnetic signal by choice of annealing temperature can find applications in (gas) sensing, photonic/optoelectronic and spintronic devices.

The K alpha and K beta x-ray spectra of Se, Y, and Zr were studied experimentally and theoretically in order to obtain information on the K alpha(1) line asymmetry and the spin doublet in K beta(1,3) diagram lines. Using a high-resolution antiparallel double-crystal x-ray spectrometer, we obtained the line shapes, that is, asymmetry index and natural linewidths. We found that the corrected full width at half maximum of the K alpha(1) and K alpha(2) lines as a function of Z is in good agreement with the data in the literature. Furthermore, satellite lines arising from shake-off appear in the low-energy side of the K alpha(1) and K alpha(2) lines in Se but, in Y and Zr, it was very difficult to identify the contribution of the shake process to the overall lines. The K beta(1,3) natural linewidth of these elements was also corrected using the appropriate instrumental function for this type of x-ray spectrometer, and the spin doublet energies were obtained from the peak positions. The corrected full width at half maximum (FWHM) of the K alpha(1) x-ray lines increases linearly with Z, but this tendency was found to be, in general, not linear for K alpha(3) x-ray lines. This behavior may be due to the existence of satellite lines originated from shake processes. Simulated line profiles, obtained using the multiconfiguration Dirac-Fock formalism, accounting for radiative and radiationless transitions and shake-off processes, show a very good agreement with the high-resolution experimental spectra.