National Institute Of Materials Physics - Romania

This study presents the synthesis and characterization of lanthanum-modified alumina supported cerium-manganese mixed oxides, which were prepared by three different methods (coprecipitation, impregnation and citrate-based sol-gel method) followed by calcination at 500 degrees C. The physicochemical properties of the synthesized materials were investigated by various characterization techniques, namely: nitrogen adsorption-desorption isotherms, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and H-2-temperature programmed reduction (TPR). This experimental study demonstrated that the role of the catalytic surface is much more important than the bulk one. Indeed, the incipient impregnation of CeO2-MnOx catalyst, supported on an optimized amount of 4 wt.% La2O3-Al2O3, provided the best results of the catalytic combustion of methane on our catalytic micro-convertors. This is mainly due to: (i) the highest pore size dimensions according to the Brunauer-Emmett-Teller (BET) investigations, (ii) the highest amount of Mn4+ or/and Ce4+ on the surface as revealed by XPS, (iii) the presence of a mixed phase (Ce2MnO6) as shown by X-ray diffraction; and (iv) a higher reducibility of Mn4+ or/and Ce4+ species as displayed by H-2-TPR and therefore more reactive oxygen species.

Detection in short-wave infrared (SWIR) has become a very stringent technology requirement for developing fields like hyperspectral imaging or climate changes. In a market dominated by III-V materials, GeSn, a Si compatible semiconductor, has the advantage of cost efficiency and inerrability by using the mature Si technology. Despite the recent progress in material growth, the easy fabrication of crystalline GeSn still remains a major challenge, and different methods are under investigation. We present the formation of GeSn nanocrystals (NCs) embedded in oxide matrix and their SWIR characterization. The simple and cost-effective fabrication method is based on thermal treatment of amorphous (Ge1-xSnx)(y)(SiO2)(1-y) layers deposited by magnetron sputtering. The nanocrystallization for Ge1-xSnx with 9-22 at. % Sn composition in SiO2 matrix with 9% to 15% mole percent was studied under low thermal budget annealing in the 350-450 degrees C temperature range. While the Sn at.% content is the main parameter influencing the band-structure of the NCs, the SWIR sensitivity can be optimized by SiO2 content and H-2 gas component in the deposition atmosphere. Their role is not only changing the crystallization parameters but also to reduce the carrier recombination by passivation of NCs defects. The experiments indicate a limited composition dependent temperature range for GeSn NCs formation before beta-Sn phase segregation occurs. NCs with an average size of 6 nm are uniformly distributed in the film, except the surface region where larger GeSn NCs are formed. Spectral photovoltaic current measured on SiO2 embedded GeSn NCs deposited on p-Si substrate shows extended SWIR sensitivity up to 2.4 mu m for 15 at. % Sn in GeSn NCs. The large extension of the SWIR detection is a result of many factors related to the growth parameters and also to the in situ or ex situ annealing procedures that influence the uniformity and size distribution of NCs.

Among the rare-earth-free systems that are currently investigated in search for novel permanent magnet solutions for various applications, with special emphasis on the magnets required to operate in extreme conditions, the FePt binary system, where the tetragonal hard magnetic L1(0) phase can be formed by suitable microstructure processing via annealing, has been extensively studied. A variation of this system, the ternary FeMnPt system, has been also recently shown to exhibit good permanent magnet behavior due to the suitable formation of the L1(0) phase. In addition to be likely to form the L1(0) phase as its parent binary system, the ternary FeMnPt benefits from the reduced costs due to the reduced amount of Pt and may exhibit particular magnetic structure due to the influence of the antiferromagnetic Mn. In the present work, we have employed a mixed sputtering technique, based on the use of both elemental and compound target for developing L1(0) FeMnPt thin films with specific structural features that triggers better magnetic performances in terms of coercivity and maximum energy products. The as-obtained films have been thermally annealed and characterized by means of transmission electron microscopy, X-ray diffraction, Mossbauer spectroscopy, magneto-optic Kerr effect (MORE) and SQUID magnetometry. The aim is to correlate the Mn induced microstructural and lattice changes with the magnetic properties and to optimize the microstructure for an early formation of the ordered L1(0) phase and increased coercivity compared to the as-prepared, structurally disordered, face centred cubic initial state of the films.

The synthesis of semiconductor nanocrystals with controlled doping is highly challenging, as often a significant part of the doping ions are found segregated at nanocrystals surface, even forming secondary phases, rather than incorporated in the core. We have investigated the dopant distribution dynamics under slight changes in the preparation procedure of nanocrystalline ZnO doped with manganese in low concentration by electron paramagnetic resonance spectroscopy, paying attention to the formation of transient secondary phases and their transformation into doped ZnO. The acidification of the starting solution in the co-precipitation synthesis from nitrate precursors lead to the decrease of the Mn2+ ions concentration in the core of the ZnO nanocrystals and their accumulation in minority phases, until similar to 79% of the Mn2+ ions were localized in a thin disordered shell of zinc hydroxynitrate (ZHN). A lower synthesis temperature resulted in polycrystalline Mn-doped ZHN. Under isochronal annealing up to 250 degrees C the bulk ZHN and the minority phases from the ZnO samples decomposed into ZnO. The Mn2+ ions distribution in the annealed nanocrystals was significantly altered, varying from a uniform volume distribution to a preferential localization in the outer layers of the nanocrystals. Our results provide a synthesis strategy for tailoring the dopant distribution in ZnO nanocrystals for applications ranging from surface based to ones involving core properties.

Technologically relevant tetragonal/cubic phases of HfO2 can be stabilized at room temperature by doping with trivalent rare earths using various approaches denoted generically as bulk coprecipitation. Using in situ/ex situ X-ray diffraction (XRD), Raman spectroscopy, high-resolution transmission electron microscopy, and in situ/ex situ site-selective, time-gated luminescence spectroscopy, we show that wet impregnation of hafnia nanoparticles with 10% Eu oxide followed by mild calcination in air at 500 degrees C produces an efficient stabilization of the cubic phase, comparable to that obtained by bulk precipitation. The physical reasons behind the apparently conflictual data concerning the actual crystallographic phase and the local symmetry around the Eu stabilizer and how these can be mediated by luminescence analysis are also discussed. Apparently, the cubic crystal structure symmetry determined by XRD results in a pseudocubic/tetragonal local structure around Eu determined by luminescence. Considering the recent findings on wet impregnated CeO2 and ZrO2, it is concluded that CeO2, ZrO2, and HfO2 represent a unique case of a family of oxides that is extremely tolerant to heavy doping by wet impregnation. In this way, the same batch of preformed nanoparticles can be doped with different lanthanide concentrations or with various lanthanides at a fixed concentration, allowing a systematic and reliable investigation of the effect of doping, lanthanide type, and lanthanide concentration on the various functionalities of these technologically relevant oxides.

ZnO-CuxO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a CuxO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-CuxO core-shell nanowire arrays were investigated. Individual ZnO-CuxO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-CuxO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.

Fe-14Cr-0.4Ti-0.25Y(2)O(3) ferritic steels were produced by varying the amount of residual process control agent, PCA (ethanol), in the ball-milled powders and changing the spark-plasma-sintering, SPS, temperature. Near the-oretical density (99.3%), high Vickers hardness (501-920 HV, measured by applying a load of 100 g for 5 s) and fine grain size (26-36 nm), very stable against heating, can be achieved on ODS ferritic steels, consolidated from powders with a low amount of PCA and processing temperature in the range of 1000 degrees C-1100 degrees C. Additional grain refinement occurs near alpha -> gamma transition which is generated by the reaction of the traces of PCA with the ferritic matrix upon heating. High local temperatures and the evolved thermally activated processes, at the contact points between particles/at the particle surfaces during SPS-consolidation, were demonstrated to be the main factors responsible for improved densities and hardness. The role of PCA in the sintering, thermal and microstructure particularities and its impact on the quality of the final steel was thoroughly analysed throughout the work. (C) 2019 Elsevier B.V. All rights reserved.

Previous electron spin resonance investigations correlated with data from cathodoluminscence and photoluminescence measurements have shown that impurity ions consisting mainly of isotopes with zero nuclear moments are involved in the structure of the observed paramagnetic point defects. In the present microstructural and compositional investigation we demonstrate that oxygen, carbon and silicon impurity atoms exhibiting low natural content of isotopes with non-zero nuclear spin are indeed present in cBN crystallites selected from amber coloured BORAZON CBN400 and CBN 500 super abrasive powders, as well as in the black coloured BORAZON CBN1000 and CBN Type 1. It is also shown that aggregates of impurity atoms are present next to the extended cBN lattice defects, which could explain the non-uniform distribution of the electro- and opto-active impurities reported in a spectroscopy investigation.

The results of the present Q-band electron spin resonance (ESR) investigation on amber colored cubic boron nitride (cBN) crystalline superabrasive powder (BORAZON CBN400) offer further support to the hypothesis that impurity ions with high natural abundant zero nuclear spin isotopes, distributed non-uniformly, are involved in the structure of the observed paramagnetic centers. One could thus explain the absence of any hyperfine structure in the multifrequency electron spin resonance spectra of both presently and previously investigated cBN crystalline powders and single crystals. The scanning electron microscopy, cathodoluminescence and photoluminescence studies performed on single crystallites selected from the same cBN400 batch further confirm the presence of electro- and photo-luminescent active impurity related centers, non-uniformly distributed in the cBN crystallite host lattice. The observation of an intense and reproducible thermoluminescence spectrum, up to high radiation doses, attributed to several trapping centers involving impurities, is also reported here.

Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5-0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 mu C/cm(2) or 30.6 mu C/cm(2) after correction for leakage and parasitics, combined with good endurance reaching 10(5) cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance. (C) 2019 Author(s).