National Institute Of Materials Physics - Romania

To advance gas sensor technologies, it is essential to identify materials that exhibit both high selectivity and sensitivity. Here, we unravel the gas-sensing capabilities of indium sulfide (InS) nanosheets, particularly in relation to nitrogen dioxide (NO2) detection. Utilizing a synergistic approach that combines in situ and operando experimental methodologies with density functional theory calculations, we demonstrate that these nanosheets offer outstanding sensitivity toward NO2, characterized by a remarkably low detection threshold of 180 ppb at an operational temperature of 350 degrees C. This remarkable sensitivity is ascribed to the electronic charge redistribution around the Fermi level, facilitated by an oxygen-deficient In2O3-x surface layer that forms naturally when the InS surface is exposed to ambient conditions. A pivotal aspect of our investigation was the exploration of the influence of sulfur abstraction on these surface modifications. We demonstrate that sulfur abstraction plays a critical role in the formation and operational efficacy of the In2O3-x layer, thereby acting as a key element in the sensor mechanism. This unique surface chemistry not only amplifies the sensitivity to NO2 but also confers unparalleled selectivity over other gases and volatile organic compounds. Notably, this level of performance exceeds that of other 2D semiconductors and metal oxides, thus establishing InS nanosheets as an ideal platform for high-performance gas sensors suitable for demanding environments. Moreover, unlike many state-of-the-art sensor materials, InS-based sensors can withstand a wider variety of environmental conditions due to their superior water adsorption resistance.

This work presents the ability of WO3-based sensors to detect low traces of acetone, specifically within the range of 0.25-5 ppm, specific to the in -field atmosphere. The WO3 powder was synthesised through the hydrothermal method. Morpho-structural investigations showed a monoclinic structure and a good crystallization of the WO3 powder, containing well -grown and faceted grains along low -index crystallographic planes. The paste obtained by mixing the powder with propanediol was screen -printed as a thick layer onto commercial alumina substrates, obtaining the chemical sensors. A dynamic computer -controlled Gas Mixing System was utilized to ensure controlled airflow with variable relative humidity and acetone concentrations. The sensor response was explained based on physico-chemical equations, taking into consideration pre -adsorbed species of oxygen and water, both of which are relevant constituents of atmospheric conditions. The results highlight the applicative potential of WO3, having a good signal-to-noise ratio in relative humidity conditions up to 90% and a pronounced sensitive selectivity to acetone.

The outstanding properties exhibited by the p-type NiO nanostructures can be greatly affected by morpho-structural and defect characteristics with constructive or competing effects. We have conducted an in-depth study on NiO nanoparticles obtained by hydrothermal synthesis and submitted to various thermal treatments, to monitor the evolution of their structural properties and the effect of the thermal history on their CO sensing. Correlated electron paramagnetic resonance and analytical transmission electron microscopy investigations evidenced an amount of up to 1 % metallic nickel clusters close to surface in the NiO nanoparticles calcined at 400 degrees C and 500 degrees C for 8 h. Subsequent annealing in vacuum and in air of the sample calcined at 400 degrees C resulted in different size distributions and morphology of the NiO nanoparticles and an increase/decrease of the nickel phase, respectively. Comparative CO sensing tests on the two pristine samples and on the sample calcined at 400 degrees C and further annealed in air at 500 degrees C for 2 h showed an increase in the baseline resistance of the later due to the decrease of free charge carriers induced by the dissolution of the nickel clusters. The overall CO sensing results show a strong dependence on the samples thermal history.

In this work, the formation of the orthorhombic phase of ZrO2 together with the minor monoclinic phase were elucidated by X-ray diffraction and transmission electron microscopy. Moreover, oxidized W can be responsible for the formation of oxygen vacancies in the ZrO2 through oxygen scavenging. The ferroelectric properties of the W/ZrO2/W film capacitors were investigated through piezoresponse force microscopy (PFM) and polarizationvoltage measurements. A second-order phase transition from the polar orthorhombic phase to the non-polar tetragonal phase was observed. Density functional theory calculations confirm our experimental results and propose that oxygen vacancies are responsible for the Curie-Weiss temperature of 130 degrees C, significantly lower than the theoretical value for the bulk.

The development of new materials for short-wavelength infrared (SWIR) optical sensors is of high importance for the fast development of different applications, as, for example, Internet of Things, road safety, and pollution monitoring. Group IV SiGe provides more sustainable As-, Cd-, and Pb-free nanomaterials that are cheaper and ecologic and offer easy integration with CMOS technology. This Review is on Ge and SiGe quantum dots/nanocrystals (QDs/NCs) embedded in dielectrics for VIS-SWIR photodetection, in which we highlight and discuss photocurrent mechanisms, correlation of photodetection parameters and characteristics with crystalline structure, morphology and energy bandgap, and applications as photodetectors, optical sensors, phototransistors, and solar cells. The embedding matrix induces NC surface passivation, stress field, and nanocrystallization effects and brings specific advantages depending on the matrix material. SiGe NCs in oxides for VIS-SWIR sensing represents a niche domain, showing high photosensitivity (photocurrent) in SWIR up to 1.8 mu m at room temperature and 2 mu m at 100 K, deeper in SWIR than Ge. By alloying Ge with a small content of Si, NC thermal stability is much improved as the detrimental Ge fast diffusion in oxides is hindered and SWIR photosensing is enhanced due to light absorption in Ge-rich SiGe NCs.

The development of new materials for short-wavelength infrared (SWIR) optical sensors is of high importance for the fast development of different applications, as, for example, Internet of Things, road safety, and pollution monitoring. Group IV SiGe provides more sustainable As-, Cd-, and Pb-free nanomaterials that are cheaper and ecologic and offer easy integration with CMOS technology. This Review is on Ge and SiGe quantum dots/nanocrystals (QDs/NCs) embedded in dielectrics for VIS-SWIR photodetection, in which we highlight and discuss photocurrent mechanisms, correlation of photodetection parameters and characteristics with crystalline structure, morphology and energy bandgap, and applications as photodetectors, optical sensors, phototransistors, and solar cells. The embedding matrix induces NC surface passivation, stress field, and nanocrystallization effects and brings specific advantages depending on the matrix material. SiGe NCs in oxides for VIS-SWIR sensing represents a niche domain, showing high photosensitivity (photocurrent) in SWIR up to 1.8 mu m at room temperature and 2 mu m at 100 K, deeper in SWIR than Ge. By alloying Ge with a small content of Si, NC thermal stability is much improved as the detrimental Ge fast diffusion in oxides is hindered and SWIR photosensing is enhanced due to light absorption in Ge-rich SiGe NCs.

Pseudohexagonal Nb2O5 microcolumns spanning a size range of 50 to 610 nm were synthesized utilizing a cost-effective hydrothermal process (maintained at 180 degrees C for 30 min), followed by a subsequent calcination step at 500 degrees C for 3 h. Raman spectroscopy analysis unveiled three distinct reflection peaks at 220.04 cm(-1), 602.01 cm(-1), and 735.3 cm(-1), indicative of the pseudohexagonal crystal lattice of Nb2O5. The HRTEM characterization confirmed the inter-lattice distance of 1.8 & Aring; for the 110 plain and 3.17 & Aring; for the 100 plain. The conductometry sensors were fabricated by drop-casting a dispersion of Nb2O5 microcolumns, in ethanol, on Pt electrodes. The fabricated sensors exhibited excellent selectivity in detecting C2H5OH (Delta G/G = 2.51 for 10 ppm C2H5OH) when compared to a variety of tested gases, including CO, CO2, NO2, H-2, H2S, and C3H6O. The optimal operating temperature for this selective detection was determined to be 500 degrees C in a dry air environment. Moreover, the sensors demonstrated exceptional repeatability over the course of three testing cycles and displayed strong humidity resistance, even when exposed to 90% relative humidity. This excellent humidity resistance gas sensing property can be attributed to their nanoporous nature and elevated operating temperature.

To advance gas sensor technologies, it is essential to identify materials that exhibit both high selectivity and sensitivity. Here, we unravel the gas-sensing capabilities of indium sulfide (InS) nanosheets, particularly in relation to nitrogen dioxide (NO2) detection. Utilizing a synergistic approach that combines in situ and operando experimental methodologies with density functional theory calculations, we demonstrate that these nanosheets offer outstanding sensitivity toward NO2, characterized by a remarkably low detection threshold of 180 ppb at an operational temperature of 350 degrees C. This remarkable sensitivity is ascribed to the electronic charge redistribution around the Fermi level, facilitated by an oxygen-deficient In2O3-x surface layer that forms naturally when the InS surface is exposed to ambient conditions. A pivotal aspect of our investigation was the exploration of the influence of sulfur abstraction on these surface modifications. We demonstrate that sulfur abstraction plays a critical role in the formation and operational efficacy of the In2O3-x layer, thereby acting as a key element in the sensor mechanism. This unique surface chemistry not only amplifies the sensitivity to NO2 but also confers unparalleled selectivity over other gases and volatile organic compounds. Notably, this level of performance exceeds that of other 2D semiconductors and metal oxides, thus establishing InS nanosheets as an ideal platform for high-performance gas sensors suitable for demanding environments. Moreover, unlike many state-of-the-art sensor materials, InS-based sensors can withstand a wider variety of environmental conditions due to their superior water adsorption resistance.

Selective growth of 2D MoS2 layers on patterned substrates is highly desired for easy fabrication of devices. Selectively grown 2D MoS2 on Mo patterned substrates for the formation of intimate metallic contact was obtained by a Mo-CVD method in which MoO2 from an oxidized Mo pattern and S powder are the growth precursors. Mo films were deposited by magnetron sputtering on SiO2(300 nm)/c-Si substrates and patterned by photolithography techniques for obtaining Mo strips and finger contact structures, with the gap between the strips and finger varied from 5 to 20 mu m. The filling of the gap by selectively grown atomically thin MoS2 plates of 1-2 monolayers (MLs) was demonstrated by scanning electron microscopy and atomic force microscopy imaging. Field effect devices for the characterization of the photosensitivity of selectively grown MoS2 have been fabricated from finger contact structures. The dark current is drastically reduced from 10(-9) to 10(-13)-10(-14) A by varying the gate voltage from +7 to -7 V, showing the n-type semiconductor behavior of the selectively grown 2D MoS2. High photosensitivity of 10(5) (%) was obtained for 4.5 x 10(-4) mW/cm(2) at 650 nm wavelength illumination. The spectral responsivity reaches values of 15-25 A/W at 600 nm wavelength and shows an energy onset of 1.72-1.77 eV corresponding to about 2 ML MoS2. The carrier-trapping effect responsible for the slow part of the device response can be caused by structural defects and also by adsorbed molecules like in gas sensors.

SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxide (HfO2) matrix fabricated by using magnetron co-sputtering deposition at room temperature and rapid thermal annealing (RTA). The NCs were formed at temperatures in the range of 500-800 degrees C. RTA was performed to obtain SiGeSn NCs with surfaces passivated by the embedding HfO2 matrix. The formation of NCs and beta-Sn segregation were discussed in relation to the deposition and processing conditions by employing HRTEM, XRD and Raman spectroscopy studies. The spectral photosensitivity exhibited up to 2000 nm in short-wavelength infrared (SWIR) depending on the Sn composition was obtained. Comparing to similar results on GeSn NCs in SiO2 matrix, the addition of Si offers a better thermal stability of SiGeSn NCs, while the use of HfO2 matrix results in better passivation of NCs increasing the SWIR photosensitivity at room temperature. These results suggest that SiGeSn NCs embedded in an HfO2 matrix are a promising material for SWIR optoelectronic devices.