National Institute Of Materials Physics - Romania
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891. Effects of the Severe Plastic Deformation on the Magnetic Properties of Zr13Co87 Ribbons
Authors:
Popescu, B; Palade, P; Sofronie, M; Kuncser, A; Gurau, C; Gurau, G; Tolea, F
Published: , METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, DOI: 10.1007/s11661-021-06507-y
The influence of the severe plastic deformation via high-speed high-pressure torsion (HSHPT) on the structural and magnetic properties of the Zr13Co87 alloys is investigated. Moderate applied deformation promotes the growth of the rhombohedral hard magnetic phase leading to the increase of the sample's hardness and magnetic coercivity. A higher degree of deformation affects the samples morphology leading to a critical value of the grain size under which the exchange coupling of the soft phase is less effective. Additionally, it produces a random alignment of the anisotropy axes, which are both detrimental to the hard magnetic properties.
892. Argon pressure dependent optoelectronic characteristics of amorphous tin oxide thin films obtained by non-reactive RF sputtering process
Authors:
Ziani, N; Galca, AC; Belkaid, MS; Stavarache, I
Published: , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, DOI: 10.1007/s10854-021-05861-2
In this work, amorphous tin oxide thin films were deposited by non-reactive radio frequency magnetron sputtering. A ceramic SnO2 target was used, while different working pressures were employed. The target to substrate distance was fixed to 17 cm, and the substrate was not intentionally heated. The properties of SnO2 (thickness, refractive index dispersion, optical band gap, resistivity, free carriers concentration, carriers mobility, carriers majority type and their scattering time) have been inferred from spectroscopic ellipsometry, conventional UV-Vis spectroscopy and specific Hall electrical measurements. Thickness and refractive index are slightly dependent on the deposition conditions, while the optical band gap, free carriers concentration and their mobilities are changing from sample to sample. The evolution of the optical band gap and carriers concentration is correlated to the active defects concentration. Amorphous SnO2 films grown at 0.4 Pa have the lowest resistivity of 0.86 Omega cm, a carrier concentration of 1.05x10(18)cm(-3) Vs. The average optical transmittance in visible spectrum is 76%.
893. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors:
Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML
Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e
894. Chalcogenide Science in Romania
Authors:
Lorinczi, A; Badica, P; Botila, T; Ciurea, M; Velea, A; Popescu, A; Socol, G; Antohe, S; Nedelcu, N; Sobetkii, A
Published: , , DOI: 10.1002/pssb.202000284
Almost six decades ago, in Romania a small group of physicists begun to study chalcogenide compositions, motivated primarily by the desire to understand the phase-change phenomenon in these materials, discovered recently, at that time, by Stanford R. Ovshinsky. It took not too long for them to realize the challenges these materials set to the research. With newcomers to the field, the research was broadened. In some cases just for basic research, to model, and to understand the chalcogenide materials, whereas in other cases, the applicative potential was revealed and used. Herein, the evolution of the field of these somewhat exotic materials is followed, listing the main contributions done in Romania, both in basic and applied research.
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