National Institute Of Materials Physics - Romania

Fundamental and third harmonic ac susceptibility measurements as a function of temperature T, ac magnetic field, and dc magnetic field have been performed on Bi(Pb)SrCaCuO/2223 bulk samples consisting of both Bi2Sr2Ca2Cu3O10+delta (2223) and Bi2Sr2CaCu2O8+delta (2212) phases. Since the chi(1)''(T) peak corresponding to the losses in the weak links between the grains shifts rapidly to lower T and its amplitude is strongly suppressed with increasing the dc magnetic field H-dc, the other peaks related to the losses in the grains become visible. For the samples consisting of single phase 2223, these intragranular peaks are situated near 38 K, 58 K, and 80-88 K (depending on the sample), whereas for the samples consisting of single phase 2212, they are situated near 20 K, 43 K, and 77 K. For H-dc >= 1 kOe, the temperature positions of the intragranular peaks are weakly field dependent. This shows that the transition line determined from the loss peaks behaves like the melting line in two-dimensional (213) systems. Also, as the field increases, the amplitude of the loss peaks can decrease up to their disappearance, suggesting a layer decoupling process. In this way, we show that, above a crossover field of similar to 1 kOe, the vortex lattice in the superconducting grains of polycrystalline samples reproduces the behaviour of the vortex lattice in a quasi-2D object consisting of a set of separated "thin films" with one-, two-, and three-effective-layer thicknesses. For the samples consisting of both 2223 and 2212 phases, three additional peaks were observed, situated near 28 K, 50 K and 75-80 K (depending on the sample). These peaks were attributed to the regions in which the 2212 and 2223 layers alternate. (c) 2007 Elsevier B.V. All rights reserved.

Scanning Hall probe microscopy has been used to demonstrate the manipulation of pancake vortices by rotating the Josephson vortex lattice in Bi(2)Sr(2)CaCu(2)O(8+delta) single crystals in the interacting crossing lattices regime. Creation of one-dimensional pancake vortex chains trapped on Josephson vortices, and the subsequent rotation of the chains were realized by independently controlling magnetic fields in three orthogonal directions. The anisotropy parameter determined from the in-plane distances between vortex chains in various in-plane fields is consistent with commonly accepted values.

Hg-based multi- and super-multi-layered cuprates HgBa2Can-1CunOy (Hg:12(n-1)(n)) (n >= 4) are composed of the charge reservoir layer (CRL) HgBa2Ox, and of CuO2 planes: outer planes (OP) with pyramidal oxygen coordination and inner planes (IP) with square oxygen coordination, with different charge distribution. This fact gives rise to very interesting phenomena, like coexistence of superconductivity (SC) in OPs with antiferromagnetism (AF) in IPs in Hg:1245. The dependence of T-c on the number n of CuO2 planes is also interesting: for n increasing from 4 to 5 and to 6, T-c decrease from 125 to 108 and then to about 103 K; further increase in n keeps T-c constant at about 103 K. In Hg:1245 we show that the AF ordering at T-N of 60 K has no influence on vortex dynamics, and there is a quite robust c-axis supercurrent. Vortex melting lines of various samples showed that Hg-based multi- layered cuprates (n = 4, 5) behaves in the usual way (increasing n resulted in decrease of Josephson coupling (JC) and a less sharp melting line) and are well described by the usual anisotropic GL-based theory. Samples with n >= 6 have all the same melting line, suggesting that, in this case, the short-range JC becomes much less important than the long-range magnetic coupling (MC). However, since the JC between two pancakes in OPs of adjacent unit cells (pancakes separated by the thin CRL) is large, we suggest that the vortex matter in Hg-based super-multilayered cuprates is composed of magnetically-coupled pancake-vortex-molecules.

We observed two dissipation peaks in the field cooled AC susceptibility measurements on aligned multilayered cuprate Superconductor, (Cu,C)Ba2Ca2Cu3Oy [(Cu,C)-1223], and demonstrated that it is the direct experimental indication of the two-component vortex matter in the multilayered cuprates. We propose that, the second loss peak at lower temperature is due to the additional degree of freedom of the rotation of 'vortex molecule' composed of two fractional vortices, originated at two components, mediated by an i-soliton bond. To probe the dynamics of this vortex molecule, we measured frequency dependence of AC susceptibility response on aligned crystallites of (Cu,C)-1223 at different temperatures and DC fields. In second peak region, it gives resonance peak. The observed frequency dependence patterns of chi ''(T), for 0.5 T H-DC, are rescaled with the resonating frequencies and show tail at low frequency region indicating that the dissipation is due to rotation and twisting of vortex molecule. The temperature dependence of the average relaxation time shows that the vortex molecule rotation/twisting glass state follow critical slowing down process.

Field-assisted-sintering technique (FAST) has been employed to obtain polycrystalline MgB2 samples, pristine and doped with 5 mol % SiC and B4C, using commercial MgB2 powder. The mass density of the samples is around 90% of the theoretical value. The response in magnetic field shows that the upper critical field and the irreversibility field are depressed by comparison with pristine MgB2. The latter has an upper critical field H-c2=14.37 T close to the values reported for the single crystals. Scaling analysis of the field dependence of the pinning force suggests that both addition of SiC and B4C stabilizes two well defined pinning regimes in FAST-processed MgB2. At low temperatures, T < 24 K (H <= 5T), the pinning occurs at the grain boundaries whereas at higher temperatures there is a mixed pinning. These effects are supposed to be the combined result of relatively low level of C diffusion into the lattice of MgB2, specific features in formation of the grain boundaries during FAST processing and the influence of the added materials on morphology. At high fields (above 8.5T) and 4.2K, doped samples are superior to the pristine one from the critical current density viewpoint.

Materials may show anisotropic properties on different crystal directions and this is also the case of High Temperature Superconductors (HTS). To take advantage of the materials anisotropy one concept of interest is "orientation engineering" in thin films. This can be realized through the control of the film-substrate lattice relationship. Some examples in this regard are presented in this work and through comparative analysis we try to evaluate the viability of this approach and of he entcountered problems. It is expected that in the future this approach will generate new nano composite materials with new properties and effects leading to development of new devices with new or improved functionality.

Room temperature mechanical treatment consisting of multiple torsion loadings (named pre-torsion) was applied to Nb3Sn composite wires with different architecture to reduce thermal residual compressive strain experienced by the superconducting Nb3Sn filaments. Due to this effect all investigated wires have shown enhancement of the critical current density, I-c up to 56% at 15T and 4.2K. Enhancement of I-c was larger for the reinforced wires than for the wires without reinforcement suggesting that reinforcement is useful in strain relaxation during pre-torsion. The best results were obtained when the position of the reinforcement was located in the outer region of the wire. Pre-torsion is similar or more efficient than cycles of bending loadings (named pre-bending). For pre-torsion important parameter is rotation angle per length of the wire and optimum conditions for short wires are valid for long wires. Uniformity of Ic along the length of a 99cm wire after pre-torsion was within +/-2.1A.

ac susceptibility measurements were performed on pure and SiC-doped MgB2 prepared by field assisted sintering technique in the temperature range between 5 and 50 K. The activation energy for flux-creep U for both samples was determined at dc-fields of 0, 0.5, and 5 T, respectively, from the frequency dependence of the imaginary part of the ac-susceptibility chi '' data measured in the range 17-9997 Hz. It was found that at 0 and 0.5 T, the activation energy of the SiC-doped sample is almost half the energy of the pristine sample whereas at 5 T the activation energies of the two samples become almost equal. A similar behaviour show the H-p(T) lines as obtained from susceptibility data in the range 0-9 T. For fields lower than 7.5 T, the H-p field of the doped sample is lower than for the undoped MgB2. At similar to 7.5 T, the H-p(T) for SiC doped MgB2 crosses over the H-p(T) of pure MgB2 and for higher fields the doped samples exhibits a higher irreversibility H-p. This field dependence was extracted from the evolution of the. chi(1)''(T) data. This behaviour is a consequence of the morphology of the sample with a large spread in grain size.

Superconducting c-axis thin films of Bi2Sr2Ca2Cu3O10 (Bi-2223) were grown by MOCVD on (001) and (110) MgO substrates. Films on both substrates show, as revealed by AFM investigations, similar morphology composed of regular rectangular grains and relatively low roughness of about two or three half c-axis unit cell order. AFM images also suggest that films might have in-plane epitaxy. The films have zero resistance critical temperatures of 95.1K for the (001) MgO substrate and 75K for the (110) MgO substrate, respectively. Considering very large films-substrate lattice mismatch between (110) MgO and (ab)-plane of the superconducting phase the growth of indicated films is a surprise.