National Institute Of Materials Physics - Romania

Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron sputtering, at a temperature of similar to 50 degrees C. Characteristics of a typical field effect transistor with SiO2 gate insulator, grown on highly doped silicon, and of the PZT-based FeFET were compared. It was proven that the FeFETs had promising performances in terms of I-on/I-off ratio (i.e., 10(6)) and IDS retention behavior.

500 nm thick silver-zinc oxide (Ag-ZnO) films were grown by electron beam evaporation on 316 L stainless steel (SS) substrate and on 150 nm thick Inconel 600 (IN600) interlayer. The films were annealed in air at 500 degrees C for 1 h. The morphological and structural analyses confirmed smooth, uniform, homogeneous and crack-free surfaces with nanocrystalline grain size for all films. The elemental composition analysis yielded up to 0.6 wt% Ag in Ag-ZnO/IN600 films. The ultraviolet-visible spectroscopy and Raman spectroscopy along with mechanical and electrochemical tests revealed improved optical, scratch resistance and electrochemical properties of Ag-ZnO/IN600 films than Ag-ZnO films. Ag-ZnO/IN600 and Ag-ZnO films exhibited higher antibiofilm activity against Staphylococcus aureus, Pseudomonas aeruginosa and Candida albicans pathogens, comparatively with IN600 films and SS substrate. The superior functional properties of Ag-ZnO/IN600 films suggest their potential for practical applications as antimicrobial and robust coatings on SS surface-contacting medical devices with limited exposure.

Highly defected tubular SiO2 is found to outperform the activity of TiO2-P25 and the SiO2-TiO2 composite in photocatalytic H-2 generation from methanol-water solution under simulated solar light AM 1.5. The enhanced performances of SiO2 come from the particularities of the reaction mechanism and ROS (reactive oxygen species) generation. The SiO2 exposed to light generates solely O-1(2) (singlet oxygen). The TiO2-P25 produces uniquely large quantities of OH radicals whereas the formation of O-2(-) is evidenced only over SiO2-TiO2, along with small amounts of OH. The TiO2 works as a photocatalyst by intermediation of OH radicals. In contrast, the organic substrate is activated on the surface of SiO2 by the intra-band gap, isolated, surface quantum defects. Distinct reaction mechanisms, involving the participation of photogenerated charges and ROS, are proposed. The material-related ROS production can be of great practical importance in fields such as biology (germ inactivation), medicine (photodynamic therapy by O-1(2)), and synthesis of oxygenated organic compounds of great added value.

Chalcogenide amorphous materials, such as GeTe, are known to exhibit deposition dependent optical and structural properties. The formation of a single and homogeneous amorphous GeTe (a-GeTe) phase is questionable since the deposited films can be mixtures of monoelemental nanoclusters. In this work, we employed two deposition techniques, pulsed laser deposition from a polycrystalline GeTe target and co-sputtering from two distinct Ge and Te targets, respectively, to obtain a-GeTe films. To improve the homogeneity of the amorphous phase obtained by magnetron sputtering, the substrate temperature was varied from room temperature up to 180 degrees C. The samples were investigated by X-ray diffraction, X-ray reflectometry, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. It was found that the film mass density, optical bandgap, refractive index and absolute reflectivity become progressively larger with increasing substrate temperature, due to the minimization of voids fraction and the number of dangling bonds in the amorphous structure. Moreover, X-ray photoelectron spectroscopy results prove the formation of Ge-Te bonds and therefore of the GeTe alloy at the optimal substrate temperature of 180 degrees C. This study reveals the importance of optimizing the deposition conditions for obtaining a specific amorphous phase, which enables the atomic rearrangements responsible for fast phase-change needed in memory applications.

Ru@MNP-MWCNT catalysts were obtained via functionalization of nanostructured carbon-based carriers (ie, MWCNT) with base molecules (ie, 2-aminophenol and ethylenediamine) followed by the complexation with RuCl3. These structures demonstrated a highly efficient behavior for the selective wet oxidation of levulinic acid and glucose to succinic acid. However, to ensure an easy recovery and high recyclability the MWCNTs nanotubes were modified by incorporation of super-paramagnetic Fe3O4 nanoparticles into porous structure. Besides the catalytic performances the resulted composites showed a good mechanical resistance.

Zinc- (Zn) doped hydroxyapatite (HAp) were prepared by sol-gel method. Zinc-doped hydroxyapatite (ZnHAp) and HAp were analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Rietveld analysis revealed that the HAp and 7ZnHAp powders obtained by sol-gel method have a monophasic hydroxyapatite structure belonging to the P6(3/m) spatial group. The results obtained from the ultrasound characterization of HAp and ZnHAp are also presented in this study. The effect of zinc concentration on properties that were deduced from ultrasonic measurements are studied in the case of a significant zinc concentration (x(Zn) = 0.07). From the values of the ultrasonic waves velocities were determined by the pairs of elastic coefficients of the suspensions (Young modulus E, Poisson coefficient nu), which have proven to be similar to those determined by other authors.

In this study, we compared the structural, morphological, and optical properties of a series of Zn1-xFexO (x = 0.00, 0.01, and 0.03) powders synthesized via a hydrothermal route with and without cetyltrimethylammonium bromide as a cationic surfactant. Our results highlighted the critical effects of the surfactant and the iron concentration on the structure, morphology, and optical properties of ZnO. X-ray diffraction, Mossbauer spectroscopy, and X-ray photoelectron spectroscopy analyses indicated the presence of a single phase comprising ZnO with a hexagonal wurtzite structure in all samples and a single oxidation state (+3) for the iron (Fe3+) that replaced Zn2+ in the ZnO structure. Morphological investigations by scanning electron microscopy showed that the surfactant and Fe3+ dopant greatly affected the shape of the ZnO grains, which varied between sheets and rod-like flowers. We found that the morphological and photocatalytic properties of the two series of samples comprising iron-doped ZnO with and without the surfactant were in opposition. We propose a possible growth mechanism for the ZnO polycrystalline grains in the presence of the Fe dopant and/or surfactant. The photocatalytic properties increased for the samples prepared with surfactant as the iron content increased, which was confirmed by ultraviolet-visible reflection measurements. The photocatalytic activities of the samples prepared without surfactant decreased in both the ultraviolet and visible spectral regions as the iron content increased in the samples.

We investigate the effect of the nature of the substrate and the bottom interface on the out-of-plane polarization orientation of ultrathin (10-nm) lead zirconate titanate (PZT) thin films of (001) orientation by photoelectron spectroscopy of samples without surface contamination. The substrate nature is varied between insulator (strontium titanate, STO) and semiconductor (Nb-doped STO, STON) and finally to a metal with a work function lower than that of PZT (strontium ruthenate, SRO). Outward polarization is obtained for PZT/STON(001) and inward polarization is obtained for PZT/STO(001) and PZT/SRO(001). Explanations are given for all these typical cases, the main elements being charge accumulation for compensation of the depolarization field, self-doping of PZT films, and the interface electric field driving the orientation of the polarization of the ferroelectric films. We find p-type self-doping is correlated with the inward polarization, and the driving field is formed between a negatively charged region with negatively ionized acceptors near the interface with the substrate and the p-type degenerate region with holes accumulated inside, toward the surface. This mechanism may be reversed under the assumption of n-type self-doping, positively ionized donors near the interface, and accumulated electrons toward the surface in the case of an interface with a substrate with a higher work function, being in line with recent data (PZT/Pt or BaTiO3/SRO).

InGeNi ohmic contacts on n-type semi-insulating GaAs(110) cleaved surfaces were fabricated. Cleaving semiconductor single crystal ensures the obtaining of semiconductor surfaces almost ideal in terms of chemical purity and stoichiometry. The chemical depth profile of metallic layer was investigated and revealed through multiple alternating steps of Ar+ etchings and XPS (x-ray photoelectron spectroscopy) measurements. The metallic layers made of alloy of Ge, In and Ni (60 nm Ge, 60 nm In and 10 nm Ni), were obtained by thermal evaporation on cleaved surfaces in a high vacuum facility, followed by a thermal annealing at 430-450 degrees C for 5 min. Twelve etching sessions were required until the metal/semiconductor interface has been reached. A total of 14 etchings steps were performed during the experiment, a layer with a thickness of 140 nm being removed from the surface. The atomic concentrations of the constituent chemical elements were determined. In3d, In4d, Ga3d, Ga2p, As3d, As2p, Ni2p(3/2), Ge3d, O1s and C1s spectral lines were recorded and chemical bonds within the layer were analyzed from the fittings. The formation of InxGa1-xAs type compounds and of an intermediate semiconductor layer rich in Ge atoms at the interface was highlighted. X-ray detectors InGeNi/GaAs/Al and InGeNi/GaAs/Ti were fabricated with ohmic contacts based on this contacting scheme and Schottky interfaces prepared also by evaporation on cleaved edges. Electrical characteristics have been investigated and key diode parameters determined - ideality factor, Schottky barrier height, series resistance. Detection capabilities of these devices were studied in an x-rays flux, provided by a Co anode x-ray source.

Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a significant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few 10(14) cm(-2) and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280 degrees C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The difference of ionisation energy of an isolated point defect and a fully occupied cluster, Delta E-a is extracted from the TSC data. For the VOt (vacancy-oxygen interstitial) defect Delta E-a = 0 is found, which confirms that it is a point defect, and validates the method for point defects. For clusters made of deep acceptors the Delta E-a values for different defects are determined after annealing at 80 degrees C as a function of electron energy, and for the irradiation with 15 MeV electrons as a function of annealing temperature. For the irradiation with 3.5 MeV electrons the value Delta E-a = 0 is found, whereas for the electron energies of 6-27 MeV Delta E-a > 0. This agrees with the expected threshold of about 5 MeV for cluster formation by electrons. The Delta E-a values determined as a function of annealing temperature show that the annealing rate is different for different defects. A naive diffusion model is used to estimate the temperature dependencies of the diffusion of the defects in the clusters.