National Institute Of Materials Physics - Romania

We intend to prepare periodic multilayered structures for photonic applications. With this goal we have performed a study of some characteristics of SiO (x) -P2O5 films deposited by the sol-gel method on glass and ITO (InSnO (x) )-coated glass. The as prepared films were annealed to different temperatures (150 and 200 degrees C). The chemical composition of the samples was determined by X-ray Photoelectron Spectroscopy (XPS). The XPS results revealed the presence of P in the as-deposited films. The structural an optical properties were examined by Fourier Transform Infrared Spectroscopy (FTIR), Spectroellipsometry (SE) and UV Transmission Spectroscopy. IR spectra of the deposited films attest the interaction of an amorphous SiO2 with the H3PO4 used as a P-precursor. Refractive indices for individual SiO (x) -P2O5 determined from SE measurements show a densification of the layer structure with the increasing temperature in the thermal treatment. The UV transmission spectra revealed a lower transmission for the sol-gel SiO (x) -P2O5 films as compared to ITO/glass substrate. AFM images proved the densification of the films with annealing in agreement with the ellipsometric results.

Titanium dioxide thin films prepared by sol-gel method and deposited on p-Si (111), n-GaAs (100) and glass have been investigated by Raman spectrometry and photoluminescence analysis. The films were annealed in the temperature range (500-800)degrees C in air. Raman scattering studies reveal the presence of Raman active modes in the calcinated TiO2 films related to anatase phase of titania. The photo luminescence spectrum presents prominent red shifted peaks (e.g. at 400 nm for TiO2/glass), where the maximum is related to the presence in titania films of defect levels corresponding to oxygen vacancies.

X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) have been used to investigate the elemental composition, chemical and electronic state of elements that exist within the Herastrau Lake (Bucharest, Romania) sediments. XPS spectra were obtained by irradiating the sediment samples with an Al source of X-rays (1486.6 eV). A very broad peak at 165-190 eV corresponds to sulfur oxides, sulfate and sulfite ions and sulfur hexafluoride. The measurements indicate metal oxides: (Al2O3, Fe2O3) at 528-531 eV, SiO2 at 533 eV, phosphates, nitrates at 531-533 eV, silicates at 532-533 eV, CaO, CaCO3 and CaS at 346-347 eV, CaSo(4) at 348 eV, Ca(NO3)(2) at 349 eV and slight traces of NH3. A very intense peak at 784 eV also appears due to CoSO4. The analysis of Electron Spin Resonance (ESR) spectra revealed an additional free radical peak in the center of Mn2+ sextet, at a g = 2.0038, attributed to SO3- species as well a very intense and broad signal due to Fe3+ ions.

Phosphosilicate films with 90%SiO2-10%P2O5 molar composition, derived from tetraethoxysilane as SiO2 precursor and triethylphosphate, triethylphosphite or phosphoric acid as P2O5 precursors were prepared using the sol-gel method. The films were deposited on glass and ITO coated glass supports. The influence of the type of P2O5 precursor, type of substrate and of the thermal treatment (200, 300 and 500 degrees C) on their structure and properties was studied. By spectroellipsometric and XPS measurements the high vaporization of the phosphorous during the densification of the films by thermal treatment was noticed when alkoxide were used, underlying that the mentioned precursors are not recommended for thin phosphosilicate films preparation. The phosphoric acid that forms chemical bond with silica network during the sol-gel process lead to better incorporation of P in the silica network as compared to the P-alkoxides.

Results are reported on the characterization of 200-250 nm thick TiO(x) transparent films grown at temperatures of 150 degrees C and 500 degrees C by reactive pulsed-laser ablation of a metallic Ti target under 0.13-13.3 Pa oxygen atmosphere. Film structure and composition were investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The samples deposited at 150 degrees C reveal a mixture of amorphous TiO(2) and Ti(2)O(3), irrespective of oxygen pressure. The O:Ti atomic ratio fluctuates in their surface around 1.83 for oxygen pressure ranging between 0.13 Pa and 2.66 Pa. The samples deposited at 500 degrees C feature different characteristics, as a function of oxygen pressure: (a) below 2.66 Pa of O(2) the films contain a mixture of significant amount of anatase and rutile TiO(2) phases, along with titanium suboxides; (b) above this threshold, the rutile phase vanishes, the anatase TiO(2) phase remaining dominant along with small amounts of nanocrystalline suboxides. The size of the anatase nanocrystallites decreases with the increase of oxygen pressures. The samples deposited at 500 degrees C feature a slight improvement of surface stoichiometry, from roughly TiO(1.8) to TiO(1.9). The films deposited at high substrate temperature and oxygen pressure are highly hydrophilic. (c) 2006 Elsevier B.V. All rights reserved.

Thin layers of Fe are deposited at 100 degrees C on GaAs(1 0 0) and InAs(1 0 0) substrates by molecular beam epitaxy. These structures are characterized by photoelectron spectroscopy (PES), in order to derive their chemical composition and interface reactivity, and by X-ray magnetic circular dichroism (XMCD) recorded at room temperature in remanence mode, in order to derive the atomic magnetic moment of Fe. As previously reported, Fe/GaAs(1 0 0) exhibits a strong and complicated interface reactivity, with considerable intermixing of Fe with Ga and As. Unlike the above structure, Fe/InAs(1 0 0) exhibits a much lower interface reactivity, whereas the Fe magnetic moment increase is much more pronounced as function of Fe thickness. The total atomic ferromagnetic moment reaches at room temperature 2.0 Bohr magnetons by about I nm Fe effective thickness, which is almost the Fe bcc bulk value (2.2 Bohr magnetons). The novelty of the present study is a direct comparison of the two interfaces prepared and measured in the same experimental arrangements. (c) 2006 Elsevier B.V. All rights reserved.

The hydrophilicity of RF sputtered thin films of: (a) pure TiO2 and (b) TiO2 doped with 0.3% Ce, 0.4% Nb, and 0.4% N (atomic percents) was investigated macroscopically by measurements of the contact angle between water and film surface. The results are discussed in terms of the connection of the hydrophilic and photocatalytic properties of the materials with their structure, morphology and optical characteristics. The 280 nm thick films were deposited on optical glass substrates at 250 degrees C. Film structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy. The surface roughness was derived from atomic force microscopy and ellipsometric data. The contact angle of de-ionized water with film surface was monitored during photo-activation and after irradiating with near-UV light. The surface super-hidrophilicity of all the investigated samples decays, when samples are kept in darkness for 48 h after irradiation. The hydrophilic behavior of the doped TiO2 thin films is discussed in terms of the effects of surface roughness, phase transformations enhanced by doping and charge carrier recombination. (c) 2006 Elsevier B.V All rights reserved.

Epitaxial Pb(Zr,Ti)O-3 (PZT) thin films with thicknesses in the range of 50-200 nin and with 0.2 Zr/(Zr + Ti) ratio, were grown by pulsed laser deposition (PLD). The substrates used for PLD deposition are single crystalline 0.5% Nb-doped (1 0 0)SrTiO3 (STON). SrRuO3 (SRO) thin films were deposited as bottom and top electrodes in order to have minimum structural misfit, to insure on one side high quality growth, and on the other side to minimize the influence of the ext,ended structural defects. Structural and electrical characterization was performed. The epitaxial PZT films are c-axis oriented and have an average roughness of 0.4 nm. The ferroelectric behavior was proved in all investigated films by the presence of the hysteresis loops and by the butterfly shape of the capacitance-voltage (C-V) characteristics. The ferroelectricity was present even in the samples with relative high leakage currents, down to a thickness of 50 nm. These results are essential when small thickness is needed for miniaturization of ferroelectric devices using PZT. (c) 2005 Elsevier B.V. All rights reserved.

Near surface disposal is considered a suitable option for the disposal of short-lived low and intermediate level waste (LILW) containing radionuclides which decay to insignificant radiation levels within a few decades or centuries. LILW containing limited concentrations of long-lived radionuclides may also be disposed of in near surface facilities. The main radionuclides in short lived LILW are Cs-137 and Sr-90 and therefore, a period of 300 years for the post-closure institutional controls would correspond to about ten half-lives of these radionuclides. The longer-lived radionuclides, such as C-14, I-129, Tc-99 will continue to be released even after that period due to the engineering barriers degradation. The paper presents the post closure radiological impact of LIL waste disposal due to the C-14, one of the long life radionuclides presented in the LILW generated at Cernavoda Nuclear Power Plant.

X-Ray Photoelectron Spectroscopy (XPS) analysis was performed on Ti/oxidized GaAs. This interface is prepared by chemical etching in a mixture of reagents, followed by a vacuum deposition of a nanometer Ti layer. The surface sensitivity of XPS (typically 40-100 angstrom), makes the technique ideal for the measurements of oxidation states and oxide layer thickness on III-V compounds. The study of Ti/oxidized GaAs put into evidence a lack of stoichiometry at the semiconductor surface due to the presence of a volatile element (As). At the interface Ti/Oxide/n-GaAs common oxides are present: Ga2O3, As2O3 and As2O5, together with titanium oxide. The XPS spectra recorded on the sample surface sputtered with 5 keV Ar+ ions (in two steps: t = 15 min, t = 45 min) were analyzed using SDP subroutines program facilities. The As signal at the interface after t = 15 min plasma etching is related to GaAs, As2O3 and over 40% from a GaAs oxidation complex or due to intermetallic oxide of Ti. After the last plasma etching at the surface of GaAs the stoichiometry was demonstrated: the signal of As and Ga arises commonly from GaAs. It was remarked a broader titanium line profile, which arises from titanium oxide and from different intermediate states at the interface.