National Institute Of Materials Physics - Romania

In this work, we investigated the influence of reduced graphene oxide (RGO) on the electrical performances of ZnO/Ag multilayer transparent conductive electrodes. RGO flakes were successfully laser transferred by matrix assisted pulsed laser evaporation (MAPLE) using frozen targets obtained from suspensions of commercially chemically RGO powder dispersed in dimethyl sulfoxide (DMSO). The main deposition parameters such as RGO concentration, laser fluence, number of the laser pulses and deposition pressure were varied to identify the optimal morphological and optical characteristics. The laser transfer conditions for the RGO structures with the best transmittance were further employed in preparation of RGO/Ag/ZnO multilayer transparent conductive electrodes (MTCE). Thus, the MAPLE deposited RGO structures were covered with metal (Ag) by vacuum thermal evaporation (VTE) and subsequently with metal oxide (ZnO) by radio frequency magnetron sputtering (RF-MS). In comparison to the optical and electrical properties of a ZnO/Ag/ZnO reference structure, the results emphasize that the RGO/Ag/ZnO are featured by a similar transmittance (similar to 82-85 %) and improved sheet resistance (similar to 10.6 Omega/square, meaning up to 2-fold smaller).

When used as the active layers-either as a light absorber in photovoltaic devices or as an electroluminescent material in light-emitting devices-lead-free perovskites significantly impact the performance of optoelectronic devices. This study focuses on antimony-based perovskites, which are promising for lighting applications. These types of perovskites enable the formation of self-trapped excitons (STEs) with higher dissociation energy than lead-based perovskites, which generate excitons with lower dissociation energy. The (CH3NH3)3Sb2I9 crystals are synthesized using two methods, resulting in distinct spatial configurations - dimer and dimer/layered mixtures, each exhibiting unique structural and spectroscopic properties, as revealed by comprehensive multi-parametric complementary analyses. Their emissive properties underscore the efficiency of the STE photoluminescence, driven by electron-phonon interactions and influenced by Sb-Sb distances in (CH3NH3)3Sb2I9 powder, whether dispersed in polymethyl-methacrylate or solution. The phase transition from monoclinic to hexagonal (dimer) and trigonal (layered) structures enabled the tuning of the optical properties in direct correlation with the structural and electrical features. The photoluminescence behavior of the STEs, analyzed in conjunction with the Raman spectroscopy, elucidates the dynamic process of the electron-phonon coupling effects in the dimer (face-capping Sb-I octahedra) and layered (corner-sharing Sb-I octahedra) crystallographic structures.

Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an inplane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K. The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. Thus, the magnetic field controls the relative orientation of the magnetization of the metallic ferromagnetic electrodes, that leads to different magnetoresistance states. The orientation and the magnitude of the electric field controls the orientation of the polarization of the guanine ferroelectric barrier, that leads to different electroresistance states, respectively. Moreover, we have observed a strong interfacial coupling of the two parameters. Consequently, positive and negative magnetoresistance hysteresis loops corresponding to spin rectification effects and non-hysteretic (erased) resistive states are manipulated with the electric field by switching the orientation of the electrical polarization of the organic ferroelectric.

By experiment we evaluated the longitudinal magnetostriction on cylindrical samples of MnZn ferrite. Starting from the idea that the magnetostriction phenomenon is closely related to the magnetization phenomenon of the ferromagnetic sample, by plotting the magnetostriction curve it is possible to extract the magnetization curve of the ferromagnetic material and to evaluate the saturation magnetization of the material and the demagnetizing factor of the sample. At the same time, the paper suggests a way to study the dynamics of the movement of the magnetic domain walls in the sample, by examining the resonance curve at each point on the magnetization curve.

Laser thin layer deposition technologies were applied to develop organic heterostructures on flexible transparent conductive electrode (TCE). Flexible substrates such as flexible glass (FG), polyethersulfone (PES), amorphous polyethylene terephthalate (PET-A) and biaxially-oriented polyethylene terephthalate (PET-B) were employed to assess the influence of the substrate type on the optical and electrical characteristics of the organic devices. For comparison reason, the organic heterostructures were fabricated on rigid glass substrate and commercially available indium tin oxide (ITO)-coated PET. Hence, flexible and rigid glass substrates were coated with ITO film by pulsed laser deposition (PLD) at low fluence, subsequently a blend layer based on zinc phthalocyanine (ZnPc) and N, N '-bis-(1-dodecyl)perylene-3,4,9,10 tetracarboxylic diimide (AMC14) being deposited by matrix assisted pulsed laser evaporation (MAPLE) on the TCE film. The investigations evidenced that the roughness and the substrate type can strongly influence the properties of the ITO layer deposited by PLD as well as the optical and electrical characteristics of the organic heterostructures based on the blend layer deposited by MAPLE. Thus, the lowest roughness (0.8 nm) and the best Hall mobility (41.9 cm2/V center dot s) were achieved for ITO coatings deposited on flexible glass substrate. Also, the highest current density value (9.3 x 10- 4 A/cm2 at 0.5 V) was reached for the organic heterostructures fabricated on this type of flexible substrate.

In this work, three methods for the synthesis of composites based on poly(ortho-toluidine) (POT) and WS2 are reported: (a) the solid-state interaction (SSI) of POT with WS2 nanoparticles (NPs); (b) the in situ chemical polymerization (ICP) of ortho-toluidine (OT); and (c) the electrochemical polymerization (ECP) of OT. The preparation of WS2 sheets was performed by the ball milling of the WS2 NPs followed by ultrasonication in the solvent N,N'-dimethyl formamide. During the synthesis of the POT/WS2 composites by SSI and ICP, an additional exfoliation of the WS2 NPs was reported. In this work, we demonstrated the following: (a) the ICP method leads to POT/WS2 composites, which contain repeating units of POT in the leucoemeraldine salt (LS) state, while (b) the ECP method leads to POT/WS2 composites, which contain repeating units of POT in the emeraldine salt (ES) state. Capacitances equal to 123.5, 465.76, and 751.6 mF cm-2 in the cases of POT-ES/WS2 composites, synthesized by SSI, ICP, and ECP, respectively, were reported.

This work investigates the gelation behavior and phase stability of E7 liquid crystals using a series of mesogenic benzoylthiourea (BTU) gelators with different alkyl chain lengths (6, 10, 12) at concentrations as low as 2.5 wt.%. Polarized optical microscopy (POM) and differential scanning calorimetry (DSC) confirm that the BTU gelators effectively stabilize the E7/gel composites through hydrogen bonding and pi-pi interactions. DSC studies reveal a concentration-dependent shift in transition temperatures, with evidence of distinct LC-isotropic and isotropic-gel transitions. Rheological and dielectric studies further demonstrate a reversible gel-sol transition and enhanced dipolar relaxation times (37.7 ns), indicating strong interactions between E7 and the BTU network.

Background . Algeria has long sought to exploit its uranium deposits in the Hoggar region, whose objective is to market the ore, and use part of the production exclusively in the civil field, especially in electricity generation. The exploitation and valorisation of this ore; require a very specific process of exploitation, characterization and treatment. The main objective of this work is to establish a detailed and complete technical data sheet for the Tahaggart deposit, enabling the implementation of a uranium ore mining and beneficiation technique to obtain a marketable product known as "yellow cake". Methods . To achieve this objective, samples were taken from the site understudy, followed by microscopic and macroscopic analyses non-thin sections to obtain petrographic, mineralogical and geochemical identifications. Results . The analyses confirmed the sandstone character of the ore and the predominance of quartz, clays, oxides and iron hydroxides as well as uranium and rutile minerals. The uranium contents in the mineralized altered levels varied from 0.90 to 1.32 and from 0.34 to 0.74 % in the mineralized conglomeratic sandstones. Uranium occurred either in the high-grade uranium minerals or low-grade apatite, zircon, rutile, and in traces in monazite. & Scy; o n c l u s ions . Different studies carried out on the Tahaggart region have proven the presence of Uranium ores with remarkable quantities, varying between 0.90 to 1.32 % in the mineralized altered levels and 0.34 to 0.74 % in the mineralized conglomeratic sandstones, however, despite this, and in view of the strategic value that uranium enjoys at the international level; to date, there is no exploitation this mine by the state. The best treatment method in this case is heap leaching; the recovery rate by this method can reach 70 % in uranium as "yellow cake".

Capitalizing on invasive plant species and stopping their aggressive spread might be achieved by using them as a renewable source of useful products such as cellulose. The study aimed to develop new cellulose-based food packaging materials with antioxidant and antimicrobial activity. The cellulose was extracted from the invasive plant species Robinia pseudoacacia pods, crosslinked with citric acid, used as reinforcement for polyvinyl alcohol (PVA) and functionalized with ferulic acid (FA). The obtained materials were characterized by XRD, ATR-FTIR, contact angle and SEM. The materials exhibited low solubility in water and the swelling degree was proportional to the FA content. The FA release from the matrix was assessed by HPLC and the antioxidant profile by CUPRAC, FRAP, and TEAC methods. The obtained materials inhibited the growth of bacteria, yeasts and molds, being especially active on Gram-positive bacteria and yeasts. Overall, the most promising formulation for further developing new packaging materials for products with water activity less than 0.95 was the one with the highest FA content.

Cu2ZnSnSe4 (CZTSe) is a promising material for thin-film solar cells due to its suitable band gap, high absorption coefficient, and composition of earth-abundant and nontoxic elements. In this study, we prepared CZTSe thin films from Cu/SnSe2 and ZnSe stacks using a two-step annealing process. Initially, Cu-Sn-Se (CTSe) films were synthesized by sequential deposition and annealing of Cu and SnSe2 precursors in either a selenium (Se) or tin-selenium (Sn+Se) atmosphere. After the deposition of a ZnSe layer on top of CTSe films, the stack underwent a second annealing process, again in either a Se or Sn+Se atmosphere, resulting in four distinct annealing combinations: Se -> Se, Sn+Se -> Se, Se -> Sn+Se, and Sn+Se -> Sn+Se. The first annealing step enabled the formation of CTSe, while the second annealing step, performed after ZnSe deposition, led to the formation of the CZTSe phase. Comprehensive characterization including grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements was conducted. GIXRD and Raman analysis revealed kesterite CZTSe phase peaks, with some samples showing a split in the main peak at similar to 27 degrees (2 theta), indicating the presence of Cu x Se and ZnSe secondary phases. SEM analysis showed the impact of Sn and Se annealing on grain size, with larger grains observed in films annealed in Sn+Se atmospheres, particularly in the second heat treatment process. EDS results displayed consistent elemental composition across samples, with varying Cu/(Zn+Sn), Zn/Sn and Se/metal ratios influencing the band gap values from 1.09 to 1.63 eV. Hall measurements indicated p-type conductivity with carrier concentrations between 1016 and 1023 cm-3. These results highlight the effectiveness of our two-step annealing process, particularly the Sn+Se atmosphere, in optimizing CZTSe thin films for potential use in high-efficiency thin-film solar cells.