National Institute Of Materials Physics - Romania

A multifunctional tool, designed for the research and characterization of advanced materials, used for the following types of studies: conventional TEM, HRTEM, STEM, electron tomography, precession electron diffraction (PED), in-situ TEM at high or cryogenic temperatures, energy dispersive X-ray spectroscopy, elemental chemical mapping. Configuration: LaB6 gun, STEM unit, JEOL JED-2300T Dry SDD EDS unit, emSIS […]

Electrical characterization in dark and under illumination and Hall investigations by measurements and modelling of experimental curves: current-voltage (I– V) at different temperatures T, in DC and AC regime capacitance-voltage (C– V), capacitance-frequency (C – f) and capacitance-time (C – t) polarization-voltage (P– V) I– T and R – T at different bias voltages Photocurrent spectra (I– λ) under modulated and continuous light regime Hall measurements: V–Icharacteristics for different applied currents, […]

Rapid thermal annealing (RTA) and controlled oxidations (RTO) in the rapid thermal processing – RTP system (up to 3-inch silicon wafer) at 200 – 1250 °C with ramp rates up to 200 °C/s, in gas flow (N2, O2, Ar si H2) and thermal annealing in the three independ Rapid thermal processing – RTP system (left) for thermal annealing (RTA), oxidation […]

Deposition of semiconductor thin films and multilayer structures by magnetron sputtering: dielectrics (SiO2, TiO2, ZrO2, HfO2, Al2O3, Si3N4) and semiconductors (Si, Ge, SiGe, SiGeSn) on heated substrates or on substrates mantained at room temperature Configuration in situanalysis techniques: Auger electron surface spectroscopy – AES low-energy electron diffraction – LEED real time in situellipsometric monitoring and profilometer for […]

A multifunctional instrument, provided with imaging (FEG-SEM), ion-beam processing (FIB), analytical (EDS) and electron diffraction (EBSD) capabilities for advanced characterization of microscopic morphology, elemental composition, chemical mapping and surface structural mapping. Configuration: FEG-SEM (Schottky gun), FIB (Orsay Physics), EDS (Bruker Quantax 200), EBSD (Bruker e-Flash 1000) Technical specifications: SEM acceleration voltages 0.2-30 kV; SE and […]

Aberration corrected analytical instrument designed for atomic resolution characterization of advanced materials by imaging (HRTEM, STEM) and spectroscopic (EELS, EDS) methods. Configuration: Schottky Field Emission Gun (FEG), CEOS spherical aberration corrector for STEM mode, STEM Unit, Gatan Quantum SE EELS and Image Filter, JEOL JED-2300T EDS unit, Gatan Orius 200D CCD (wide angle port), Gatan […]

FT/CW X-band EPR spectrometer model ELEXSYS E580 from Bruker with pulse ENDOR (E560 DICE II) and ELDOR (E580-400) accessories Operating parameters:  Frequency range (CW mode): 9.2- 9.9 GHz; Sensitivity (CW mode): 1.2 x 109 spins/Gauss; Magnetic field: 0.03 – 1.45 T; RF range and power (for ENDOR measurements): 100 kHz – 250 MHz; 150W Pulse […]

A multifunctional tool designed for the research and characterization of advanced materials, used for the following types of studies: conventional transmission electron microscopy, high-resolution transmission electron microscopy, electron tomography, in-situ electron microscopy at high or low (cryogenic) temperature, energy dispersive X-ray spectroscopy, elemental chemical mapping. TECHNICAL SPECIFICATIONS Scanning Transmission Electron Microscopy (STEM) unit with Annular […]