Rapid thermal annealing (RTA) and controlled oxidations (RTO) in the rapid thermal processing – RTP system (up to 3-inch silicon wafer) at 200 – 1250 °C with ramp rates up to 200 °C/s, in gas flow (N2, O2, Ar si H2) and thermal annealing in the three independ
Rapid thermal processing – RTP system (left) for thermal annealing (RTA), oxidation (RTO) and nitration (RTN). Three independent temperature zone horizontal split tube furnace (right) for thermal annealing and physical vapor deposition (PVD).
ent temperature zone horizontal split tube furnace at temperatures up to 1200 °C in vacuum or Ar, N2 flow
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