National Institute Of Materials Physics - Romania

In this work, we investigated the influence of reduced graphene oxide (RGO) on the electrical performances of ZnO/Ag multilayer transparent conductive electrodes. RGO flakes were successfully laser transferred by matrix assisted pulsed laser evaporation (MAPLE) using frozen targets obtained from suspensions of commercially chemically RGO powder dispersed in dimethyl sulfoxide (DMSO). The main deposition parameters such as RGO concentration, laser fluence, number of the laser pulses and deposition pressure were varied to identify the optimal morphological and optical characteristics. The laser transfer conditions for the RGO structures with the best transmittance were further employed in preparation of RGO/Ag/ZnO multilayer transparent conductive electrodes (MTCE). Thus, the MAPLE deposited RGO structures were covered with metal (Ag) by vacuum thermal evaporation (VTE) and subsequently with metal oxide (ZnO) by radio frequency magnetron sputtering (RF-MS). In comparison to the optical and electrical properties of a ZnO/Ag/ZnO reference structure, the results emphasize that the RGO/Ag/ZnO are featured by a similar transmittance (similar to 82-85 %) and improved sheet resistance (similar to 10.6 Omega/square, meaning up to 2-fold smaller).

Oxygen in the excited state is essential for organic synthesis and medical treatment. Herein, a novel phenomenon is reported in which the magnetic ground state of molecular oxygen undergoes a transition at room temperature from S = 1 to S = 1/2, corresponding to the transition of O2 from a triplet to a doublet state after stable physical adsorption on the defect-free surface of bulk VSe2. This density functional theory (DFT) calculations demonstrate the stable physical adsorption of O2 on both 1T- and 2H-VSe2 surfaces without further decomposition. Electron spin resonance (ESR) measurements confirm the spin state transition. Theoretical simulations reveal the charge transfer from entangled V-3d and Se-4p bands to oxygen as the leading cause of the spin state transition. This mechanism has not been previously proposed and offers multiple potential applications, from organic synthesis to medicine. Moreover, this approach can be extended to reveal new aspects of known catalytic materials and to design novel catalysts.

We theoretically study the 2D Su-Schrieffer-Heeger model in the context of Floquet topological insulators (FTIs). FTIs are systems which undergo topological phase transitions, governed by Chern numbers, as a result of time reversal symmetry (TRS) breaking by a time periodic process. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light irradiation. We analytically show that TRS breaking is forbidden in the absence of second order neighbors hopping. In the absence of light irradiation, we identify a symmetry-protected degeneracy and prove the appearance of a flat band along a specific direction in the momentum space. Furthermore, we employ a novel method to show that the four unit cell atoms, in the absence of irradiation, can be interpreted as conserved spin states. With the breaking of TRS via light irradiation, these spin states are no longer conserved, leading to the emergence of chiral edge states. We also show how the interplay between the TRS breaking and dimerization leads to some complex topological phase transitions. The validity of our findings is substantiated through Chern numbers, spectral properties, localization of chiral edge states and simulations of quantum Hall transport. Our model is suitable not only for condensed matter (materials), but also for cold gases trapped in optical lattices or topolectrical circuits.

Herein we present a comparative study among different spray-coated nanometric mesoporous electron transporting layers (ETLs) in perovskite solar cells (PSC), namely m-TiO2, 2 , m-SnO2 2 and m-SnO2 2 quantum dots (mSnO2QDs). 2 QDs). The solutions used for deposition were prepared from commercial pastes and colloidal suspensions for m-TiO2 2 and m-SnO2. 2 . For m-SnO2QDs 2 QDs in-house QDs solutions were prepared. The formamidiniummethylamonium-potassium (FAMA@10 K) has been used as light absorber material in the fabricated PSCs. The structural, compositional and morphological studies, correlated with the photovoltaic performance of PSCs, indicate that the m-SnO2 2 QDs layer is the best candidate among the three investigated mesoporous ETLs. Compared with the suspensions used for the other two ETLs, the in-house prepared SnO2 2 QDs solution presents smaller agglomerates of nanoparticles and results in the formation of a thinner, more uniform and compact mesoporous ETL. The FAMA@10 K perovskite deposited on m-SnO2 2 QDs ETL presents a lower roughness, better uniformity and a higher amount of PbI2. 2 . Our work unveils that the SnO2 2 QDs solution can be easily produced in laboratory and when is deposited as mesoporous scaffold in a PSC with FAMA@10 K perovskite, the power conversion efficiency increases up to 14.90 %, being with up to 27 % larger than in the PSCs with m-TiO2 2 and mSnO2 2 ETLs prepared from commercial solutions. By modeling the J-V dynamic hysteresis with more than 90 % match between the calculated and experimental J-V data, for all three types of mesoporous ETLs, the relevant parameters that explain the hysteresis magnitude and account for ionic-induced recombination processes in PSCs were determined.

Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an inplane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K. The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. Thus, the magnetic field controls the relative orientation of the magnetization of the metallic ferromagnetic electrodes, that leads to different magnetoresistance states. The orientation and the magnitude of the electric field controls the orientation of the polarization of the guanine ferroelectric barrier, that leads to different electroresistance states, respectively. Moreover, we have observed a strong interfacial coupling of the two parameters. Consequently, positive and negative magnetoresistance hysteresis loops corresponding to spin rectification effects and non-hysteretic (erased) resistive states are manipulated with the electric field by switching the orientation of the electrical polarization of the organic ferroelectric.

Polymorphism determines significant variations in materials' properties by lattice symmetry variation. If they are stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; changes of temperature or pressure when switching from one polymorph to another during synthesis may cause degradation of the structural quality. The present work reports on the single-step ion-beam-assisted fabrication of multilayered polymorph structures while applying the disorder-induced ordering approach. The dynamic annealing of disorder may be tuned, during ion irradiation, toward self-assembling of several polymorph interfaces. Gallium oxide multilayers with two polymorph interface repetitions are obtained. The single-crystal structure of the polymorphs is maintained between interfaces, exhibiting repeatable crystallographic relationships and optical properties. These data pave the way for enhancing materials' functionalities using not previously conceived capabilities of ion beam technology.

This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron sputtering from separate Ge and Sn targets using different Ar: H mixing ratios as working gas. Amorphous Ge1-xSnx:H films have been obtained on both c-Si and fused quartz substrates at ambient temperature, while dynamic nanocrystallization occurs in-situ when the substrate temperature during deposition is raised to 200 degrees C. Fourier-transform infrared spectroscopy has shown the hydrogen incorporation by detecting an absorption line at 1873 cm(-1), close to the value corresponding to Ge-H bonding, only in the room temperature amorphous films. Based on that, we infer that the hydrogen concentration is very low in the films deposited at high temperature. The higher concentration of hydrogen in the amorphous samples is associated with an increase of the absorption gap to 0.5 eV compared to 0.3 eV in the 200 degrees C samples. In-situ (during deposition) and ex-situ (by subsequent rapid thermal annealing) nanocrystallization have been analyzed by high-resolution transmission electron microscopy, X-ray diffraction and micro-Raman spectroscopy. SWIR spectral photosensitivity up to 2.4 mu m was found to be more than two orders of magnitude improved in hydrogenated amorphous films with high hydrogen content, compared to the nanocrystalline ones that are weakly hydrogenated. These findings demonstrate the potential of hydrogenation to enhance the photoelectric properties of GeSn sputtering films for optoelectronic SWIR infrared applications.

Herein we show that the Ti3SiC2 MAX phase can be used as a support for deposition of different amounts of metal oxides (MOx, M = Cu or V) (5, 10 and 20 wt%) for the direct oxidation of methane to formaldehyde using molecular oxygen, at relatively low temperatures and atmospheric pressure. The oxides were deposited using a hydrothermal method at 180 degrees C without affecting the bulk MAX phase structure. However, during the hydrothermal treatment (HT) a thin oxide layer - found to play an important role in the reaction's selectivity- was evidenced by X-ray photoelectron spectroscopy. We thus conclude that the MOx species are responsible for the CH4 activation, while the Ti3SiC2 surface is responsible for the high selectivity to formaldehyde indicating that, Ti3SiC2 has great potential for designing innovative catalysts for direct oxidation of methane using molecular oxygen and at atmospheric pressure.

Recently, perovskites have become a hotspot for researchers attempting to exploit metal and oxygen vacancies in structures of the form MTiO3, facilitating the convenient electron/hole migration, thus displaying interesting properties. Magnesium Titanate (MgTiO3) is a prominent part of the perovskite class, exhibiting remarkable electrical, thermal, and chemical properties. Undoped and Mn-doped MgTiO3 samples were obtained using a solid-state reaction starting from previously synthesized MgO and TiO2 powders, which were separately doped with different Mn ion concentrations. The resulting multiphase materials with a major MgTiO3 phase were thoroughly morpho-structurally analyzed employing XRD, STEM, Raman, PL, XPS, and EPR spectroscopy. The electrochemical results indicate that they show superior performance when used as electrode materials for supercapacitor application due to the high defect concentration as shown in EPR and PL spectroscopy and the ferroelectric behavior observed in XPS and XRD. When used in symmetric and asymmetric supercapacitor devices, they show promising results, with specific capacity values reaching up to 109 F/g for the symmetric and 609 F/g for the asymmetric devices, while energy and power density values reached 84.7 Wh/kg and 90.8 kW/kg respectively, proving a great potential in the energy storage field.

Laser thin layer deposition technologies were applied to develop organic heterostructures on flexible transparent conductive electrode (TCE). Flexible substrates such as flexible glass (FG), polyethersulfone (PES), amorphous polyethylene terephthalate (PET-A) and biaxially-oriented polyethylene terephthalate (PET-B) were employed to assess the influence of the substrate type on the optical and electrical characteristics of the organic devices. For comparison reason, the organic heterostructures were fabricated on rigid glass substrate and commercially available indium tin oxide (ITO)-coated PET. Hence, flexible and rigid glass substrates were coated with ITO film by pulsed laser deposition (PLD) at low fluence, subsequently a blend layer based on zinc phthalocyanine (ZnPc) and N, N '-bis-(1-dodecyl)perylene-3,4,9,10 tetracarboxylic diimide (AMC14) being deposited by matrix assisted pulsed laser evaporation (MAPLE) on the TCE film. The investigations evidenced that the roughness and the substrate type can strongly influence the properties of the ITO layer deposited by PLD as well as the optical and electrical characteristics of the organic heterostructures based on the blend layer deposited by MAPLE. Thus, the lowest roughness (0.8 nm) and the best Hall mobility (41.9 cm2/V center dot s) were achieved for ITO coatings deposited on flexible glass substrate. Also, the highest current density value (9.3 x 10- 4 A/cm2 at 0.5 V) was reached for the organic heterostructures fabricated on this type of flexible substrate.