National Institute Of Materials Physics - Romania

Undoped and Zn-doped ITO (ITO:Zn) multifunctional thin films were successfully synthesized using the sol-gel and dipping method on three different types of substrates (glass, SiO2/glass, and Si). The effect of Zn doping on the optoelectronic, microstructural, and gas-sensing properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), Raman spectroscopy, Hall effect measurements (HE), and gas testing. The results showed that the optical constants, the transmission, and the carrier numbers were correlated with the substrate type and with the microstructure and the thickness of the films. The Raman study showed the formation of ITO films and the incorporation of Zn in the doped film (ITO:Zn), which was confirmed by EDX analysis. The potential use of the multifunctional sol-gel ITO and ITO:Zn thin films was proven for TCO applications or gas-sensing experiments toward CO2. The Nyquist plots and equivalent circuit for fitting the experimental data were provided. The best electrical response of the sensor in CO2 atmosphere was found at 150 degrees C, with activation energy of around 0.31 eV.

The high-k-based MOS-like capacitors are a promising approach for the domain of non-volatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare MOS-like trilayer memory structures based on high-k ZrO2 by magnetron sputtering, with a 5% and a 10% concentrations of Zr in the Zr-ZrO2 floating gate layer. For crystallization of the memory structure, rapid thermal annealing at different temperatures between 500 degrees C and 700 degrees C was performed. Additionally, Al electrodes were deposited in a top-down configuration. High-resolution transmission electron microscopy reveals that ZrO2 has a polycrystalline-columnar crystallization and a tetragonal crystalline structure, which was confirmed by X-ray diffraction measurements. It is shown that the tetragonal phase is stabilized during the crystallization by the fast diffusion of oxygen atoms. The capacitance-voltage characteristics show that the widest memory window (Delta V = 2.23 V) was obtained for samples with 10% Zr annealed at 700 degrees C for 4 min. The charge retention characteristics show a capacitance decrease of 36% after 10 years.

The manipulation of magnetic anisotropy represents the fundamental prerequisite for the application of magnetic materials. Here we present the vectorial magnetic properties of nanostructured systems and thin films of Fe and FeCo prepared on linearly trenched Mo templates with thermally controlled periodicity. The magnetic properties of the nanosystems are engineered by tuning the shape, size, thickness, and composition parameters of the thin films. Thus, we control coercivity, magnetization, orientation of the easy axis of magnetization, and the long-range magnetic order of the system in the function of the temperature. We distinguish magnetic components that emerge from the complex morpho-structural features of the undulating Fe or FeCo nanostructured films on trenched Mo templates: (i) assembly of magnetic nanowires and (ii) assembly of magnetic islands/clusters. Uniaxial anisotropy at room temperature was proven, characterized, and explained in the case of all systems. Our work contributes to the understanding of magnetic properties necessary for possible further applications of linear systems and undulated thin films.

Antiferroelectric random access memory (AFERAM) is one of the newest alternative non-volatile memory technologies to emerge in recent years. ZrO2-based antiferroelectric films are exceptionally well-suited for memory applications with very high cycling endurance (>10(10)) and low operating voltages (< 2 V). Lightly alloying ZrO2 with HfO2 is performed to assess AFERAM device performance with back-end-of-line compatible thin film Zr1-xHfxO2 (x <= 0.13) capacitors. The transition fields associated with antiferroelectric behavior are reduced with more Hf incorporation, yielding a larger magnitude switching polarization and memory window. Cycling endurance beyond 10(10) cycles is conducted on thin film capacitors where wake-up in AFERAM first leads to an increase, then a decrease in the memory window at a cumulative cycle number found to be dependent on the amount of Hf-incorporation. Hf-incorporation into ZrO2 is demonstrated to be a feasible way to improve the memory window in ZrO2-based AFERAM.

A deeper understanding of the coupling at the interface of multiferroics heterostructures is being achieved by the use of synchrotron radiation techniques. Here, the authors use k-resolved soft X-ray photoemission spectroscopy and first principles calculations to investigate the band structure of several multiferroic heterostructures, isolating the distinct signature of the interface. Physics of the multiferroic interfaces is currently understood mostly within a phenomenological framework based on screening of the polarization field and depolarizing charges. Additional effects still unexplored are the band dependence of the interfacial charge modulation and the associated changes of the electron-phonon interaction, coupling the charge and lattice degrees of freedom. Here, multiferroic heterostructures of the colossal-magnetoresistance manganite La1-xSrxMnO3 buried under ferroelectric BaTiO3 and PbZrxTi1-xO3 are investigated using soft-X-ray angle-resolved photoemission. The experimental band dispersions from the buried La1-xSrxMnO3 identify coexisting two-dimensional hole and three-dimensional electron charge carriers. The ferroelectric polarization modulates their charge density, affecting the coupling of the 2D holes and 3D electrons with the lattice which forms large Frohlich polarons inherently reducing mobility of the charge carriers. Our k-resolved results on the orbital occupancy, band filling and electron-lattice interaction in multiferroic oxide heterostructures modulated by the ferroelectric polarization disclose most fundamental physics of these systems needed for further progress of beyond-CMOS ferro-functional electronics.

Gallium telluride (GaTe) is a van der Waals semiconductor, currently adopted for photonic and optoelectronic devices. However, the rapid degradation of GaTe in air, promoted by Te vacancies, is detrimental for device applications. Here, it is demonstrate that the surface oxidation of GaTe can be unexpectedly exploited for expanding the breadth of applications of GaTe. Specifically, the formation of a nanoscale sub-stoichiometric wide-band-gap Ga2O3 skin, promoted by Te vacancies, over narrow-band-gap GaTex upon air exposure is beneficial for electrocatalysis, photocatalysis, and gas sensing . In particular, the Heyrovsky step (H-ads + H+ + e(-) -> H-2) of hydrogen evolution reaction in an acidic medium is barrier-free for the sub-stoichiometric gallium-oxide/gallium-telluride heterostructure, which also enables a significant reduction of costs with respect to state-of-the-art Pt/C electrodes. In the photocatalytic process, the photo-generated electrons migrate from GaTe to Ga2Ox skin, which acts as the chemically active side of the interface. Moreover, the Ga2O3/GaTe heterostructure is a suitable platform for sensing of H2O, NH3, and NO2 at operational temperatures extended up to 600 degrees C (useful for gas detection in combustion processes), mainly due to the increased area of charge redistribution after adsorption achieved upon oxidation of GaTe.

The paper presents fabrication and characterization of spark plasma sintered textured (001) MgB2 with a record degree of orientation of about 40% and 16% by high-energy ultra-sonication and slip casting in high magnetic field (12 T) and 0 T magnetic field, respectively. Structural characterization was performed by X-ray diffraction, and electron microscopy. The analysis revealed unexpected preferred orientation also in the MgO secondary phase due to the epitaxial growth of (111) MgO on (001) MgB2. The influence of oriented microstructure on the superconducting characteristics expressed by critical current density (Jc), irreversibility field ( H irr), and on the pinning properties were assessed. High anisotropy versus sample orientation in applied magnetic field, H , was observed for Jc, Hirr, pinning activation energy ( U *) extracted from relaxation measurements. The zero-field critical current, Jc0 and Fp,maxare weakly or not dependent on the direction of H , while the other indicated parameters are significantly influenced. Results enable control of superconducting parameters by further optimization of microstructure through MgB2 texturing as a novel and viable strategy for development of bulk MgB2 with enhanced properties when taking advantage of its anisotropy.(c) 2021 Chongqing University. Publishing services provided by Elsevier B.V. on behalf of KeAi Communications Co. Ltd. This is an open access article under the CC BY-NC-ND license ( http://creativecommons.org/licenses/by-nc-nd/4.0/ ) Peer review under responsibility of Chongqing University

Special attention has recently been paid to surface-defective titanium dioxide and black TiO2 with advanced optical, electrical, and photocatalytic properties. Synthesis of these materials for photodegradation and mineralization of persistent organic pollutants in water, especially under visible radiation, presents interest from scientific and application points of view. Chemical reduction by heating a TiO2 and NaBH4 mixture at 350 degrees C successfully introduced Ti3+ defects and oxygen vacancies at the surface of TiO2, with an increase in the photocatalytic degradation of amoxicillin-an antibiotic that is present in wastewater due to its intense use in human and animal medicine. Three TiO2 samples were prepared at different annealing temperatures to control the ratio between anatase and rutile and were subjected to chemical reduction. Electron paramagnetic resonance investigations showed that the formation of surface Ti3+ defects in a high concentration occurred mainly in the anatase sample annealed at 400 degrees C, contributing to the bandgap reduction from 3.32 eV to 2.92 eV. The reduced band gap enhances visible light absorption and the efficiency of photocatalysis. The nanoparticles of similar to 90 m(2)/g specific surface area and 12 nm average size exhibit similar to 100% efficiency in the degradation of amoxicillin under simulated solar irradiation compared with pristine TiO2. Mineralization of amoxicillin and by-products was over 75% after 48 h irradiation for the anatase sample, where the Ti3+ defects were present in a higher concentration at the catalyst's surface.

As ferroelectric Hf0.5Zr0.5O2 (HZO) thickness scales below 10 nm, the switching characteristics are severely distorted typically showing an antiferroelectric-like behavior (pinched hysteresis) with reduced remanent polarization. Using Landau-Ginsburg-Devonshire (LGD) theory for the analysis of the experimental results, it is shown here that, in thin (5 nm) HZO, depolarization fields drive the system in a stable paraelectric phase coexisting with a metastable ferroelectric one, which explains the pinched hysteresis. This state of matter resembles a first order ferroelectric above the Curie temperature which is known to result in similar double-loop behavior. Here, based on the analysis of experimental data in the framework of LGD theory, it is reported that charge injection and trapping at pre-existing interface defects during field cycling ("wake-up") screens the depolarization field stabilizing ferroelectricity. It is found in particular that a sufficiently large energy density of interface states is beneficial for the recovery of fully open ferroelectric loops. HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness. Here, using Landau Devonshire theory, the authors show the origin of pinched hysteresis loops is connected with the existence of pronounced depolarizing fields which are minimized during field cycling recovering the full ferroelectric loops.

A new methodology to obtain magnetic information on magnetic nanoparticle (MNP) systems via electron tomography techniques is reported in this work. The new methodology is implemented in an under-development software package called Magn3t, written in Python and C++. A novel image-filtering technique that reduces the highly undesired diffraction effects in the tomography tiltseries has been also developed in order to increase the reliability of the correlations between morphology and magnetism. Using the Magn3t software, the magnetic shape anisotropy magnitude and direction of magnetite nanoparticles has been extracted for the first time directly from transmission electron tomography.