National Institute Of Materials Physics - Romania

Publications

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772 articles found

1. Cu2SnSe3 phase formation from different metallic and binary chalcogenides stacks using magnetron sputtering

Authors: Zaki, MY; Sava, F; Simandan, ID; Buruiana, AT; Mihai, C; Velea, A; Galca, AC

Published: JAN 2023, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 153, 107195, DOI: 10.1016/j.mssp.2022.107195

Cu2SnSe3 (CTSe) is a polyvalent material that can be used as an absorber layer for thin film solar cells or as a starting layer for the synthesis of CZTSe or CZTSSe compounds. Obtaining CTSe single phase films with opti-mized properties for thin film solar cells is a difficult task. A systematic study using both metallic and binary chalcogenides precursors for the formation of the CTSe phase was not performed. The films consisting of four different stacks (Sn\Cu, SnSe2\Cu, Sn\Cu2Se, and SnSe2\Cu2Se) were prepared by magnetron sputtering on soda lime glass (SLG) and molybdenum (Mo) coated SLG substrates, followed by annealing at 550 degrees C under Sn + Se atmosphere. X-ray diffraction and Raman spectroscopy results indicated the formation of a single CTSe phase in most of the stacks deposited on both substrates. Scanning electron microscopy images showed compact surfaces with large grains in the films deposited on Mo substrate, while the films on SLG have more voids on their sur-faces. The elemental analysis measured by energy dispersive spectroscopy revealed stoichiometric films on Mo, and copper and tin rich compositions on SLG substrates. The band gap values inferred by conventional spec-troscopy are between 0.81 and 1.95 eV. It was found that the SnSe2\Cu and Sn\Cu2Se stacks are preferred for the formation of a single CTSe phase, with dense surface morphology, a stoichiometric composition, and an optimal absorber layer band gap. This study opens the way to comprehend the formation reactions during the seleni-zation of metallic and binary chalcogenides precursors towards the optimization of kesterite absorber for photovoltaic device fabrication.

2. Experimental Band Structure of Pb(Zr,Ti)O-3: Mechanism of Ferroelectric Stabilization

Authors: Popescu, DG; Husanu, MA; Constantinou, PC; Filip, LD; Trupina, L; Bucur, CI; Pasuk, I; Chirila, C; Hrib, LM; Stancu, V; Pintilie, L; Schmitt, T; Teodorescu, CM; Strocov, VN

Published: JAN 2023, ADVANCED SCIENCE, DOI: 10.1002/advs.202205476

Pb(Zr,Ti)O-3 (PZT) is the most common ferroelectric (FE) material widely used in solid-state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr0.2Ti0.8)O-3 using soft-X-ray angle-resolved photoelectron spectroscopy (ARPES) is explored. The enhanced photoelectron escape depth in this photon energy range allows sharp intrinsic definition of the out-of-plane momentum k and thereby of the full 3D band structure. Furthermore, the problem of sample charging due to the inherently insulating nature of PZT is solved by using thin-film PZT samples, where a thickness-induced self-doping results in their heavy doping. For the first time, the soft-X-ray ARPES experiments deliver the intrinsic 3D band structure of PZT as well as the FE-polarization dependent electrostatic potential profile across the PZT film deposited on SrTiO3 and LaxSrMn1-xO3 substrates. The negative charges near the surface, required to stabilize the FE state pointing away from the sample (P+), are identified as oxygen vacancies creating localized in-gap states below the Fermi energy. For the opposite polarization state (P-), the positive charges near the surface are identified as cation vacancies resulting from non-ideal stoichiometry of the PZT film as deduced from quantitative XPS measurements.

3. Structural and transport properties of Cu2CoSnS4 films prepared by spray pyrolysis

Authors: El Khouja, O; Assahsahi, I; Nouneh, K; Touhami, ME; Secu, M; Talbi, A; Khaaissa, Y; Matei, E; Stancu, V; Galatanu, A; Galca, AC

Published: NOV 1 2022, CERAMICS INTERNATIONAL, 48, DOI: 10.1016/j.ceramint.2022.07.185

In the present work, stannite Cu2CoSnS4 (CCTS) films were elaborated using spray pyrolysis method on soda-lime glass, at different deposition temperatures (T-d = 250, 300, and 350 degrees C), followed by different chosen sulfurization temperatures (T-s = 450, 500, and 550 degrees C). X-ray diffraction (XRD) revealed the nearly single-phase formation of CCTS films at 300 degrees C deposition temperature. After sulfurization in argon flow, the XRD lines become narrower, the average crystallite size expanding above 70 nm. The Raman spectroscopy analysis confirmed the stannite structure formation, as well as the presence CoS2 secondary phases, which reduces at higher sulfurization temperature (550 degrees C). The energy dispersive spectroscopy results indicated atomic ratios of Cu/Co/Sn/S close to the ideal stoichiometric ratio 2:1:1:4. The room temperature photoluminescence emission is recorded with maximum in the 1.35-1.40 eV range. Thermoelectric properties are measured up to 130 degrees C, the films show poor power factor as a result of small positive Seebeck coefficients 10-45 Of K -1 and low electrical conductivity despite of having relatively high carrier concentration (similar to 10(20) cm(-3)).

4. Layered SnSe nanoflakes with anharmonic phonon properties and memristive characteristics

Authors: Buruiana, AT; Bocirnea, AE; Kuncser, AC; Tite, T; Matei, E; Mihai, C; Zawadzka, N; Olkowska-Pucko, K; Kipczak, L; Babinski, A; Molas, MR; Velea, A; Galca, AC

Published: OCT 15 2022, APPLIED SURFACE SCIENCE, 599, 153983, DOI: 10.1016/j.apsusc.2022.153983

Understanding the phonon anharmonicity and temperature-dependent behavior of phonons that affect the thermal transport properties in 2D materials is crucial for developing efficient thermoelectric and memristor devices. SnSe has attracted significant interest because of its potential applications for developing such novel devices. Here, orthorhombic SnSe nanoflakes with a thickness of less than 100 nm and oriented along the [100] crystal axis were obtained using physical vapor transport at atmospheric pressure. Polarization-resolved Raman spectroscopy of SnSe nanoflakes was performed at a temperature of 5 K. Temperature-dependent frequencies and linewidths of Raman modes in tin selenide were fitted according to the anharmonic phonon coupling theory. The results indicate that both two and three order processes are responsible for the phonon decay in tin selenide. The memristive property was confirmed by electrical measurements of SnSe devices. SnSe memristors have an operating current of 10-4 A, similar to other transition-metal dichalcogenide memristors, but are more energy efficient than memristors based on defect migration, with a threshold voltage of 3 V.

5. New superdielectric materials: (1-x) SrFe12O19 - x BNT-BT nanocomposites

Authors: Greculeasa, SG; Comanescu, C; Iacob, N; Kuncser, A; Smaranda, I; Amarande, L; Cioangher, M; Burdusel, M; Teodorescu, V

Published: OCT 1 2022, PHYSICA B-CONDENSED MATTER, 642, 414139, DOI: 10.1016/j.physb.2022.414139

Novel (1-x) SrFe12O19 - x BNT-BT0.08 (x = 0; 0.5; 0.8; 1) nanocomposites were explored in this study. The samples were produced by sol-gel method and compacted by conventional sintering. The composition, morphology, local structure, dielectric and magnetic properties were investigated by X-ray diffraction, Transmission Electron Microscopy, Impedance Analysis, Mossbauer spectroscopy, and SQUID magnetometry. The desired composition and the presence of the magnetoplumbite SrFe12O19 and perovskite BNT-BT structures were verified by X-ray diffraction. Irregular morphology and large size distributions are evidenced in the electron microscopy micrographs. The reported room temperature dielectric constants in this study are the highest values obtained in multiferroic composites at room temperature: giant dielectric constants (similar to 1.3 x 10(6)) were obtained, relative to 0.13 x 10(4) in BNT-BT. The hyperfine parameters allowed the identification of the Wyckoff positions of the Fe ions corresponding closely to the theoretical case. The hard magnetic character of the SrFe12O19 phase is evidenced from the magnetic measurements. For the first time in multifermic composites, superdielectric characteristics are evidenced at room temperature.

6. BaTiO3 nanocubes-Gelatin composites for piezoelectric harvesting: Modeling and experimental study

Authors: Ciomaga, CE; Horchidan, N; Padurariu, L; Stirbu, RS; Tiron, V; Tufescu, FM; Topala, I; Condurache, O; Botea, M; Pintilie, I; Pintilie, L; Rotaru, A; Caruntu, G; Mitoseriu, L

Published: SEP 15 2022, CERAMICS INTERNATIONAL, 48, DOI: 10.1016/j.ceramint.2022.05.264

Flexible composites containing BaTiO3 nanoparticles into Gelatin bio-polymer matrix were designed and investigated. Following the idea that the electric field concentration in corners/edges at the interfaces between dissimilar materials give rise to enhanced effective permittivity in composites, cuboid-like BaTiO3 nanoparticles have been employed as nanofillers into Gelatin matrix by using an inexpensive solution-based processing method. As predicted by finite element method simulations developed for cubic-like inclusions into a homogeneous polymer matrix, the experimental permittivity of xBT-(1-x)Gelatin composites increases when increasing the high-permittivity filler addition. For the composition x = 40 wt% (corresponding to 12 vol% BaTiO3 addition), permittivity reaches epsilon r -15.7 with respect to epsilon r -9.8 of pure Gelatine (measured at 105 Hz), while the average piezoelectric coefficient d33 as determined by piezoelectric force microscopy shows a remarkable increase up to 21 pm/V in composites with x = 40 wt%, in comparison to -7 pm/V in pure Gelatin. By using the experimentally determined material constants, the simulated piezoelectric voltage output vs. time has shown a similar increase (about a doubling of its amplitude) of the harvesting signal in the composite with x = 40 wt% BT, with respect to one of the polymer matrix, thus demonstrating the beneficial role of embedding BT nanoparticles into the biopolymer for increasing the mechanical harvesting response.

7. Enhanced photoelectrochemical activity of WO3-decorated native titania films by mild laser treatment

Authors: Spataru, T; Mihai, MA; Preda, L; Marcu, M; Radu, MM; Becherescu, ND; Velea, A; Zaki, MY; Udrea, R; Satulu, V; Spataru, N

Published: SEP 15 2022, APPLIED SURFACE SCIENCE, 596, 153682, DOI: 10.1016/j.apsusc.2022.153682

The effectiveness of the electrochemical WO3-modification as a method for improving the photoactivity of native air-formed TiO2 layers was assessed. The way in which a mild laser treatment influences the photo-electrochemical performances of the thus obtained WO3/TiO2 systems was also investigated. At laser-treated electrodes (L-WO3/TiO2), the melting-solidification process induced by the treatment led to a smaller size of the deposited WO3 particles and to their better dispersion on the surface. The treatment also enhanced the surface oxygen deficiency and ensured better relative absorptivity of the oxygenated species on the surface. These features, together with the intrinsic narrower bandgap of the WO3/TiO2 composites, the higher donor density and the lower flat band potential of L-WO3/TiO2 enabled faster kinetic of the oxygen photoanodic evolution. Importantly, the same process exhibited a cathodic shift of its onset potential. The laser treatment also strongly enhanced the photoelectrocatalytic performances for UV-assisted methanol anodic oxidation.

8. Magnetic Properties of Nanosized Fe and FeCo Systems on Trenched Mo Templates

Authors: Stanciu, AE; Schinteie, G; Kuncser, AC; Locovei, C; Trupina, L; Iacob, N; Leca, A; Borca, B; Kuncser, V

Published: SEP 2022, COATINGS, 12, 1366, DOI: 10.3390/coatings12091366

The manipulation of magnetic anisotropy represents the fundamental prerequisite for the application of magnetic materials. Here we present the vectorial magnetic properties of nanostructured systems and thin films of Fe and FeCo prepared on linearly trenched Mo templates with thermally controlled periodicity. The magnetic properties of the nanosystems are engineered by tuning the shape, size, thickness, and composition parameters of the thin films. Thus, we control coercivity, magnetization, orientation of the easy axis of magnetization, and the long-range magnetic order of the system in the function of the temperature. We distinguish magnetic components that emerge from the complex morpho-structural features of the undulating Fe or FeCo nanostructured films on trenched Mo templates: (i) assembly of magnetic nanowires and (ii) assembly of magnetic islands/clusters. Uniaxial anisotropy at room temperature was proven, characterized, and explained in the case of all systems. Our work contributes to the understanding of magnetic properties necessary for possible further applications of linear systems and undulated thin films.

9. Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

Authors: Lomenzo, PD; Li, SR; Pintilie, L; Istrate, CM; Mikolajick, T; Schroeder, U

Published: SEP 2022, IEEE ELECTRON DEVICE LETTERS, 43, DOI: 10.1109/LED.2022.3189159

Antiferroelectric random access memory (AFERAM) is one of the newest alternative non-volatile memory technologies to emerge in recent years. ZrO2-based antiferroelectric films are exceptionally well-suited for memory applications with very high cycling endurance (>10(10)) and low operating voltages (< 2 V). Lightly alloying ZrO2 with HfO2 is performed to assess AFERAM device performance with back-end-of-line compatible thin film Zr1-xHfxO2 (x <= 0.13) capacitors. The transition fields associated with antiferroelectric behavior are reduced with more Hf incorporation, yielding a larger magnitude switching polarization and memory window. Cycling endurance beyond 10(10) cycles is conducted on thin film capacitors where wake-up in AFERAM first leads to an increase, then a decrease in the memory window at a cumulative cycle number found to be dependent on the amount of Hf-incorporation. Hf-incorporation into ZrO2 is demonstrated to be a feasible way to improve the memory window in ZrO2-based AFERAM.

10. Sr and Mg Doped Bi-Phasic Calcium Phosphate Macroporous Bone Graft Substitutes Fabricated by Robocasting: A Structural and Cytocompatibility Assessment

Authors: Besleaga, C; Nan, B; Popa, AC; Balescu, LM; Nedelcu, L; Neto, AS; Pasuk, I; Leonat, L; Popescu-Pelin, G; Ferreira, JMF; Stan, GE

Published: SEP 2022, JOURNAL OF FUNCTIONAL BIOMATERIALS, 13, 123, DOI: 10.3390/jfb13030123

Bi-phasic calcium phosphates (BCPs) are considered prominent candidate materials for the fabrication of bone graft substitutes. Currently, supplemental cation-doping is suggested as a powerful path to boost biofunctionality, however, there is still a lack of knowledge on the structural role of such substituents in BCPs, which in turn, could influence the intensity and extent of the biological effects. In this work, pure and Mg- and Sr-doped BCP scaffolds were fabricated by robocasting from hydrothermally synthesized powders, and then preliminarily tested in vitro and thoroughly investigated physically and chemically. Collectively, the osteoblast cell culture assays indicated that all types of BCP scaffolds (pure, Sr- or Sr-Mg-doped) delivered in vitro performances similar to the biological control, with emphasis on the Sr-Mg-doped ones. An important result was that double Mg-Sr doping obtained the ceramic with the highest beta-tricalcium phosphate (beta-TCP)/hydroxyapatite mass concentration ratio of similar to 1.8. Remarkably, Mg and Sr were found to be predominantly incorporated in the beta-TCP lattice. These findings could be important for the future development of BCP-based bone graft substitutes since the higher dissolution rate of beta-TCP enables an easier release of the therapeutic ions. This may pave the road toward medical devices with more predictable in vivo performance.