National Institute Of Materials Physics - Romania

The films of SiGe nanocrystals in SiO2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.

Here we report a ferroelectric capacitor structure obtained by alternating ferroelectric and insulator thin-film layers which allows an increase of up to 2(n) polarization states, with n the number of ferroelectric layers. Four and up to eight distinct, stable and independently addressed polarization states are experimentally demonstrated in this work. The experimental findings are supported by a theoretical model based on the Landau-Ginzburg-Devonshire theory. The key parameter is the change in the strain conditions of ferroelectric layers induced by the insulating separator. Notably, the 2(n) increase in the storage capacity can be achieved without major changes in the present technology used for FeRAM devices. The test structures demonstrate very good memory characteristics such as retention and fatigue, opening the way towards the design of high density ferroelectric memories.

The integration of ferroelectrics in perovskite solar cells is proposed as possible way to enhance charge collection efficiency. First results on solar cellmanufactured with PbTiO3 (PTO) instead of TiO2 have shown negligible values for the power conversion efficiency (PCE). This is explained by the high serial resistance of sol-gel deposited PTO on F:SnO2 electrodes (FTO). Although PTO layer has remnant polarization of 22 mu C/cm(2), the high potential barrier (0.25 +/- 0.05 eV) at the FTO/PTO interface and lowcarriermobility (10(-8) cm(2) V-1 s(-1)) compared to TiO2 leads to high serial resistance. Better results were obtained with thinner PTO layers grown by pulsed laser deposition, with PCE values up to 0.6%. Further enhancement was obtained by replacing PTO with BaTiO3 (BTO), with PCE value reaching about 0.8% after poling the cell with +3 V. The most important finding was that the magnitude of the short circuit current increases with the amplitude of the poling voltage while the value of the open-circuit voltage remains about the same, around 0.9 V. This is explained through more efficient collection of the charges generated under illumination in the absorber layer due to the polarization that is present in the ferroelectric film. (C) 2017 Elsevier Ltd. All rights reserved.

Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.51.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.60.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a +/- 0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 C does not exhibit a hysteresis loop, while the samples on 300 and 400 C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase). (c) 2017 Elsevier B.V. All rights reserved.

A series of novel N-benzoyl-N'-aryl thiourea derivatives (BTU) bearing different number of alkoxy groups in terminal positions of benzoyl unit and a perfluorooctyl group on the other side have been designed and prepared. Their liquid crystalline properties were investigated by a combination of three techniques: polarizing optical microscopy (POM), differential scanning calorimetry (DSC) and variable-temperature powder X-ray diffraction (XRD). Their thermal stability was studied by thermogravimetric analysis (TG). It was found that only the compounds which have only one alkoxy chain attached to benzoyl unit, 1a and 1b, show calamitic mesomorphic behavior, with smectic A and C phases being displayed. The type and stability of these mesophases are greatly influenced by the alkyl chain length as well as by the presence of perfluorooctyl group. The clearing and the mesophase ranges are significantly increased with the incorporation of perfluoroalkyl chains when compared to non-fluorinated analogues, with almost 40 degrees C. The attachment of additional alkoxy groups on the benzoyl moiety led to a significant decrease of the clearing points and suppression of the mesogenic character.

Some of the modern aspects of field emission based electron sources have been collated in a short and comprehensive review. The usually overlooked peculiar aspects in this research field have been particularly emphasized in order to increase the interest in further fundamental studies and technological applications. The vast material was roughly split in two main branches which occasionally overlap: the electron emission devices based on chemically homogeneous nanostructured surfaces and the more complex nanocomposite emitting surfaces.

Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (similar to 50 degrees C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

We have developed a thin film structure with a maximum magnetoresistance effect (MRE) at room temperature, which is one of the operating requirements for many applications. It is shown that La0.67Ba0.33Ti0.02Mn0.98O3 epilayers obtained by pulsed laser deposition onto (001) SrTiO3 single crystal substrates exhibit the highest MRE, Delta R/R(H) approximate to 150% or Delta R/R(0) approximate to 60% under 5 T, at 300 K, a temperature near to the corresponding Curie temperature (T-C). Both doping with a tiny amount of titanium and induced stress due to lattice mismatch between the thin film and the substrate contribute to a decrease in T-C as compared to the pristine compound and therefore to the decrease in the temperature where the highest MRE is recorded. Published by AIP Publishing.

A series of flexibly linked bis-imidazolium salts with alkyl sulfate anions having different chain lengths (10, 12, 14) was designed and prepared starting from 1,1'-(alpha,omega-alkanediyl)-bisimidazole and alkyl bromides (14 or 16 carbon atoms) followed by metathesis with the corresponding sodium salts. These compounds were investigated because of their liquid crystalline properties using a combination of differential scanning calorimetry (DSC), polarized optical microscopy (POM) and temperature dependent powder X-ray diffraction (XRD). All nine bis-imidazolium compounds with alkyl sulfate anions show liquid crystalline properties which were influenced by flexible spacer length, alkyl tail length and, finally, the length of alkyl chains attached to sulfate groups. Broader mesophase ranges were found for compounds with a shorter spacer (six carbon atoms), about 70 degrees C. For compounds with a spacer of ten carbon atoms, higher mesophase ranges and clearing temperatures were found for longer alkyl tails (sixteen carbon atoms). Increasing the length of alkyl chains attached to sulfate anions resulted in higher clearing temperatures for compounds with the longer spacer. The variation in the carbon atom number of the alkyl sulfate anion for bis-imidazolium compounds with the shorter spacer has almost no impact on their SmA phase stability.

Bi1.5-xZn0.92-yNb1.5O6.92-delta (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111} Pt/TiO2/SiO2/(100) Si substrate (Pt/Si) and epitaxial {111} Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65: 35 on Pt/Si and 80: 20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (similar to 0.05).