National Institute Of Materials Physics - Romania

Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li: ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial. (C) 2017 Elsevier B.V. All rights reserved.

Hydroxyapatite-starch composites solidify rapidly via jellification, making them suitable candidates for robocasting. However, many aspects related to hydroxyapatite powder characteristics, hydroxyapatite-starch interaction, and composites composition and properties need to be aligned with robocasting requirements to achieve a notable improvement in the functionality of printed scaffolds intended for bone regeneration. This article presents a preliminary evaluation of hydroxyapatite-starch microcomposites. Thermal analysis of the starting powders was performed for predicting composites' behavior during heat-induced densification. Also, morphology, mechanical properties, and hydroxyapatite-starch interaction were evaluated for the jellified composites and the porous bodies obtained after conventional sintering, for different starch additions, and for ceramic particle size distributions. The results indicate that starch could be used for hydroxyapatite consolidation in limited quantities, whereas the composites shall be processed under controlled temperature. Due to a different mechanical behavior induced by particle size and geometry, a wide particle size distribution of hydroxyapatite powder is recommended for further robocasting ink development.

We investigate the dynamic behavior of perovskite solar cells by focusing on the relaxation time tau, which corresponds to the slow de-polarization process from an initial bias pre-poled state. The dynamic electrical model (DEM) is employed for simulating the J-V characteristics for different bias scan rates and pre-poling conditions. Depending on the sign of the initial polarization normal or inverted hysteresis may be induced. For fixed pre-poling conditions, the relaxation time, in relation to the bias scan rate, governs the magnitude of the dynamic hysteresis. In the limit of large tau the hysteretic effects are vanishing for the typical range of bias scan rates considered, while for very small tau the hysteresis is significant only when it is comparable with the measurement time interval.

Low-loss dielectrics with various microstructure and, consequently, different extrinsic losses were investigated by using terahertz time-domain spectroscopy. The losses have been extrapolated and compared with those measured at microwave frequencies. The results showed that extrinsic factors have a considerably contribution in microwave domain. The intrinsic limit of dielectric loss of low absorption polycrystalline materials have been estimated by terahertz spectroscopy.

Ceramic compounds of ferroelectric lead zirconate titanate (PZT) and ferroelectric barium titanate (BT) were prepared from nanopowders corresponding to the formula (1-x)PZT.xBT with x = 0; 0.1; 0.2 ... 0.9; 1. The samples were investigated by X-ray diffraction and electron microscopy and the piezoelectric properties were determined by means of an impedance analyzer. The sintering process is complex since samples densify at different temperatures depending on the composition resulting in different morphostructures. Accordingly, the piezoelectric properties show unusual behavior discussed in terms of different grain size and composition. A remarkably high enhancement of the relative dielectric constant, epsilon(r) coupled with maxima in both, piezoelectric charge constant d(33) and the piezoelectric voltage constant g(33), is observed for x = 0.4 while the values of the coupling coefficient kp are still high similar to those of pure PZT.

Investigations of barium strontium titanate (BST) layers deposited on MgO and Si substrates are presented. Since the Sr content determines the dielectric and optical properties of the BST layers at room temperature, accurate compositional analysis was performed by using Rutherford Backscattering technique at 3.041 Mev.

In the current work we present AlN/Si based Surface Acoustic Wave (SAW) devices exploited as high sensitivity temperature sensors. The experimental results show that the resonance frequency varies between 3.2 and 5.5 GHz, depending on the finger/Interdigit spacing width and metal thickness. The temperature measurements were performed between -250 degrees C and +150 degrees C in a cryostat. The sensitivities were investigated between 24-150 degrees C and the values were compared to the results obtained for similar GaN/Si based SAW structures.

The films of SiGe nanocrystals in SiO2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.

Here we report a ferroelectric capacitor structure obtained by alternating ferroelectric and insulator thin-film layers which allows an increase of up to 2(n) polarization states, with n the number of ferroelectric layers. Four and up to eight distinct, stable and independently addressed polarization states are experimentally demonstrated in this work. The experimental findings are supported by a theoretical model based on the Landau-Ginzburg-Devonshire theory. The key parameter is the change in the strain conditions of ferroelectric layers induced by the insulating separator. Notably, the 2(n) increase in the storage capacity can be achieved without major changes in the present technology used for FeRAM devices. The test structures demonstrate very good memory characteristics such as retention and fatigue, opening the way towards the design of high density ferroelectric memories.

The integration of ferroelectrics in perovskite solar cells is proposed as possible way to enhance charge collection efficiency. First results on solar cellmanufactured with PbTiO3 (PTO) instead of TiO2 have shown negligible values for the power conversion efficiency (PCE). This is explained by the high serial resistance of sol-gel deposited PTO on F:SnO2 electrodes (FTO). Although PTO layer has remnant polarization of 22 mu C/cm(2), the high potential barrier (0.25 +/- 0.05 eV) at the FTO/PTO interface and lowcarriermobility (10(-8) cm(2) V-1 s(-1)) compared to TiO2 leads to high serial resistance. Better results were obtained with thinner PTO layers grown by pulsed laser deposition, with PCE values up to 0.6%. Further enhancement was obtained by replacing PTO with BaTiO3 (BTO), with PCE value reaching about 0.8% after poling the cell with +3 V. The most important finding was that the magnitude of the short circuit current increases with the amplitude of the poling voltage while the value of the open-circuit voltage remains about the same, around 0.9 V. This is explained through more efficient collection of the charges generated under illumination in the absorber layer due to the polarization that is present in the ferroelectric film. (C) 2017 Elsevier Ltd. All rights reserved.