National Institute Of Materials Physics - Romania

. The study on efflorescence in salts collected from Curtea de Arges cathedral's exterior wall during restorations aimed to characterize compounds and lithic material using SEM-EDX, XRD, Raman, FTIR. Radiocarbon measurements using AMS method and FTIR results demonstrate decarbonation/recarbonation at the compound-lithic interface but further research is required.

High density samples (92-94.5 %) of MgB2 were prepared by Spark Plasma Sintering (SPS). The on-off pulsed current patterns of SPS processing were 8-4, 12-2, 24-2, 99-1. Patterns with more on pulses favor formation of a higher amount of the secondary MgB4 phase through the decomposition of MgB2. They also promote enhancement of larger MgO crystallites without a strong increase in the amount of this phase. Densification rate and pressure in the SPS chamber show a similar behavior, but their amplitude varies and the temperatures defining different stages present some shifts. As-revealed differences induced by pulsed patterns impact superconducting properties in a complex manner. An attempt to assess correlations between the pattern and different superconducting parameters is presented.

Among various "families" of iron-based superconductors, the quite recently discovered AeAFe(4)As(4) (where Ae is an alkali-earth metal and A is an alkali metal) has high critical current density, a very high upper critical field, and a low anisotropy, and has recently received much interest for the possibility of high magnetic field applications at the liquid hydrogen temperature. We have performed DC magnetization relaxation and frequency-dependent AC susceptibility measurements on high-quality single crystals of CaKFe4As4 with the aim of determining the pinning potential U*. The temperature dependence of U* displays a clear crossover between elastic creep and plastic creep. At temperatures around 27-28 K, U* has a very high value, up to 1200 K, resulting in an infinitesimally small probability of thermally activated flux jumps. From the dependence of the normalized pinning potential on irreversible magnetization, we have determined the creep exponents in the two creep regimes, which are in complete agreement with theoretical models. The estimation of the pinning potential from multifrequency AC susceptibility measurements was possible only near the critical temperature due to equipment limitations, and the resulting value is very close to the one that resulted from the magnetization relaxation data. Magnetic hysteresis loops revealed a second magnetization peak and very high values of the critical current density.

Cu2ZnSnSe4 thin films have been synthesized by employing two magnetron-sputtering depositions, interlaced with two sequential post-deposition heat treatments in low vacuum, Sn+Se and Se-rich atmospheres at 550 degrees C. By employing successive structural analysis methods, namely Grazing Incidence X-Ray Diffraction (GIXRD) and Raman Spectroscopy, secondary phases such as ZnSe coexisting with the main kesterite phase have been identified. SEM peered into the surface morphology of the samples, detecting structural defects and grain profiles, while EDS experiments showed off-stoichiometric elemental composition. The optical bandgaps in our samples were calculated by a widely used extrapolation method from recorded transmission spectra, holding values from 1.42 to 2.01 eV. Understanding the processes behind the appearance of secondary phases and occurring structural defects accompanied by finding ways to mitigate their impact on the solar cells' properties is the prime goal of the research beforehand.

One of the new materials for next-generation thin film solar cells is Cu2ZnSnSe4 (CZTSe). However, achieving a single-phase CZTSe compound remains a challenge. This study describes the development of Cu2ZnSnSe4 thin films through the sequential deposition of stacked films of non-stoichiometric Cu2SnSe3 (CTSe) and ZnSe by magnetron sputtering. The structural, morphological, and electrical properties as well as the surface chemistry of the films were investigated and compared depending on the growth sequence of the thin films. By using Raman spectroscopy and grazing incidence X-ray diffraction, the tetragonal CZTSe structure was confirmed. Scanning electron microscopy and energy-dispersive spectroscopy measurements of the morphological and compositional properties indicated large grains and dense surfaces with an elemental composition close to the desired stoichiometry in SLG\SnSe2\Cu\ZnSe and SLG\SnSe2\Cu2Se\ZnSe stacks. To ascertain the surface chemistry and unique characteristics of the produced films, additional X-ray photoemission spectroscopy experiments were carried out. The optimal band gap values for the absorber layers were found using conventional spectroscopy, and they ranged from 0.88 to 1.47 eV. According to the electrical measurements, all the films were p-type and have high carrier concentrations between 1016 and 1020 cm-3. Our findings demonstrate that employing a sequential deposition approach and annealing in different atmospheres can yield CZTSe absorber layers with desirable properties, overcoming the challenge of non-stoichiometric CTSe precursors.

Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high-performance, energy-efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far-reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field-effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf(0.5)Z(r0.5)O(2) film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3-delta and a top metal. Upon a low voltage of less than 2 V, the field-effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short- and long-term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.

A novel high-entropy perovskite powder with the composition Bi0.2K0.2Ba0.2Sr0.2Ca0.2TiO3 was successfully synthesized using a modified Pechini method. The precursor powder underwent characterization through Fourier Transform Infrared Spectroscopy and thermal analysis. The resultant Bi0.2K0.2Ba0.2Sr0.2Ca0.2TiO3 powder, obtained post-calcination at 900 C-degrees, was further examined using a variety of techniques including X-ray diffraction, Raman spectroscopy, X-ray fluorescence, scanning electron microscopy, and transmission electron microscopy. Ceramic samples were fabricated by conventional sintering at various temperatures (900, 950, and 1000 C-degrees). The structure, microstructure, and dielectric properties of these ceramics were subsequently analyzed and discussed. The ceramics exhibited a two-phase composition comprising cubic and tetragonal perovskites. The grain size was observed to increase from 35 to 50 nm, contingent on the sintering temperature. All ceramic samples demonstrated relaxor behavior with a dielectric maximum that became more flattened and shifted towards lower temperatures as the grain size decreased.

Fine-tuning of grain sizes can significantly influence the interaction between different dielectric phenomena, allowing the development of materials with tailored dielectric resistivity. By virtue of various synthesis mechanisms, a pathway to manipulate grain sizes and, consequently, tune the material's dielectric response is revealed. Understanding these intricate relationships between granulation and dielectric properties can pave the way for designing and optimizing materials for specific applications where tailored dielectric responses are sought. The experimental part involved the fabrication of dense BCT-BZT ceramics with different grain sizes by varying the synthesis (conventional solid-state reaction route and sol-gel) and consolidation methods. Both consolidation methods produced well-crystallized specimens, with Ba0.85Ca0.15O3Ti0.9Zr0.1 (BCTZ) perovskite as the major phase. Conventional sintering resulted in microstructured and submicron-structured BCT-BZT ceramics, with average grain sizes of 2.35 mu m for the solid-state sample and 0.91 mu m for the sol-gel synthesized ceramic. However, spark plasma sintering produced a nanocrystalline specimen with an average grain size of 67.5 nm. As the grain size decreases, there is a noticeable decrease in the maximum permittivity, a significant reduction in dielectric losses, and a shifting of the Curie temperature towards lower values.

This study focuses on the properties of the BiOi (interstitial Boron-interstitial Oxygen) and CiOi (interstitial Carbon-interstitial Oxygen) defect complexes by 5.5MeV electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10 Omega center dot cm were irradiated with fluence values between 1x10(15) cm(-2) and 6x10(15) cm(-2). Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and developing theoretical models for simulating both types of BiOi signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density N-eff profile as well as the occupation of the BiOi defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and..eff) extracted from current-voltage and capacitance-voltage measurements at 20 degrees C are also presented and discussed.

Photocatalysis is one of the approaches for solving environmental issues derived from extremely harmful pollution caused by industrial dyes, medicine, and heavy metals. Titanium dioxide is among the most promising photocatalytic semiconductors; thus, in this work, TiO2 powders were prepared by a hydrothermal synthesis using titanium tetrachloride TiCl4 as a Ti source. The effect of the hydrochloric acid (HCl) concentration on TiO2 formation was analyzed, in which a thorough morpho-structural analysis was performed employing different analysis methods like XRD, Raman spectroscopy, SEM/TEM, and N-2 physisorption. EPR spectroscopy was employed to characterize the paramagnetic defect centers and the photogeneration of reactive oxygen species. Photocatalytic properties were tested by photocatalytic degradation of the rhodamine B (RhB) dye under UV light irradiation and using a solar simulator. The pH value directly influenced the formation of the TiO2 phases; for less acidic conditions, the anatase phase of TiO2 crystallized, with a crystallite size of approximate to 9 nm. Promising results were observed for TiO2, which contained 76% rutile, showing a 96% degradation of RhB under the solar simulator and 91% under UV light after 90 min irradiation, and the best result showed that the sample with 67% of the anatase phase after 60 min irradiation under the solar simulator had a 99% degradation efficiency.