National Institute Of Materials Physics - Romania

A series of 3,4,5-tridodecyloxybenzyl pyridinium salts derived from 4-hydroxypyridine has been designed and prepared. The liquid crystalline properties of these compounds were investigated by polarized optical microscopy, differential scanning calorimetry and powder X-ray diffraction while their thermal stability was studied by thermogravimetric analysis. The N-3,4,5-tridodecyloxybenzyl-4-pyridone intermediate shows a monotropic columnar hexagonal mesophase ranging from 56 degrees C down to room temperature while the corresponding bromide dodecyl O-alkylated pyridinium salt shows one enantiotropic columnar mesophase and one additional monotropic columnar phase at lower temperatures. Replacing bromide ion (Br-) with other counterions (NO3-, BF4- and PF6-) resulted in mesophase suppression. These luminescent pyridinium salts show weak emission in dichloromethane solutions at room temperature and a pronounced red-shifted emission in solid state. Photoluminescent properties of the pyridinium salts do not depend significantly on the nature of counterion employed. (C) 2014 Elsevier B.V. All rights reserved.

The aim of this research is to prepare amorphous thin films of undoped gallium sulphide and doped with rare-earth sulphides, of rare-earth sulphides and to investigate their physical properties. We have prepared thin amorphous films of Ga2S3, EuS, Er2S3, Gd2S3, and Ga2S3 doped with rare-earth sulphides (Ga2S3:EuS, Ga2S3:Er2S3, Ga2S3:Gd2S3) by Pulsed laser Deposition (PLD). The corresponding targets for preparation of amorphous thin films were obtained by Spark Plasma Sintering (SPS) from commercially available powders of binary sulphides. The structural results for the undoped and doped Ga2S3 thin films indicate a packing of disordered layers similar to that of amorphous As2S3. Femtosecond laser irradiation of the Ga2S3 thin films shows a photoexpansion effect at low laser power (85-100 mW) and an ablation effect at higher laser power (above 105 mW). The threshold between low power and high power pulses is situated at higher value for Ga2S3 (100 mW) in comparison with the case of As2S3 thin films (20 mW). (C) 2014 Elsevier B.V. All rights reserved.

Spark plasma sintering (SPS) was applied for fabrication of dense (relative density > 97 %) bulk MgB2 samples added with Ge. Mixtures of MgB2 and Ge powders with starting compositions (MgB2) Ge (x) , x=0.005, 0.01, and 0.03 were used. Added samples show enhancement of the critical current density at high magnetic fields when compared to a pristine reference sample. The optimum composition is for x=0.005 and for this sample J (c)(20 K) =10(2)A/cm (2) is obtained at 5 T, while for the reference sample is obtained at 3.9 T. Ge does not substitute in the crystal lattice of MgB2 and T (c,onset) or T (c,midpoint) from magnetization measurements scatter within 0.15 or 0.3 K, respectively.

Quasi-static polarization induced by dc electric field was studied in a broad range of temperatures in epitaxial films of relaxor ferroelectric PbMg1/3Nb2/3O3 and PbSc1/2Nb1/2O3. The electric field was applied and the response was measured along the out-of-plane crystal direction of the epitaxial perovskite-structure (001) oriented films. The films remained in the relaxor state in zero-field cooling. A new polar state can be induced by electric field at a critical temperature below 100 K. The critical field and the induced polarization increased on cooling and reached the bulk-like values at 20 K. The orientational anisotropy of thin-film dipolar systems is discussed as a possible reason for the observed stable relaxor state.

We report on thin film deposition by matrix-assisted pulsed laser evaporation of simple hydroxyapatite (HA) or silver (Ag) doped HA combined with the natural biopolymer organosolv lignin (Lig) (Ag:HA-Lig). Solid cryogenic target of aqueous dispersions of Ag:HA-Lig composite and its counterpart without silver (HA-Lig) were prepared for evaporation using a KrF* excimer laser source. The expulsed material was assembled onto TiO2/Ti substrata or silicon wafers and subjected to physical-chemical investigations. Smooth, uniform films adherent to substratum were observed. The chemical analyses confirmed the presence of the HA components, but also evidenced traces of Ag and Lig. Deposited HA was Ca deficient, which is indicative of a film with increased solubility. Recorded X-ray Diffraction patterns were characteristic for amorphous films. Lig presence in thin films was undoubtedly proved by both X-ray Photoelectron and Fourier Transform Infra-Red Spectroscopy analyses. The microbiological evaluation showed that the newly assembled surfaces exhibited an inhibitory activity both on the initial steps of biofilm forming, and on mature bacterial and fungal biofilm development. The intensity of the antibiofilm activity was positively influenced by the presence of the Lig and/or Ag, in the case of Staphylococcus aureus, Pseudomonas aeruginosa and Candida famata biofilms. The obtained surfaces exhibited a low cytotoxicity toward human mesenchymal stem cells, being therefore promising candidates for fabricating implantable biomaterials with increased biocompatibility and resistance to microbial colonization and further biofilm development.

Titanium films sputtered on FTO glass were used for obtaining highly oriented titania nanotubes via anodization technique. Then, pulsed laser deposition of CdS was carried out for sensitizing of similar to 60 nm wide titania nanotubes by applying 50, 100, 150 or 200 subsequent laser pulses. Scanning electron microscopy was used to indicate which samples had the open nanotubular structure of titania preserved after the deposition of CdS. Energy dispersive spectroscopy showed that a higher number of applied laser pulses results in the increase of Cd and S quantity within samples. Pulsed laser deposition technique was also employed for the fabrication of PbS counter electrode. I-V characteristics of the photovoltaic cells consisting the obtained electrodes were measured and compared under one-sun illumination. The photovoltaic cell with photoanode sensitized with CdS by applying 150 laser pulses showed the highest current density and voltage among the investigated cell.

Zinc silicate ceramics have been prepared by using conventional ceramic technology. Morphological, structural, and dielectric characterizations of the samples were performed using scanning electron microscopy, X-ray diffraction, and terahertz time-domain spectroscopy. The achieved absorption properties of zinc silicates make them very attractive solutions for submillimeter-wave applications.

Photoelectron spectroscopy studies of (001) oriented PbTi0.8Zr0.2O3 (PZT) single crystal layers with submicron resolution revealed areas with different Pb 5d binding energies, attributed to the different charge and polarization states of the film surface. Two novel effects are evidenced by using intense synchrotron radiation beam experiments: (i) the progressive increase of a low binding energy component for the Pb core levels (evidenced for both 5d and 4f, on two different measurement setups), which can be attributed to a partial decomposition of the PZT film at its surface and promoting the growth of metallic Pb during the photoemission process, with the eventuality of the progressive formation of areas with downwards ferroelectric polarization; (ii) for films annealed in oxygen under clean conditions (in an ultrahigh vacuum installation) a huge shift of the Pb 5d core levels (by 8-9 eV) towards higher binding energies is attributed to the formation of areas with depleted mobile charge carriers, whose surface density is insufficient to screen the depolarization field. This shift is attenuated progressively with time, as the sample is irradiated with high flux soft X-rays. The formation of these areas with strong internal electric field promotes these films as good candidates for photocatalysis and solar cells, since in the operation of these devices the ability to perform charge separation and to avoid electron-hole recombination is crucial.

Water splitting by means of semiconducting photoelectrodes and solar light represents a promising alternative to conventional fossil fuel economy. In this process the photoactive electrode absorb sunlight directly thus initiating the photochemical reaction which create excess electrons in the conduction band of the semiconducting electrode. Titanium doped iron oxide seems to be a promising semiconducting material for photoelectrodes. Consequently, we investigated the effect of Ti doping on the structure, electrical and photoelectrochemical properties alpha-Fe2O3. The Ti doped alpha-Fe2O3 were prepared by a slightly modified mixed oxide route, consisting in a prolonged mixing of the raw materials in a high energy planetary ball mill until the particles decreased to the nanometric sizes. Optimum results were obtained for samples doped with 5 at. % titanium and sintered at 1200 degrees C. Photocurrents as high as 8.4 mA/cm(2), for illumination from a 300 W xenon lamp, were recorded for such samples. It is hoped that such photoelectrodes show promise for water splitting.