National Institute Of Materials Physics - Romania

The low-temperature states of bosonic fluids exhibit fundamental quantum effects at the macroscopic scale: the best-known examples are Bose-Einstein condensation and superfluidity, which have been tested experimentally in a variety of different systems. When bosons interact, disorder can destroy condensation, leading to a 'Bose glass'. This phase has been very elusive in experiments owing to the absence of any broken symmetry and to the simultaneous absence of a finite energy gap in the spectrum. Here we report the observation of a Bose glass of field-induced magnetic quasiparticles in a doped quantum magnet (bromine-doped dichloro-tetrakis-thiourea-nickel, DTN). The physics of DTN in a magnetic field is equivalent to that of a lattice gas of bosons in the grand canonical ensemble; bromine doping introduces disorder into the hopping and interaction strength of the bosons, leading to their localization into a Bose glass down to zero field, where it becomes an incompressible Mott glass. The transition from the Bose glass (corresponding to a gapless spin liquid) to the Bose-Einstein condensate (corresponding to a magnetically ordered phase) is marked by a universal exponent that governs the scaling of the critical temperature with the applied field, in excellent agreement with theoretical predictions. Our study represents a quantitative experimental account of the universal features of disordered bosons in the grand canonical ensemble.

The growth of La5Ca9Cu24O41 thin films on SrLaAlO4 (1 0 0) and Gd3Ga5O12 (1 0 0) substrates by pulsed laser deposition is reported in this paper. The influence of deposition process parameters, such as oxygen pressure, substrate temperature, and laser repetition rate, on the crystallinity, orientation and microstructure of the films has been investigated. X-ray diffraction and atomic force microscopy studies showed a clear dependence of the film crystallographic orientation and morphology (grain size) on the substrate temperature and the oxygen pressure used in the deposition process. (c) 2012 Elsevier B.V. All rights reserved.

The hysteretic behavior of the epitaxial Pb(Zr,Ti)O-3 thin films with different top metal electrodes is studied, with emphasis on the influence of the leakage current and trap generation current on the shape of the loop as well as on the magnitude of the measured polarization. Cu, Pt, and SrRuO3 were used as top contacts and important differences were observed for measurements performed in both dynamic and static modes, although the contacts were deposited on the same epitaxial Pb(Zr,Ti)O-3 film grown on SrRuO3/SrTiO3 substrate. A peculiar behavior was observed especially for the static hysteresis loops where, depending of the top contact, the loop is influenced mainly by the leakage current (Pt) or by the trap generation current (Cu and SrRuO3). The last one can contribute with an additive charge, having a linear dependence on the applied voltage, as suggested by the simple model developed to explain the abnormally high values of the dielectric constant extracted from the linear part of the static hysteresis loop. It is concluded that the properties of the top electrode interface can significantly impact the hysteretic behavior of the ferroelectric films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754318]

Transparent ZnO films are synthesized by RF-magnetron sputtering (1.78 MHz) onto glass substrates, using a mild-pressed ZnO powder target. The depositions were carried at three inert argon pressures (0.25 Pa, 0.30 Pa, and 0.45 Pa) at two substrate temperatures (100 degrees C and 400 degrees C). The role of the sputtering conditions on ZnO thin films nanostructuring, optical properties and morphology is investigated by Xray diffraction (XRD), X-ray reflectometry (XRR) and Spectroscopic ellipsometry (SE). XRD investigations revealed that ZnO films show a (0 0 l) texture with nanosized crystallites. Right-angle asymmetry of the (0 0 2) diffraction peak is observed. The peak profile analysis using pseudo-Voigt functions unveils a double overlapped peak structure with different coherent zone size values. A double layer structure is evidenced by analyzing the XRR data. Samples prepared at 0.3 Pa at a temperature of 400 degrees C have a similar to 4 nm bottom layer consisting of highly depleted in oxygen ZnO1-x structure, continued by a 53 nm top layer of textured ZnO. Electrical measurements show that the temperature dependence of the conductivity is well described by the Mott variable range hopping (VRH) law. The samples obtained at 400 degrees C have a significantly lower resistivity. (C) 2012 Elsevier B. V. All rights reserved.

A current of electrons traversing a landscape of localized spins possessing non-coplanar magnetic order gains a geometrical (Berry) phase, which can lead to a Hall voltage independent of the spin-orbit coupling within the material-a geometrical Hall effect. Here we show that the highly correlated metal UCu5 possesses an unusually large controllable geometrical Hall effect at T < 1.2 K due to its frustration-induced magnetic order. The magnitude of the Hall response exceeds 20% of the nu = 1 quantum Hall effect per atomic layer, which translates into an effective magnetic field of several hundred Tesla acting on the electrons. The existence of such a large geometric Hall response in UCu5 opens a new field of enquiry into the importance of the role of frustration in highly correlated electron materials.

We present here results on samarium oxide thin films, obtained by pulsed laser deposition and by radio frequency assisted pulsed laser deposition. Three different substrate types were used: silicon, platinum covered silicon and titanium covered silicon. The influence of the deposition parameters (oxygen pressure and laser fluence) on the structure and morphology of the thin films was studied. The substrate-thin film interface zone was investigated; the optical and electrical properties (the losses, dielectric constant and leakage currents) were also determined. (C) 2012 Elsevier B.V. All rights reserved.

(Na1/2Bi1/2)TiO3 doped in situ with 11 inol% BaTiO3 (NBT-BT0.11) powders were synthesized by a sol-gel method, and the electrical properties of the resulting ceramics were investigated. The powders consisting of uniform and fine preliminary particles of about 50 nm were prepared by calcining the gel precursor at 700 degrees C. (Na1/2Bi1/2)(0.89)Ba0.11TiO3 ceramics, sintered at temperatures up to 1150 degrees C have a rhombohedral symmetry while the ceramic sintered at 1200 degrees C exhibits a tetragonal crystalline structure. The ceramics show high dielectric constant (epsilon(r) similar to 5456), dielectric loss of 0.02, depolarization temperature T-d similar to 110 degrees C and temperature corresponding to the maximum value of dielectric constant T-m similar to 262 degrees C. The dielectric constant (epsilon(33)) and the piezoelectric constant (d(33)) attain the maximum values of 924 and 13 pC/N, respectively, while the electromechanical coupling factor (k(p)) value is 0.035. The NBT-BT0.11 ceramics derived from sol-gel present high mechanical quality factor (Q(m) similar to 860). The dielectric and piezoelectric properties values of NBT-BT0.11 ceramics derived from sol-gel are smaller than those of samples produced by the conventional solid state reaction method, due to the grains size and oxygen vacancies that generate dipolar defects. (C) 2012 Elsevier Ltd. All rights reserved.

Superconducting bulks of MgB2 were obtained by an ex-situ two-temperature route applied to spark plasma sintering (SPS). Processing of samples was performed at lower temperatures than previously reported. Samples produced by the two-temperature route show a higher morphological uniformity, a higher density (above 98%), a higher Vickers hardness, and undesirable stronger microscale flux jumps, as indicated by magnetic relaxation measurements when compared to a sample obtained by the one-temperature route (95.3% relative density). At the same time, all sintered samples show approximately constant crystallite size, critical current density, irreversibility field, critical temperature, weight fraction of impurity phases (MgB4 and MgO), and the amount of carbon accidentally introduced during SPS processing. (C) 2012 Elsevier B.V. All rights reserved.

The rectifying properties of Nb:SrTiO3-Bi1-xGdxFeO3-Pt structures (x = 0, 0.05, 0.1) displaying diode-like behavior were investigated via current-voltage characteristics at different temperatures. The potential barrier was estimated for negative polarity assuming a Schottky-like thermionic emission with injection controlled by the interface and the drift controlled by the bulk. The height of the potential barrier at the Nb:SrTiO3-Bi1-xGdxFeO3 interface increases with Gd doping. The results are explained by the partial compensation of the p-type conduction due to Bi vacancies with Gd doping in addition to the shift of the Fermi level towards the middle of the bandgap with increasing dopant concentration. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729816]

High quality pulsed laser deposited lead zirconate titanate (PZT) films are obtained by pulsed laser deposition on SrRuO3(111) single crystal layers and characterized by X-ray photoelectron spectroscopy (XPS), to determine the surface composition. It is found that a minor amount of Pb forms PbO2 at the surface and also some Pb is included into the contamination layer, in form of a Pb(CO3)2 layer of about 1?nm thickness, occupying about one quarter of the PZT surface. The stoichiometry of the outermost 45?nm layers yielded as PbZr0.25Ti0.80O2.5, which suggest the formation of an oxygen depleted, Brownmillerite-like layer at the surface, of at least 5?nm thickness.