National Institute Of Materials Physics - Romania

Epitaxial [gamma-Fe2O3-BiFeO3]/Bi3.25La0.75Ti3O12 and Bi3.25La0.75Ti3O12/[gamma-Fe2O3-BiFeO3] composite bilayers were grown on SrRuO3 coated (111) SrTiO3 substrates in order to investigate the influence of the morphology of the gamma-Fe2O3-BiFeO3 self assembled nanocomposite layer on the multiferroic properties of the bilayer. Both types of bilayers exhibit high resistivity and simultaneously ferroelectricity and ferrimagnetism at room temperature. When the gamma-Fe2O3-BiFeO3 composite layer is sandwiched between the Bi3.25La0.75Ti3O12 film and the substrate, the BiFeO3 component is not only subjected to epitaxial strain induced by the surface on top of which it grows but also to elastic interactions with the Bi3.25La0.75Ti3O12 capping layer. The latter indeed reduce the amount of gamma-Fe2O3 inclusions, affects the morphology of the grains in the gamma-Fe2O3-BiFeO3 layer, and increases the shape anisotropy of the gamma-Fe2O3 inclusions. Additionally, this modification in the microstructure of the gamma-Fe2O3-BiFeO3 layer induces an imprint in the ferroelectric hysteresis loop as well as a decrease in the saturation magnetization, and its magnetic easy axis direction changes from in-plane to out-of plane. (c) 2010 American Institute of Physics. [doi:10.1063/1.3514591]

Barium magnesium tantalate thin films are attractive materials for high-performance dielectric ceramics for microwave devices, exhibiting a high dielectric constant, a low loss and a near-zero temperature coefficient. We report on the successful deposition of polycrystalline barium magnesium tantalate thin films by RF magnetron sputtering method. The structural and morphological characterization data are presented.

Bioglass coatings were prepared by radio frequency magnetron sputtering deposition at low temperature (150 degrees C) onto silicon substrates. The influence of argon pressure values used during deposition (0.2 Pa, 0.3 Pa and 0.4 Pa) on the short-range structure and biomineralization potential of the bioglass coatings was studied. The biomineralization capability was evaluated after 30 days of immersion in simulated body fluid. SEM-EDS, XRD and FTIR measurements were performed. The tests clearly showed strong biomineralization features for the bioglass films. The thickness of the chemically grown hydroxyapatite layers was more than twice greater for the BG films deposited at the highest working pressure, in comparison to those grown on the films obtained at lower working pressures. The paper attempts to explain this experimental fact based on structural and compositional considerations. (C) 2010 Elsevier B.V. All rights reserved.

Single-phase Ba(Mg1/3Ta2/3)O-3 thin films were prepared by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) starting from a bulk ceramic target synthesized by solid state reaction. Atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry were used for morphological, structural and optical characterization of the BMT thin films. The X-ray diffraction spectra show that the films exhibit a polycrystalline cubic structure. From spectroscopic ellipsometry analysis, the refractive index varies with the thin films deposition parameters. By using the transmission spectra and assuming a direct band to band transition a band gap value of approximate to 4.72 eV has been obtained. (C) 2010 Elsevier B.V. All rights reserved.

Investigations on dielectric on compact resonators antennas with enhanced characteristics are described in this paper. The dielectric resonators were of (Zr(0.8)Sn(0.2))TiO(4) ceramic material (ZST). It is shown that the doping with Mg reduces the sintering temperature and provides a high dielectric constant, low loss and high thermal stability in microwaves. The coupling with an extra resonator can offer a substantial bandwidth enhancement. Moreover, antenna array with four antenna elements provides a higher gain and a more directive radiation pattern.

We report on the synthesis of 700 nm thick bioglass thin films by magnetron sputtering from 45S5 bioglass targets in the argon atmosphere. The adhesion of films to Ti substrates increased 1 75 times when introducing an similar to 70 nm thick mixed glass-Ti buffer layer (BG(1-x)Ti(x) (x = 0-1)) with gradient of composition by co-sputtering. The morphological and structural properties of the films were studied by XRD, ETIR and microscopic techniques, showing an improvement after the two-hour thermal air treatment at 650 degrees C. We investigated in vitro the viability and proliferation of human osteoblast cells cultivated onto the surface of the films The osteoblasts spread over the surface adopting typical polyhedral shapes with numerous focal adhesion points and protrusions infiltrating deep into the films. We assigned this evolution to the improved mechanical properties and enhanced bioactivity due to the prevalent formation of combeite and wollastonite crystalline phases in the heat treated bioglass films (C) 2010 Elsevier B.V All rights reserved

A single ferroelectric Schottky diode was obtained on a SrRuO3-Pb(Zr0.2Ti0.8)O-3-Ta (SRO-PZT20/80-Ta) structure in which the SRO-PZT20/80 interface is the rectifying contact and the PZT20/80-Ta interface behaves as a quasiohmic contact. Both the capacitance-voltage (C-V) and the current-voltage (I-V) characteristics show the memory effect due to the ferroelectric polarization. However, retention studies had revealed that only the "down" orientation of ferroelectric polarization is stable in time (polarization oriented from top to bottom contact). The analysis of the experimental results suggests that the PZT20/80 is n type and that the stable orientation of polarization is related to the presence of a depletion region at the SRO-PZT20/80 Schottky interface.

Electron states at the SiO2/4H-SiC interface have been investigated using capacitor structures and especially, the influence of excess nitrogen, introduced by ion implantation, at the interface is studied in detail. Implanted and nonimplanted n-type samples with an interfacial concentration of nitrogen of similar to 10(19) cm(-3) and 10(16) cm(-3), respectively, were analyzed by capacitance-voltage (C-V) measurements, performed at different temperatures and probe frequencies, and thermal dielectric relaxation current (TDRC) measurements performed in the temperature range of 35-295 K. Three main categories of electron states are disclosed, true interface states (D-it), fast near interface states (NIToxfast) and slow near interface states (NIToxslow). The density versus energy distributions of D-it and NIToxfast have been deduced from the TDRC data and they are shown to give a close quantitative agreement with the shape and frequency dependence of the C-V curves. Further, the amount of NIToxslow extracted from TDRC is demonstrated to be responsible for the parallel shifts and hysterezis effects occurring in the C-V characteristics. All three categories of electron states are reduced in concentration in the implanted samples. This holds particularly for NIToxfast with a peak at similar to 0.1 eV below the conduction band edge of 4H-SiC that is suppressed by at least two orders of magnitude relative to the nonimplanted samples. The decrease for D-it is also substantial (a factor of similar to 10) while the loss for NIToxslow is considerably smaller (only similar to 30%). The results provide firm evidence that NIToxfast and NIToxslow do not originate from the same kind of defect center. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457906]

Aluminum doped Zinc Oxide (AZO) and Lithium doped Zinc Oxide (LZO) thin films are obtained by Pulsed Laser Deposition (PLD) method. These films are characterized by using Spectroscopic Ellipsometry (SE), X-ray Diffraction (XRD) and Photoluminescence (PL). By modeling the ellipsometry spectra we get the dielectric functions, the optical band gap E(g), and the electrical properties. Our results show the influence of the processing parameters on the optical and structural properties of doped ZnO thin films. The post-annealing treatment applied to AZO thin films, changes strongly the optical properties, by lowering the resistivity and red-shifting the band gap. (C) 2009 Elsevier B.V. All rights reserved.