National Institute Of Materials Physics - Romania

The rad-hard EPI diode was characterized envisaging its application in on-line 1.5 MeV electron beam dosimetry in radiation processing. As expected from a current sensitivity loss (13.5%) to the accumulated dose up to 750 kGy, the EPI diode exhibited good short-term repeatability (CV = 1.9%) which is better than that required for CTA dosimeters, routinely applied in radiation processing. The dose-response curve of the EPI diode was fitted by a second order polynomial function for doses up to 775 kGy. In addition, some preliminary studies on the radiation damage effects induced in this diode using a Capacitance Deep Level Transient Fourier Spectroscopy system are presented. The results showed that up to almost 1.5 MGy only 3 defects (VO, V-2 and CiOi) can influence the carrier lifetime and current generated. Further radiation damage studies are under way.

Three ceramic magnetic compositions within the CuZnTi ferrite system, having the Curie temperatures centered around 60 degrees C, 80 degrees C and 100 degrees C, respectively were investigated in order to determine the time-temperature stability of their main magnetic properties. Rates of changes of 33, 66 and 100 ppm/h of the maximum slopes of permeability were found for the samples aged at 60 degrees C, 80 degrees C and 100 degrees C, respectively. The samples aged at temperatures higher than 200 degrees C show a rather sudden decrease of the maximum slope of permeability, but no shift of the Curie temperature and the working point, corresponding to the temperature where the slope has the maximum value. The results are discussed in terms of the migration processes of the cations, especially Cu2+, from metastable positions on which they were frozen during the rapid cooling of the samples from the sintering temperature, to the more stable ones, namely the octahedral sites into the spinel lattice.

Nano-hydroxyapatite bio-ceramics were synthesized by sol-gel method. The gel was dried at 80 degrees C for 96 h. The dried gels were individually heated at a rate of 5 degrees C/min up to 600 degrees C, 800 degrees C, and 1000 degrees C. X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were used for to characterize the composition, morphology and particle size of samples. At 800 degrees C a small amount of CaO (about 0.3 wt%) was detected in which increased after annealing at 1000 degrees C (about 1.1 wt%). The crystallites are elongated along the c crystallographic axis, but the size anisotropy decreases with increasing temperature above 800 degrees C. The size along the elongation axis increased from 43 nm at 80 degrees C to about 143 nm at 1000 degrees C, as determined by XRD, and from 120 to 280 nm, as measured by TEM. The functional groups were analyzed using Fourier transform infrared (FTIR) and Raman spectroscopies confirming the presence of various and PO43 and OH- bands in the samples. After calcination at 1000 degrees C the bands are more intense which indicates an increase in the cristallynity. The photoluminescence (PL) of HAp treated at various temperatures (80, 600, 800, 1000 degrees C) was also studied. hFOB 1.19 osteoblats cells were used to determine cell proliferation, viability and citotoxicity after interaction with the prepared bioceramics. To evaluate cell proliferation rate quantitative by the hFOB 1.19 cells on HAp samples were cultured to 4 days. Cellular morphology was investigated using FESEM to obtain qualitative information of osteoblast cells on HAp samples. The number of hFOB 1.19 cells on control HAp_80, HAp_600, HAp_800 and HAp_1000 was 400 +/- 30, 360 +/- 25, 350 +/- 21, 320 +/- 16 and 300 +/- 10 after 4 days. Our results proved that the HAp sintered at 1000 degrees C promoted osteoblast cell attachment and adhesion.

This paper presents the preparation and investigation of structure and electrical properties of nanostructures consisting of Si1-xGex nanocrystals. Nanostructures were prepared by RF magnetron sputtering, followed by thermal annealing. X-ray diffraction, TEM, high resolution TEM and SAED measurements were performed. Current-voltage and current-temperature characteristics were taken. Nanostructures have different electrical behavior. Current-voltage curves are linear, while current-temperature curves are dependent on the annealing temperature. In films annealed at 650 degrees C, electrical transport is controlled by quantum confinement effect and localized states (current-temperature characteristics), while in films annealed at 900 degrees C it is controlled by tunneling of thermally activated carriers between neighboring nanocrystals.

The effect of Fe, respective Cu, additions as substitute for Ni in NiTi shape memory alloys (SMAs) on the delaying of its phase transition and narrowing hysteresis are well known, NiTi-Fe and NiTi-Cu SMAs having applications especially to the actuators that require such properties. These SMAs are currently produced by conventional melting methods, which are energo-intensive and impose very severe processing conditions to avoid contamination. The results of researches presented in this paper prove the possibility of these SMAs obtaining by powder metallurgy via reactive sintering - more advantageous from both technical and economic point of view. A beneficial effect on both sintering and homogeneity of the obtained SMAs proved to have a controlled mechanical alloying applied to powder mixture before compacting and sintering.

Smooth, transparent and highly oriented nanostructured ZnO films were synthesized by RF-magnetron sputtering onto Si(100) substrates. A mild-pressed zinc oxide powder target was used for all depositions. The sputtering parameters were varied in order to obtain structures with good adherence and crystallinity. The depositions were carried out in inert argon atmosphere at four sputtering pressures (0.2 Pa, 0.25 Pa, 0.3 Pa and 0.45 Pa). ZnO films were deposited at 150 degrees C. The films were characterized from structural (XRD) and morphological (AFM) point of view. The influence of each sputtering parameter on the morphological and structural properties is discussed.

The Ba1-xPbxNd2Ti5O14 ceramic material (BNT) is very attractive for applications at frequencies around few GHz [1]. The temperature coefficient of the resonant frequency T-f decreases from + 70 ppm/degrees C to - 15 ppm/degrees C with the Pb content x increase up to 0.5. The samples with high Pb content exhibit a dielectric constant up to 86.6, but the product Q x f is several times lower than for such microwave ceramics as zirconium tin titanate [1-2]. When a product Q x f higher than 6000 is required in order to use the BNT materials at high frequencies, then the Pb content can result from the tradeoff between small temperature coefficient T-f and high quality factor Q. The features of the BNT dielectric resonators lead to the development of miniaturized dielectric resonator antenna (DRA) with improved characteristics. The DRAs of BNT ceramics presented in this paper exhibit an increased bandwidth due to an optimal height over diameter ratio. For an increased gain and shaping of the overall radiation pattern, an array of dielectric resonator antennas is proposed.

The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is investigated. The Thermal Dielectric Relaxation Current (TDRC) technique and Capacitance-Voltage (C-V) measurements performed at different temperatures and probe frequencies on an N implanted sample and on a virgin sample were employed for this purpose. There are three types of defects located at or near the interface, D-it, NIToxfast and NIToxslow that can be distinguished. Only D-it and NIToxfast respond to the a.c. small, high frequency signal at temperatures above 150K. The separation of D-it from the NIToxfast states have enabled us to study the influence of the excess of interfacial Nitrogen on each of the mentioned defects. It has been found that the N-implantation process fully suppresses the formation of NIToxfast and partially NIToxslow and D-it. Theoretical C-V characteristics were computed, based on the defect distributions determined by TDRC, and compared with the experimental ones showing a close agreement.

Barium neodymium titanate (BNT) material was prepared and characterized. The very high dielectric constant, high Qxf product and controllable temperature coefficient recommend the BNT material for microwave applications. Slot coupled antennas with BNT resonators are investigated. The resonator shape effect on the antenna bandwidth is discussed.