National Institute Of Materials Physics - Romania

A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix. Early studies on TiO2-Ge nanocomposites have shown promises for their use as an alternative in photovoltaic applications. In this study we report the TiO2-Ge films synthesis by reactive magnetron co-sputtering. Their properties were evaluated by compositional (EDS), structural (XRD, FTIR) and optical (UV-Vis) characterizations.

We report on the versatility of pulsed laser deposition and radio frequency magnetron sputtering deposition methods to synthesize highly adherent bioactive hydroxyapatite thin layers on cranio-spinal implants as appropriate biofixation alternatives.

In this study, Fourier Transform Infrared Spectroscopy (FTIR) in Attenuated Total Reflectance mode was employed as main characterization technique to investigate the reaction mechanisms in vitro (SBF) of bioglass and glass-ceramic sputtered coatings. Two bioglass compositional systems are compared in order to gain more information regarding their in vitro bioreactivity. Important correlations between the concentration of non-bridging silicon-oxygen (Si-O-NBO) groups and the content of network modifiers were found. FTIR revealed that the high concentrations of Si-O-NBO groups are promoting the enhancing of coatings' reactivity. This information could be very useful for the development and tailoring of new bioactive glasses with an optimum biological behaviour. By varying the compositional features and the structural state, the sputtered glassy coatings exhibited different in vitro behaviour: inertness, resorbability and bioactivity.

The application area of piezoceramic materials and devices based on such materials is continuously extended. The working conditions for such devices and structures may be sometimes very hard such as low and high temperatures, nuclear radiation, high pressure and so on. Such conditions may affect to some extent the transducer performances due to the changes of the basic properties of piezoceramic materials used as sensors. In this regard we have investigated the changes of the main piezoelectric properties of two typically hard and soft piezoceramics within a large temperature range from 2 to 600 K. All parameters measured showed a rather steady increase or decrease with increasing temperature. The results were discussed in terms of intrinsic and domain wall contribution to the dielectric and piezoelectric response of materials.

Calcium phosphate ceramic powders were synthesized via sol-gel method. The powders were sintered at 600 and 1000 degrees C and characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), electron microscopy (SEM and TEM), elemental microanalysis (EDS), infrared spectroscopy (FTIR), and thermal analysis (TGA and DTA). The XRD analysis revealed a well crystallized hydroxyapatite (HAp) structure at all temperatures. At 1000 degrees C a small amount of CaO (about 1.2 %) was detected. The average crystallite size increased from 19 nm at 80 degrees C to about 125 nm at 1000 degrees C. FTIR spectra showed the presence of various PO43- and OH- groups present in the powders. In order to verify the biocompatibility of HAP powders with hFOB 1.19 osteoblasts cells, an 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) test was applied. It was noticed that the ceramics obtained at 1000 degrees C, increased the cell viability with 10%, 40% and 55% after 6, 12 respectively 24 h, whereas that obtained at 600 degrees C was less effective. Our results proved the high biocompatibility of calcium phosphate ceramic powders obtained by sol-gel and sintered at 1000 degrees C.

Highly oriented (001) AlN (wurtzite type) thin films have been successfully deposited on silicon, platinized silicon and glass substrates by reactive radio-frequency magnetron sputtering at low temperature (150 degrees C). X-ray diffraction, spectroscopic ellipsometry and scanning electron microscopy techniques have been employed to asses the structural characteristics of the AlN films. We have investigated both the influence of AlN film's thickness and of the substrate nature on crystallinity. The thicker films present a better c axis alignment, a minimum orientation dispersion of 3.5. being reached for 1 mu m AlN on silicon. The micro-and macrostrain of the AlN lattice relaxes as the film thickness increases. The film deposited onto platinum has the maximum value of tensile strain along c axis. The film on glass exhibited the poorest texturing and the highest defect concentration. From an optical point of view the film deposited on Pt is the denser one and that deposited on glass is the most rarefied. One can conclude that when using a low deposition temperature and a base pressure of similar to 10(-4) Pa the increase of film thickness leads to improved AlN structure on Si or Pt supports.

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.

Hydrogenated amorphous carbon (a-C: H) films were grown by radio-frequency (1.78 MHz) plasma enhanced chemical vapour deposition technique onto medical grade Ti6Al4V substrates. By varying the deposition pressure (13.33 Pa and 53.33 Pa, respectively) and methane dilution (20% and 60%, respectively) several types of carbonic films were obtained, presenting different bonding structures, surface energies and morphological features reflected in their biological behaviour. FTIR, Raman, UV-Vis, XPS and AFM measurements were used for characterizing these structures. The surface energy was determined by contact angle measurements, and their thrombogenicity was tested by the activated partial thromboplastin time (aPTT) method. We have noticed that at the same values of methane in argon dilution but at different pressure values, the film structure was totally changed: soft polymer-like carbon (PLC) type at the higher pressure and hard diamond-like carbon (DLC) type at the lower pressure. Raman spectroscopy and XPS suggested that the highest sp(3) ratio (similar to 52%), was found for DLC films prepared in a 60% methane dilution in argon. It has been found that for both PLC and DLC structures the surface energy has a decreasing tendency with the methane concentration increase in the deposition atmosphere. Excellent aPTT results were obtained for the DLC-60 (18.6.+/- 0.3 min) and PLC-20 (17.4 +/- 0.5 min) structures, superior to those recorded for Ti6Al4V and PMMA commercial materials. These values recommend the prepared carbonic structures for medical applications: harder coatings (DLC) for metal prostheses (heart valves, acetabular cups etc.), while softer and flexible coatings (PLC) for the textile vessels or stents biofunctionalization.

This work focuses on the investigation of radiation-induced defects responsible for the degradation of silicon detector performance. Comparative studies of the defects induced by irradiation with Co-60-gamma rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster-related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance is presented. In particular, it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposure to high levels of Co-60-gamma doses can be completely understood by the microscopically investigated formation of two point defects, a deep acceptor and a shallow donor, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease (increase) the originally observed damage effects as seen by the changes of the depletion voltage and these effects are known as "beneficial" and "reverse" annealing, respectively. A group of three cluster-related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions. (C) 2009 Elsevier B.V. All rights reserved.