National Institute Of Materials Physics - Romania

The Ba(Zn1/3Ta2/3)O-3 (BZT) ceramic samples were prepared by solid-state reaction and sintered in the range 1550-1650 degrees C for 2 h. Several methods-X-ray diffraction (XRD) and scanning electron microscopy (SEM)-were used for structural and morphological characterization. The unit cell distortion and the presence of the secondary phase content were studied by XRD. A long-range order with a 2:1 ratio of Ta and Zn cations on the octahedral positions of the perovskite structure was noticed with the increase of the sintering temperature. SEM investigations revealed polyhedral well-faceted grains and large grain size distribution. The dielectric properties in the microwave range were measured at room temperature and at 1 kHz on a large temperature interval (+/- 150 degrees C). The dielectric parameters were correlated with morphological and structural properties. Ceramic samples were annealed at 1410 degrees C for 30 h to improve the microwave properties. The dielectric constant of BZT samples measured at 6 GHz and at 1 kHz was between 27 and 28 on the whole temperature range, that is, typical values for BZT material. The temperature coefficient of the resonance frequency at 6 GHz exhibits positive values less than 6 ppm/degrees C.

Ba1-xSrxTiO3 solid solutions with x = 0.4, 0.5, 0.6 and 0.75 were prepared by solid state reaction at 1260 degrees C. The complex dielectric constant dispersion was investigated in the frequency range 1Hz divided by 10 MHz for temperatures between -100 degrees C and 100 degrees C. Microwave measurements, performed at room temperature, show amonotonically decrease of the permittivity from about 3000 to 300 with the increase of the strontium content. Moreover, the variation of the dielectric loss from 0.8% to less than 0.2% with the increase with x was observed. The results indicate that the paraelectric Ba1-xSrxTiO3 materials are suitable for microwave applications.

Hydroxyapatite (HAp) films, widely used as a biocompatible material for hard tissues repairing. are studied in this paper for a better control and understanding of the crystallization and densification of sol-gel deposited layers. Calcium nitrate and triethyl phosphite diluted in alcohols were used as calcium and phosphorus precursors. HAp coatings were obtained by spinning method, followed by drying and annealing in the range 130-750 degrees C. Specific temperatures of the chemical reactions of HAp formation have been revealed by thermogravimetric analysis (TG-DTA). Structural. chemical and optical characterizations of the films were performed by Scanning Electron Microscopy (SEM) with Energy Dispersive X-ray Analysis (EDX) facilities, X-ray diffraction (XRD). Fourier Transform Infrared Spectroscopy (FTIR) and Spectral Ellipsometry (SE). The film crystallinity increases with file annealing temperature above 550 degrees C. XRD lines of HAp crystallographic planes become narrow at 750 degrees. and correspond to a single crystallographic phase. The Film morphology depends not only on annealing history but also on the synthesis parameters. Thus. layers with large grains of well sinterized HAp nano-crystals can be obtained. Using EDX measurements, the Ca/P ratio was found close to the stoichiometric value in the well sinterized HAp grain regions and slightly increased 1.82 for boundary regions between grains. The density of pores usually observed in sol-gel derived films was estimated for different samples using modeling of SE data.

PbZr0.2Ti0.8O3-BiFeO3-PbZr0.2Ti0.8O3 (PZT-BFO-PZT) structure was prepared by sol-gel method on Pt/Si wafers. Three metals were tested as top electrod: Au, Cu, and Pt. A double hysteresis loop was observed in all cases, suggesting an antiferroelectric-like behavior. The values for remnant polarization and coercive field are about 3 mu C/cm(2) and 115 kV/cm, respectively. The saturation polarization is about 22 mu C/cm(2). Capacitance and leakage current show significant dependence on the top metal electrode. The results were explained considering the presence of a Schottky-type contact at the PZT-metal interface.

The purpose of this work is to compare the density of shallow interface states (D-it) at the interface of SiO2/SiC MOS capacitors as deducted by the conductance spectroscopy (CS) and thermally dielectric relaxation current (TDRC) techniques. Both capacitors of 4H- and 6H-SiC (n-type) arc investigated, and both ordinary dry oxidation and,in improved industrial procedure have been employed. The two techniques are found to give rather good agreement for interface states located >= 0.3 eV below the conduction band edge (E-c) while for more shallow states vastly different distributions of D-it are obtained. Different reasons for these contradictory results are discussed, such as strong temperature and energy dependence of the capture cross section of the shallow interface States.

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane now used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.

This work is focusing oil the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in MOS capacitors. The N implanted sample (N-interface similar to 1 x 10(19) cm(-3)) is compared with a non-implanted one (N-interface similar to 1 x 10(16) cm(-3)) by means of the electron interface trap density (D-it). The Dit is determined via High-Low frequency C-V method and Thermal Dielectric Relaxation Current (TDRC) technique. It is shown that the TDRC method, mainly used so far for determination of near interface oxide charges, call be exploited to gain information about the D-it too. The determined value of D-it in the N-implanted sample is nearly one order of magnitude lower than that in the sample without N implantation. Good agreement between the TDRC results and those obtained from High-Low frequency C-V measurements is obtained. Furthermore, the TDRC method shows a high accuracy and resolution of D-it,evaluation in the region close to the majority carrier band edge and gives information about the traps located into the oxide.

Soft ferrites in the CuZnTi system, having the chemical composition Cu1-x-yZnxTiyFe2O4 with 0.5 <= x <= 0.7 and 0.00 <= y <= 0.05 were investigated as a function of composition, sintering temperature and cooling speed, in order to obtain materials with different Curie temperatures, between 30 and 180 degrees C and very high change rate of permeability with temperature around their Curie points. Such materials are well suited to use as high sensitive magnetic temperature sensors and transducers for temperature control. Zn and Ti additions to copper ferrite change the Curie temperature in a controllable manner, thus being possible to produce ferrite material with a fine control of the Curie point at any desired temperature. Most important was the behavior of magnetic permeability with temperature around the Curie point, where it may change with about 60 %/degrees C by a proper choice of the cooling speed of samples from the sintering temperature to room temperature. This makes such materials extremely attractive as magnetic temperature sensors of high sensitivity. Two applications Of Such materials as temperature sensors, namely an ultrathermostat and an on-off switch type relay were designed. Their functionality and performances are presented and discussed.

We present the preparation, structural, and magnetic properties of a series of Fe-containing borosilicate glasses as a function of the ratio SiO2/Fe2O3 which is ranging from 1.49 to 2.68. The role of nucleators (Cr2O3 and P2O5) was also investigated. X-Ray diffraction has revealed the formation of magnetite as the major or unique crystalline phase. As SEM micrographs have revealed, the addition of P2O5 give rise to a finer structure as compared with Cr2O3. In addition, the same oxide decreases the temperature of structural transition with almost 100 degrees C. The magnetization data reveal a two step transition at low temperatures: a high temperature transition at T-v = 128 K, which we attribute to the Verwey transition, and a low temperature transition at T-s = 48 K which, most likely, is the result of change in the dynamic of the domain motion.

This work is focusing on the investigation of those radiation induced defects causing degradation effects of Silicon detector performance. Comparative studies of the defects induced by irradiation with Co-60- gamma rays, 23 GeV protons and I MeV equivalent reactor neutrons revealed the existence of some point defects and cluster related centers having a strong impact to damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposing to high levels of Co-60- gamma irradiation can be completely understood by the microscopically investigated formation of two point defects: i) a defect formed via a second order process (I-p) that can be associated with the long searched for V2O complex or with a Carbon related center and is the cause for the observed type inversion effect in Oxygen lean material; ii) a bistable donor (BD) created during irradiation that is strongly generated in Oxygen rich material, associated with one of the earlier thermal donors in Si. It is the cause for the observed positive space charge induced by irradiation in oxygenated Si diodes. Specific for hadron irradiation are the annealing effects which decrease resp. increase the originally observed damage effects as seen by the changes of the depletion voltage (effects known as "beneficial" and "reverse" annealing, respectively). A group of four cluster related defects proved to be responsible for these annealing effects. Their formation is not affected by the Oxygen content or Si growth procedure suggesting that they are complexes of multivacancies located inside extended disordered regions.