National Institute Of Materials Physics - Romania

Publications

860 articles found

721. Stable radiation-induced donor generation and its influence on the radiation tolerance of silicon diodes

Authors: Pintilie, I; Buda, M; Fretwurst, E; Lindstrom, G; Stahl, J

Published: JAN 1 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 556, 208, DOI: 10.1016/j.nima.2005.10.013

Four different kinds of silicon materials (standard float zone-FZ, oxygen enriched FZ-DOFZ, Czoehralski-Cz and thin epitaxial layers grown on Cz substrates-Epi/Cz) have been investigated in this work. They have been irradiated with (CO)-C-60-gamma- radiation and 24 GeV/c protons. The differences in the changes observed in the effective doping concentration (N-eff) after proton irradiation of Cz and Epi silicon can be explained by the balance between the formation of two types of defects-a deep acceptor (the I center, referred to as It, in this paper in order to avoid any confusion with interstitials) and a shallow donor (the bistable donor (BD) complex). While the formation of the I-P center depends on the concentration of interstitial oxygen, the BD is generated in materials with high concentration of oxygen dimers. Following the generation of the IO2i defect-detected after low irradiation fluences only in Epi and Cz material-the average dimer concentration in 50 put Epi/Cz was estimated to be of only 2.7 times lower than in Cz diodes. A value of similar to 2.7 x 10(-12) cm(2) for the electron capture cross-section of the Thermal Double Donors (TDDs), present in the Cz material, was also measured for the first time. The positive space charge introduced by ionization of the BD centers in Epi diodes was directly determined from TSC experiments for two irradiation fluences. The determined values show a linear fluence dependence for the formation of BD centers. By taking into account the BD and the I-p center generation as well as the donor removal, the change of the effective doping concentration N-eff at 20 degrees C in Epi/Cz and Cz diodes after an annealing time of 120 min at 60 degrees C can be explained up to a negative space charge introduction rate of similar to 2.2 x 10(-2) cm(-1) thought to be determined by negatively charged clusters. Long-time annealing experiments at 80 degrees C have shown that the generation of BDs represents a stable damage. (c) 2005 Elsevier B.V. All rights reserved.

722. Structural, electrical and dielectric properties of uranium doped barium titanate

Authors: Miclea, C; Tanasoiu, C; Miclea, CF; Gheorghiu, A

Published: 2006, ADVANCED MATERIALS FORUM III, PTS 1 AND 2, 514-516, 1273, DOI: 10.4028/www.scientific.net/MSF.514-516.1269

The influence of uranium doping up to 2 at. % on grain size, electrical resistivity and dielectric constant of barium titanate ceramics has been investigated. The samples were prepared by the conventional ceramic technique using pure raw materials. The mixed oxides were calcined at 1100 degrees C. The pressed pellets were sintered at temperatures between 1300 divided by 1500 degrees C in controlled atmosphere of argon and oxygen. The electrical resistivity drastically decreased, from 10(9) to 10(3) Omega(.)cm, with increasing uranium content up to 1.5 at. % and increased thereafter to about 10(7)Omega center dot cm, for 2 at. % U. The dielectric constant slightly increased with increasing U-content, up to about I at. % U and then shows a sudden increase with about two orders of magnitude, having a sharp maximum at 1.5 at. % U, when sintered in argon atmosphere compared to only half an order of magnitude when sintered in oxygen atmosphere. The results are discussed in terms of the possible A and B sites occupied by uranium as well as the boundary layer enriched with vacancies.

723. Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O-3 thin films - art. no. 123104

Authors: Pintilie, L; Boerasu, I; Gomes, MJM; Zhao, T; Ramesh, R; Alexe, M

Published: DEC 15 2005, JOURNAL OF APPLIED PHYSICS, 98, DOI: 10.1063/1.2148623

A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal-Pb(Zr,Ti)O-3-metal samples with different Zr/Ti ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around 10(18) cm(-3) were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the 10(20)-10(21) cm(-3) range. The total thickness of the interface layer ranges from 3 to 35 nm, depending on the Zr/Ti ratio, on the shape of the hysteresis loop, and on the electrode material. The simulated I-V characteristics is fitted to the experimental one using the potential barrier and Richardson's constant as parameters. The potential barrier is determined to be in the 1.09-1.37 eV range and Richardson's constant is 520 A cm(-2) K-2. (c) 2005 American Institute of Physics.

724. Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties

Authors: Pintilie, L; Alexe, M

Published: DEC 15 2005, JOURNAL OF APPLIED PHYSICS, 98, DOI: 10.1063/1.2148622

A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail. (c) 2005 American Institute of Physics.

725. Microwave dielectric properties of doped Ba0.5Sr0.5TiO3 ceramics correlated with sintering temperature

Authors: Ioachim, A; Banciu, MG; Nedelcu, L

Published: DEC 2005, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7, 3027, DOI:

Ba0.5Sr0.5TiO3 ferroelectric ceramics (BST) were prepared by solid-state reaction. The effect of sintering temperature T, on microwave dielectric properties was studied. Also, the influence of 1 wt % MgO and 1 wt % MnO2 doping on the dielectric parameters was investigated. The morphological aspects of samples were studied by scanning electron microscopy (SEM). The microwave measurements at room temperature revealed dielectric constant around 1.000 and loss smaller than 1 % at 1.1 GHz. Also, the dielectric parameters at low frequency were determined. The results indicate that the BST dielectric ceramics are suitable for manufacturing electric field controlled components such as tunable resonators, phase shifters, steerable antennas etc.

726. Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons

Authors: Makarenko, LF; Korshunov, FP; Lastovski, SB; Kazuchits, NM; Rusetsky, MS; Fretwurst, E; Lindstrom, G; Moll, M; Pintilie, I; Zamiatin, NI

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 81, DOI: 10.1016/j.nima.2005.06.010

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard float zone silicon. The detectors were irradiated with 3.5MeV electrons and annealed at temperatures of 50-350 degrees C. It has been found that preliminary hydrogenation at 300 degrees C leads to disappearance of divacancies and vacancy-oxygen complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. (c) 2005 Elsevier B.V. All rights reserved.

727. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Authors: Fretwurst, E; Adey, J; Al-Ajili, A; Alfieri, G; Allport, PP; Artuso, M; Assouak, S; Avset, BS; Barabashi, L; Barcz, A; Bates, R; Biagi, SF; Bilei, GM; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bolla, G; Bondarenko, G; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, TJV; Brodbeck, TJ; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, GF; Dawson, I; de Boer, W; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Garcia, C; Garcia-Navarro, JE; Gaubas, E; Genest, MH; Gill, KA; Giolo, K; Glaser, M; Goessling, C; Golovine, V; Sevilla, SG; Gorelov, I; Goss, J; Bates, AG; Gregoire, G; Gregori, P; Grigoriev, E; Grillo, AA; Groza, A; Guskov, J; Haddad, L; Harkonen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, I; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, KMH; Jones, BK; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J; Klaiber-Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K; Lastovetsky, V; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindstrom, G; Linhart, V; Litovchenko, P; Litovchenko, A; Giudice, AL; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, LF; Mandic, I; Manfredotti, C; Manna, N; Garcia, SM; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzewska-Orlowska, E; Nysten, J; Olivero, P; Oshea, V; Palviainen, T; Paolini, C; Parkes, C; Pesseri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Plemonte, C; Pignatel, GU; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospisil, S; Pozza, A; Radicci, V; Rafi, JM; Rando, R; Roeder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, HFW; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P; Sentenac, D; Shipsey, I; Sicho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, BG; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullan, M; Vaitkus, JV; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 19, DOI: 10.1016/j.nima.2005.05.039

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10(16) hadrons/cm(2). Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed. (c) 2005 Elsevier B.V. All rights reserved.

728. Radiation-induced donor generation in epitaxial and Cz diodes

Authors: Pintilie, I; Buda, M; Fretwurst, E; Honniger, F; Lindstrom, G; Stahl, J

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 60, DOI: 10.1016/j.nima.2005.06.006

Thin epitaxial layers grown on Cz substrates (Epi) and high resistivity Cz diodes have been irradiated with fluences of 2 x 10(14) cm(-2) 24 GeV protons. It is shown that the differences in the changes observed in the effective doping concentration (N-eff) after irradiation of Epi silicon can be explained by the balance between the formation of two type of defects-a deep acceptor (the I center) and a shallow donor (the BD complex). The BD concentration in Epi material is evaluated to be similar to 1.3 x 10(12) cm(-3). (c) 2005 Elsevier B.V. All rights reserved.

729. Characterization of oxygen dimer-enriched silicon detectors

Authors: Boisvert, V; Lindstrom, JL; Moll, M; Murin, LI; Pintilie, I

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 55, DOI: 10.1016/j.nima.2005.06.005

Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence. (c) 2005 Elsevier B.V. All rights reserved.

730. Effect of neutron irradiation on some piezoelectric properties of PZT type ceramics

Authors: Miclea, C; Tanasoiu, C; Miclea, CF; Spanulescu, I; Cioangher, M

Published: SEP 2005, JOURNAL DE PHYSIQUE IV, 128, 120, DOI: 10.1051/jp4:2005128018

Soft and hard type piezoceramic sintered samples were subjected to neutron irradiation in fluxes up to, 10(18) n/cm(2) and the changes of the basic properties brought about by irradiation were investigated. The results showed that intermediate irradiation levels of up to 10(15) n/cm(2) do not change significantly the properties, but higher levels changed them. Thus the electromechanical coupling factor, the dielectric permittivity and losses decreased while the mechanical quality factor increases with increasing neutron flux for both types of materials. Changes of the lattice constants a and c were also observed. The main defects produced by neutron irradiation are oxygen vacancies but they are not entirely responsible for the modification of the materials properties. Some other factors such as domain pinning and lattice deformation can contribute to the properties degradation.